RENESAS RJK1209JPE

Preliminary Datasheet
RJK1209JPE
120V - 80A - N Channel Power MOS FET
High Speed Power Switching
R07DS0691EJ0100
Rev.1.00
Mar 08, 2012
Features
•
•
•
•
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 14 mΩ typ.
Low input capacitance: Ciss = 4600 pF typ
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
2, 4
D
4
1
2
1.
2.
3.
4.
1G
3
Gate
Drain
Source
Drain
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Strage temperature
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAP Note2
EAR Note2
Value
120
±20
80
320
80
45
173
Unit
V
V
A
A
A
A
mJ
Pch Note3
Tch Note4
Tstg
150
175
W
°C
°C
–55 to +150
Notes: 1. PW ≤ 10μs duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 1.0°C/W
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
Page 1 of 6
RJK1209JPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
Symbol
IGSS
IDSS
VGS(off)
RDS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
—
—
2.4
—
Typ
—
—
—
14
Max
±10
10
3.6
19
Unit
μA
μA
V
mΩ
—
—
—
—
—
—
—
—
—
—
—
—
4600
570
190
65
18
12
30
13
75
8
0.96
100
—
—
—
—
—
—
—
—
—
—
1.25
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
VGS = ±20 V, VDS = 0
VDS = 120 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 40 A, VGS = 10 V Note5
VDS = 10V, VGS = 0,
f = 1 MHz
VDD = 50 V, VGS = 10 V,
ID = 80 A
ID = 40 A, RL = 0.75 Ω,
VGS = 10 V, RG = 4.7 Ω
IF = 80 A, VGS = 0 Note5
IF = 80 A, VGS = 0
diF/dt = 100 A/μs
5. Pulse test
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
Page 2 of 6
RJK1209JPE
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
μs
10
Op
er
at
0.1
s
Operation
in this area
is limited RDS(on)
m
1
DC
ion
Drain Current ID (A)
μs
0
=
Channel Dissipation
10
10
PW
50
s
100
m
150
100
10
200
1
Pch (W)
250
0.01
Tc = 25°C
1 shot Pulse
0
50
100
150
Case Temperature
0.001
0.1
200
Tc (°C)
10
100
1000
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100
1
Typical Transfer Characteristics
100
10 V
4.5 V
60
40
4.3 V
VGS = 4.1 V
20
Tc = 25°C
Pulse Test
Static Drain to Source On State Resistance
RDS(on) (mΩ)
0
2
4
6
8
10
Drain Current ID (A)
10
80
Tc = 175°C
1
25°C
0.1
−40°C
0.01
0.001
VDS = 10 V
Pulse Test
0.0001
0
1
2
3
4
5
6
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
50
40
Tc = 175°C
30
20
25°C
−40°C
10
ID = 40 A
Pulse Test
0
0
4
8
12
16
Gate to Source Voltage VGS (V)
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
20
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Drain Current ID (A)
4.7 V
100
Tc = 25°C
VGS = 10 V
Pulse Test
10
1
1
10
100
Drain Current ID (A)
Page 3 of 6
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
vs. Temperature
50
10000
Pulse Test
VGS = 10 V
40 ID = 40 A
Capacitance C (pF)
Ciss
30
20
10
0
50
100
150
100
Tc = 25°C
VGS = 0
f = 1 MHz
5
10
15
20
25
30
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
20
Tc = 25°C
ID = 80 A
VGS
VDD = 50 V
25 V
10 V
VDS
16
12
40
8
20
0
Crss
Case Temperature Tc (°C)
80
60
Coss
0
200
4
VDD = 50 V
25 V
10 V
20
40
60
80
0
100
Gate Charge Qg (nC)
100
Reverse Drain Current IDR (A)
100
1000
10
0
−50
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
RJK1209JPE
Tc = 25°C
Pulse Test
80
60
40
10 V
VGS = 0, −5 V
20
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Repetitive Avalanche Energy EAR (mJ)
Avalanche Energy vs.
Channel Temperature Derating
200
IAP = 45 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
160
120
80
40
0
25
50
75
100
125
150
175
Channel Temperature Tch (°C)
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
Page 4 of 6
Preliminary
Normalized Transient Thermal Impedance γs (t)
RJK1209JPE
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
θch – c(t) = γs (t) • θch – c
θch – c = 1.00°C/W, Tc = 25°C
lse
0.01
0.01
u
tp
ho
1s
PDM
D=
PW
T
PW
T
0.001
10 μ
100 μ
1m
10 m
1
100 m
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
L
VDS
Monitor
1
EAR =
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V (BR)DSS
Rg
IAP
VDD
D. U. T
VDS
Vin
15 V
ID
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 30 V
90%
td(on)
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
10%
tr
90%
td(off)
tf
Page 5 of 6
RJK1209JPE
Preliminary
Package Dimensions
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
1.30g
7.8
6.6
(1.5)
10.0
2.49 ± 0.2
0.2
0.1 –+ 0.1
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(1)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 –+ 0.5
1.3 ± 0.2
Ordering Information
Orderable Part Number
RJK1209JPE-00-J3
Note:
Quantity
1000 pcs
Shipping Container
Taping (Sinistrorse)
The symbol of 2nd "-" is occasionally presented as "#".
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
Page 6 of 6
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
Colophon 2.2