ROHM EM6M1T2R

EM6M1
Transistors
2.5V Drive Nch+Pch MOSFET
EM6M1
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
EMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
Each lead has same dimensions
Abbreviated symbol : M01
zApplications
Switching
zPackaging specifications
Package
Type
zInner circuit
Taping
Code
T2R
Basic ordering unit (pieces)
8000
(6)
(5)
(4)
∗1
EM6M1
∗2
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
VDSS
VGSS
ID
IDP∗1
Drain current
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
PD ∗2
Tch
Tstg
Limits
Tr1 : N-ch
Tr2 : P-ch
−20
30
± 20
±12
±0.1
±0.2
±0.4
±0.4
150
120
150
−55 to +150
Unit
V
V
A
A
mW / TOTAL
mW / ELEMENT
°C
°C
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
1/6
EM6M1
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
0.9
0.2
0.2
Max.
±1
−
1
1.5
8
13
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS= ±20V, VDS=0V
ID=10µA, VGS=0V
VDS=30V, VGS=0V
VDS=3V, ID=100µA
ID=10mA, VGS=4V
ID=1mA, VGS=2.5V
VDS=3V, ID=10mA
VDS=5V
VGS=0V
f=1MHz
VDD 5V
ID=10mA
VGS=5V
RL=500Ω
RG=10Ω
VDD 15V, ID=0.1A
VGS=4.5V
RL=150Ω, RG=10Ω
Parameter
Symbol Min.
Gate-source leakage
−
IGSS
Drain-source breakdown voltage V(BR) DSS −20
Zero gate voltage drain current
IDSS
−
Gate threshold voltage
VGS (th) −0.7
−
Static drain-source on-state
∗
RDS (on)
−
resistance
−
Forward transfer admittance
Yfs ∗ 0.2
Input capacitance
Ciss
−
Coss
Output capacitance
−
Crss
Reverse transfer capacitance
−
td (on) ∗
Turn-on delay time
−
tr ∗
Rise time
−
td (off) ∗
Turn-off delay time
−
Fall time
−
tf ∗
Total gate charge
−
Qg ∗
−
Gate-source charge
Qgs ∗
−
Qgd ∗
Gate-drain charge
Typ.
−
−
−
−
1.0
1.1
2.0
−
50
5
5
9
6
35
45
1.2
0.2
0.2
Max.
±10
−
−1
−2.0
1.5
1.6
3.0
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS= ±12V, VDS=0V
ID= −1mA, VGS=0V
VDS= −20V, VGS=0V
VDS= −10V, ID= −1mA
ID= −0.2A, VGS= −4.5V
ID= −0.2A, VGS= −4V
ID= −0.2A, VGS= −2.5V
VDS= −10V, ID= −0.15A
VDS= −10V
VGS= 0V
f=1MHz
VDD −15V
ID= −0.15A
VGS= −4.5V
RL= 100Ω
RG= 10Ω
VDD −15V, ID= −0.2A
VGS= −4.5V
RL= 75Ω, RG= 10Ω
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
∗Pulsed
P-ch
zElectrical characteristics (Ta=25°C)
∗Pulsed
2/6
EM6M1
Transistors
N-ch
zElectrical characteristic curve
50
DRAIN CURRENT : ID(A)
50m
20m
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
0.2m
0.1m
0
1
3
2
4
Ta=125°C
75°C
25°C
−25°C
20
10
5
2
1
0.5
0.001 0.002
0.005
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
Ta=25°C
Pulsed
10
ID=0.1A
ID=0.05A
0
0
5
10
15
20
10
5
2
1
0.5
0.001 0.002
10
Coss
Crss
1
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DRAIN CURRENT : ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current ( ΙΙ )
200m
VGS=0V
Pulsed
100m
Ta=−25°C
25°C
75°C
125°C
0.05
0.02
0.01
0.005
0.002
50m
20m
Ta=125°C
75°C
25°C
−25°C
10m
5m
2m
1m
0.5m
0.2m
0.001
0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
1000
0
0.5
1
1.5
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
tf
500
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Forward Transfer
Admittance vs. Drain Current
SWITHING TIME : t (ns)
CAPACITANCE : C (pF)
0.5
DRAIN CURRENT : ID (A)
Ciss
2
0.2
VDS=3V
Pulsed
0.1
Ta=25°C
f=1MHZ
VGS=0V
5
0.1
0.2
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
20
0.05
0.5
GATE-SOURCE VOLTAGE : VGS (V)
50
0.02
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current ( Ι )
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
Fig.1 Typical Transfer Characteristics
5
0.01
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
20
DRAIN CURRENT : ID(A)
GATE-SOURCE VOLTAGE : VGS(V)
15
50
VGS=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
VDS=3V
Pulsed
100m
SOURCE CURRENT : IS (A)
200m
td(off)
200
100
50
20
tr
td(on)
10
5
0.5
0.1
0.2
0.5
1
2
5
10
20
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.7
Typical Capacitance vs.
Drain-Source Voltage
50
2
0.1 0.2
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.8 Switching Characteristics
3/6
EM6M1
Transistors
P-ch
zElectrical characteristic curve
0.001
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Ta=125°C
75°C
25°C
−25°C
1
0.1
0.01
GATE-SOURCE VOLTAGE : −VGS (V)
0.1
VGS= −2.5V
1
VGS= −4V
VGS= −4.5V
DRAIN CURRENT : −ID (A)
CAPACITANCE : C (pF)
Ciss
10
Coss
SWITCHING TIME : t (ns)
1000
0.1
4
3
ID= −0.2A
2
ID= −0.1A
1
0
1
10
100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.7 Typical Capacitance vs. Drain-Source Voltage
Ta=25°C
VDD= −15V
VGS= −4.5V
RG=10Ω
Pulsed
tf
td(off)
10
td(on)
tr
1
0.01
1
2
3
4
5
6
7
8
9
10
GATE-SOURCE VOLTAGE : −VGS (V)
100
Crss
1
Ta=25°C
Pulsed
0
0.1
Fig.5 Static Drain-Source On-State Resistance
vs. Drain Current ( Ι )
100
1
Fig.3 Static Drain-Source On-State Resistance
vs. Drain Current ( ΙΙ )
DRAIN CURRENT : −ID (A)
Fig.4 Static Drain-Source On-State Resistance
vs. Drain Current ( ΙΙΙ )
0
0.01
0.1
5
Ta=25°C
Pulsed
0.1
0.01
1
Ta=25°C
f=1MHz
VGS=0V
1
DRAIN CURRENT : −ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
1
0.1
0.01
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
1
Fig.2 Static Drain-Source On-State Resistance
vs. Drain Current ( Ι )
10
VGS= −2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.1
VGS= −4V
Pulsed
DRAIN CURRENT : −ID (A)
Fig.1 Typical Transfer Characteristics
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
0.01
10
VGS= −4.5V
Pulsed
Fig.6 Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
4.5
GATE-SOURCE VOLTAGE : −VGS (V)
Ta=125°C
75°C
25°C
−25°C
0.1
10
VDS= −10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
DRAIN CURRENT : −ID (A)
1
Ta=25°C
4 VDD= −15V
ID= −0.2A
3.5 RG= 10Ω
Pulsed
3
2.5
2
1.5
1
0.5
0
0.1
DRAIN CURRENT : −ID (A)
Fig.8 Switching Characteristics
1
0
0.2
0.4
0.6
0.8
1
1.2
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
4/6
EM6M1
Transistors
SOURCE CURRENT : −IS (A)
1
VGS=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.10 Source Current vs. Source-Drain Voltage
N-ch
zMeasurement circuit
Pulse Width
VGS
RG
ID
VDS
RL
D.U.T.
90%
50%
10%
VGS
50%
10%
VDS
VDD
10%
td(off)
ton
Fig.9 Switching Time Test Circuit
90%
90%
tr
td(on)
tf
toff
Fig.10 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.11 Gate Charge Measurement Circuit
Fig.12 Gate Charge Waveform
5/6
EM6M1
Transistors
P-ch
zMeasurement circuit
Pulse Width
VGS
VGS
10%
50%
ID
VDS
RL
D.U.T.
RG
50%
90%
10%
VDD
10%
90%
VDS
td(on)
tr
90%
td(off)
ton
tf
toff
Fig.12 Switching Time Waveforms
Fig.11 Switching Time Test Circuit
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.13 Gate Charge Measurement Circuit
Fig.14 Gate Charge Waveform
6/6
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0