CGH21120F, 120W, 20W AVERAGE POWER, 1800

CGH21120F
120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Cree’s CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier
applications. The transistor is supplied in a ceramic/metal flange package.
Package Type
: 440162
PN: CGH2112
0F
Typical Performance Over 2.0-2.3GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
Units
Gain @ 43 dBm
14.0
15.0
15.0
14.5
dB
ACLR @ 43 dBm
-36.5
-36.0
-34.0
-33.5
dBc
Drain Efficiency @ 43 dBm
33.5
34.5
36.5
40.0
%
Note:
Measured in the CGH21120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
1.8 - 2.3 GHz Operation
•
15 dB Gain
•
-35 dBc ACLR at 20 W PAVE
•
35 % Efficiency at 20 W PAVE
•
High Degree of DPD Correction Can be Applied
2015
Rev 3.1 – June
•
Subject to change without notice.
www.cree.com/RF
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Symbol
Rating
Units
Conditions
VDSS
84
Volts
25˚C
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
Power Dissipation
PDISS
56
Watts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
30
mA
25˚C
Maximum Drain Current1
IDMAX
12
A
25˚C
Soldering Temperature2
TS
245
˚C
Screw Torque
τ
80
in-oz
RθJC
1.5
˚C/W
TC
-40, +150
˚C
Thermal Resistance, Junction to Case3
Case Operating Temperature3
85˚C
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH21120F at PDISS = 56 W.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 28.8 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 0.5 A
Saturated Drain Current2
IDS
23.2
28.0
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 28.8 mA
DC Characteristics1
RF Characteristics (TC = 25˚C, F0 = 2.15 GHz unless otherwise noted)
Saturated Output Power3,4,5
PSAT
–
110
–
W
VDD = 28 V, IDQ = 0.5 A,
η
–
70
–
%
VDD = 28 V, IDQ = 0.5 A, POUT = PSAT
GSS
13.5
15
–
dB
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
ACLR
–
-35
-30
dBc
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
η
29
35
–
%
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 0.5 A, POUT = 20 W CW
Input Capacitance7
CGS
–
66
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance7
CDS
–
12
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
1.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Pulsed Drain Efficiency3,5
Modulated Gain6
WCDMA Linearity6
Modulated Drain Efficiency6
Output Mismatch Stress
Dynamic Characteristics
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Pulse Width = 40 μS, Duty Cycle = 5 %.
4
PSAT is defined as IG = 10 mA peak.
5
Measured in CGH21120F-AMP.
6
Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB @ 0.01 % Probability on CCDF.
7
Includes package and internal matching components.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Pulse Performance
Typical Pulse Characteristics
Output Power,
Drain
Efficiency,
CGH21120F
Typical
Pulsed
Transferand Gain vs Input Power
measured in CGH21120F-AMP
Amplifier
Circuit.
=40uS, 5% Duty Cycle
Vds=28V,
Ids=500mA,
Frequency=2.15GHz
VDS = 28 V, IDS = 0.5 A,
Freq = 2.15
GHz, Pulse
Width = 40 μS, Duty Cycle = 5 %
80
18
Gain
70
Output Power
16
Drain Efficiency
Gain
50
15
Output Power
40
14
30
Gain (dB)
60
Output Power (dBm)
Drain Efficiency (%)
17
13
Efficiency
20
12
10
11
0
10
0
5
10
15
20
25
30
35
40
Input Power (dBm)
52.0
78%
51.5
76%
51.0
74%
50.5
72%
50.0
70%
Psat
49.5
Drain Efficiency (%)
Saturated Output Power (dBm)
Typical Pulsed Saturated Power vs Frequency
CGH21120F
Pulsed Psat
vs. Frequency
measured
in CGH21120F-AMP
Amplifier
Circuit.
T=40uS,
Duty
Cycle
IGS Peak,5%
Pulse
Width
= 40 μS, Duty Cycle = 5 %
VDS = 28 V, IDS = 0.5 A, PSAT = 10 mA
Vds=28V, Ids=500mA, Psat = 10mA Igs peak
68%
Drain Efficiency
49.0
66%
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
Frequency (GHz)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Linear Performance
Typical Small
Lossover
vs Frequency
CGH21120F
SmallSignal
Signal Gain
Gain and
and Return
Return Loss
Frequency
measured
in
CGH21120F-AMP
Amplifier
Circuit.
in Broadband Amplifier Circuit, CGH21120F-TB
=28V,
VVDS=
28 V,IDSI =500mA
= 0.5 A
Linear Gain (dB)
DS
0
19
-2
18
-4
17
-6
16
-8
15
-10
14
-12
13
Return Loss (dB)
DS
20
-14
Gain
12
-16
Return Loss
11
-18
10
-20
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
Frequency (GHz)
Typical WCDMA Performance
Typical WCDMA Characteristics ACLR and Drain Efficiency vs Output Power
measured in CGH21120F-AMP Amplifier Circuit.
CGH21120F Typical WCDMA Transfer
3GPP Test
Model
1, 641,DPCH
67 67%
% Clipping,
8.81 dB
PAR
@ 0.01 %
3GPP
Test Model
64 DPCH
clipping, 8.81dB
PAR
@0.01%
35V
= 2.15GHz
VDS = 28 Vds=28V,
V and 35
V, Ids=500mA,
IDS = 0.5 A,Frequency
Frequency
= 2.15 GHz
45%
-31
28V -ACLR
42%
-32
28V +ACLR
39%
-33
35V -ACLR
36%
-34
35V +ACLR
33%
-35
28V Eff
30%
-36
35V Eff
27%
-37
24%
-38
21%
-39
18%
-40
15%
-41
12%
-42
9%
-43
6%
-44
3%
-45
0%
25
30
35
40
Output Power (dBm)
45
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
Drain Efficiency
ACLR (dBc)
-30
CGH21120F Rev 3.1
50
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WCDMA Digital Pre-Distortion (DPD) Performance
WCDMA Characteristics with and without DPD Correction
ACLR and Drain Efficiency vs Output Power
measured
in Transfer
CGH21120F-AMP
Amplifier
Circuit.
CGH21120F WCDMA
with and without
DPD correction
SingleChannel
Channel
WCDMA
6.5dB
with CFR
Single
WCDMA
6.5dB
PAR PAR
with CFR
Frequency=2.14GHz
VVds=28V,
= 28 V,Ids=500mA,
IDS = 0.5 A,
Frequency = 2.14 GHz
DS
-20
50%
UnCorrected -ACLR
-25
45%
UnCorrected +ACLR
Corrected -ACLR
-30
40%
ACLR (dBc)
-35
35%
UnCorrected Eff
Corrected Eff
-40
30%
-45
25%
-50
20%
-55
15%
-60
10%
-65
5%
-70
Drain Efficiency
Corrected +ACLR
0%
15
0
-10
20
25
30
35
40
Output Power (dBm)
45
50
WCDMA Linearity with DPD Linearizer
measured
CGH21120F-AMP
Amplifier
Circuit.
CGH21120F in
WCDMA
Linearity with DPD
Linearizer
Single Channel
WCDMA
PAR with CFR
WCDMA 6.5dB
PAR 6.5dB
with CFR
Ids=500mA
Pout=44dBm,
V, IDS = 0.5d=40%,
A, POUTVds=28V,
= 44 dBm,
Efficiency = 40 %
VDS = 28
Uncorrected
DPD Corrected
-20
-30
-40
-50
-60
-70
-80
-90
2.125
2.13
2.135
2.14
2.145
2.15
2.155
Frequency (GHz)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
K Factor
MAG (dB)
Simulated Maximum Available Gain and K Factor of the CGH21120F
VDD = 28 V, IDQ = 500 mA
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH21120F
VDD = 28 V, IDQ = 500 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
2000
18.17 - j15.4
3.43 - j0.24
2050
16.88 - j16.5
3.44 - j0.18
2100
15.31 - j17.44
3.43 - j0.15
2150
13.53 - j18.07
3.42 - j0.12
2200
11.63 - j18.35
3.37 - j0.10
2250
9.76 - j18.23
3.31 - j0.08
2300
8.00 - j17.78
3.22 - j0.06
Note1 VDD = 28V, IDQ = 0.5 A in the 440162 package.
Note2 Impedances are extracted from CGH21120F-AMP demonstration circuit
and are not source and load pull data derived from transistor.
CGH21120F Power Dissipation De-rating Curve
CGH21120F Average Power Dissipation De-rating Curve
70
60
Power Dissipation (W)
50
40
Note 1
30
20
10
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH21120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, 1%, 10 OHMS
1
R2
RES, 1/16W, 0603, 1%, 5.1 OHMS
1
CAP, 10 pF, +/-5%, ATC600S
3
C1, C3, C8
CAP, 27 pF, +/-5%, ATC600S
1
C5, C10
C2
CAP, 470 pF, +/-5%, 100V, 0603
2
C6, C11, C18
CAP, 33000 pF, 0805, 100V, X7R
3
C7
CAP, 10 uF, 16V, TANTALUM
1
C9
CAP, 82 pF, +/-5%, ATC600S
1
C12
CAP 100 uF, 160V, ELECTROLYTIC
1
C13
CAP, 24 pF, +/-5%, ATC600F
1
C14
CAP 8.2pF, +/-0.25 ATC600S
1
CAP, 1.0 uF, +/-10%, 1210, 100V, X7R
2
CAP, 33 uF, +/-20%, G CASE
1
C15, C19
C20
J1, J2
CONN, N-Type, Female, 0.500 SMA Flange
2
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
1
-
PCB, RO4350, Er = 3.48, h = 20 mil
1
-
CGH21120F
1
J3
CGH21120F-AMP Demonstration Amplifier Circuit
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH21120F-AMP Demonstration Amplifier Circuit Schematic
CGH21120F-AMP Demonstration Amplifier Circuit Outline
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH21120F
(Small Signal, VDS = 28 V, IDQ = 0.5 A, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.961
179.86
3.67
68.26
0.007
-16.54
0.722
-173.72
600 MHz
0.960
178.22
3.09
63.27
0.007
-20.46
0.732
-173.18
700 MHz
0.959
176.75
2.69
58.41
0.007
-24.23
0.744
-172.73
800 MHz
0.957
175.36
2.40
53.65
0.007
-27.89
0.755
-172.37
900 MHz
0.955
173.99
2.19
48.94
0.007
-31.47
0.768
-172.12
1.0 GHz
0.952
172.61
2.03
44.26
0.008
-35.01
0.780
-171.96
1.1 GHz
0.949
171.20
1.91
39.56
0.008
-38.53
0.792
-171.88
1.2 GHz
0.944
169.72
1.82
34.81
0.008
-42.08
0.805
-171.88
1.3 GHz
0.938
168.15
1.77
29.95
0.008
-45.70
0.817
-171.94
1.4 GHz
0.930
166.46
1.74
24.91
0.009
-49.47
0.829
-172.06
1.5 GHz
0.920
164.63
1.73
19.59
0.009
-53.47
0.842
-172.23
1.6 GHz
0.907
162.63
1.75
13.89
0.010
-57.82
0.854
-172.45
1.7 GHz
0.889
160.43
1.80
7.63
0.011
-62.66
0.868
-172.72
1.8 GHz
0.863
158.03
1.87
0.61
0.011
-68.22
0.882
-173.07
1.9 GHz
0.828
155.48
1.97
-7.46
0.013
-74.76
0.897
-173.54
2.0 GHz
0.780
153.01
2.10
-16.94
0.014
-82.64
0.914
-174.18
2.1 GHz
0.715
151.22
2.24
-28.22
0.015
-92.25
0.932
-175.11
2.2 GHz
0.637
151.48
2.36
-41.58
0.017
-103.85
0.948
-176.42
2.3 GHz
0.566
155.82
2.42
-56.84
0.017
-117.27
0.958
-178.09
2.4 GHz
0.541
164.16
2.38
-73.11
0.017
-131.60
0.958
-179.89
2.5 GHz
0.577
171.39
2.22
-88.96
0.017
-145.40
0.949
178.57
2.6 GHz
0.643
173.87
2.01
-103.24
0.015
-157.52
0.935
177.50
2.7 GHz
0.708
172.59
1.79
-115.54
0.014
-167.55
0.922
176.84
2.8 GHz
0.760
169.28
1.60
-126.07
0.013
-175.66
0.912
176.44
2.9 GHz
0.796
164.87
1.44
-135.23
0.012
177.73
0.905
176.14
3.0 GHz
0.821
159.63
1.32
-143.50
0.011
172.16
0.900
175.88
3.2 GHz
0.843
146.16
1.17
-158.98
0.010
162.55
0.894
175.28
3.4 GHz
0.835
125.42
1.13
-175.91
0.010
152.13
0.891
174.54
3.6 GHz
0.799
88.32
1.17
161.01
0.011
136.18
0.888
173.59
3.8 GHz
0.786
21.79
1.15
126.34
0.011
109.17
0.886
172.34
4.0 GHz
0.879
-50.56
0.84
87.99
0.008
78.81
0.879
170.82
4.2 GHz
0.951
-93.77
0.52
61.47
0.006
60.37
0.869
169.25
4.4 GHz
0.979
-116.72
0.33
44.97
0.004
51.78
0.856
167.49
4.6 GHz
0.990
-130.14
0.22
33.45
0.003
47.74
0.840
165.43
4.8 GHz
0.994
-138.83
0.16
24.22
0.002
45.41
0.819
162.96
5.0 GHz
0.997
-144.91
0.12
15.93
0.002
43.34
0.789
159.95
5.2 GHz
0.998
-149.42
0.10
7.73
0.002
40.67
0.746
156.25
5.4 GHz
0.998
-152.92
0.08
-1.09
0.002
36.72
0.683
151.66
5.6 GHz
0.999
-155.72
0.07
-11.28
0.002
30.81
0.589
146.08
5.8 GHz
0.999
-158.03
0.06
-23.63
0.002
22.20
0.449
140.15
6.0 GHz
0.999
-159.97
0.05
-38.80
0.002
10.30
0.254
139.99
To download the s-parameters in s2p format, go to the CGH21120F Product Page and click on the documentation tab.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH21120F (Package Type ­— 440162)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH21120F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH21120F-TB
CGH21120F-AMP
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH21120F Rev 3.1
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
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CGH21120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf