EMH2801 - ON Semiconductor

Ordering number : ENA1821A
EMH2801
P-Channel Power MOSFET
http://onsemi.com
–20V, –3A, 85mΩ, Single EMH8 with Schottky Diode
Features
•
•
•
•
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting
• 1.8V drive
[MOSFET] • Low ON-resistance
•
• Low forward voltage (IF=2.0A, VF max=0.46V)
[SBD]
Small switching noise
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
--20
V
±10
V
Allowable Power Dissipation
ID
IDP
PD
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
--3
A
--20
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Continued on next page.
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
Product & Package Information
unit : mm (typ)
7045-007
• Package
: EMH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
0.125
0.2
0.2
EMH2801-TL-H
5
Packing Type : TL
Marking
QA
2.1
1.7
8
Lot No.
TL
1
0.2
4
0.5
0.05
0.75
2.0
Electrical Connection
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
EMH8
Semiconductor Components Industries, LLC, 2013
July, 2013
8
7
6
5
1
2
3
4
62712 TKIM/81110PE TKIM TC-00002458 No. A1821-1/8
EMH2801
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
VRRM
VRSM
15
V
15
V
Rectangular wave
2.0
A
50Hz sine wave, 1 cycle
20
A
Surge Forward Current
IO
IFSM
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--1.5A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
--20
V
--0.4
--1
μA
±10
μA
--1.3
3.6
V
S
65
85
mΩ
98
137
mΩ
155
235
mΩ
320
pF
66
pF
Crss
50
pF
Turn-ON Delay Time
td(on)
7.1
ns
Rise Time
tr
td(off)
21
ns
37
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
VDS=--10V, f=1MHz
See specified Test Circuit.
tf
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=--3A, VGS=0V
VR
VF1
IR=1mA
VF2
VDS=--10V, VGS=--4.5V, ID=--3A
32
ns
4.0
nC
0.6
nC
1.1
nC
--0.83
--1.2
V
IF=1.0A
0.33
0.39
V
IF=2.0A
VR=7.5V
0.39
0.46
V
300
μA
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
IR
C
VR=10V, f=1MHz
15
V
35
pF
No. A1821-2/8
EMH2801
Switching Time Test Circuit
(MOSFET)
VDD= --10V
D
PW=10μs
D.C.≤1%
50Ω
VOUT
100Ω
10Ω
10mA
ID= --1.5A
RL=6.67Ω
VIN
100mA
Duty≤10%
100mA
VIN
0V
--4.5V
trr Test Circuit
(SBD)
10μs
--5V
G
trr
EMH2801
P.G
50Ω
S
Ordering Information
Device
Package
Shipping
memo
EMH8
3,000pcs./reel
Pb Free and Halogen Free
EMH2801-TL-H
ID -- VDS
--5.0
.8V
--3.5
V
--2.5
V
--4.5
--1
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
210
180
ID= --0.5A
--1A
120
--3A
90
60
30
0
0
--1
--2
--3
--4
--5
--6
Gate-to-Source Voltage, VGS -- V
--7
--8
IT14535
C
C
--25
°
°C
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2
240
Ta=25°C
150
--1.5
0
--1.0
Drain-to-Source Voltage, VDS -- V
IT14533
RDS(on) -- VGS
[MOSFET]
240
--2.0
--0.5
VGS= --1.2V
--0.2
--2.5
--1.0
--0.5
--0.1
--3.0
75°
--1.5V
--3.5
Ta=
Drain Current, ID -- A
--4.
5
--1.0
0
[MOSFET]
--4.0
--1.5
0
ID -- VGS
VDS= --10V
25
--8V
--2.0
[MOSFET]
V
--2.5
--10V
Drain Current, ID -- A
--3.0
IT14534
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
[MOSFET]
220
200
.5A
180
160
=
VGS
140
= --0
V, I D
--1.8
.0A
120
=
VGS
100
--1
, I D=
--2.5V
3.0A
-V, I D=
80
--4.5
V GS=
60
40
20
0
--60 --40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT14536
No. A1821-3/8
EMH2801
| yfs | -- ID
[MOSFET]
7
75
1.0
°C
°C
25
7
5
3
--1.0
7
5
3
2
--0.1
7
5
25°
C
--2
5°C
=
Ta
5°C
--2
Ta=
75°
C
2
--0.5
--0.6
3
2
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5
--0.01
--0.3
7
--0.4
[MOSFET]
VDD= --10V
VGS= --4.5V
3
7
Ciss, Coss, Crss -- pF
td(off)
5
3
tf
2
tr
10
td(on)
7
--0.9
--1.0
--1.1
f=1MHz
Ciss
3
7
--0.8
5
2
100
--0.7
Diode Forward Voltage, VSD -- V
IT14538
Ciss, Coss, Crss -- VDS [MOSFET]
IT14537
SW Time -- ID
5
Switching Time, SW Time -- ns
VGS=0V
2
3
Drain Current, ID -- A
2
100
Coss
Crss
7
5
5
3
3
2
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
Drain Current, ID -- A
3
2
5 7 --10
[MOSFET]
3
2
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
--10
7
5
3
2
--0.5
3
2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Total Gate Charge, Qg -- nC
PD -- Ta
1.2
4.0
4.5
IT14541
--6
--8
--10
--12
--14
--16
--18
--20
Drain-to-Source Voltage, VDS -- V
IT14540
[MOSFET]
ASO
IDP= --20A (PW≤10μs)
ID= --3A
10
0μ
1m s
s
10
DC
ms
op
10
0m
s
era
tio
n(
Ta
=
3
2
--0.1
7
5
0
--4
--1.0
7
5
--1.0
0
--2
5
VDS= --10V
ID= --3A
--4.0
0
IT14539
VGS -- Qg
--4.5
Gate-to-Source Voltage, VGS -- V
[MOSFET]
3
5
0.1
--0.01
Allowable Power Dissipation, PD -- W
IS -- VSD
7
5
VDS= --10V
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
10
25
°C
)
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
--0.01
--0.01
2 3
5 7 --0.1
2 3
5 7 --1.0
2
3
5 7 --10
2 3
IT15908
Drain-to-Source Voltage, VDS -- V
[MOSFET]
When mounted on ceramic substrate
(900mm2×0.8mm)
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15909
No. A1821-4/8
EMH2801
IF -- VF
[SBD]
1.0E+04
0°C
--25
°C
C
25°
C
C
75 °
0.01
7
5
50°
3
2
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
Forward Voltage, VF -- V
Rectangular
wave
0.45
25°C
1.0E+01
0°C
1.0E+00
--25°C
1.0E-01
0.50
[SBD]
(3)
(2) (4)
(1)
50°C
0
θ
360°
0.6
180°
6
Rectangular
wave
V
12
14
[SBD]
(1)
(2)
R
(3)
360°
180°
VR
(4)
0.0004
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.2
0
0
0.5
1.0
1.5
C -- VR
5
0.0002
2.0
Average Output Current, IO -- A
2.5
100
7
5
3
2
5
7
1.0
2
3
5
Reverse Voltage, VR -- V
7
10
2
2
3
IT13213
4
6
8
10
12
IFSM -- t
24
Surge Forward Current, IFSM(Peak) -- A
2
3
0
Average Reverse Voltage, VR -- V
[SBD]
f=1MHz
2
0
IT12194
3
10
0.1
16
IT12193
360°
θ
Sine wave
0.0006
0.4
10
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.0008
360°
8
PR(AV) -- VR
0.0014
0.0010
Sine wave
4
Reverse Voltage, VR -- V
0.0012
1.0
0.8
2
IT12192
PF(AV) -- IO
1.2
75°C
1.0E+02
Average Reverse Power Dissipation, PR(AV) -- W
0
100°C
Reverse Current, IR -- μA
25°
C
0.1
7
5
0.001
Average Forward Power Dissipation, PF(AV) -- W
[SBD]
1.0E+03
10
0°
C
3
2
3
2
Interterminal Capacitance, C -- pF
IR -- VR
1.0E+05
Ta=125°C
1.0
7
5
Ta=
1
Forward Current, IF -- A
3
2
14
16
IT12195
[SBD]
Current waveform 50Hz sine wave
20
IS
20ms
t
16
12
8
4
0
0.01
2
3
5
7 0.1
2
3
Time, t -- s
5
7 1.0
2
3
IT13214
No. A1821-5/8
EMH2801
Embossed Taping Specification
EMH2801-TL-H
No. A1821-6/8
EMH2801
Outline Drawing
EMH2801-TL-H
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
1.9
0.4
0.3
0.5
No. A1821-7/8
EMH2801
Note on usage : Since the EMH2801 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1821-8/8