CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V Package Type : 3x4 DFN PN: CGHV270 30S operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band and 28 V operations. The CGHV27030S is also ideal for tactical communications applications RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Typical Performance 2.5-2.7 GHz (TC = 25˚C) , 50 V Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 23.0 22.0 21.4 dB Adjacent Channel Power @ POUT =5 W -34.5 -36.5 -37.0 dBc Drain Efficiency @ POUT = 5 W 29.5 31.5 32.9 % Input Return Loss 13.4 9.5 10.4 dB Note: Measured in the CGHV27030S-AMP1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Features for 50 V in CGHV27030S-AMP1 • • • • • • 2.5 - 2.7 GHz Operation 30 W Typical Output Power 21 dB Gain at 5 W PAVE -36 dBc ACLR at 5 W PAVE 32% efficiency at 5 W PAVE High degree of APD and DPD correction can be applied 15 Rev 2.0 – May 20 Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit Operating Frequency Amplifier Class Operating Voltage CGHV27030S-AMP1 2.5 - 2.7 GHz Class A/B 50 V CGHV27030S-AMP2 2.5 - 2.7 GHz Class A/B 28 V CGHV27030S-AMP3 1.8 - 2.2 GHz Class A/B 28 V CGHV27030S-AMP4 1.8 - 2.2 GHz Class A/B 50 V CGHV27030S-AMP5 1.2 - 1.4 GHz Class A/B 50 V Subject to change without notice. www.cree.com/RF 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 4 mA 25˚C Maximum Drain Current1 IDMAX 1.5 A 25˚C ˚C Soldering Temperature TS 245 Case Operating Temperature3 TC -40, +150 ˚C RθJC 6.18 ˚C/W 2 Thermal Resistance, Junction to Case4 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. See also, the Power Dissipation De-rating Curve on page 12. 4 Measured for the CGHV27030S at PDISS = 12 W 5 The RTH for Cree’s demonstration amplifier, CGHV27030S-AMP1, with 33 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9°C. The total RTH from the heat sink to the junction is 6.18°C + 3.9°C = 10.08°C/W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 4 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 0.13 mA Saturated Drain Current IDS 3.0 3.6 – A VDS = 6.0 V, VGS = 2.0 V V(BR)DSS 150 – – VDC VGS = -8 V, ID = 4 mA DC Characteristics Conditions 1 Drain-Source Breakdown Voltage RF Characteristics2,3 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted) Gain G – 20.7 - dB VDD = 50 V, IDQ = 0.13 A, POUT = 37 dBm ACLR – -37 – dBc VDD = 50 V, IDQ = 0.13 A, POUT = 37 dBm η – 32.9 - % VDD = 50 V, IDQ = 0.13 A, POUT = 37 dBm VSWR - 10 : 1 - Y No damage at all phase angles, VDD = 50 V, IDQ = 0.13 A, POUT = 37 dBm Input Capacitance5 CGS – 5.38 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance5 CDS – 1.18 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.12 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz WCDMA Linerarity4 Drain Efficiency4 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in Cree’s production test fixture. This fixture is designed for high volume test at 2.7 GHz 4 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF 5 Includes package parasitics. Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV27030S-AMP1 Figure 1. - Small Signal Gain and Return Losses vs Frequency VDD = 50 V, IDQ = 0.13 A Small Signal Gain and Return Losses vs. Frequency for CGHV27030S measured in Application Circuit CGHV27030S-TB VDD=50 V, IDQ=0.13 A 30 25 Gain (dB) Input and Output Return Loss 20 15 10 5 0 -5 -10 -15 S11 S21 S22 -20 -25 2200 2300 2400 2500 2600 2700 2800 Frequency (MHz) 2900 3000 3100 3200 Typical Drain Efficiency and ACLR vs. Output Power of CGHV27030S measured in CGHV27030S-TB Figure 2. - Typical Drain Efficiency and ACLR vs. Output Power VDD=50 V,IDQ=0.13 A, 1c WCDM, PAR=7.5 VDD = 50 V, IDQ = 0.13 A, 1c WCDMA, PAR = 7.5 dB dB 0 -5 45.0 40.0 ACLR_2p5 ACLR_2p6 -10 35.0 ACLR_2p7 -15 EFF_2p6 30.0 EFF_2p7 -20 25.0 -25 Efficiency -30 15.0 ACLR -35 -40 -45 20.0 Efficiency (%) ACLR (dBC) EFF_2p5 10.0 5.0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 0.0 Pout (dBm) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV27030S-AMP1 Figure 3. - Typical Gain, Drain Efficiency and ACLR vs Frequency VDD = 50 V , IDQ = 0.13 A, PAVE = 5 W, 1c WCDMA, PAR = 7.5 dB Typical Gain, Drain Efficincy and ACLR vs Frequency CGHV27030S measured in Application Circuit CGHV27030S-TB VDD=50 V, IDQ-0.13,PAVE=5W,1cWCDMA, PAR=7.5 dB 40 -20.0 Drain Efficiency 35 Drain Efficiency -25.0 25 -27.5 Gain Gain 20 -30.0 15 -32.5 10 5 ACLR ACLR ACLR (dBc) Gain (dB) & Drain Efficiency (%) 30 -22.5 -35.0 GAIN -37.5 EFF ACLR 0 2.45 2.50 2.55 2.60 Frequency (GHz) 2.65 2.70 -40.0 2.75 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances for Application Circuit CGHV27030S-AMP1 D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2500 2.2 - j0.7 10.9 + j15.7 2600 2.8 - j1.1 11.5 + j16.7 2700 2.5 - j1.7 12.1+j17.7 Note1: VDD = 50 V, IDQ = 0.13 A in the DFN package. Note2: Impedances are extracted from the CGHV27030S-AMP1 application circuit and are not source and load pull data derived from the transistor. CGHV27030S-AMP1 Bill of Materials Designator R1, R2 Description Qty RES, 22.6, OHM, +/-1%, 1/16W, 0603 2 C1 CAP, 3.3 pF, ±0.1 pF, 0603, ATC 1 C2, C3, C4 CAP, 0.7 pF, ±0.05 pF, 0603, ATC 3 C5, C11, C15 CAP, 8.2 pF, ±0.25 pF, 0603, ATC 3 C6, C16 CAP, 470 pF, 5%, 100 V, 0603 2 C7, C17 CAP, 33000 pF, 0805, 100 V, 0603, X7R 2 C18 CAP, 1.0 UF, 100 V, 10%, X7R, 1210 1 C8 CAP, 10 UF 16 V TANTALUM 1 C19 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 HEADER RT>PLZ .1CEN LK 5 POS 1 PCB, ROGERS 4350, ER 3.66 1 CGHV27030S, QFN 1 J1, J2 J3 PCB Q1 CGHV27030S -AMP1 Application Circuit Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27030S-AMP1 Application Circuit Schematic, 50 V CGHV27030S-AMP1 Application Circuit Outline, 50 V Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics When Tested in CGHV27030S-AMP2, 28 V, 2.5 - 2.7 GHz ˚ Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 15.5 15.7 16.0 dB Adjacent Channel Power @ POUT =3.2 W -42.0 -41.7 -41.2 dBc Drain Efficiency @ POUT = 3.2 W 33.5 34.2 34.1 % Input Return Loss -9.0 -8.8 -10.2 dB Note: Measured in the CGHV27030S-AMP2 application circuit.Under 7.5 dB PAR single carrier WCDMA signal test mode Small Signal Return Losses CGHV27030S Figure 4. and - Small Signal Gain vs. andFrequency Return Losses vs Frequency measured in AD-03-000308 (Application circuit optimzied VDD = 28 V, IDQ = 0.13 A for 28 V perfomance) VDD=28 V, IDQ=0.13 30 25 Gain (dB) Input and Output Return Loss 20 15 10 5 0 -5 -10 -15 S11 -20 S21 S22 -25 -30 2200 2300 2400 2500 2600 2700 2800 Frequency (MHz) 2900 3000 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV27030S Rev 2.0 3100 3200 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV27030S-AMP2 Typical Drain Efficiency and ACLR vs Output Power CGHV27030S measured in Application Circuit (AD-03-000308) optimizedPower for 28 V operation Figure 5. - Typical Drain Efficiency and ACLR vs. Output VDD=28V,IDQ=0.13 VDD = 28 V, IDQ = 0.13 A, 1c WCDMA, PAR = 7.5 dB 0 45 ACLR_2p5 -5 40 ACLR_2p6 EFF2P5 -15 ACLR(dBc) 35 ACLR_2p7 30 EFF2P6 EFF2P7 -20 25 -25 20 -30 15 -35 10 -40 5 -45 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Efficiency (%) -10 0 Pout (dBm) Typical Efficiency Drain Efficiencyand and ACLR vs. Frequency Figure 6. - Typical Gain, Drain ACLR vs Frequency CGHV27030S measured in Application Circuit (AD-03-000308) optimized for 28 V operation VDD = 28 V, IDQ = 0.13 A, P = 3.2 W, 1c WCDMA, PAR = 7.5 dB VDD=28 AVEV, IDQ-0.13,PAVE=3.2W,1cWCDMA, PAR=7.5 dB 40 -25.00 Drain Efficiency -27.50 30 25 20 -30.00 -32.50 GAIN EFF -35.00 ACLR Gain 15 -37.50 10 -40.00 ACLR 5 0 2.45 ACLR (dBc) Gain (dB), Drain Efficiency (%) 35 -42.50 2.50 2.55 2.60 2.65 2.70 -45.00 2.75 Frequency (GHz) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances for Application Circuit CGHV27030S-AMP2 D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2500 2.9 - j2.7 14.5 + j7.4 2600 3.1 - j2.9 13.8 + j7.3 2700 2.7 - j3.1 12.9+j7.6 Note : VDD = 28 V, IDQ = 0.13 A in the DFN package. Note2: Impedances are extracted from the CGHV27030S-AMP2 application circuit and are not source and load pull data derived from the transistor 1 CGHV27030S-AMP2 Bill of Materials Designator R1, R2 Description CGHV27030S-AMP2 Application Circuit Qty RES, 22.6, OHM, +/-1%, 1/16W, 0603 2 C1 CAP, 3.0 pF, ±0.1 pF, 0603, ATC 1 C2 CAP, 0.9 pF, ±0.05 pF, 0603, ATC 3 RES, 1/16W, 0603, 1%, 5.1% OHMS 3 C3,C4 CAP, 1.2 pF, +/-0.1 pF, 0603, ATC 2 C5, C11, C15 CAP, 8.2 pF, ±0.25 pF, 0603, ATC 3 C6, C16 CAP, 470 pF, 5%, 100 V, 0603 2 C7, C17 R3,R4,R5 CAP, 33000 pF, 0805, 100 V, 0603, X7R 2 C18 CAP, 1.0 UF, 100 V, 10%, X7R, 1210 1 C8 CAP, 10 UF 16 V TANTALUM 1 C19 CAP, 33 UF, 20%, G CASE 1 J1, J2 CONN, SMA, PANEL MOUNT JACK 2 J3 HEADER RT>PLZ .1CEN LK 5 POS 1 PCB, ROGERS 4350, ER 3.66 1 CGHV27030S, QFN 1 PCB Q1 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27030S-AMP2 Application Circuit Schematic, 28 V CGHV27030S-AMP2 Application Circuit Outline, 28 V Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics When Tested in CGHV27030S-AMP3, 28 V, 1.8 - 2.2 GHz Parameter 1.8 GHz 2.0 GHz 2.2 GHz Units Small Signal Gain 19 19 18 dB Adjacent Channel Power @ POUT =3.2 W -37 -38 -39 dBc Drain Efficiency @ POUT = 3.2 W 35 35 33 % Input Return Loss 5 6 7 dB Note: Measured in the CGHV27030S-AMP2 application circuit. Figure 7. - Small Signal Gain and Return Losses vs Frequency VDD = 28 V, IDQ = 0.13 A 25 20 Gain (dB) Input and Output Return Loss 15 10 5 0 -5 -10 -15 S11 -20 S21 S22 -25 1.5 1.6 1.7 1.8 1.9 2.0 2.1 Frequency (GHz) 2.2 2.3 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV27030S Rev 2.0 2.4 2.5 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV27030S-AMP3 Figure 8. - Typical Drain Efficiency and ACLR vs. Output Power VDD = 28 V, IDQ = 0.13 A, 1c WCDMA, PAR = 7.5 dB 0 60 -5 ACLR_1p8 DE_1p8 40 DE_2p0 -20 DE_2p2 -25 30 -30 20 -35 -40 Drain Efficiency ( %) ACLR_2p2 -15 ACLR (dBc) 50 ACLR_2p0 -10 10 -45 -50 20 22 24 26 28 30 32 34 36 38 0 Output Power (dBm) Figure 9. - Typical Gain, Drain Efficiency and ACLR vs Frequency VDD = 28 V, IDQ = 0.13 A, PAVE = 3.2 W, 1c WCDMA, PAR = 7.5 dB 50 -20 -25 Drain Efficiency 30 -30 Gain 20 -35 ACLR (dBc) Gain, dB & Drain Efficiency( %) 40 ACLR Drain Efficiency 10 -40 Gain ACLR 0 1.8 1.9 2.0 2.1 2.2 -45 Frequency (GHz) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances for Application Circuit CGHV27030S-AMP3 D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1800 6.16 - j3.5 21.9 + j6.5 2000 6.8 - j1.7 21 + j8.4 2200 5.5 - j2.0 20.8 + j11 Note1: VDD = 28 V, IDQ = 0.13 A in the DFN package. Note2: Impedances are extracted from the CGHV27030S-AMP3 application circuit and are not source and load pull data derived from the transistor CGHV27030S-AMP3 Bill of Materials CGHV27030S-AMP3 Application Circuit Designator Description Qty R1 RES, 10, OHM, +/-1%, 1/16W, 0603 1 R2 RES, 120, OHM, +/-1%, 1/16W, 0603 1 L1 IND, 3.9 nH, +/-5%, 0603, JOHANSON 1 C1 CAP, 0.7 pF, +/-0.1 pF, 0603, ATC 1 C2 CAP, 6.8 pF, +/-5%, 0603, ATC 1 C3 CAP, 47pF, +/-0.1 pF, 0603, ATC 1 C4 CAP, 1.5 pF, +/-0.1 pF, 0603, ATC 1 C5 CAP, 2.7 pF, +/-0.1 pF, 0603, ATC 1 C6, C12 CAP, 8.2 pF, +/-0.25 pF, 0603, ATC 2 C7, C13 CAP, 470 pF, 5%, 100 V, 0603 2 C8, C14 CAP, 33000 pF, 0805, X7R 2 C9 CAP 10 UF 16 V TANTALUM 1 C10 CAP, 0.7 pF, +/-0.05 pF, 0603, ATC 1 C11 CAP, 20 pF, +/-5%, 0603, ATC 1 C15 CAP, 1.0 UF, 100V, 10%, X7R, 1210 1 C16 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 PCB, RO4350, 0.020” THK 1 BASEPLATE, CGH35015, 2.60 X 1.7 1 HEADER RT>PLZ .1CEN LK 5POS 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CGHV27030S, QFN 1 J1, J2 J3 Q1 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27030S-AMP3 Application Circuit Schematic, 28 V CGHV27030S-AMP3 Application Circuit Outline, 28 V Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics When Tested in CGHV27030S-AMP4, 50 V, 1.8 - 2.2 GHz Parameter 1.8 GHz 2.0 GHz 2.2 GHz Units Small Signal Gain 22 22 21 dB Adjacent Channel Power @ POUT =5 W -39 -38 -37 dBc Drain Efficiency @ POUT = 5 W 31 32 33 % Input Return Loss 5 7 6 dB Note: Measured in the CGHV27030S-AMP2 application circuit. Figure 10. - Small Signal Gain and Return Losses vs Frequency VDD = 50 V, IDQ = 0.13 A 30 25 Gain (dB) Input and Output Return Loss 20 15 10 5 0 -5 -10 S11 -15 S21 -20 -25 S22 1.5 1.6 1.7 1.8 1.9 2.0 2.1 Frequency (GHz) 2.2 2.3 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 15 CGHV27030S Rev 2.0 2.4 2.5 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV27030S-AMP4 Figure 11. - Typical Drain Efficiency and ACLR vs. Output Power VDD = 50 V, IDQ = 0.13 A, 1c WCDMA, PAR = 7.5 dB 0 45 ACLR_1p8 -5 40 ACLR_2p0 DE_1p8 -15 ACLR (dBc) 35 ACLR_2p2 30 DE_2p0 DE_2p2 -20 25 -25 20 -30 15 -35 10 -40 5 -45 20 22 24 26 28 30 32 34 36 38 Drain Efficiency ( %) -10 0 Output Power (dBm) Figure 12. - Typical Gain, Drain Efficiency and ACLR vs Frequency VDD = 50 V, IDQ = 0.13 A, PAVE = 5 W, 1c WCDMA, PAR = 7.5 dB 50 -20 -25 Drain Efficiency Drain Efficiency 30 -30 Gain Gain 20 -35 ACLR (dBc) Gain, dB & Drain Efficiency( %) 40 ACLR Drain Efficiency 10 -40 ACLR Gain ACLR 0 1.8 1.9 2.0 2.1 2.2 -45 Frequency (GHz) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 16 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances for Application Circuit CGHV27030S-AMP4 D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1800 5.0 - j3.3 20.0 + j18.6 2000 6.4 - j3.3 17.8 + j19.1 2200 4.0 - j2.7 16.2 + j20.8 Note : VDD = 50 V, IDQ = 0.13 A in the DFN package. Note2: Impedances are extracted from the CGHV27030S-AMP4 application circuit and are not source and load pull data derived from the transistor 1 CGHV27030S-AMP4 Bill of Materials Designator Description CGHV27030S-AMP4 Application Circuit Qty R1 RES, 220, OHM, +/-1%, 1/16W, 0603 1 R2 RES, 10, OHM, +/-1%, 1/16W, 0603 1 L1 IND, 3.3 nH, +/-5%, 0603, JOHANSON 1 C1 CAP, 3.3 pF, +/-0.1 pF, 0603, ATC 1 CAP, 8.2 pF, +/-5%, 0603, ATC 1 C2, C5, C10, C11 C3, C4 CAP, 0.6 pF, +/-0.1 pF, 0603, ATC 2 C6, C12 CAP, 470 pF, 5%, 100V, 0603, X 2 C7, C13 CAP, 33000 pF, 0805, 100V. X7R 2 C8 CAP 10 UF 16 V TANTALUM 1 C9 CAP, 1.0 pF, +/-0.1 pF, 0603, ATC 1 C14 CAP, 1.0 UF, 100V, 10%, X7R, 1210 1 C15 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 J1, J2 PCB PCB, RO4350, 0.020” THK 1 J3 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGHV27030S, QFN 1 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 17 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27030S-AMP4 Application Circuit Schematic, 50 V CGHV27030S-AMP4 Application Circuit Outline, 50 V Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 18 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics When Tested in CGHV27030S-AMP5, 50 V, 1.2 - 1.4 GHz Parameter 1.2 GHz 1.3 GHz 1.4 GHz Units Output Power @ PIN = 27 dBm 35.5 33.5 32.5 W Gain @ PIN = 27 dBm 18.5 18.25 18.1 dB 71 67 65 % Drain Efficiency @ PIN = 27 dBm Note: Measured in the CGHV27030S-AMP2 application circuit. Figure 13. - Small Signal Gain and Return Losses vs Frequency VDD = 50 V,and IDQ =Return 0.125Loss A vs. Frequency Small Signal Gain Vdd = 50 V, Idq = 0.125 A 30 Gain (dB), Input and Output Return Loss (dB) 25 20 15 10 5 0 -5 -10 -15 -20 S(2,1) S(1,1) -25 -30 S(2,2) 0.8 0.9 1 1.1 1.2 1.3 Frequency (GHz) 1.4 1.5 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 19 CGHV27030S Rev 2.0 1.6 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGHV27030S-AMP5 Figure 14. - Typical Output Power and Drain Efficiency Input Power and Drain Efficiency Output VDD = 50 V,Typical IDQ = Output 0.125Power A, Pulse Width = 100vs.us, DutyPower Cycle = 10 % 80 45 70 40 60 35 50 Output Power - 1.2 GHz Output Power - 1.3 GHz Output Power - 1.4 GHz 30 40 Drain Efficiency - 1.2 GHz Drain Efficiency (%) Output Power (dBm) Vdd = 50 V, Idq = 0.125 A, Pulse Width = 100 us, Duty Cycle = 10 % 50 Drain Efficiency - 1.3 GHz Drain Efficiency - 1.4 GHz 25 20 30 13 15 17 19 21 Input Power (dBm) 23 25 27 29 20 Figure 15. - Typical Output Power, Gain, and Drain Efficiency vs Frequency VDD = 50 V, IDQ = 0.125 A, PIN = 27 dBm, Pulse Width = 100 us, Duty Cycle = 10 % CGHV27030S-TB5 RF Measurements vs Frequency at Pin = 27 dBm Vdd = 50 V, Idq = 0.125 A, Pulse Width = 100 us, Duty Cycle = 10 % Output Power (W), Gain (dB) and Drain Efficiency(%) 90 Output Power 80 Drain Efficiency Gain Drain Efficiency 70 Drain Efficiency 60 50 Output Power 40 Gain 30 20 Gain 10 0 1.05 ACLR 1.10 1.15 1.20 1.25 1.30 1.35 Frequency (GHz) 1.40 1.45 1.50 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 20 CGHV27030S Rev 2.0 1.55 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances for Application Circuit CGHV27030S-AMP5 D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1200 8.6 - j5.4 25.4 - j29.2 1300 8.7 - j5.1 27.6 - j30.5 1400 7.4 - j5.2 30.1 - j31.8 Note : VDD = 50 V, IDQ = 0.125 A in the DFN package. Note2: Impedances are extracted from the CGHV27030S-AMP5 application circuit and are not source and load pull data derived from the transistor 1 CGHV27030S-AMP5 Bill of Materials Designator CGHV27030S-AMP5 Application Circuit Description Qty R1 RES, 2.2, OHM, 1/10W 5% 0603 SMD 1 R2 RES, 1/16W, 0603, 1%, 14.7 OHMS 1 C1 CAP, 2.2 pF, +/-0.1 pF, 0603, ATC 1 C2, C3 CAP, 3.9 pF, +/-0.1 pF, 0603, ATC 2 C4 CAP, 1.2 pF, +/-0.1 pF, 0603, ATC 1 C5 CAP, 24 pF, +/-5%, 0603, ATC 1 C6, C12 CAP, 470 pF, 5%, 100V, 0603, X 2 C7, C13 CAP, 33000 pF, 0805, 100V, Z7R 2 C8, C14 CAP, 1.0 UF, 100V, 10%, X7R, 1210 2 C9 CAP, 43 pF, +/-5%, 0603, ATC 1 C10 CAP, 4.7 pF, +/-0.1 pF, 0603, ATC600S 1 C11 CAP, 100.0 pF, +/-5%, 0603, ATC 1 C15 CAP, 33 UF, 20%, G CASE CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 PCB PCB, RO4350, L-BAND, 1.7” X 2.6” 1 J3 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGHV27030S, QFN 1 J1, J2 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 21 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27030S-AMP5 Application Circuit Schematic, 50 V CGHV27030S-AMP5 Application Circuit Outline, 50 V Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 22 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27030S Power Dissipation De-rating Curve Figure 16. - CGHV27030S Power Dissipation De-Rating Curve CGHV27030S Power Dissipation De-Rating Curve 16 14 Power Dissipation (W) 12 10 Note 1 8 6 4 2 0 0 25 50 75 100 125 150 Maximum Temperature ( C) 175 200 225 250 Note 1. Area exceeds Maximum Case Temperature (See Page 2). Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Moisture Sensitivity Level (MSL) Classification Parameter Moisture Sensitivity Level Symbol Level Test Methodology MSL 3 (168 hours) IPC/JEDEC J-STD-20 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 23 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Avaliable & K-Factor GMaximum and K-Factor vsGain Frequency MAX VDD = 50 V, IDQ =CGHV27030S 130 mA, Tcase = 25°C Vdd = 50 V, Idq = 130 mA, Tcase = 25°C 45 2 Gmax 40 1.75 K-Factor GMAX(dB) 1.25 30 1 K-Factor 1.5 35 25 0.75 20 0.5 15 10 0.25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 Frequency (GHz) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 24 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV27030S (Package 3 x 4 DFN) Pin Input/Output 1 GND 2 NC 3 RF IN 4 RF IN 5 NC 6 GND 7 GND 8 NC 9 RF OUT 10 RF OUT 11 NC 12 GND Note: Leadframe finish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer. Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 25 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV27030S Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 2.7 GHz 30 W Surface Mount - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 26 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV27030S GaN HEMT Each CGHV27030S-AMP1 Test board without GaN HEMT, 50 V 2.5-2.7 GHz Each CGHV27030S-AMP2 Test board with GaN HEMT installed 28 V 2.5-2.7 GHz Each CGHV27030S-AMP3 Test board with GaN HEMT installed 28 V 1.8-2.2 GHz Each CGHV27030S-AMP4 Test board with GaN HEMT installed 50 V 1.8-2.2 GHz Each CGHV27030S-AMP5 Test board with GaN HEMT installed 50 V 1.2-1.4 GHz Each CGHV27030S-TR Delivered in Tape ard Reel 250 parts / reel Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 27 CGHV27030S Rev 2.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.313.5639 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 28 CGHV27030S Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf