CGHV40100 100 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange Package Type s: 440193 & 44 0206 PN: CGHV401 00F & CGHV4 0100P and pill package. Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C), 50 V Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units Small Signal Gain 17.6 16.9 17.7 17.5 14.8 dB Saturated Output Power 147 100 141 116 112 W Drain Efficiency @ PSAT 68 56 58 54 54 % Input Return Loss 6 5.1 10.5 5.5 8.8 dB Note: Measured CW in the CGHV40100F-AMP application circuit. ber 2015 Rev 3.1 -Septem Features • Up to 4 GHz Operation • 100 W Typical Output Power • 17.5 dB Small Signal Gain at 2.0 GHz • Application Circuit for 0.5 - 2.5 GHz • 55 % Efficiency at PSAT • 50 V Operation Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature ˚C TSTG -65, +150 Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 20.8 mA 25˚C Maximum Drain Current IDMAX 8.7 A 25˚C Soldering Temperature2 TS 245 ˚C 1 τ 40 in-oz 3 Thermal Resistance, Junction to Case RθJC 1.62 ˚C/W 85˚C Thermal Resistance, Junction to Case4 RθJC 1.72 ˚C/W 85˚C TC -40, +150 ˚C 30 seconds Screw Torque Case Operating Temperature 5 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGHV40100P at PDISS = 83 W. 4 Measured for the CGHV40100F at PDISS = 83 W. 5 See also, Power Derating Curve on Page 5. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 20.8 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 0.6 A Saturated Drain Current2 IDS 15.6 18.7 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 20.8 mA DC Characteristics1 RF Characteristics3 (TC = 25˚C, F0 = 2.0 GHz unless otherwise noted) Small Signal Gain GSS – 17.5 – dB VDD = 50 V, IDQ = 0.6 A Power Gain GP – 11.0 – dB VDD = 50 V, IDQ = 0.6 A, POUT = PSAT PSAT – 116 – W VDD = 50 V, IDQ = 0.6 A η – 54 – % VDD = 50 V, IDQ = 0.6 A, POUT = PSAT VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 0.6 A, POUT = 100 W CW Input Capacitance CGS – 29.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 7.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.61 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Power Output at Saturation4 Drain Efficiency Output Mismatch Stress Dynamic Characteristics5 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV40100-AMP 4 PSAT is defined as IG = 0.208 mA. 5 Includes package Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40100 Typical Performance Figure 1. - Small Signal Gain and Return Losses versus Frequency measured in Small Signal S-parameters application circuit CGHV40100-AMP CGHV40100F in Applications Circuit VDD = 50 V, = IDQ50= V, 600 Tcase 25°C= 25°C Vdd IdqmA, = 600 mA, = Tcase 24 S11 S21 20 S22 Gain, Return Loss (dB) 16 12 8 4 0 -4 -8 -12 -16 0.0 0.5 1.0 1.5 Frequency (GHz) 2.0 2.5 3.0 CGHV40100F Applications Circuit Figure 2. - Output Power and Drain in Efficiency vs Frequency = V, 50IV, Idq = 600 mA, Tcase = 25°C VDDVdd = 50 = 600 mA DQ CW @ Psat 38 68 Output Power 36 66 Drain Efficiency 34 64 Gain 32 62 30 Drain Efficiency 60 28 58 26 56 24 54 22 52 20 50 18 Output Power 48 16 46 14 44 12 Gain 42 40 0.25 Gain (dB) Pout (dBm), Drain Efficiency (%) 70 0.50 0.75 1.00 1.25 1.50 1.75 10 2.00 2.25 2.50 8 2.75 Frequency (GHz) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40100 Typical Performance Figure 3. - Third Order Intermodulation Distortion vs Average Output Power CGHV40100F in Applications Circuit measured in Broadband Amplifier Circuit CGHV40100-AMP Vdd = 50 V, Idq = 600 mA, Tcase = 25°C Spacing = 1 MHz, VDD = 50 V, IDQ = 600 mA, Tcase = 25°C 1 MHz Two Tone Spacing 0 0.5 GHz -5 1.5 GHz -10 2.5 GHz IMD3 (dBc) -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 27 29 31 33 35 37 39 Average Output Power (dBm) 41 43 45 47 2.50 2.75 Figure 4. - Third Order Intermodulation Distortion vs Frequency CGHV40100F in Applications Circuit measured in Broadband Amplifier Circuit Vdd = 50 V, Idq = 600CGHV40100-AMP mA, Tcase = 25°C Spacing = 1 MHz,1 V = 50 V, I = 600 mA, Tcase = 25°C MHz DD Two Tone DQ Spacing @ 10W Average Pout 0 -5 -10 IMD3 (dBc) -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 0.25 0.50 0.75 1.00 1.25 1.50 1.75 Frequency (GHz) 2.00 2.25 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40100 Typical Performance Avaliable Gain & Figure 5.Maximum - GMAX and K-Factor vsK-Factor Frequency CGHV40100 VDD =Vdd 50 =V,50IDQ = 600 mA, Tcase = 25°C V, Idq = 600 mA, Tcase = 25°C 45 1.25 Gmax 35 0.75 30 0.5 25 0.25 GMAX (dB) 1 20 0.0 0.5 1.0 1.5 2.0 Frequency (GHz) 2.5 3.0 3.5 4.0 K-Factor K-Factor 40 0 CGHV40100 Power Dissipation De-rating Curve Figure 6. - Transient Dissipation De-Rating Curve CGHV40100Power Power Dissipation De-Rating Curve 90 80 Power Dissipation (W) 70 60 50 40 30 Flange - CW 20 Pill - CW 10 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 0.43 + j5.25 8.83 + j0.85 10.78 + j2.50 750 0.40 + j2.62 1000 0.30 + j1.31 9.06 + 4.23 1250 0.30 + j0.44 7.40 + j3.85 1500 0.30 - j0.44 6.39 + j3.44 1750 0.25 - j0.87 4.41 + j3.03 2000 0.25 - j1.31 3.68 + j2.17 2250 0.25 - j2.18 3.42 + j2.17 2500 0.26 - j2.62 2.65 + j1.74 Note 1. VDD = 50 V, IDQ = 600 mA in the 440193 package. Note 2. Optimized for power gain, PSAT and PAE. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40100-AMP Application Circuit Schematic CGHV40100-AMP Application Circuit Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf CGHV40100-AMP Application Circuit Bill of Materials Designator Description Qty C1, C13, C15 CAP, 39 pF, ± 0.1 pF, 250V, 0805, ATC600F 3 C2 CAP, 7.5 pF, ± 0.1 pF, 250 V, 0806, ATC600F 1 C3 CAP, 3 pF ± 0.1 pF, 250 V, 0805, ATC600F 1 CAP, 1.5 pF, ± 0.1 pF, 250 V, 0805, ATC600F 2 CAP, 33000 pF, 0805 100V, X7R 1 CAP, 240 pF, ± 0.5 pF, 250 V, 0805, ATC600F 2 C4, C5 C7 C6, C14 CAP, 10 UF, 16V TANTALUM, 2312 1 C9, C10 C8 CAP, 1 pF, ± 0.1 pF, 250 V, 0805, ATC600F 2 C11, C12 CAP, 0.5 pF, ± 0.1 pF, 250 V, 0805, ATC600F 2 C16 CAP, 100 UF, 20%, 160 V, ELEC 1 R1 RES, 24 OHMS, IMS ND3-1005CS24R0G 1 R2 RED, 100 OHMS, IMS ND3-0805EW1000G 1 R3 RES, 3.9 OHMS, 0805 1 CONN, SMA, PANEL MOUNT JACK 2 HEADER RT>PLZ .1CEN LK 9POS 1 BASEPLATE, CGH35120 1 PCB, RO4350B, 2.5” X 4” X 0.020”, CGHV40100F 1 J1, J2 J3 CGHV40100-AMP Demonstration Amplifier Circuit Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV40100F (Package Type — 440193) Product Dimensions CGHV40100P (Package Type — 440206) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV40100F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 4.0 GHz 100 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV40100F GaN HEMT Each CGHV40100P GaN HEMT Each Test board without GaN HEMT Each CGHV40100F-AMP Test board with GaN HEMT (flanged) installed Each CGHV40100P-AMP Test board with GaN HEMT(pill) installed Each CGHV40100-TB Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV40100 Rev 3.1 Image Photo TBD Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGHV40100 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf