SP8M5 Transistors Switching SP8M5 zExternal dimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). SOP8 5.0±0.2 (5) (1) (4) Max.1.75 1.5±0.1 0.15 0.5±0.1 6.0±0.3 3.9±0.15 (8) zApplication Power switching, DC / DC converter. 0.2±0.1 0.4±0.1 0.1 1.27 Each lead has same dimensions zEquivalent circuit zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature Drain current Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits Nchannel Pchannel 30 −30 ±20 ±20 ±6.0 ±7.0 ±24 ±28 1.6 −1.6 6.4 −28 2 2 150 150 −55 to +150 −55 to +150 (8) Unit V V A A A A W °C °C ∗1 (7) ∗2 (6) (5) ∗2 ∗1 (1) (2) (3) (4) ∗1 ∗2 (1) ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. (8) (7) (6) (5) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zThermal resistance (Ta=25°C) Parameter Channel to ambient Symbol Rth (ch-A) Limits 62.5 Unit °C / W ∗ ∗MOUNTED ON A CERAMIC BOARD. 1/5 SP8M5 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Min. − 30 − 1.0 − − − 4.0 − − − − − − − − − − Typ. Max. − − − − 21 30 33 − 520 150 95 9 21 36 13 7.2 1.8 2.8 ±10 − 1 2.5 28 41 45 − − − − − − − − 10.1 − − Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=6.0A, VGS=10V ID=6.0A, VGS=4.5V ID=6.0A, VGS=4V ID=6.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3A, VDD 15V VGS=10V RL=5.00Ω RGS=10Ω VDD 15V VGS=5V ID=6.0A ∗Pulsed zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS=6.4A, VGS=0V ∗Pulsed 2/5 SP8M5 Transistors P-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 − Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) −1.0 − ∗ Static drain-source on-state − RDS (on) resistance − 6.0 Yfs ∗ Forward transfer admittance − Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time tr ∗ − Turn-off delay time td (off) ∗ − Fall time tf ∗ − Total gate charge Qg ∗ − Gate-source charge Qgs ∗ − Gate-drain charge Qgd ∗ Typ. Max. − − − − 20 25 30 − 2600 450 350 20 50 110 70 25 5.5 10 ±10 − −1 −2.5 28 35 42 − − − − − − − − − − − Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −7.0A, VGS= −10V ID= −7.0A, VGS= −4.5V ID= −7.0A, VGS= −4.0V ID= −7.0A, VDS= −10V VDS= −10V VGS=0V f=1MHz ID= −3.5A, VDD −15V VGS= −10V RL=4.3Ω RGS=10Ω VDD −15V VGS= −5V ID= −7.0A ∗Pulsed zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS=−1.6A, VGS=0V ∗Pulsed 3/5 SP8M5 Transistors N-ch zElectrical characteristic curves 1000 1000 Ciss Coss Crss 0.1 1 10 tr 10 td (on) 1 0.01 100 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) VDS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 1 0 ID=6A ID=3A 50 0 0 2 4 6 8 10 12 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1000 14 16 100 VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 4 6 8 10 10 150 100 2 12 14 Fig.3 Dynamic Input Characteristics 1 1 10 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.0 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=10V Pulsed 1 3 GATE-SOURCE VOLTAGE : VGS (V) 10 1 0.1 4 TOTAL GATE CHARGE : Qg (nC) Ta=25°C Pulsed Fig.4 Typical Transfer Characteristics 100 5 0 10 200 GATE-SOURCE VOLTAGE : VGS (V) 1000 6 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 1 Ta=25°C 9 VDD=15V ID=6A 8 RG=10Ω 7 Pulsed DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 10 1 SOURCE CURRENT : Is (A) 10 0.01 td (off) Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 tf 100 10 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 1000 100 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.1 1 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 10 4/5 SP8M5 Transistors P-ch zElectrical characteristic curves 1000 Coss Crss 10 100 tr td (on) 10 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : −VDS (V) 0.1 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : −ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.001 0.0 VGS= −10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 3 2 1 0 0 5 150 100 ID=−7.0A 50 10 10 15 20 10 25 30 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 ID=−3.5A 0 0 2 4 6 8 10 12 14 0.01 0.0 16 100 10 0.1 VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 10 1.0 1.5 Fig.6 Source Current vs. Source-Drain Voltage Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 0.5 SOURCE-DRAIN VOLTAGE : −VSD (V) GATE-SOURCE VOLTAGE : −VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1 0.1 4 Fig.3 Dynamic Input Characteristics Ta=25°C Pulsed Fig.4 Typical Transfer Characteristics 10 5 TOTAL GATE CHARGE : Qg (nC) 200 GATE-SOURCE VOLTAGE : −VGS (V) 100 6 Fig.2 Switching Characteristics VDS= −10V Pulsed 1 10 Ta=25°C VDD= −15V ID= −7A RG=10Ω Pulsed 7 DRAIN CURRENT : −ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 SOURCE CURRENT : −IS (A) 1 tf td (off) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 0.1 1000 Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : −VGS (V) Ciss 100 0.01 8 10000 Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 1000 100 10 0.1 VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) 10 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0