RENESAS RJF0608JSP-00-J0

Target Specifications Datasheet
RJF0608JSP
R07DS0872EJ0100
Rev.1.00
Aug 29, 2012
60 V - 5 A - N Channel MOS FET
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features








Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
High density mounting
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
D D D D
8
5
76
1
4
23
G
Gate resistor
Temperature
Sensing
Circuit
Latch
Circuit
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
Current
Limitation
Circuit
Gate
Shut-down
Circuit
S S S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
Gate to source voltage
VGSS
–2.5
Drain current
ID Note3
5
Body-drain diode reverse drain current
IDR
5
Avalanche current
IAP Note 2
2.6
Note 2
Avalanche energy
EAR
28.9
Note 1
Channel dissipation
Pch
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
2. Tch = 25C, Rg  50 
3. It provides by the current limitation lower bound value.
R07DS0872EJ0100 Rev.1.00
Aug 29, 2012
Unit
V
V
V
A
A
A
mJ
W
C
C
Page 1 of 7
RJF0608JSP
Target Specifications
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Symbol
VIH
VIL
IIH1
IIH2
IIL
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Note:
IIH(sd)1
IIH(sd)2
Tsd
Vop
ID limt
Min
3.5
—
—
—
—
—
—
—
3.5
5
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
Test Conditions
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
VGS = 5 V, VDS = 10 V Note 4
4. Pulse test
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
Min
Typ
Max
Unit
ID1
ID2
ID3
—
—
5
60
—
—
—
—
17
10
—
—
A
mA
A
V
VGS = 3.5 V, VDS = 10 V Note 5
VGS = 1.2 V, VDS = 10 V
VGS = 5 V, VDS = 10 V Note 5
ID = 10 mA, VGS = 0
16
–2.5
—
—
—
—
—
—
—
1.1
4
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
9
58
42
280
—
—
100
50
1
–100
—
—
10
2.1
—
100
75
—
V
V
A
A
A
A
mA
mA
A
V
S
m
m
pF
IG = 800 A, VDS = 0
IG = –100 A, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 32 V, VGS = 0, Ta = 125C
VDS = 10 V, ID = 1 mA
ID = 2.5 A, VDS = 10 V Note 5
ID = 2.5 A, VGS = 4 V Note 5
ID = 2.5 A, VGS = 10 V Note 5
VDS = 10 V, VGS = 0, f = 1MHz
1.6
4.7
3.7
4.4
0.81
—
—
—
—
—
s
s
s
s
V
VGS = 10 V, ID= 2.5 A, RL = 12 
IF = 5 A, VGS = 0
diF/dt = 50 A/s
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
VGS(off)
|yfs|
RDS(on)
Output capacitance
RDS(on)
Coss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
Body-drain diode forward
voltage
VDF
—
—
—
—
—
Body-drain diode reverse
recovery time
trr
—
67
—
ns
tos1
—
—
4
1.5
—
—
ms
ms
Over load shut down
Note 6
operation time
tos2
Test Conditions
IF = 5 A, VGS = 0
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
R07DS0872EJ0100 Rev.1.00
Aug 29, 2012
Page 2 of 7
RJF0608JSP
Target Specifications
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
(A)
3
2
1
0
50
100
150
10
1
PW
D
1
0.1
m
s
tio
n
(P
1
W N
≤1 ote
0s 7
)
10
100
Typical Transfer Characteristics
5
Pulse Test
VDS = 10 V
Pulse Test
5V
4V
10
VGS = 3 V
Drain Current ID (A)
8V
7V
4
3
2
150°C
1
25°C
Tc = –40°C
0
0
2
4
6
8
10
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source State Resistance
vs. Drain Current
Pulse Test
200
ID = 2.5 A
100
1.0 A
0.5 A
0
2
4
6
8
Gate to Source Voltage VGS (V)
R07DS0872EJ0100 Rev.1.00
Aug 29, 2012
10
Drain Source On Sate Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS (V)
300
0
ra
10
Typical Output Characteristics
10 V
0
pe
s
=
Drain Source Voltage VDS (V)
Note 7: When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
9V
Drain Current ID (A)
O
Operation in this area
is limited by RDS(on)
0.1
0.01
0.01
200
C
m
Ambient temperature Ta (°C)
20
Drain to Source Saturation Voltage
VDS(on) (mV)
Thermal shut down
operation area
Ta = 25°C
Drain Current ID
Channel Dissipation Pch (W)
4
500
Pulse Test
200
100
VGS = 4 V
50
10 V
20
10
0.1
0.2
0.5
1
2
5
10
Drain Current ID (A)
Page 3 of 7
Target Specifications
Static Drain to Source on State Resistance
vs. Temperature
120
Pulse Test
100
ID = 2 A, 0.5 A, 1 A
80
VGS = 4 V
60
40
ID = 2 A, 0.5 A, 1 A
10 V
20
0
–50 –25
0
25
50
75 100 125 150
Case Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
RJF0608JSP
100
VDS = 10 V
Pulse Test
10
Tc = –40°C
1
25°C
150°C
0.1
0.1
Switching Characteristics
100
1000
VGS = 10 V, VDD = 30 V
PW = 300 μs, duty ≤ 1 %
Switching Time t (μs)
Reverse Recovery Time trr (ns)
10
Drain Current ID (A)
Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
10
td(off)
10
tr
tf
1 td(on)
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
1
0.1
1
10
Reverse Drain Current
0.1
0.1
100
IDR (A)
4
3000
Capacitance C (pF)
10000
VGS = 5 V
0V
2
0.5
1
2
5
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
5
3
0.2
Drain Current
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
1
1
1000
Coss
300
100
30
VGS = 0
f = 1 MHz
Pulse Test
0
10
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage VSD (V)
R07DS0872EJ0100 Rev.1.00
Aug 29, 2012
0
10
20
30
40
50
60
Drain to Source Voltage VDS (V)
Page 4 of 7
RJF0608JSP
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
VDD = 16 V
8
6
24 V
4
2
0
100 μ
1m
100 m
10 m
Shutdown Time of Load-Short Test
Pw (S)
200
180
160
140
120
ID = 0.5 A
100
0
2
4
6
8
10
VGS (V)
Gate to Source Voltage
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
θch − f(t) = γs (t) • θch − f
θch − f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
e
ot
1sh
ls
pu
D=
PW
T
PW
T
0.0001
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
R07DS0872EJ0100 Rev.1.00
Aug 29, 2012
Page 5 of 7
RJF0608JSP
Target Specifications
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
10 V
50 Ω
10%
VDD
= 30 V
90%
td(on)
Avalanche Test Circuit
VDS
Monitor
10%
tr
90%
td(off)
tf
Avalanche Waveform
L
EAR =
1
2
L • IAP2 •
V(BR)DSS
V(BR)DSS – VDD
IAP
Monitor
V(BR)DSS
Rg
Vin
10 V
D. U. T
IAP
VDD
ID
50 Ω
0
R07DS0872EJ0100 Rev.1.00
Aug 29, 2012
VDS
VDD
Page 6 of 7
RJF0608JSP
Target Specifications
Package Dimensions
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
F
Package Name
SOP-8
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
* 3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
D
E
A2
A1
A
bp
b1
c
c1
A1
A
L1
L
y
HE
e
x
y
Z
L
L1
Detail F
Dimension in Millimeters
Min
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
0°
8°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
Ordering Information
Orderable Part Number
RJF0608JSP-00-J0
Note:
Quantity
2500 pcs
Shipping Container
Taping
The symbol of 2nd "-" is occasionally presented as "#".
R07DS0872EJ0100 Rev.1.00
Aug 29, 2012
Page 7 of 7
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Colophon 2.2