CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 PN: CGH2112 0F Typical Performance Over 2.0-2.3GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.0 GHz 2.1 GHz 2.2 GHz 2.3 GHz Units Gain @ 43 dBm 14.0 15.0 15.0 14.5 dB ACLR @ 43 dBm -36.5 -36.0 -34.0 -33.5 dBc Drain Efficiency @ 43 dBm 33.5 34.5 36.5 40.0 % Note: Measured in the CGH21120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF. Features 1.8 - 2.3 GHz Operation • 15 dB Gain • -35 dBc ACLR at 20 W PAVE • 35 % Efficiency at 20 W PAVE • High Degree of DPD Correction Can be Applied 2015 Rev 3.1 – June • Subject to change without notice. www.cree.com/RF 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Symbol Rating Units Conditions VDSS 84 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Power Dissipation PDISS 56 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 30 mA 25˚C Maximum Drain Current1 IDMAX 12 A 25˚C Soldering Temperature2 TS 245 ˚C Screw Torque τ 80 in-oz RθJC 1.5 ˚C/W TC -40, +150 ˚C Thermal Resistance, Junction to Case3 Case Operating Temperature3 85˚C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH21120F at PDISS = 56 W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 28.8 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 0.5 A Saturated Drain Current2 IDS 23.2 28.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 28.8 mA DC Characteristics1 RF Characteristics (TC = 25˚C, F0 = 2.15 GHz unless otherwise noted) Saturated Output Power3,4,5 PSAT – 110 – W VDD = 28 V, IDQ = 0.5 A, η – 70 – % VDD = 28 V, IDQ = 0.5 A, POUT = PSAT GSS 13.5 15 – dB VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm ACLR – -35 -30 dBc VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm η 29 35 – % VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 0.5 A, POUT = 20 W CW Input Capacitance7 CGS – 66 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance7 CDS – 12 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 1.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Pulsed Drain Efficiency3,5 Modulated Gain6 WCDMA Linearity6 Modulated Drain Efficiency6 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 40 μS, Duty Cycle = 5 %. 4 PSAT is defined as IG = 10 mA peak. 5 Measured in CGH21120F-AMP. 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF. 7 Includes package and internal matching components. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Pulse Performance Typical Pulse Characteristics Output Power, Drain Efficiency, CGH21120F Typical Pulsed Transferand Gain vs Input Power measured in CGH21120F-AMP Amplifier Circuit. =40uS, 5% Duty Cycle Vds=28V, Ids=500mA, Frequency=2.15GHz VDS = 28 V, IDS = 0.5 A, Freq = 2.15 GHz, Pulse Width = 40 μS, Duty Cycle = 5 % 80 18 Gain 70 Output Power 16 Drain Efficiency Gain 50 15 Output Power 40 14 30 Gain (dB) 60 Output Power (dBm) Drain Efficiency (%) 17 13 Efficiency 20 12 10 11 0 10 0 5 10 15 20 25 30 35 40 Input Power (dBm) 52.0 78% 51.5 76% 51.0 74% 50.5 72% 50.0 70% Psat 49.5 Drain Efficiency (%) Saturated Output Power (dBm) Typical Pulsed Saturated Power vs Frequency CGH21120F Pulsed Psat vs. Frequency measured in CGH21120F-AMP Amplifier Circuit. T=40uS, Duty Cycle IGS Peak,5% Pulse Width = 40 μS, Duty Cycle = 5 % VDS = 28 V, IDS = 0.5 A, PSAT = 10 mA Vds=28V, Ids=500mA, Psat = 10mA Igs peak 68% Drain Efficiency 49.0 66% 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 Frequency (GHz) Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Linear Performance Typical Small Lossover vs Frequency CGH21120F SmallSignal Signal Gain Gain and and Return Return Loss Frequency measured in CGH21120F-AMP Amplifier Circuit. in Broadband Amplifier Circuit, CGH21120F-TB =28V, VVDS= 28 V,IDSI =500mA = 0.5 A Linear Gain (dB) DS 0 19 -2 18 -4 17 -6 16 -8 15 -10 14 -12 13 Return Loss (dB) DS 20 -14 Gain 12 -16 Return Loss 11 -18 10 -20 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 Frequency (GHz) Typical WCDMA Performance Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power measured in CGH21120F-AMP Amplifier Circuit. CGH21120F Typical WCDMA Transfer 3GPP Test Model 1, 641,DPCH 67 67% % Clipping, 8.81 dB PAR @ 0.01 % 3GPP Test Model 64 DPCH clipping, 8.81dB PAR @0.01% 35V = 2.15GHz VDS = 28 Vds=28V, V and 35 V, Ids=500mA, IDS = 0.5 A,Frequency Frequency = 2.15 GHz 45% -31 28V -ACLR 42% -32 28V +ACLR 39% -33 35V -ACLR 36% -34 35V +ACLR 33% -35 28V Eff 30% -36 35V Eff 27% -37 24% -38 21% -39 18% -40 15% -41 12% -42 9% -43 6% -44 3% -45 0% 25 30 35 40 Output Power (dBm) 45 Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 Drain Efficiency ACLR (dBc) -30 CGH21120F Rev 3.1 50 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WCDMA Digital Pre-Distortion (DPD) Performance WCDMA Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power measured in Transfer CGH21120F-AMP Amplifier Circuit. CGH21120F WCDMA with and without DPD correction SingleChannel Channel WCDMA 6.5dB with CFR Single WCDMA 6.5dB PAR PAR with CFR Frequency=2.14GHz VVds=28V, = 28 V,Ids=500mA, IDS = 0.5 A, Frequency = 2.14 GHz DS -20 50% UnCorrected -ACLR -25 45% UnCorrected +ACLR Corrected -ACLR -30 40% ACLR (dBc) -35 35% UnCorrected Eff Corrected Eff -40 30% -45 25% -50 20% -55 15% -60 10% -65 5% -70 Drain Efficiency Corrected +ACLR 0% 15 0 -10 20 25 30 35 40 Output Power (dBm) 45 50 WCDMA Linearity with DPD Linearizer measured CGH21120F-AMP Amplifier Circuit. CGH21120F in WCDMA Linearity with DPD Linearizer Single Channel WCDMA PAR with CFR WCDMA 6.5dB PAR 6.5dB with CFR Ids=500mA Pout=44dBm, V, IDS = 0.5d=40%, A, POUTVds=28V, = 44 dBm, Efficiency = 40 % VDS = 28 Uncorrected DPD Corrected -20 -30 -40 -50 -60 -70 -80 -90 2.125 2.13 2.135 2.14 2.145 2.15 2.155 Frequency (GHz) Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH21120F VDD = 28 V, IDQ = 500 mA Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH21120F VDD = 28 V, IDQ = 500 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2000 18.17 - j15.4 3.43 - j0.24 2050 16.88 - j16.5 3.44 - j0.18 2100 15.31 - j17.44 3.43 - j0.15 2150 13.53 - j18.07 3.42 - j0.12 2200 11.63 - j18.35 3.37 - j0.10 2250 9.76 - j18.23 3.31 - j0.08 2300 8.00 - j17.78 3.22 - j0.06 Note1 VDD = 28V, IDQ = 0.5 A in the 440162 package. Note2 Impedances are extracted from CGH21120F-AMP demonstration circuit and are not source and load pull data derived from transistor. CGH21120F Power Dissipation De-rating Curve CGH21120F Average Power Dissipation De-rating Curve 70 60 Power Dissipation (W) 50 40 Note 1 30 20 10 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH21120F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 10 OHMS 1 R2 RES, 1/16W, 0603, 1%, 5.1 OHMS 1 CAP, 10 pF, +/-5%, ATC600S 3 C1, C3, C8 CAP, 27 pF, +/-5%, ATC600S 1 C5, C10 C2 CAP, 470 pF, +/-5%, 100V, 0603 2 C6, C11, C18 CAP, 33000 pF, 0805, 100V, X7R 3 C7 CAP, 10 uF, 16V, TANTALUM 1 C9 CAP, 82 pF, +/-5%, ATC600S 1 C12 CAP 100 uF, 160V, ELECTROLYTIC 1 C13 CAP, 24 pF, +/-5%, ATC600F 1 C14 CAP 8.2pF, +/-0.25 ATC600S 1 CAP, 1.0 uF, +/-10%, 1210, 100V, X7R 2 CAP, 33 uF, +/-20%, G CASE 1 C15, C19 C20 J1, J2 CONN, N-Type, Female, 0.500 SMA Flange 2 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 1 - PCB, RO4350, Er = 3.48, h = 20 mil 1 - CGH21120F 1 J3 CGH21120F-AMP Demonstration Amplifier Circuit Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH21120F-AMP Demonstration Amplifier Circuit Schematic CGH21120F-AMP Demonstration Amplifier Circuit Outline Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH21120F (Small Signal, VDS = 28 V, IDQ = 0.5 A, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.961 179.86 3.67 68.26 0.007 -16.54 0.722 -173.72 600 MHz 0.960 178.22 3.09 63.27 0.007 -20.46 0.732 -173.18 700 MHz 0.959 176.75 2.69 58.41 0.007 -24.23 0.744 -172.73 800 MHz 0.957 175.36 2.40 53.65 0.007 -27.89 0.755 -172.37 900 MHz 0.955 173.99 2.19 48.94 0.007 -31.47 0.768 -172.12 1.0 GHz 0.952 172.61 2.03 44.26 0.008 -35.01 0.780 -171.96 1.1 GHz 0.949 171.20 1.91 39.56 0.008 -38.53 0.792 -171.88 1.2 GHz 0.944 169.72 1.82 34.81 0.008 -42.08 0.805 -171.88 1.3 GHz 0.938 168.15 1.77 29.95 0.008 -45.70 0.817 -171.94 1.4 GHz 0.930 166.46 1.74 24.91 0.009 -49.47 0.829 -172.06 1.5 GHz 0.920 164.63 1.73 19.59 0.009 -53.47 0.842 -172.23 1.6 GHz 0.907 162.63 1.75 13.89 0.010 -57.82 0.854 -172.45 1.7 GHz 0.889 160.43 1.80 7.63 0.011 -62.66 0.868 -172.72 1.8 GHz 0.863 158.03 1.87 0.61 0.011 -68.22 0.882 -173.07 1.9 GHz 0.828 155.48 1.97 -7.46 0.013 -74.76 0.897 -173.54 2.0 GHz 0.780 153.01 2.10 -16.94 0.014 -82.64 0.914 -174.18 2.1 GHz 0.715 151.22 2.24 -28.22 0.015 -92.25 0.932 -175.11 2.2 GHz 0.637 151.48 2.36 -41.58 0.017 -103.85 0.948 -176.42 2.3 GHz 0.566 155.82 2.42 -56.84 0.017 -117.27 0.958 -178.09 2.4 GHz 0.541 164.16 2.38 -73.11 0.017 -131.60 0.958 -179.89 2.5 GHz 0.577 171.39 2.22 -88.96 0.017 -145.40 0.949 178.57 2.6 GHz 0.643 173.87 2.01 -103.24 0.015 -157.52 0.935 177.50 2.7 GHz 0.708 172.59 1.79 -115.54 0.014 -167.55 0.922 176.84 2.8 GHz 0.760 169.28 1.60 -126.07 0.013 -175.66 0.912 176.44 2.9 GHz 0.796 164.87 1.44 -135.23 0.012 177.73 0.905 176.14 3.0 GHz 0.821 159.63 1.32 -143.50 0.011 172.16 0.900 175.88 3.2 GHz 0.843 146.16 1.17 -158.98 0.010 162.55 0.894 175.28 3.4 GHz 0.835 125.42 1.13 -175.91 0.010 152.13 0.891 174.54 3.6 GHz 0.799 88.32 1.17 161.01 0.011 136.18 0.888 173.59 3.8 GHz 0.786 21.79 1.15 126.34 0.011 109.17 0.886 172.34 4.0 GHz 0.879 -50.56 0.84 87.99 0.008 78.81 0.879 170.82 4.2 GHz 0.951 -93.77 0.52 61.47 0.006 60.37 0.869 169.25 4.4 GHz 0.979 -116.72 0.33 44.97 0.004 51.78 0.856 167.49 4.6 GHz 0.990 -130.14 0.22 33.45 0.003 47.74 0.840 165.43 4.8 GHz 0.994 -138.83 0.16 24.22 0.002 45.41 0.819 162.96 5.0 GHz 0.997 -144.91 0.12 15.93 0.002 43.34 0.789 159.95 5.2 GHz 0.998 -149.42 0.10 7.73 0.002 40.67 0.746 156.25 5.4 GHz 0.998 -152.92 0.08 -1.09 0.002 36.72 0.683 151.66 5.6 GHz 0.999 -155.72 0.07 -11.28 0.002 30.81 0.589 146.08 5.8 GHz 0.999 -158.03 0.06 -23.63 0.002 22.20 0.449 140.15 6.0 GHz 0.999 -159.97 0.05 -38.80 0.002 10.30 0.254 139.99 To download the s-parameters in s2p format, go to the CGH21120F Product Page and click on the documentation tab. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH21120F (Package Type — 440162) Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH21120F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH21120F-TB CGH21120F-AMP Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH21120F Rev 3.1 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH21120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf