HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134-0700 (Previous: ADE-208-353D) Rev.7.00 Apr 27, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 4 G 1 2 Gate resistor Temperature Sensing Circuit Latch Circuit 1. Gate 2. Drain 3. Source 4. Drain Gate Shutdown Circuit 3 S Rev.7.00 Apr 27, 2006 page 1 of 8 HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS VGSS ID Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Value 60 16 –2.8 20 40 20 50 150 –55 to +150 ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Unit V V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Rev.7.00 Apr 27, 2006 page 2 of 8 Symbol VIH VIL Min 3.5 — Typ — — Max — 1.2 Unit V V Test Conditions IIH1 IIH2 IIL — — — — — — 3.5 — — — 0.8 0.35 175 — 100 50 1 — — — 13 µA µA µA mA mA °C V Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature IIH (sd) 1 IIH (sd) 2 Tsd VOP HAF2001 Electrical Characteristics (Ta = 25°C) Item Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss Min 10 — 60 16 –2.8 — — — — — — — 1.0 — — 6 — Typ — — — — — — — — — 0.8 0.35 — — 50 30 12 630 Max — 10 — — — 100 50 1 –100 — — 250 2.25 65 43 — — Unit A mA V V V µA µA µA µA mA mA µA V mΩ mΩ S pF Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time td (on) tr td (off) tf VDF trr — — — — — — 7.5 29 34 26 1.0 110 — — — — — — µs µs µs µs V ns Over load shut down operation time Note4 tos1 tos2 — — 1.8 0.7 — — ms ms Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 4 V Note 3 ID = 10 A, VGS = 10 V Note 3 ID = 10 A, VDS = 10 V Note 3 VDS = 10 V, VGS = 0 f = 1 MHz ID = 5 A VGS = 5 V RL = 6 Ω IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 12 V VGS = 5 V, VDD = 24 V Notes: 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. Rev.7.00 Apr 27, 2006 page 3 of 8 HAF2001 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 60 40 20 0 0 50 100 150 Case Temperature ID (A) Thermal shut down 200 Operation area 100 Drain Current Channel Dissipation Pch (W) 80 20 20 µs 50 10 DC 10 5 er Tc (°C) m s (T c= 25 10 °C ) 50 100 20 VDS (V) ID (A) VDS = 10 V Pulse Test 3.5 V 20 VGS = 3 V 10 0 0 2 4 6 Drain to Source Voltage 8 1.6 ID = 20 A 0.4 10 A 5A 0 2 4 6 Gate to Source Voltage Rev.7.00 Apr 27, 2006 page 4 of 8 8 10 VGS (V) 0 1 2 3 4 Gate to Source Voltage 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Pulse Test 75°C 10 VDS (V) 0.8 Tc = –25°C 25°C 20 0 10 Drain to Source Saturation Voltage vs. Gate to Source Voltage 0 40 30 4V Drain Current ID (A) 30 Drain Current s Typical Transfer Characteristics 5V VDS (on) (V) 5 µs 10 Drain to Source Voltage Pulse Test 10 V 8V 6V 40 Drain to Source Voltage ion m 0 50 50 1.2 = at 2 Operation in this area is limited by RDS (on) 1 Typical Output Characteristics 2.0 Op 0.5 Ta = 25°C 0.3 0.3 0.5 1 2 200 PW 1 0.5 Pulse Test 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 1 2 5 10 20 Drain Current 50 100 200 ID (A) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test ID = 20 A 0.08 VGS = 4 V 0.06 10 A 5A 0.04 ID = 20 A 5 A, 10 A 0.02 10 V 0 –40 0 40 80 Case Temperature 120 160 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAF2001 100 VDS = 10 V Pulse Test 50 20 Tc = –25°C 10 25°C 5 75°C 2 1 0.5 Tc (°C) 500 50 Switching Time t (ns) Reverse Recovery Time trr (ns) 100 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 1 2 5 10 Reverse Drain Current 20 10 20 50 td(off) tf 20 tr td(on) 10 5 2 1 0.1 0.2 50 IDR (A) VGS = 5 V, VDD = 30 V PW = 300 µs, duty ≤ 1 % 0.5 1 2 5 Drain Current 10 20 50 ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 50 10000 Pulse Test 40 Capacitance C (pF) Reverse Drain Current IDR (A) 5 Switching Characteristics 1000 10 0.5 2 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 20 1 30 VGS = 5 V 20 0V 10 3000 1000 Coss 300 100 30 0 VGS = 0 f = 1 MHz 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Rev.7.00 Apr 27, 2006 page 5 of 8 0 10 20 30 40 50 Drain to Source Voltage VDS (V) HAF2001 Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 10 VDD = 36 V 8 24 V 12 V 6 9V 4 2 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 ID = 5 A 180 160 140 120 100 0 Shutdown Time of Load-Short Test PW (ms) 2 4 6 Gate to Source Voltage 8 VGS (V) TTL Drive Characteristics 10 Input Voltage VI (V) 8 0.8 6 0.6 VI 0.4 4 II 2 0 0.01 0.03 0.2 Input Current II (mA) 1.0 ID = 5 A 0 0.1 0.3 1 3 10 Gate Series Resistance RG (kΩ) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c θch – c = 2.50°C/W, Tc = 25°C 0.1 0.1 0.05 0.03 0 1 0.0 h 1s D= PDM .02 p ot uls 0.01 10 µ e 100 µ 10 m 100 m Pulse Width PW (S) Rev.7.00 Apr 27, 2006 page 6 of 8 PW T PW T 1m 1 10 10 HAF2001 Test Circuit RL 5A ID 0 II + – Rg HD74LS08 VCC =5V D.U.T VI 0 VI II 0 Thermal shut down Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor Vin D.U.T. 10% RL Vout Vin 5V 50 Ω VDD = 30 V 10% 90% td(on) Rev.7.00 Apr 27, 2006 page 7 of 8 10% tr 90% td(off) tf HAF2001 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 +0.1 φ 3.6 –0.08 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 Ordering Information Part Name HAF2001-90 Quantity Max: 50 pcs/sack Shipping Container Sack Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.7.00 Apr 27, 2006 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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