QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (2.5V). (5) 0.85 0.7 (4) 1.6 2.8 (6) (2) 0~0.1 0.3~0.6 (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : M04 zApplications Load switch, inverter zEquivalent circuit zPackaging specifications Package Taping (5) TR Code Type (6) Basic ordering unit (pieces) (4) ∗1 3000 QS6M4 ∗2 ∗2 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg ∗1 Limits Nchannel Pchannel 30 −20 ±12 ±12 ±1.5 ±1.5 ±6.0 ±6.0 0.8 −0.75 6.0 −6.0 1.25 0.9 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol ∗ Rth (ch-a) Limits 100 139 Unit °C / W / TOTAL °C / W / ELEMENT ∗ Mounted on a ceramic board Rev.B 1/5 QS6M4 Transistors zElectrical characteristics (Ta=25°C) <Tr1. N-ch MOSFET> Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 0.5 − − − 1.0 − − − − − − − − − − Typ. Max. − − − − 170 180 260 − 80 25 15 7 18 15 15 1.6 0.5 0.9 ±10 − 1 1.5 230 245 360 − − − − − − − − − − − Typ. − Max. 1.2 Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V / VDS=0V ID=1mA / VGS=0V VDS=30V / VGS=0V VDS=10V / ID=1mA ID=1.5A / VGS=4.5V ID=1.5A / VGS=4.0V ID=1.0A / VGS=2.5V VDS=10V / ID=1.0A VDS=10V VGS=0V f=1MHz ID=1A, VDD 15V VGS=4.5V RL=15Ω / RG=10Ω VDD 15V VGS=4.5V ID=1.5A RL=10Ω RG=10Ω ∗Pulsed zBody diode characteristics (Source-Drain) <Tr1. N-ch MOSFET> Parameter Forward voltage Symbol VSD ∗ Min. − Unit V Conditions IS=3.2A / VGS=0V ∗Pulsed Rev.B 2/5 QS6M4 Transistors zElectrical characteristics (Ta=25°C) <Tr2. P-ch MOSFET> Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.7 − ∗ Static drain-source on-state − RDS (on) resistance − Yfs ∗ 1.0 Forward transfer admittance − Input capacitance Ciss Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time td (on) ∗ − Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 155 170 310 − 270 40 35 10 12 45 20 3.0 0.8 0.85 ±10 − −1 −2.0 215 235 430 − − − − − − − − − − − Typ. − Max. −1.2 Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±12V / VDS=0V ID= −1mA / VGS=0V VDS= −20V / VGS=0V VDS= −10V / ID=−1mA ID= −1.5A / VGS= −4.5V ID= −1.5A / VGS= −4.0V ID= −0.75A / VGS= −2.5V VDS= −10V / ID= −0.75A VDS= −10V VGS=0V f=1MHz ID= −0.75A, VDD −15V VGS= −4.5V RL=20Ω / RG=10Ω VDD −15V RL=10Ω VGS= −4.5V RG=10Ω ID= −1.5A ∗Pulsed zBody diode characteristics (Source-Drain) <Tr2. P-ch MOSFET> Parameter Forward voltage Symbol VSD Min. − Unit V Conditions IS= −0.75A / VGS=0V Rev.B 3/5 QS6M4 Transistors N-ch zElectrical characteristic curves 1000 Ciss Crss Coss 10 0.1 1 10 td (off) 10 td (on) tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : VDS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 1 10 1.0 1.5 10 0.8 ID=1.5A 0.7 ID=0.75A 0.6 2.0 Fig.3 Dynamic Input Characteristics VGS=0V Pulsed 0.5 0.4 0.3 0.2 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.0 0.5 10 1 VGS=4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.1 1 10 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.5 TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V) VGS=4.5V Pulsed 0.1 0.01 0 Ta=25°C Pulsed 0.9 Fig.4 Typical Transfer Characteristics 1 0 10 1.0 GATE-SOURCE VOLTAGE : VGS (V) 10 1 Fig.2 Switching Characteristics VDS=10V Pulsed 1 2 DRAIN CURRENT : ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 3 SOURCE CURRENT : Is (A) 1 0.01 tf 100 Ta=25°C VDD=15V 5 ID=1.5A RG=10Ω Pulsed 4 Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 6 Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 10 1 0.1 0.01 VGS=2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Rev.B 4/5 QS6M4 Transistors P-ch zElectrical characteristic curves 1000 Coss Crss 10 0.01 0.1 1 10 td (off) td (on) 10 tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : −VDS (V) 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 1 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 3 2 1 0 10 0 0.5 1.5 2.0 ID= −1.5A 300 200 100 0 2 4 6 8 2.5 3.0 3.5 Fig.3 Dynamic Input Characteristics ID= −0.75A 0 1.0 TOTAL GATE CHARGE : Qg (nC) Ta=25°C Pulsed 400 Fig.4 Typical Transfer Characteristics VGS= −4.5V Pulsed 4 10 500 GATE-SOURCE VOLTAGE : −VGS (V) 10000 5 Fig.2 Switching Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : −ID (A) VDS= −10V Pulsed 1 6 DRAIN CURRENT : −ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 GATE-SOURCE VOLTAGE : −VGS (V) 100 tf 100 Ta=25°C VDD= −15V ID= −1.5A RG=10Ω Pulsed 7 SOURCE CURRENT : −IS (A) Ciss 8 Ta=25°C VDD= −15V VGS= −4.5V RG=10Ω Pulsed 10 12 Ta=25°C VGS=0V Pulsed 1 0.1 0.01 0.0 0.5 1.0 1.5 2.0 GATE-SOURCE VOLTAGE : −VGS (V) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage 10000 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 1 10 10000 1000 VGS= −2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 1 10 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Rev.B 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0