US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 zStructure Silicon N-channel / P-channel MOSFET zDimensions (Unit : mm) TUMT6 0.2Max. zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 zApplication Power switching, DC / DC converter. zPackaging specifications Package zEquivalent circuit Taping (6) (5) TR Code Type 3000 Basic ordering unit (pieces) (4) ∗1 US6M1 ∗2 ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed PD ∗2 Total power dissipation Tch Tstg Channel temperature Storage temperature Limits Unit Tr1 : Nchannel Tr2 : Pchannel 30 V −20 20 V −12 A ±1 ±1.4 A ±4 ±5.6 0.6 A −0.4 5.6 A −4 1 W / TOTAL 0.7 150 −55 to +150 W / ELEMENT °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. zThermal resistance Parameter Channel to ambient ∗2 Mounted on a ceramic board. Symbol Rth (ch-a)∗ Limits 125 179 Unit °C / W /TOTAL °C / W / ELEMENT Rev.B 1/7 US6M1 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Min. − 30 − 1.0 − − − 1.0 − − − − − − − − − − Typ. Max. − − − − 170 250 270 − 70 15 12 6 6 13 8 1.4 0.6 0.3 10 − 1 2.5 240 350 380 − − − − − − − − 2.0 − − Unit µA V µA V Conditions S pF pF pF ns ns ns ns nC nC nC VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=1.4A, VGS=10V ID=1.4A, VGS=4.5V ID=1.4A, VGS=4V ID=1.4A, VDS=10V VDS=10V VGS=0V f=1MHz ID=0.7A, VDD 15V VGS=10V RL=21Ω RG=10Ω VDD 15V RL=11Ω VGS=5V RG=10Ω ID=1.4A Unit V Test Conditions IS=0.6A, VGS=0V mΩ ∗Pulsed zBody diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Rev.B 2/7 US6M1 Transistors P-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.7 − ∗ Static drain-source on-state − RDS (on) resistance − Yfs ∗ 0.7 Forward transfer admittance − Input capacitance Ciss Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5 −10 − −1 −2.0 390 430 800 − − − − − − − − − − − Unit µA V µA V Conditions S pF pF pF ns ns ns ns nC nC nC VGS=12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −1A, VGS= −4.5V ID= −1A, VGS= −4V ID= −0.5A, VGS= −2.5V ID= −0.5A, VDS= −10V VDS= −10V VGS=0V f=1MHz ID= −0.5A, VDD −15V VGS= −4.5V RL=30Ω RG=10Ω VDD −15V RL=15Ω VGS= −4.5V RG=10Ω ID= −1A Unit V Test Conditions IS= −0.4A, VGS=0V mΩ ∗Pulsed zBody diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Rev.B 3/7 US6M1 Transistors N-ch zElectrical characteristic curves 1000 Ciss Crss Coss 10 0.1 1 10 td (off) 10 td (on) tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : VDS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) DRAIN CURRENT : ID (A) 0.1 0.01 0.5 1.0 1.5 2.0 2.5 ID=1.5A 0.7 ID=0.75A 0.6 0.5 0.4 0.3 0.2 1 10 1 1.5 2 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.0 0.5 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 1.5 Fig.6 Source Current vs. Source-Drain Voltage 10 VGS=4.0V Pulsed 0.1 0.01 1.0 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 0.5 0.1 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0 Fig.3 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) VGS=4.5V Pulsed 0.1 0.01 0 10 0.8 Fig.4 Typical Transfer Characteristics 1 1 Ta=25°C Pulsed 0.9 GATE-SOURCE VOLTAGE : VGS (V) 10 2 TOTAL GATE CHARGE : Qg (nC) 1.0 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.001 0.0 3 Fig.2 Switching Characteristics VDS=10V Pulsed 1 10 Ta=25°C VDD=15V 5 ID=1.5A RG=10Ω Pulsed 4 DRAIN CURRENT : ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 SOURCE CURRENT : Is (A) 1 0.01 tf 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 100 6 Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 1 0.1 0.01 VGS=2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Rev.B 4/7 US6M1 Transistors P-ch zElectrical characteristic curves 10000 Ciss 100 Crss Coss 0.1 1 10 1000 tf 100 td (off) td (on) 10 tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : −VDS (V) 0.1 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=25°C VDS= −10V Pulsed 5 4 3 2 1 0 0 0.5 Ta=25°C Pulsed 750 ID= −1A ID= −0.5A 250 0 0 2 4 6 8 1.5 2 2.5 3 Fig.3 Dynamic Input Characteristics 1000 500 1 10 12 10 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 GATE-SOURCE VOLTAGE : −VGS (V) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage 10000 1000 100 0.01 VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 10000 1000 100 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) GATE-SOURCE VOLTAGE : −VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : −ID (A) 6 TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 Ta=25°C VDD= −15V ID= −1A RG=10Ω Pulsed 7 DRAIN CURRENT : −ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 REVERSE DRAIN CURRENT : −IS (A) 10 0.01 8 Ta=25°C VDD= −15V VGS= −4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : −VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 10000 1000 VGS= −2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 0.01 0.1 1 10 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Rev.B 5/7 US6M1 Transistors N-ch zMeasurement circuit Pulse Width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. 10% RG VDD 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Rev.B 6/7 US6M1 Transistors P-ch zMeasurement circuit Pulse Width VGS ID VDS VGS 10% 50% 90% 50% RL 10% D.U.T. 10% RG VDD VDS 90% td(on) 90% td(off) tr ton Fig.3-1 Switching Time Measurement Circuit tf toff Fig.3-2 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform Rev.B 7/7 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1