MCH6344 Power MOSFET –30V, 150mΩ, –2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 150mΩ@ −10V ID Max −30V 255mΩ@ −4.5V −2A 292mΩ@ −4V Typical Applications • Load Switch ELECTRICAL CONNECTION P-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Drain to Source Voltage VDSS −30 Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID −2 A V 3 Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −8 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C PACKING TYPE : TL MARKING LOT No. YT TL ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter Symbol RθJA © Semiconductor Components Industries, LLC, 2015 June 2015 - Rev. 3 4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain LOT No. Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) 1, 2, 5, 6 Unit Value 156.2 1 Unit See detailed ordering and shipping information on page 5 of this data sheet. °C/W Publication Order Number : MCH6344/D MCH6344 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=−1mA, VGS=0V VDS=−30V, VGS=0V VGS=±16V, VDS=0V −30 VDS=−10V, ID=−1mA −1.2 typ max Unit V −1 μA ±10 μA −2.6 V VDS=−10V, ID=−1A 1.9 RDS(on)1 RDS(on)2 ID=−1A, VGS=−10V 115 150 mΩ ID=−0.5A, VGS=−4.5V 182 255 mΩ RDS(on)3 Ciss ID=−0.5A, VGS=−4V 208 292 mΩ Output Capacitance Coss VDS=−10V, f=1MHz 51 pF Reverse Transfer Capacitance Crss 36 pF Turn-ON Delay Time td(on) 4.5 ns Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 172 See specified Test Circuit VDS=−15V, VGS=−10V, ID=−2A S pF 4.2 ns 20 ns 10.6 ns 3.9 nC 0.6 nC 0.8 nC VSD Forward Diode Voltage IS=−2A, VGS=0V −0.86 −1.5 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --1A RL=15Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω MCH6344 S www.onsemi.com 2 MCH6344 www.onsemi.com 3 MCH6344 www.onsemi.com 4 MCH6344 PACKAGE DIMENSIONS unit : mm SC-88FL / MCPH6 CASE 419AS ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) YT SC-88FL / MCPH6 (Pb-Free / Halogen Free) 3,000 / Tape & Reel MCH6344-TL-H MCH6344-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6344 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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