Preliminary Datasheet RJH1CM5DPQ-E0 1200V - 15A - IGBT Application: Inverter R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 Features • Short circuit withstand time (10 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C) • Built-in fast recovery diode (trr = 200 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 125 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 15 A, Rg = 5 Ω, Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC IC(peak) Note1 IDF IDF(peak) Note1 PC Note2 θj-c Note2 θj-cd Note2 Tj Tstg Ratings 1200 ±30 30 15 45 15 45 245 0.51 0.69 150 –55 to +150 Unit V V A A A A A W °C/W °C/W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 Page 1 of 9 RJH1CM5DPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time FRD forward voltage FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current Symbol ICES /IR Min — Typ — Max 5 Unit μA IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon — 4.5 — — — — — — — — — — — — — — — 2.1 2.9 1150 70 30 74 10 40 40 18 100 125 1.6 ±1 6.5 2.7 — — — — — — — — — — — — μA V V V pF pF pF nC nC nC ns ns ns ns mJ Eoff Etotal tsc — — — 0.7 2.3 10 — — — mJ mJ μs VF trr Qrr Irr — — — — 1.6 200 0.8 9.5 — — — — V ns μC A Test Conditions VCE = 1200 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 15 A, VGE = 15 V Note3 IC = 30 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 15 A VCC = 600 V VGE = 15 V IC = 15 A Rg = 5 Ω Inductive load VCC ≤ 720 V, VGE = 15 V Tc ≤ 125°C IF = 15 A Note3 IF = 15 A diF/dt = 100 A/μs Notes: 3. Pulse test. R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 Page 2 of 9 RJH1CM5DPQ-E0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 40 250 Collector Current IC (A) Collector Dissipation Pc (W) 300 200 150 100 50 0 25 50 75 10 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 60 Collector Current IC (A) 1000 100 10 10 PW 0 µs = 10 µs 1 0.1 1 Tc = 25°C Single pulse 50 40 30 20 10 0 10 100 10000 1000 0 400 800 1200 1600 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 50 50 18 V 15 V Tc = 25°C Pulse Test Collector Current IC (A) Collector Current IC (A) 20 0 0 Collector Current IC (A) 30 40 12 V 30 20 10 V 10 18 V Tc = 150°C Pulse Test 40 15 V 30 12 V 20 10 V 10 VGE = 8 V VGE = 8 V 0 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 9 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 6 Tc = 25°C Pulse Test 5 4 3 IC = 30 A 15 A 2 7.5 A 1 6 8 10 12 14 16 18 20 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 6 Tc = 150°C Pulse Test 5 3 15 A 1 6 8 10 12 14 16 18 20 Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) Tc = 25°C 150°C 30 20 10 VCE = 10 V Pulse Test 0 0 4 8 12 16 20 5 VGE = 15 V Pulse Test 4 IC = 30 A 3 15 A 7.5 A 2 1 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) Frequency Characteristics (Typical) 10 20 8 IC = 10 mA 6 4 1 mA 2 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Case Temparature Tc (°C) R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 Collector Current IC(RMS) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 7.5 A 2 Gate to Emitter Voltage VGE (V) 40 0 −25 IC = 30 A 4 Gate to Emitter Voltage VGE (V) 50 Collector Current IC (A) Collector to Emitter Satularion Voltage VCE(sat) (V) Preliminary Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Satularion Voltage VCE(sat) (V) RJH1CM5DPQ-E0 16 0 Collector current wave (Square wave) 12 8 Tj = 125°C Tc = 90°C V = 400 V 4 VCE = 15 V GE Rg = 5 Ω duty = 50% 0 1 10 100 1000 Frequency f (kHz) Page 4 of 9 RJH1CM5DPQ-E0 Preliminary Switching Characteristics (Typical) (1) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 tf td(off) 100 td(on) tr 10 VCC = 600 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 1 Switching Characteristics (Typical) (2) 100 VCC = 600 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 Eon Eoff 1 0.1 10 100 1 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 tf td(off) td(on) tr 10 VCC = 600 V, VGE = 15 V IC = 15 A, Tc = 150°C 1 1 100 VCC = 600 V, VGE = 15 V IC = 15 A, Tc = 150°C 10 Eon 1 Eoff 0.1 10 100 1 Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 tf td(off) td(on) 1 25 tr VCC = 600 V, VGE = 15 V IC = 15 A, Rg = 5 Ω 50 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 10 10 Gate Resistance Rg (Ω) (Inductive load) Gate Resistance Rg (Ω) (Inductive load) 100 100 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) 100 10 150 100 VCC = 600 V, VGE = 15 V IC = 15 A, Rg = 5 Ω 10 Eon 1 Eoff 0.1 25 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 9 RJH1CM5DPQ-E0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes 10 Cres VGE = 0 V f = 1 MHz Tc = 25°C 1 0 50 100 150 200 250 300 16 800 VGE 600 12 400 8 200 VCE 0 0 Reverse Recovery Time vs. Diode Current Slope (Typical) Reverse Recovery Charge Qrr (µC) Reverse Recovery Time trr (ns) IF = 15 A 800 600 Tc = 150°C 200 25°C 0 40 80 120 160 60 80 0 100 3.0 IF = 15 A 2.5 2.0 Tc = 150°C 1.5 1.0 0.5 25°C 0 200 0 40 80 120 160 200 Diode Current Slope diF/dt (A/µs) Diode Current Slope diF/dt (A/µs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 30 50 IF = 15 A 25 Forward Current IF (A) Reverse Recovery Current Irr (A) 40 Reverse Recovery Charge vs. Diode Current Slope (Typical) 1000 0 20 Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 400 4 IC = 15 A VCC = 300 V Tc = 25°C Gate to Emitter Voltage VGE (V) Capacitance C (pF) 10000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 20 Tc = 150°C 15 10 25°C 5 0 40 Tc = 25°C 30 150°C 20 10 VCE = 0 V Pulse Test 0 0 40 80 120 160 200 Diode Current Slope diF/dt (A/µs) R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 0 1 2 3 4 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Normalized Transient Thermal Impedance γs (t) RJH1CM5DPQ-E0 Preliminary Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 0.51°C/W, Tc = 25°C 0.1 0.1 0.05 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m Pulse Width 1 100 10 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 θj – c(t) = γs (t) • θj – c θj – c = 0.69°C/W, Tc = 25°C 0.05 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Page 7 of 9 RJH1CM5DPQ-E0 Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% td(off) Diode Reverse Recovery Time Test Circuit tf 10% td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 0.5 Irr 0.9 Irr Page 8 of 9 RJH1CM5DPQ-E0 Preliminary Package Dimension JEITA Package Code ⎯ RENESAS Code PRSS0003ZE-A Previous Code ⎯ MASS[Typ.] 6.0g Unit: mm φ3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH1CM5DPQ-E0#T2 R07DS0520EJ0700 Rev.7.00 Jul 2, 2013 Quantity 450 pcs Shipping Container Tube Page 9 of 9 Notice 1. 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