60V, -370mA, 4.2Ohm, Single CPH3

Ordering number : ENA1039A
6HP04CH
P-Channel Small Single MOSFET
–60V, –370mA, 4.2Ω, Single CPH3
http://onsemi.com
Features
•
•
•
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
Conditions
Ratings
VDSS
VGSS
ID
IDP
Channel Temperature
PD
Tch
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
Unit
--60
V
±20
V
--370
mA
--1480
mA
0.6
W
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Symbol
Conditions
Ratings
min
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
--60
VGS(off)
| yfs |
VDS=--10V, ID=--100μA
VDS=--10V, ID=--190mA
--1.2
Static Drain to Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--190mA, VGS=--10V
ID=--100mA, VGS=--4V
Input Capacitance
Ciss
Output Capacitance
Coss
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
VDS=--20V, f=1MHz
typ
max
Unit
V
--1
μA
±10
μA
--2.6
310
V
mS
3.1
4.2
Ω
5.1
7.3
Ω
24.1
pF
8.5
pF
Reverse Transfer Capacitance
Crss
4.1
pF
Turn-ON Delay Time
td(on)
tr
18.4
ns
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--370mA
15.2
ns
113
ns
41
ns
0.84
nC
0.19
nC
0.21
IS=--370mA, VGS=0V
--0.92
nC
--1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2014
May, 2014
50714 TKIM TC-00003062/20608PE TIIM TC-00001164 No.A1039-1/5
6HP04CH
.0
V
V
--4.5
--4.0V
--200
--100
Drain Current, ID -- mA
--350
VGS= --3V
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
Drain to Source Voltage, VDS -- V
--150
--100
--1.6
0
--190mA
10
8
6
4
ID= --100mA
2
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
Gate to Source Voltage, VGS -- V
2
10
7
5
3
4
2
--20
0
20
40
60
80
100
120
140
160
IT17339
IS -- VSD
VGS=0V
--100
7
5
3
2
--10
7
5
3
2
1
--1
2
--1
3
5
7 --10
2
3
5 7 --100
2
3
5 7--1000
IT17340
Drain Current, ID -- mA
0
tr
3
2
--0.8
--1.0
--1.2
IT17341
f=1MHz
5
Ciss, Coss, Crss -- pF
td(on)
--0.6
7
3
tf
--0.4
Ciss, Coss, Crss -- VDS
100
VDD= --30V
VGS= --10V
td(off)
--0.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
7
5
1
--0.1
--40
2
2
10
7
5
90mA
--1
, I D=
--10V
=
VGS
Ta=7
5°C
25°C
--25°C
C
25°
3
2
= -VGS
6
--1000
7
5
Source Current, IS -- mA
5°C
--2
Ta=
C
75°
100
7
5
3
--1
I =
4V, D
3
2
100
7
5
A
00m
8
Ambient Temperature, Ta -- °C
3
2
--5
IT17337
10
IT17338
VDS= --10V
--4
12
0
--60
--20
| yfs | -- ID
1000
7
5
--3
RDS(on) -- Ta
14
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
12
--2
Gate to Source Voltage, VGS -- V
Ta=25°C
0
--1
IT17336
RDS(on) -- VGS
14
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
--200
0
0
Forward Transfer Admittance, |yfs | -- mS
--250
--50
0
Switching Time, SW Time -- ns
--300
25°C
--6
--1
2
Drain Current, ID -- mA
--300
VDS= --10V
Ta=7
5°C
0.
--1
ID -- VGS
--400
.0V
0V
--25
°C
ID -- VDS
--400
3
Ciss
2
Coss
10
7
Crss
5
3
2
2
3
5
7
--1
2
Drain Current, ID -- A
3
5
7
--10
IT17342
1
0
--5
--10
--15
--20
--25
Drain to Source Voltage, VDS -- V
--30
IT17343
No.A1039-2/5
6HP04CH
VGS -- Qg
--10
--10
7
5
3
2
VDS= --30V
--8
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
--9
--7
--6
--5
--4
--3
IDP= --1480mA (PW≤10μs)
ID= --370mA
--0.1
7
5
3
2
--0.01
7
5
3
2
--2
--1
0
0
0.8
0.6
0.4
0.2
Total Gate Charge, Qg -- nC
1.0
IT17344
PD -- Ta
0.8
Allowable Power Dissipation, PD -- W
--1.0
7
5
3
2
SOA
--0.001
--0.01 2 3
100
μ
1m s
10 s
m
s
10
0
m
DC
s
op
era
tio
n
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2✕0.8mm)
5 7--0.1 2 3
5 7 --1
2 3
5 7 --10
Drain to Source Voltage, VDS -- V
2 3
5 7--100
IT17345
When mounted on ceramic substrate
(900mm2✕0.8mm)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT17346
No.A1039-3/5
6HP04CH
Package Dimensions
6HP04CH-TL-W
CPH3
CASE 318BA
ISSUE O
Unit : mm
1: Gate
2: Source
3: Drain
Land Pattern Example
2.4
1.4
0.6
Packing Type:TL
Device
Package
Shipping
memo
6HP04CH-TL-W
CPH3, SC-59
SOT-23, TO-236
3,000
pcs. / reel
Pb-Free
and
Halogen Free
Electrical Connection
Marking
WW
Ordering & Package Information
0.95
LOT No.
0.95
TL
Switching Time Test Circuit
VDD= --30V
VIN
3
0V
--10V
ID= --190mA
RL=154Ω
VIN
D
1
VOUT
PW≤10μs
D.C. ≤1%
G
Rg
2
P.G
6HP04CH
50Ω
S
Rg=5kΩ
No.A1039-4/5
6HP04CH
Note on usage : Since the 6HP04CH is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.A1039-5/5