SP8M21 Transistors 4V Drive Nch+Pch MOSFET SP8M21 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Unit : mm) SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). (8) Each lead has same dimensions zApplications Switching zPackage specifications Package (8) Taping (7) (6) (5) TB Code Type zInner circuit Basic ordering unit (pieces) 2500 SP8M21 ∗2 ∗2 ∗1 (1) ∗1 (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits Tr1 : N-ch Tr2 : P-ch 45 −45 20 −20 ±4.0 ±6.0 ±16 ±24 1.0 −1.0 24 −16 2.0 V V A A A A W / TOTAL 1.4 150 −55 to +150 W / ELEMENT °C °C Unit ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Rev.A 1/7 SP8M21 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 45 − 1.0 − − − 6.0 − − − − − − − − − − Typ. Max. − − − − 18 24 26 − 1400 310 175 19 30 72 27 15.4 3.7 6.5 10 − 1 2.5 25 34 37 − − − − − − − − 21.6 − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 6.0A, VGS= 10V ID= 6.0A, VGS= 4.5V ID= 6.0A, VGS= 4.0V VDS= 10V, ID= 6.0A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 3.0A VGS= 10V RL= 8Ω RG=10Ω VDD 25V, VGS= 5V ID= 6.0A RL= 4Ω, RG= 10Ω Unit V IS= 6.0A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − 1.2 Conditions ∗Pulsed Rev.A 2/7 SP8M21 Transistors P-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −45 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on)∗ resistance − Yfs ∗ 6.0 Forward transfer admittance − Ciss Input capacitance Output capacitance Coss − Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 33 43 47 − 2400 320 200 23 23 90 22 20.0 6.5 7.5 −10 − −1 −2.5 46 60 65 − − − − − − − − 28.0 − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS= −20V, VDS=0V ID= −1mA, VGS=0V VDS= −45V, VGS=0V VDS= −10V, ID= −1mA ID= −4.0A, VGS= −10V ID= −4.0A, VGS= −4.5V ID= −4.0A, VGS= −4.0V VDS= −10V, ID= −4.0A VDS= −10V VGS= 0V f=1MHz VDD −25V ID= −2.0A VGS= −10V RL= 12.5Ω RG= 10Ω VDD −25V, VGS= −5V ID= −4.0A RL= 6Ω, RG= 10Ω Unit V IS= −4.0A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − −1.2 Conditions ∗Pulsed Rev.A 3/7 SP8M21 Transistors N-ch zElectrical characteristic curves 10000 10 Ta=25°C VDD=25V VGS=10V RG=10Ω Pulsed SWITCHING TIME : t (ns) Ciss Coss Crss 100 10 0.1 1 10 1000 tf td(off) 100 td(on) tr 10 1 0.01 100 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 1.0 1.5 2.0 2.5 3.0 3.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) VDS= 10V Pulsed 0.001 0.5 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 5 4 3 2 1 0 10 5 10 15 20 30 Fig.3 Dynamic Input Characteristics 10 VGS=0V Pulsed Ta=25°C Pulsed 150 100 50 25 TOTAL GATE CHARGE : Qg (nC) ID=6.0A Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 ID=3.0A 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (mΩ) VGS=10V Pulsed 10 1 0.01 6 0.01 0.0 1000 100 VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics 100 7 0 200 GATE-SOURCE VOLTAGE : VGS (V) 1000 8 10 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 0.1 ID=6.0A RG=10Ω Pulsed DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 10 1 SOURCE CURRENT : IS (A) 1000 Ta=25°C 9 VDD=25V Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (mΩ) CAPACITANCE : C (pF) Ta=25°C f=1MHz VGS=0V GATE-SOURCE VOLTAGE : VGS (V) 10000 1000 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C 100 Ta= −25°C 10 1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Rev.A 4/7 SP8M21 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (mΩ) Transistors 1000 Ta=25°C Pulsed 100 VGS=4.0V VGS=4.5V VGS=10V 10 1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current (Ι ) Rev.A 5/7 SP8M21 Transistors P-ch zElectrical characteristic curves Ta=25°C VDD= −25V VGS= −10V RG=10Ω Pulsed SWITCHING TIME : t (ns) Ciss 1000 Coss Crss 10 0.1 1 10 tf td(off) 100 td(on) 10 tr 1 0.01 100 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 1.0 1.5 2.0 2.5 3.0 3.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : −ID (A) VDS= −10V Pulsed 0.001 0.5 VGS= −10V Pulsed 10 1 0.01 0.1 1 DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 4 3 2 1 0 0 5 10 15 20 25 30 10 150 100 ID= −4.0A 50 ID= −2.0A 100 VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 1 0.01 0.1 40 1 10 DRAIN CURRENT : −ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.01 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1000 35 Fig.3 Dynamic Input Characteristics Ta=25°C Pulsed 0 10 TOTAL GATE CHARGE : Qg (nC) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (mΩ) 100 5 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : −VSD (V) GATE-SOURCE VOLTAGE : −VGS (V) Fig.4 Typical Transfer Characteristics Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 6 200 GATE-SOURCE VOLTAGE : −VGS (V) 1000 7 10 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 0.1 ID= −4.0A RG=10Ω 8 Pulsed DRAIN CURRENT : −ID (A) DRAIN-SOURCE VOLTAGE : −VDS (V) 10 1 Ta=25°C 9 VDD= −25V SOURCE CURRENT : −IS (A) 100 1000 Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (mΩ) CAPACITANCE : C (pF) Ta=25°C f=1MHz VGS=0V 10 GATE-SOURCE VOLTAGE : −VGS (V) 10000 10000 1000 VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C 100 Ta= −25°C 10 1 0.01 0.1 1 10 DRAIN CURRENT : −ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Rev.A 6/7 SP8M21 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (mΩ) Transistors 1000 Ta=25°C Pulsed 100 VGS= −4.0V VGS= −4.5V VGS= −10V 10 1 0.01 0.1 1 10 DRAIN CURRENT : −ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current (Ι ) Rev.A 7/7 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1