Target Specifications Datasheet RJF0608JSP R07DS0872EJ0100 Rev.1.00 Aug 29, 2012 60 V - 5 A - N Channel MOS FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features Logic level operation (4 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. High density mounting Power supply voltage applies 12 V and 24 V. AEC-Q101 Compliant Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) D D D D 8 5 76 1 4 23 G Gate resistor Temperature Sensing Circuit Latch Circuit 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Current Limitation Circuit Gate Shut-down Circuit S S S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage VDSS 60 Gate to source voltage VGSS 16 Gate to source voltage VGSS –2.5 Drain current ID Note3 5 Body-drain diode reverse drain current IDR 5 Avalanche current IAP Note 2 2.6 Note 2 Avalanche energy EAR 28.9 Note 1 Channel dissipation Pch 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 2. Tch = 25C, Rg 50 3. It provides by the current limitation lower bound value. R07DS0872EJ0100 Rev.1.00 Aug 29, 2012 Unit V V V A A A mJ W C C Page 1 of 7 RJF0608JSP Target Specifications Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Symbol VIH VIL IIH1 IIH2 IIL Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Note: IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min 3.5 — — — — — — — 3.5 5 Typ — — — — — 0.8 0.35 175 — — Max — 1.2 100 50 1 — — — 12 — Unit V V A A A mA mA C V A Test Conditions Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature VGS = 5 V, VDS = 10 V Note 4 4. Pulse test Electrical Characteristics (Ta = 25°C) Item Drain current Symbol Min Typ Max Unit ID1 ID2 ID3 — — 5 60 — — — — 17 10 — — A mA A V VGS = 3.5 V, VDS = 10 V Note 5 VGS = 1.2 V, VDS = 10 V VGS = 5 V, VDS = 10 V Note 5 ID = 10 mA, VGS = 0 16 –2.5 — — — — — — — 1.1 4 — — — — — — — — — 0.8 0.35 — — 9 58 42 280 — — 100 50 1 –100 — — 10 2.1 — 100 75 — V V A A A A mA mA A V S m m pF IG = 800 A, VDS = 0 IG = –100 A, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 32 V, VGS = 0, Ta = 125C VDS = 10 V, ID = 1 mA ID = 2.5 A, VDS = 10 V Note 5 ID = 2.5 A, VGS = 4 V Note 5 ID = 2.5 A, VGS = 10 V Note 5 VDS = 10 V, VGS = 0, f = 1MHz 1.6 4.7 3.7 4.4 0.81 — — — — — s s s s V VGS = 10 V, ID= 2.5 A, RL = 12 IF = 5 A, VGS = 0 diF/dt = 50 A/s VGS = 5 V, VDD = 16 V VGS = 5 V, VDD = 24 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS VGS(off) |yfs| RDS(on) Output capacitance RDS(on) Coss Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Body-drain diode forward voltage VDF — — — — — Body-drain diode reverse recovery time trr — 67 — ns tos1 — — 4 1.5 — — ms ms Over load shut down Note 6 operation time tos2 Test Conditions IF = 5 A, VGS = 0 Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. R07DS0872EJ0100 Rev.1.00 Aug 29, 2012 Page 2 of 7 RJF0608JSP Target Specifications Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), (PW ≤ 10s) (A) 3 2 1 0 50 100 150 10 1 PW D 1 0.1 m s tio n (P 1 W N ≤1 ote 0s 7 ) 10 100 Typical Transfer Characteristics 5 Pulse Test VDS = 10 V Pulse Test 5V 4V 10 VGS = 3 V Drain Current ID (A) 8V 7V 4 3 2 150°C 1 25°C Tc = –40°C 0 0 2 4 6 8 10 0 1 2 3 4 5 Gate to Source Voltage VGS (V) Drain to Saturation Voltage vs. Gate to Source Voltage Static Drain to Source State Resistance vs. Drain Current Pulse Test 200 ID = 2.5 A 100 1.0 A 0.5 A 0 2 4 6 8 Gate to Source Voltage VGS (V) R07DS0872EJ0100 Rev.1.00 Aug 29, 2012 10 Drain Source On Sate Resistance RDS(on) (mΩ) Drain to Source Voltage VDS (V) 300 0 ra 10 Typical Output Characteristics 10 V 0 pe s = Drain Source Voltage VDS (V) Note 7: When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm) 9V Drain Current ID (A) O Operation in this area is limited by RDS(on) 0.1 0.01 0.01 200 C m Ambient temperature Ta (°C) 20 Drain to Source Saturation Voltage VDS(on) (mV) Thermal shut down operation area Ta = 25°C Drain Current ID Channel Dissipation Pch (W) 4 500 Pulse Test 200 100 VGS = 4 V 50 10 V 20 10 0.1 0.2 0.5 1 2 5 10 Drain Current ID (A) Page 3 of 7 Target Specifications Static Drain to Source on State Resistance vs. Temperature 120 Pulse Test 100 ID = 2 A, 0.5 A, 1 A 80 VGS = 4 V 60 40 ID = 2 A, 0.5 A, 1 A 10 V 20 0 –50 –25 0 25 50 75 100 125 150 Case Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) RJF0608JSP 100 VDS = 10 V Pulse Test 10 Tc = –40°C 1 25°C 150°C 0.1 0.1 Switching Characteristics 100 1000 VGS = 10 V, VDD = 30 V PW = 300 μs, duty ≤ 1 % Switching Time t (μs) Reverse Recovery Time trr (ns) 10 Drain Current ID (A) Tc (°C) Body-Drain Diode Reverse Recovery Time 100 10 td(off) 10 tr tf 1 td(on) di / dt = 50 A / μs VGS = 0, Ta = 25°C 1 0.1 1 10 Reverse Drain Current 0.1 0.1 100 IDR (A) 4 3000 Capacitance C (pF) 10000 VGS = 5 V 0V 2 0.5 1 2 5 ID (A) Typical Capacitance vs. Drain to Source Voltage 5 3 0.2 Drain Current Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 1 1 1000 Coss 300 100 30 VGS = 0 f = 1 MHz Pulse Test 0 10 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) R07DS0872EJ0100 Rev.1.00 Aug 29, 2012 0 10 20 30 40 50 60 Drain to Source Voltage VDS (V) Page 4 of 7 RJF0608JSP Target Specifications Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 16 14 12 10 VDD = 16 V 8 6 24 V 4 2 0 100 μ 1m 100 m 10 m Shutdown Time of Load-Short Test Pw (S) 200 180 160 140 120 ID = 0.5 A 100 0 2 4 6 8 10 VGS (V) Gate to Source Voltage Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 D=1 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 θch − f(t) = γs (t) • θch − f θch − f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) PDM e ot 1sh ls pu D= PW T PW T 0.0001 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) R07DS0872EJ0100 Rev.1.00 Aug 29, 2012 Page 5 of 7 RJF0608JSP Target Specifications Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 Ω 10% VDD = 30 V 90% td(on) Avalanche Test Circuit VDS Monitor 10% tr 90% td(off) tf Avalanche Waveform L EAR = 1 2 L • IAP2 • V(BR)DSS V(BR)DSS – VDD IAP Monitor V(BR)DSS Rg Vin 10 V D. U. T IAP VDD ID 50 Ω 0 R07DS0872EJ0100 Rev.1.00 Aug 29, 2012 VDS VDD Page 6 of 7 RJF0608JSP Target Specifications Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol D E A2 A1 A bp b1 c c1 A1 A L1 L y HE e x y Z L L1 Detail F Dimension in Millimeters Min Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Orderable Part Number RJF0608JSP-00-J0 Note: Quantity 2500 pcs Shipping Container Taping The symbol of 2nd "-" is occasionally presented as "#". R07DS0872EJ0100 Rev.1.00 Aug 29, 2012 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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