ROHM SP8M5

SP8M5
Transistors
Switching
SP8M5
zExternal dimensions (Unit : mm)
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
SOP8
5.0±0.2
(5)
(1)
(4)
Max.1.75
1.5±0.1
0.15
0.5±0.1
6.0±0.3
3.9±0.15
(8)
zApplication
Power switching, DC / DC converter.
0.2±0.1
0.4±0.1
0.1
1.27
Each lead has same dimensions
zEquivalent circuit
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Pulsed
Source current
Continuous
(Body diode)
Pulsed
Total power dissipation (TC=25°C)
Channel temperature
Storage temperature
Drain current
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel
Pchannel
30
−30
±20
±20
±6.0
±7.0
±24
±28
1.6
−1.6
6.4
−28
2
2
150
150
−55 to +150 −55 to +150
(8)
Unit
V
V
A
A
A
A
W
°C
°C
∗1
(7)
∗2
(6)
(5)
∗2
∗1
(1) (2) (3) (4)
∗1
∗2
(1)
∗1
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
(8) (7) (6) (5)
(4)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-A)
Limits
62.5
Unit
°C / W
∗
∗MOUNTED ON A CERAMIC BOARD.
1/5
SP8M5
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
Min.
−
30
−
1.0
−
−
−
4.0
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
21
30
33
−
520
150
95
9
21
36
13
7.2
1.8
2.8
±10
−
1
2.5
28
41
45
−
−
−
−
−
−
−
−
10.1
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=1mA
ID=6.0A, VGS=10V
ID=6.0A, VGS=4.5V
ID=6.0A, VGS=4V
ID=6.0A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=3A, VDD 15V
VGS=10V
RL=5.00Ω
RGS=10Ω
VDD 15V
VGS=5V
ID=6.0A
∗Pulsed
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
IS=6.4A, VGS=0V
∗Pulsed
2/5
SP8M5
Transistors
P-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
IGSS
−
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −30
−
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th) −1.0
−
∗
Static drain-source on-state
−
RDS (on)
resistance
−
6.0
Yfs ∗
Forward transfer admittance
−
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance
Crss
−
Turn-on delay time
td (on) ∗
−
Rise time
tr ∗
−
Turn-off delay time
td (off) ∗
−
Fall time
tf ∗
−
Total gate charge
Qg ∗
−
Gate-source charge
Qgs ∗
−
Gate-drain charge
Qgd ∗
Typ.
Max.
−
−
−
−
20
25
30
−
2600
450
350
20
50
110
70
25
5.5
10
±10
−
−1
−2.5
28
35
42
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS= ±20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
ID= −7.0A, VGS= −10V
ID= −7.0A, VGS= −4.5V
ID= −7.0A, VGS= −4.0V
ID= −7.0A, VDS= −10V
VDS= −10V
VGS=0V
f=1MHz
ID= −3.5A, VDD −15V
VGS= −10V
RL=4.3Ω
RGS=10Ω
VDD −15V
VGS= −5V
ID= −7.0A
∗Pulsed
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS=−1.6A, VGS=0V
∗Pulsed
3/5
SP8M5
Transistors
N-ch
zElectrical characteristic curves
1000
1000
Ciss
Coss
Crss
0.1
1
10
tr
10
td (on)
1
0.01
100
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
VDS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2
1
0
ID=6A
ID=3A
50
0
0
2
4
6
8
10
12
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1000
14
16
100
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.1
4
6
8
10
10
150
100
2
12
14
Fig.3 Dynamic Input Characteristics
1
1
10
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS=10V
Pulsed
1
3
GATE-SOURCE VOLTAGE : VGS (V)
10
1
0.1
4
TOTAL GATE CHARGE : Qg (nC)
Ta=25°C
Pulsed
Fig.4 Typical Transfer Characteristics
100
5
0
10
200
GATE-SOURCE VOLTAGE : VGS (V)
1000
6
Fig.2 Switching Characteristics
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1
Ta=25°C
9 VDD=15V
ID=6A
8
RG=10Ω
7 Pulsed
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
10
1
SOURCE CURRENT : Is (A)
10
0.01
td (off)
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
100
tf
100
10
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25°C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10000
1000
100
VGS=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.1
1
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
10
4/5
SP8M5
Transistors
P-ch
zElectrical characteristic curves
1000
Coss
Crss
10
100
tr
td (on)
10
1
0.01
100
0.1
DRAIN-SOURCE VOLTAGE : −VDS (V)
0.1
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : −ID (A)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.001
0.0
VGS= −10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
3
2
1
0
0
5
150
100
ID=−7.0A
50
10
10
15
20
10
25
30
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
ID=−3.5A
0
0
2
4
6
8
10
12
14
0.01
0.0
16
100
10
0.1
VGS= −4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
10
1.0
1.5
Fig.6 Source Current vs.
Source-Drain Voltage
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
0.5
SOURCE-DRAIN VOLTAGE : −VSD (V)
GATE-SOURCE VOLTAGE : −VGS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1
0.1
4
Fig.3 Dynamic Input Characteristics
Ta=25°C
Pulsed
Fig.4 Typical Transfer Characteristics
10
5
TOTAL GATE CHARGE : Qg (nC)
200
GATE-SOURCE VOLTAGE : −VGS (V)
100
6
Fig.2 Switching Characteristics
VDS= −10V
Pulsed
1
10
Ta=25°C
VDD= −15V
ID= −7A
RG=10Ω
Pulsed
7
DRAIN CURRENT : −ID (A)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
1
SOURCE CURRENT : −IS (A)
1
tf
td (off)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
0.1
1000
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : −VGS (V)
Ciss
100
0.01
8
10000
Ta=25°C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10000
1000
100
10
0.1
VGS= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
10
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0