2SK596S-B - ON Semiconductor

2SK596S
JFET
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20V, 150 to 350µA, 1.0mS, N-Channel
Features
•
•
•
•
Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1kW, Cin=15pF, VIN=0V, A curve)
Especiallysuited for use in condenser microphone for audio equipments and telephones
Excellent transient characteristic
Adoption of FBET process
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate-to-Drain Voltage
VGDO
Gate Current
IG
Drain Current
ID
Allowable Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Ratings
Unit
--20
V
10
mA
1
mA
100
mW
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7524-005
• Package
: SPA
• JEITA, JEDEC
: SC-72
• Minimum Packing Quantity : 500 pcs./bag
2SK596S-B
2SK596S-C
2.2
Marking
1.8
3.0
4.0
Electrical Connection
3
Rank
596S
0.4
0.5
LOT No.
0.6
2
15.0
0.4
0.4
1
1
2
3
1.3
0.7
0.7
1.3
3.0
3.8
1 : Source
2 : Gate
3 : Drain
SPA
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October 2014 - Rev. 1
1
Publication Order Number :
2SK596S/D
2SK596S
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDO
VGS(off)
Cutoff Voltage
Ratings
Conditions
Rank
min
IG=--100µA
VDS=5V, ID=1µA
typ
Unit
max
--20
V
--0.5
--1.0
B
150
240
C
210
350
V
µA
Drain Current
IDSS*
VDS=5V, VGS=0V
Forward Transfer Admittance
| yfs |
VDS=5V, VGS=0V, f=1kHz
1.0
mS
Input Capacitance
Ciss
VDS=5V, VGS=0V, f=1MHz
4.1
pF
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
0.88
pF
0.4
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Reduced Voltage Characteristic
Voltage Gain
GV
DGVV
Frequency Characteristic
DGvf
VIN=10mV, f=1kHz
VIN=10mV, f=1kHz, VCC=4.5V → 1.5V
f=1kHz → 110Hz
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
Output Noise Voltage
VNO
VIN=0V, A curve
--3.0
dB
--1.0
--3.5
dB
--1.0
dB
--110
dB
1.2
%
* : The 2SK596S is classified by IDSS as follows : (unit : µA)
Rank
IDSS
B
150 to 240
C
210 to 350
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Test Circuit
Voltage Gain
Frequency Characteristic
Harmonic Distortion
Reduced Voltage Characteristic
1kW
VCC=4.5V
VCC=1.5V
33µF
+
15pF
VTVM V
THD
OSC
ODERING INFORMATON
Package
Shipping
2SK596S-B
Device
SPA
500pcs./bag
2SK596S-C
SPA
500pcs./bag
ID -- VDS
500
ID -- VDS
400
300
Drain Current, ID -- µA
Drain Current, ID -- µA
Pb-Free
500
400
VGS=0V
200
--0.1V
--0.2V
100
0
memo
1
2
3
4
5
6
7
VGS=0V
200
--0.1V
--0.2V
100
--0.3V
--0.4V
0
300
--0.5V
8
Drain-to-Source Voltage, VDS -- V
9
0
10
HD02310
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2
--0.3V
--0.4V
0
1
2
3
--0.5V
4
Drain-to-Source Voltage, VDS -- V
5
HD03015
2SK596S
ID -- VGS
500
VDS=5V
--0.6
--0.5
--0.3
--0.2
Gate-to-Source Voltage, VGS -- V
25
°C
5°
C
--2
0
--1.0
0
IT02312
--0.9
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
Gate-to-Source Voltage, VGS -- V
VGS(off) -- IDSS
--0.7
Cutoff Voltage, VGS(off) -- V
1.0
--0.1
--0
IT02313
VDS=5V
ID=1µA
--0.65
1.1
--0.6
--0.55
0.9
0.8
--0.5
--0.54
0.7
0.6
--0.4
--0.35
100
200
300
Drain Current, IDSS -- µA
THD -- VIN
10
--0.3
500
HD02314
350µA
1.0
0
50
100
150
Input Voltage, VIN -- mV
Ciss -- VDS
10
3
5
7
10
Drain-to-Source Voltage, VDS -- V
2
IT02318
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3
400
500
HD02315
60
40
20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
Crss -- VDS
140
160
IT02317
VGS=0V
f=1MHz
2
1.0
7
5
3
3
300
PD -- Ta
3
VGS=0V
f=1MHz
3
2
200
Drain Current, IDSS -- µA
80
IT02316
5
1.0
100
100
0
200
7
7
0
120
THD : VCC=4.5V
f=1kHz
IDSS : VDS=5.0V
250µA
150µA
I DSS=
400
Allowable Power Dissipation, PD -- mW
0
100
2
°C
80
--0.1
yfs -- IDSS
VDS=5V
VGS=0V
f=1kHz
1.2
--0.4
A
0µ
160
75
25
15
1.3
Forward Transfer Admittance, yfs -- mS
A
0µ
240
Ta
=
ID
0
--0.7
Total Harmonic Distortion, THD -- %
µA
50
=3
SS
200
100
Input Capacitance, Ciss -- pF
Drain Current, ID -- µA
300
0.1
VDS=5V
320
Reverse Transfer Capacitance, Crss -- pF
Drain Current, ID -- µA
400
0.5
ID -- VGS
400
7
1.0
2
3
5
7
10
Drain-to-Source Voltage, VDS -- V
2
3
IT02319
2SK596S
GV : VCC=4.5V
VIN=10mV
RL=1.0kW
f=1kHz
IDSS : VDS=5.0V
Voltage Gain, GV -- dB
--1
--2
GV -- IDSS
Reduced Voltage Characteristics, DGVV -- dB
0
--3
--4
--5
--6
--7
0
100
300
Drain Current, IDSS -- µA
400
THD -- IDSS
2.5
Total Harmonic Distortion, THD -- %
200
500
HD02320
THD : VCC=4.5V
VIN=30mV
f=1kHz
IDSS : VDS=5.0V
2.0
1.5
1.0
0.5
0
0
100
200
300
Drain Current, IDSS -- µA
400
500
HD02322
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4
DGVV -- IDSS
--0.5
DGVV : VCC=4.5V→1.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
--0.7
--0.9
--1.1
--1.3
--1.5
--1.7
0
100
200
300
Drain Current, IDSS -- µA
400
500
HD02321
2SK596S
Outline Drawing
2SK596S-B, 2SK596S-C
Mass (g) Unit
0.13
mm
* For reference
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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