Preliminary Datasheet RJK1209JPE 120V - 80A - N Channel Power MOS FET High Speed Power Switching R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 14 mΩ typ. Low input capacitance: Ciss = 4600 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 2, 4 D 4 1 2 1. 2. 3. 4. 1G 3 Gate Drain Source Drain S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Strage temperature Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAP Note2 EAR Note2 Value 120 ±20 80 320 80 45 173 Unit V V A A A A mJ Pch Note3 Tch Note4 Tstg 150 175 W °C °C –55 to +150 Notes: 1. PW ≤ 10μs duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4. AEC-Q101 compliant Thermal Impedance Characteristics • Channel to case thermal impedance θch-c: 1.0°C/W R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Page 1 of 6 RJK1209JPE Preliminary Electrical Characteristics (Ta = 25°C) Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Symbol IGSS IDSS VGS(off) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min — — 2.4 — Typ — — — 14 Max ±10 10 3.6 19 Unit μA μA V mΩ — — — — — — — — — — — — 4600 570 190 65 18 12 30 13 75 8 0.96 100 — — — — — — — — — — 1.25 — pF pF pF nC nC nC ns ns ns ns V ns Test Conditions VGS = ±20 V, VDS = 0 VDS = 120 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 40 A, VGS = 10 V Note5 VDS = 10V, VGS = 0, f = 1 MHz VDD = 50 V, VGS = 10 V, ID = 80 A ID = 40 A, RL = 0.75 Ω, VGS = 10 V, RG = 4.7 Ω IF = 80 A, VGS = 0 Note5 IF = 80 A, VGS = 0 diF/dt = 100 A/μs 5. Pulse test R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Page 2 of 6 RJK1209JPE Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 μs 10 Op er at 0.1 s Operation in this area is limited RDS(on) m 1 DC ion Drain Current ID (A) μs 0 = Channel Dissipation 10 10 PW 50 s 100 m 150 100 10 200 1 Pch (W) 250 0.01 Tc = 25°C 1 shot Pulse 0 50 100 150 Case Temperature 0.001 0.1 200 Tc (°C) 10 100 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 1 Typical Transfer Characteristics 100 10 V 4.5 V 60 40 4.3 V VGS = 4.1 V 20 Tc = 25°C Pulse Test Static Drain to Source On State Resistance RDS(on) (mΩ) 0 2 4 6 8 10 Drain Current ID (A) 10 80 Tc = 175°C 1 25°C 0.1 −40°C 0.01 0.001 VDS = 10 V Pulse Test 0.0001 0 1 2 3 4 5 6 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current 50 40 Tc = 175°C 30 20 25°C −40°C 10 ID = 40 A Pulse Test 0 0 4 8 12 16 Gate to Source Voltage VGS (V) R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 20 Static Drain to Source On State Resistance RDS(on) (mΩ) Drain Current ID (A) 4.7 V 100 Tc = 25°C VGS = 10 V Pulse Test 10 1 1 10 100 Drain Current ID (A) Page 3 of 6 Preliminary Typical Capacitance vs. Drain to Source Voltage Static Drain to Source On State Resistance vs. Temperature 50 10000 Pulse Test VGS = 10 V 40 ID = 40 A Capacitance C (pF) Ciss 30 20 10 0 50 100 150 100 Tc = 25°C VGS = 0 f = 1 MHz 5 10 15 20 25 30 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 20 Tc = 25°C ID = 80 A VGS VDD = 50 V 25 V 10 V VDS 16 12 40 8 20 0 Crss Case Temperature Tc (°C) 80 60 Coss 0 200 4 VDD = 50 V 25 V 10 V 20 40 60 80 0 100 Gate Charge Qg (nC) 100 Reverse Drain Current IDR (A) 100 1000 10 0 −50 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Static Drain to Source On State Resistance RDS(on) (mΩ) RJK1209JPE Tc = 25°C Pulse Test 80 60 40 10 V VGS = 0, −5 V 20 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Repetitive Avalanche Energy EAR (mJ) Avalanche Energy vs. Channel Temperature Derating 200 IAP = 45 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω 160 120 80 40 0 25 50 75 100 125 150 175 Channel Temperature Tch (°C) R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Page 4 of 6 Preliminary Normalized Transient Thermal Impedance γs (t) RJK1209JPE Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 θch – c(t) = γs (t) • θch – c θch – c = 1.00°C/W, Tc = 25°C lse 0.01 0.01 u tp ho 1s PDM D= PW T PW T 0.001 10 μ 100 μ 1m 10 m 1 100 m 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform L VDS Monitor 1 EAR = L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V (BR)DSS Rg IAP VDD D. U. T VDS Vin 15 V ID 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 30 V 90% td(on) R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 10% tr 90% td(off) tf Page 5 of 6 RJK1209JPE Preliminary Package Dimensions JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 –+ 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 –+ 0.5 1.3 ± 0.2 Ordering Information Orderable Part Number RJK1209JPE-00-J3 Note: Quantity 1000 pcs Shipping Container Taping (Sinistrorse) The symbol of 2nd "-" is occasionally presented as "#". R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Page 6 of 6 Notice 1. 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