Preliminary Datasheet RJK0652DPB 60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Features Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V) Pb-free Halogen-free High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 1, 2, 3 4 5 4 G 3 12 4 Source Gate Drain S S S 1 2 3 Application Switching Mode Power Supply Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Note 2 IAP EAS Note 2 Pch Note3 ch-C Tch Tstg Ratings 60 20 35 140 Unit V V A A 35 17.5 23 55 2.27 150 –55 to +150 A A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (VGS(off)) which characteristics has been improved. R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Page 1 of 6 RJK0652DPB Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 — — 1.2 — — — — — — — — — — — — — Typ — — — — 5.5 6.5 54 4100 485 200 0.4 29 13 8.8 11 7.0 54 Max — 0.1 1 2.5 7.0 9.0 — — — — — — — — — — — Unit V A A V m m S pF pF pF nC nC nC ns ns ns — — — 10 0.83 35 — 1.1 — ns V ns Test Conditions ID = 10 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 60 V, VGS = 0 V VDS = 10 V, ID = 1 mA ID = 17.5 A, VGS = 10 V Note4 ID = 17.5 A, VGS = 4.5 V Note4 ID = 17.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 25 V, VGS = 4.5 V, ID = 35 A VGS = 10 V, ID = 17.5 A, VDD 30 V, RL = 1.71 , Rg = 4.7 IF = 35 A, VGS = 0 V Note4 IF = 35 A, VGS = 0 V diF/ dt = 100 A/ s Notes: 4. Pulse test R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Page 2 of 6 RJK0652DPB Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating Drain Current ID (A) 1000 60 40 20 0 50 100 150 Tc = 25°C 1 shot Pulse 1m s 10 PW = 10 ms 1 Operation in this area is limited by RDS(on) 0.1 DC Operation 0.01 0.1 200 10 100 Typical Transfer Characteristics Typical Output Characteristics 50 50 3.0 V VDS = 10 V Pulse Test 2.8 V 4.5 V, 10 V Pulse Test 30 2.6 V 20 10 Drain Current ID (A) Drain Current ID (A) 1 Drain to Source Voltage VDS (V) Case Temperature Tc (°C) 40 10 μs 100 s 0μ 10 Channel Dissipation Pch (W) 80 VGS = 2.4 V 40 30 20 Tc = 75°C 10 25°C –25°C 2 4 6 8 0 10 1 2 3 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 400 300 200 ID = 20 A 100 0 5A 4 8 12 10 A 16 20 Gate to Source Voltage VGS (V) R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (mV) 0 10 Pulse Test 1 VGS = 4.5 V 10 V 0.1 0.1 1 10 100 1000 Drain Current ID (A) Page 3 of 6 Preliminary Static Drain to Source on State Resistance vs. Temperature 20 Typical Capacitance vs. Drain to Source Voltage 10000 Pulse Test Pulse Test ID = 17.5 A Ciss Capacitance C (pF) 16 12 VGS = 4.5 V 8 10 V 4 100 25 50 75 Crss 100 VGS = 0 f = 1 MHz 10 20 30 40 50 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 20 VGS 16 80 VDD = 50 V 25 V 10 V VDS 12 40 8 VDD = 50 V 25 V 10 V 20 4 0 0 Coss 0 100 125 150 ID = 35 A 60 1000 10 0 20 40 60 80 0 100 Gate Charge Qg (nC) 50 Reverse Drain Current IDR (A) 0 –25 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance RDS (on) (mΩ) RJK0652DPB Pulse Test 10 V 40 5V 30 20 10 0 VGS = 0 V 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Avalanche Energy EAS (mJ) 25 IAP = 17.5 A VDD = 20 V duty < 0.1 % Rg ≥ 50 Ω 20 15 10 5 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Page 4 of 6 RJK0652DPB Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 2.27°C/W, Tc = 25°C 0.1 0.05 .02 0 0.03 se ul p 1 0.0 hot s 1 0.01 10 μ D= PDM PW T PW T 100 μ 1m 100 m 10 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAS = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 30 V 90% td(on) R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 10% tr 90% td(off) tf Page 5 of 6 RJK0652DPB Preliminary Package Dimensions JEITA Package Code SC-100 Previous Code LFPAKV RENESAS Code PTZZ0005DA-A 4.9 5.3 Max 4.0 ± 0.2 MASS[Typ.] 0.080g +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 +0.05 0.20 –0.03 0° – 8° +0.25 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 Unit: mm 0.6 –0.20 1.3 Max Package Name LFPAK 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part No. RJK0652DPB-00-J5 Quantity 2500 pcs R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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