MCH6663 Power MOSFET 30V, 188mΩ, 1.8A, −30V, 325mΩ, −1.5A, Complementary Dual Features www.onsemi.com VDSS • ON-Resistance Nch : RDS(on)1=145mΩ (typ) Pch : RDS(on)1=250mΩ (typ) N-Ch 30V • 4V Drive • Complementary N-Channel and P-Channel MOSFET • Pb-Free, Halogen Free and RoHS Compliance RDS(on) Max 188 mΩ@ 10V ID Max 343 mΩ@ 4.5V 1.8A 378 mΩ@ 4V 325 mΩ@ −10V P-Ch −30V 555 mΩ@ −4.5V −1.5A 641 mΩ@ −4V Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol N-channel P-channel Unit Drain to Source Voltage VDSS 30 −30 V Gate to Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 1.8 −1.5 A IDP 7.2 −6 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% Electrical Connection N-Channel and P-Channel 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Power Dissipation When mounted on ceramic substrate PD 0.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C (900mm2×0.8mm) 1unit This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model 1 2 3 Packing Type : TL Marking Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient When mounted on ceramic substrate (900mm2×0.8mm) 1unit RθJA 156.25 °C/W TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : MCH6663/D MCH6663 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ Unit max [N-channel] Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V 30 V 1.2 1 μA ±10 μA 2.6 V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=0.9A 1.1 RDS(on)1 ID=0.9A, VGS=10V 145 188 mΩ Static Drain to Source On-State Resistance RDS(on)2 ID=0.5A, VGS=4.5V 245 343 mΩ RDS(on)3 ID=0.5A, VGS=4V 270 378 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time S 88 pF 19 pF Crss 11 pF td(on) 3.4 ns Rise Time tr 3.6 ns Turn-OFF Delay Time td(off) 10.5 ns Fall Time tf 4.0 ns Total Gate Charge Qg 2.0 nC Gate to Source Charge Qgs 0.33 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD IS=1.8A, VGS=0V Drain to Source Breakdown Voltage V(BR)DSS ID=−1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VDS=10V, f=1MHz See specified Test Circuit VDS=15V, VGS=10V, ID=1.8A 0.29 0.86 nC 1.2 V VDS=−30V, VGS=0V −1 μA VGS=±16V, VDS=0V ±10 μA −2.6 V [P-channel] −30 V −1.2 Gate Threshold Voltage VGS(th) VDS=−10V, ID=−1mA Forward Transconductance gFS VDS=−10V, ID=−0.8A 1.3 RDS(on)1 ID=−0.8A, VGS=−10V 250 325 mΩ RDS(on)2 ID=−0.4A, VGS=−4.5V 397 555 mΩ RDS(on)3 ID=−0.4A, VGS=−4V 458 641 mΩ Static Drain to Source On-State Resistance S Input Capacitance Ciss Output Capacitance Coss 22 pF Reverse Transfer Capacitance Crss 16 pF Turn-ON Delay Time td(on) 4.0 ns Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD 82 VDS=−10V, f=1MHz See specified Test Circuit VDS=−15V, VGS=−10V, ID=−1.5A pF 3.3 ns 12 ns 5.4 ns 2.2 nC 0.36 nC 0.49 IS=−1.5A, VGS=0V −0.9 nC −1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 MCH6663 Switching Time Test Circuit [N-channel] 10V 0V [P-channel] VDD=15V VIN 0V --10V ID=0.9A RL=16.7Ω VIN D PW=10μs D.C.≤1% 50Ω ID= --0.8A RL=18.75Ω VIN VOUT D PW=10μs D.C.≤1% G P.G VDD= --15V VIN VOUT G MCH6663 P.G S www.onsemi.com 3 50Ω MCH6663 S MCH6663 www.onsemi.com 4 MCH6663 www.onsemi.com 5 MCH6663 www.onsemi.com 6 MCH6663 Package Dimensions MCH6663-TL-H / MCH6663-TL-W MCPH6 CASE 419AS ISSUE O unit : mm 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate 2 6 : Drain1 Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device MCH6663-TL-H MCH6663-TL-W Package Shipping Note MCPH6 SC-88,SC-70-6,SOT-363 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free Note on usage : Since the MCH6663 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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