RENESAS RJK0855DPB-00-J5

Preliminary Datasheet
RJK0855DPB
80V, 30A, 11 m max.
Silicon N Channel Power MOS FET
Power Switching
R07DS1056EJ0200
(Previous: REJ03G1884-0100)
Rev.2.00
Apr 11, 2013
Features
 High speed switching
 Low drive current
 Low on-resistance
RDS(on) = 8.2 m typ. (at VGS = 10 V)
 Pb-free
 Halogen-free
 High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
1, 2, 3
4
5
4
G
3
12
4
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
Ratings
80
20
30
120
Unit
V
V
A
A
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-C
Tch
Tstg
30
30
12
60
2.08
150
–55 to +150
A
A
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at L=10uH, Tch = 25C, Rg  50 
3. Tc = 25C
R07DS1056EJ0200 Rev.2.00
Apr 11, 2013
Page 1 of 6
RJK0855DPB
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min
80
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
8.2
42
2550
500
130
0.5
35
11
6.5
14
6.4
34
8.0
Max
—
0.1
1
4.0
11
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
A
V
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
ns
Body–drain diode forward voltage
Body–drain diode reverse recovery time
VDF
trr
—
—
0.8
44
1.1
—
V
ns
Test Conditions
ID = 10 mA, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = 80 V, VGS = 0 V
VDS = 10 V, ID = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 30 A
VGS = 10 V, ID = 15 A,
VDD  30 V, RL = 2 ,
Rg = 4.7 
IF = 30 A, VGS = 0 V Note4
IF = 30 A, VGS = 0 V
diF/ dt = 100 A/ s
Notes: 4. Pulse test
R07DS1056EJ0200 Rev.2.00
Apr 11, 2013
Page 2 of 6
RJK0855DPB
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
Drain Current ID (A)
Channel Dissipation Pch (W)
80
60
40
20
0
50
100
150
100
10
1
s
1 Operation in
PW = 10 ms
this area is
limited by RDS(on)
0.1
DC Operation
0.01
0.1
200
m
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
50
Pulse Test
4.8 V
10 V
VDS = 10 V
Pulse Test
40
4.4 V
30
20
4.2 V
10
4.0 V
Drain Current ID (A)
4.6 V
Drain Current ID (A)
Tc = 25°C
1 shot Pulse
40
30
20
Tc = 75°C
25°C
10
–25°C
VGS = 3.8 V
Drain to Source Saturation Voltage
VDS (on) (mV)
0
2
4
6
8
10
0
1
2
3
5
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
400
100
Pulse Test
Pulse Test
320
240
10
VGS = 10 V
ID = 20 A
160
10 A
80
5A
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
R07DS1056EJ0200 Rev.2.00
Apr 11, 2013
1
1
10
100
1000
Drain Current ID (A)
Page 3 of 6
RJK0855DPB
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
25
Typical Capacitance vs.
Drain to Source Voltage
10000
Pulse Test
ID = 15 A
Capacitance C (pF)
20
15
VGS = 10 V
10
5
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
25
50
75
40
60
80
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
20
80
16
VGS
VDD = 50 V
25 V
10 V
VDS
12
40
8
VDD = 50 V
25 V
10 V
20
4
0
0
20
Case Temperature Tc ( °C)
ID = 30 A
60
0
100 125 150
10
20
30
0
50
40
50
Reverse Drain Current IDR (A)
100
10
0
Gate to Source Voltage V GS (V)
Drain to Source Voltage V DS (V)
0
–25
Pulse Test
10 V
40
30
20
VGS = 0 V
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V SD (V)
Gate Charge Qg (nC)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Energy EAS (mJ)
15
12
9
6
3
0
25
50
75
100
125
150
Channel Temperature Tch ( °C)
R07DS1056EJ0200 Rev.2.00
Apr 11, 2013
Page 4 of 6
RJK0855DPB
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
.02
0
D=
PDM
se
ul
p
1
0.0 hot
s
1
PW
T
PW
T
0.01
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
EAS =
L
VDS
Monitor
1
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 30 V
90%
td(on)
R07DS1056EJ0200 Rev.2.00
Apr 11, 2013
10%
tr
90%
td(off)
tf
Page 5 of 6
RJK0855DPB
Preliminary
Package Dimensions
JEITA Package Code
SC-100
Previous Code
LFPAKV
RENESAS Code
PTZZ0005DA-A
4.9
5.3 Max
4.0 ± 0.2
MASS[Typ.]
0.080g
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
+0.05
0.20 –0.03
0° – 8°
+0.25
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
Unit: mm
0.6 –0.20
1.3 Max
Package Name
LFPAK
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part No.
RJK0855DPB-00-J5
Quantity
2500 pcs
R07DS1056EJ0200 Rev.2.00
Apr 11, 2013
Shipping Container
Taping
Page 6 of 6
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