30V, 325mΩ, -1.5A, Complementary Dual

MCH6663
Power MOSFET
30V, 188mΩ, 1.8A, −30V, 325mΩ, −1.5A,
Complementary Dual
Features
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VDSS
• ON-Resistance
Nch : RDS(on)1=145mΩ (typ)
Pch : RDS(on)1=250mΩ (typ)
N-Ch
30V
• 4V Drive
• Complementary N-Channel and P-Channel MOSFET
• Pb-Free, Halogen Free and RoHS Compliance
RDS(on) Max
188 mΩ@ 10V
ID Max
343 mΩ@ 4.5V
1.8A
378 mΩ@ 4V
325 mΩ@ −10V
P-Ch
−30V
555 mΩ@ −4.5V
−1.5A
641 mΩ@ −4V
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
N-channel
P-channel
Unit
Drain to Source Voltage
VDSS
30
−30
V
Gate to Source Voltage
VGSS
±20
±20
V
Drain Current (DC)
ID
1.8
−1.5
A
IDP
7.2
−6
A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
Electrical Connection
N-Channel and P-Channel
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Power Dissipation
When mounted on ceramic substrate
PD
0.8
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
(900mm2×0.8mm) 1unit
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
1
2
3
Packing Type : TL
Marking
Thermal Resistance Ratings
Parameter
Symbol
Value
Unit
Junction to Ambient
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
RθJA
156.25
°C/W
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 3
1
Publication Order Number :
MCH6663/D
MCH6663
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
[N-channel]
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±16V, VDS=0V
30
V
1.2
1
μA
±10
μA
2.6
V
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
Forward Transconductance
gFS
VDS=10V, ID=0.9A
1.1
RDS(on)1
ID=0.9A, VGS=10V
145
188
mΩ
Static Drain to Source On-State Resistance
RDS(on)2
ID=0.5A, VGS=4.5V
245
343
mΩ
RDS(on)3
ID=0.5A, VGS=4V
270
378
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
S
88
pF
19
pF
Crss
11
pF
td(on)
3.4
ns
Rise Time
tr
3.6
ns
Turn-OFF Delay Time
td(off)
10.5
ns
Fall Time
tf
4.0
ns
Total Gate Charge
Qg
2.0
nC
Gate to Source Charge
Qgs
0.33
nC
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
IS=1.8A, VGS=0V
Drain to Source Breakdown Voltage
V(BR)DSS
ID=−1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
VDS=10V, f=1MHz
See specified Test Circuit
VDS=15V, VGS=10V, ID=1.8A
0.29
0.86
nC
1.2
V
VDS=−30V, VGS=0V
−1
μA
VGS=±16V, VDS=0V
±10
μA
−2.6
V
[P-channel]
−30
V
−1.2
Gate Threshold Voltage
VGS(th)
VDS=−10V, ID=−1mA
Forward Transconductance
gFS
VDS=−10V, ID=−0.8A
1.3
RDS(on)1
ID=−0.8A, VGS=−10V
250
325
mΩ
RDS(on)2
ID=−0.4A, VGS=−4.5V
397
555
mΩ
RDS(on)3
ID=−0.4A, VGS=−4V
458
641
mΩ
Static Drain to Source On-State Resistance
S
Input Capacitance
Ciss
Output Capacitance
Coss
22
pF
Reverse Transfer Capacitance
Crss
16
pF
Turn-ON Delay Time
td(on)
4.0
ns
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
82
VDS=−10V, f=1MHz
See specified Test Circuit
VDS=−15V, VGS=−10V, ID=−1.5A
pF
3.3
ns
12
ns
5.4
ns
2.2
nC
0.36
nC
0.49
IS=−1.5A, VGS=0V
−0.9
nC
−1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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MCH6663
Switching Time Test Circuit
[N-channel]
10V
0V
[P-channel]
VDD=15V
VIN
0V
--10V
ID=0.9A
RL=16.7Ω
VIN
D
PW=10μs
D.C.≤1%
50Ω
ID= --0.8A
RL=18.75Ω
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
P.G
VDD= --15V
VIN
VOUT
G
MCH6663
P.G
S
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3
50Ω
MCH6663
S
MCH6663
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4
MCH6663
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5
MCH6663
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6
MCH6663
Package Dimensions
MCH6663-TL-H / MCH6663-TL-W
MCPH6
CASE 419AS
ISSUE O
unit : mm
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate 2
6 : Drain1
Recommended
Soldering Footprint
2.1
0.6
0.4
0.65 0.65
ORDERING INFORMATION
Device
MCH6663-TL-H
MCH6663-TL-W
Package
Shipping
Note
MCPH6
SC-88,SC-70-6,SOT-363
3,000 pcs. / Tape & Reel
Pb-Free
and Halogen Free
Note on usage : Since the MCH6663 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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