RENESAS H5N1506P

H5N1506P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0389-0200
Rev.2.00
Jul 03, 2006
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00 Jul 03, 2006 page 1 of 6
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
Note1
IDR (pulse)
Note3
IAP
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
150
±30
98
294
98
294
48
172
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
H5N1506P
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
150
—
—
3.0
36
—
Typ
—
—
—
—
60
0.014
Max
—
1
±0.1
4.5
—
0.016
Unit
V
µA
µA
V
S
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
4900
1000
120
60
380
220
250
100
24
45
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
—
—
1.0
150
1.5
—
V
ns
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Qrr
—
1.0
—
µC
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Rev.2.00 Jul 03, 2006 page 2 of 6
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
Test conditions
ID = 10 mA, VGS = 0
VDS = 150 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 47.5 A, VDS = 10 V Note4
ID = 47.5 A, VGS = 10 VNote4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 47.5 A
VGS = 10 V
RL = 1.58 Ω
Rg = 10 Ω
VDD = 120 V
VGS = 10 V
ID = 95 A
IF = 95 A, VGS = 0 Note4
IF = 95 A, VGS = 0
diF/dt = 100 A/µs
H5N1506P
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
Ta = 25°C
300
150
100
50
10 10
0
µs
1 m µs
s
100
Drain Current ID (A)
Channel Dissipation Pch (W)
200
30
10
PW = 10 ms
(1shot)
3
1
DC Operation
(Tc = 25°C)
0.3
0.1 Operation in this
area is limited by
0
100
50
100
150
0.03 RDS(on)
0.01
1
3
200
1000
Typical Output Characteristics
Typical Transfer Characteristics
100
10 V
VDS = 10 V
Pulse Test
7V
Drain Current ID (A)
6.5 V
60
40
5.5 V
20
VGS = 5 V
4
8
12
16
80
60
40
20
Tc = 75°C
0
20
2
25°C
−25°C
6
4
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
4
0.1
Pulse Test
3
2
ID = 95 A
1
47.5 A
20 A
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Rev.2.00 Jul 03, 2006 page 3 of 6
Drain to Source on State Resistance
RDS(on) (Ω)
Drain Current ID (A)
Drain to Source Saturation Voltage
VDS(on) (V)
300
Drain to Source Voltage VDS (V)
6V
0
100
Case Temperature Tc (°C)
Pulse Test
80
30
10
VGS = 10 V
0.05
0.02
0.01
0.005
0.002
Pulse Test
0.001
1
3
10
30
100 300 1000
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
VGS = 10 V
Forward Transfer Admittance |yfs| (S)
0.05
Forward Transfer Admittance vs.
Drain Current
Pulse Test
0.04
47.5 A
ID = 95 A
0.03
0.02
20 A
0.01
0
−25
0
25
50
75
100 125 150
1000
300
Tc = −25°C
100
30
25°C
10
75°C
3
VDS = 10 V
Pulse Test
1
1
3
10
30
100
300
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
100000
500
30000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Static Drain to Source on State Resistance
RDS(on) (Ω)
H5N1506P
200
100
50
20
10
5
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
2
1000
VGS = 0
f = 1 MHz
10000
Ciss
3000
1000
Coss
300
100
Crss
30
1
3
10
30
100
300
150
Dynamic Input Characteristics
Switching Characteristics
16
ID = 95 A
VDD = 120 V
60 V
30 V
VGS
VDS
12
8
60
4
VDD = 120 V
60 V
30 V
0
0
100
Drain to Source Voltage VDS (V)
40
80
120
160
Gate Charge Qg (nC)
Rev.2.00 Jul 03, 2006 page 4 of 6
200
10000
Switching Time t (ns)
120
50
Reverse Drain Current IDR (A)
240
180
0
1000
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
1
1000
VGS = 10 V, VDD = 75 V
PW = 5 µs, duty ≤ 1 %
RG = 10 Ω
tf
tr
tf
td(off)
100
td(on)
tr
10
0.1
0.3
1
3
10
30
Drain Current ID (A)
100
H5N1506P
Gate to Source Cutoff Voltage VGS(off) (V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
100
80
60
10 V
40
5V
VGS = 0 V
20
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
1 mA
3
2
0.1 mA
1
0
–25
0
25
50
75
Case Temperature
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γs (t)
ID = 10 mA
4
100 125 150
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03 0.02
lse
1
0.0
0.01
10 µ
ot
D=
PW
T
PW
pu
T
h
1s
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
10 Ω
Vin
10 V
Vout
V DD
= 75 V
10%
90%
td(on)
Rev.2.00 Jul 03, 2006 page 5 of 6
10%
tr
90%
td(off)
tf
H5N1506P
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
H5N1506P-E
Quantity
360 pcs
Shipping Container
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Jul 03, 2006 page 6 of 6
Sales Strategic Planning Div.
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Colophon .6.0