MCH3374 Power MOSFET –12V, 70mΩ, –3A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology,which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • High Speed Switching • 1.8V drive • Pb-Free and RoHS compliance • Halogen Free compliance : MCH3374-TL-W www.onsemi.com VDSS RDS(on) Max 70mΩ@ −4.5V ID Max −12V 115mΩ@ −2.5V −3A 215mΩ@ −1.8V ELECTRICAL CONNECTION P-Channel Typical Applications • Load Switch 3 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit −12 V VGSS ±8 V Drain Current (DC) ID −3 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −12 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 1.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model 1 1 : Gate 2 : Source 3 : Drain 2 PACKING TYPE : TL MARKING QF LOT No. VDSS Gate to Source Voltage LOT No. Drain to Source Voltage TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) Symbol RθJA © Semiconductor Components Industries, LLC, 2015 July 2015 - Rev. 2 Value Unit 125 1 °C/W Publication Order Number : MCH3374/D MCH3374 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=−1mA, VGS=0V VDS=−12V, VGS=0V VGS=±6.4V, VDS=0V −12 VDS=−6V, ID=−1mA −0.4 VDS=−6V, ID=−1.5A 2.7 typ max Unit V −10 μA ±10 μA −1.4 V 4.5 S RDS(on)1 RDS(on)2 ID=−1.5A, VGS=−4.5V 54 70 mΩ ID=−0.8A, VGS=−2.5V 80 115 mΩ RDS(on)3 Ciss ID=−0.3A, VGS=−1.8V 125 215 mΩ Output Capacitance Coss VDS=−6V, f=1MHz 145 pF Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time td(on) 8.8 ns Rise Time tr 80 ns Turn-OFF Delay Time td(off) 41 ns Fall Time tf 50 ns 5.6 nC Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 405 See specified Test Circuit VDS=−6V, VGS=−4.5V, ID=−3A pF 0.7 nC 1.6 nC VSD Forward Diode Voltage IS=−3A, VGS=0V −0.85 −1.2 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --1.5A RL=4Ω VIN D VOUT PW=10μs D.C.≤1% G MCH3374 P.G 50Ω S www.onsemi.com 2 MCH3374 www.onsemi.com 3 MCH3374 www.onsemi.com 4 MCH3374 PACKAGE DIMENSIONS unit : mm SC-70FL / MCPH3 CASE 419AQ ISSUE O Recommended Soldering Footprint 0.6 0.4 1 : Gate 2 : Source 2.1 3 : Drain 0.65 0.65 ORDERING INFORMATION Device Marking MCH3374-TL-E QF MCH3374-TL-W Package SC-70FL / MCPH3 (Pb-Free) SC-70FL / MCPH3 (Pb-Free / Halogen Free) Shipping (Qty / Packing) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH3374 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. 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