CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package. Package Type s: 440203 PN’s: CGH4000 6S FEATURES APPLICATIONS • Up to 6 GHz Operation • 2-Way Private Radio • 13 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 11 dB Small Signal Gain at 6.0 GHz • Cellular Infrastructure • 8 W typical at PIN = 32 dBm • Test Instrumentation • 65 % Efficiency at PIN = 32 dBm • Class A, AB, Linear amplifiers suitable for • 28 V Operation • 3mm x 3mm Package 15 Rev 3.0 – May 20 OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature ˚C TSTG -65, +150 Operating Junction Temperature TJ 175 ˚C Maximum Forward Gate Current IGMAX 2.1 mA 25˚C Maximum Drain Current IDMAX 0.75 A 25˚C Soldering Temperature2 TS 260 ˚C RθJC 10.1 ˚C/W TC -40, +150 ˚C 1 Thermal Resistance, Junction to Case3,4 Case Operating Temperature 3,4 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40006S at PDISS = 8 W. 4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. The RTH for Cree’s demonstration amplifier, CGH40006S-AMP1, with 13 (Ø20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 5.1°C. The total Rth from the heat sink to the junction is 10.1°C +5.1°C = 15.2 °C/W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 2.1 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 100 mA Saturated Drain Current IDS 1.7 2.1 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 2.1 mA DC Characteristics Conditions 1 RF Characteristics2 (TC = 25˚C, F0 = 5.8 GHz unless otherwise noted) Small Signal Gain GSS 10 11.8 – dB VDD = 28 V, IDQ = 100 mA Power Output at PIN = 30 dBm POUT 5 6.9 – W VDD = 28 V, IDQ = 100 mA η 40 53 – % VDD = 28 V, IDQ = 100 mA, PIN = 30 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm Input Capacitance CGS – 2.7 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.1 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency3 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in Cree’s narrow band production test fixture AD-000291. This fixture is designed for high volume test at 5.8 GHz and may not show the full capability of the device due to source inductance and thermal performance. The demonstration amplifier, CGH40006S-AMP1, is a better indicator of the true RF performance of the device. 3 Drain Efficiency = POUT / PDC Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Small Signal Gain vs Frequency at 28 V of the CGH40006S S-parameter in the CGH40006S-AMP1 16 14 12 Gain (dB) 10 8 6 4 CGH40006S - S21 2 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 4.5 5.0 5.5 6.0 5.5 6.0 Input & Output Return Losses vs Frequency at S-parameter 28 V of the CGH40006S in the CGH40006S-AMP1 0 -2 -4 -6 -8 Gain (dB) -10 -12 -14 -16 -18 -20 -22 CGH40006S - S11 -24 CGH40006S - S22 -26 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) 4.5 5.0 Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Power Gain vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD = 28 V, vs. IDQ = 100 mA Gain Pout 20 2.0 GHz 18 3.0 GHz 4.0 GHz 5.0 GHz 16 6.0 GHz Gain (dB) 14 12 10 8 6 4 2 0 20 22 24 26 28 30 32 34 36 38 40 Output Power (dBm) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDDEFF = 28vsV,output IDQ = 100 mA power 70% 2.0 GHz 60% 3.0 GHz 4.0 GHz 5.0 GHz Drain Efficiency 50% 6.0 GHz 40% 30% 20% 10% 0% 20 22 24 26 28 30 32 34 36 38 40 Output Power (dBm) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDDGain = 28vs V, input IDQ = 100 mA power 14 12 Gain (dB) 10 8 6 2.0 GHz 4 3.0 GHz 4.0 GHz 5.0 GHz 2 6.0 GHz 0 10 12 14 16 18 20 22 24 26 28 30 32 34 32 34 Input Power (dBm) Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 vs. Pin VDDDrain = 28Efficiency V, IDQ = 100 mA 100% 2.0 GHz 90% 3.0 GHz 80% 4.0 GHz 5.0 GHz Drain Efficiency 70% 6.0 GHz 60% 50% 40% 30% 20% 10% 0% 10 12 14 16 18 20 22 24 26 28 30 Input Power (dBm) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Power Gain vs Frequency of the CGH40006S in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V Gain @ Pin 32 dBm 10 9 8 7 Gain (dB) 6 5 4 3 2 1 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Output Power vs Frequency of the CGH40006S in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V Power (w) @ Pin 32 dBm 12 Output Power (W) 10 8 6 4 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Drain Efficiency vs Frequency of the CGH40006S in the CGH40006S-AMP1 = 32 dBm, VDD = 28 V Drain efficiencyat @P Pin IN 32 dBm 70% 60% Drain Efficiency 50% 40% 30% 20% 10% 0% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD = V, IDQ = 60 power mA IM3 vs28 Total output 0 2.0 GHz -10 3.0 GHz 4.0 GHz 5.0 GHz IM3 (dBc) -20 6.0 GHz -30 -40 -50 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Output Power (dBm) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Moisture Sensitivity Level (MSL) Classification Parameter Moisture Sensitivity Level Symbol Level Test Methodology MSL 3 (168 hours) IPC/JEDEC J-STD-20 Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance MAG (dB) K Factor Simulated Maximum Available Gain and K Factor of the CGH40006S VDD = 28 V, IDQ = 100 mA Note 1. On a 20 mil thick PCB. Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006S VDD = 28 V, IDQ = 100 mA Note 1. On a 20 mil thick PCB. Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40006S CW Power Dissipation De-rating Curve Power Dissipation derating Curve vs max Tcase 10 9 Power Dissipation (W) 8 7 6 5 4 3 Note 1 2 1 0 0 25 50 75 100 125 150 175 200 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 1000 12.7 + j20.2 62.3 + j42 2000 5.98 + j6.81 32.7 + j32.9 3000 3.32 - j2.89 19.2 + j29.8 4000 2.38 - j9.45 15.2 + j15.7 5000 2.62 - j15.6 9.98 + j9.6 6000 1.94 - j21.35 8.51 + j2.07 Note 1. VDD = 28V, IDQ = 100mA in the 440203 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Note 4. 35 pH source inductance is assumed between the package and RF ground (20 mil thick PCB). Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40006S-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, AIN, 0505, 470 Ohms (≤5% tolerance) 1 R2 RES, AIN, 0505, 50 Ohms (≤5% tolerance) 1 R3 RES, AIN, 0505, 360 Ohms (≤5% tolerance) 1 C1 CAP, 1.3 pF +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 2.7 pF +/-0.25 pF, 0603, ATC 600S 1 C10 CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S 1 C4,C11 CAP, 8.2 pF +/-0.25, 0603, ATC 600S 2 C6,C13 CAP, 470 pF +/-5%, 0603, 100 V 2 C7,C14 CAP, 33000 pF, CER, 100V, X7R, 0805 2 C8 CAP, 10 uf, 16V, SMT, TANTALUM 1 C15 CAP, 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP, 33 uF, 100V, ELECT, FK, SMD 1 CONN, SMA, STR, PANEL, JACK, RECP 2 HEADER RT>PLZ .1CEN LK 5POS 1 PCB, RO5880, 0.020” THK 1 CGH40006S 1 J3,J4 J1 Q1 CGH40006S-AMP1 Demonstration Amplifier Circuit Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40006S-AMP1 Demonstration Amplifier Circuit Schematic CGH40006S-AMP1 Demonstration Amplifier Circuit Outline Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40006S (Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 600 MHz 0.933 -92.95 18.74 125.47 0.024 38.02 0.459 -48.87 0.922 -104.26 16.89 118.64 0.026 31.70 0.428 -54.78 700 MHz 0.912 -113.77 15.28 112.75 0.028 26.33 0.402 -59.82 800 MHz 0.905 -121.83 13.90 107.61 0.029 21.71 0.381 -64.21 900 MHz 0.899 -128.73 12.70 103.06 0.030 17.68 0.365 -68.10 1.0 GHz 0.894 -134.72 11.67 98.96 0.030 14.11 0.352 -71.62 1.1 GHz 0.891 -139.97 10.77 95.23 0.030 10.91 0.342 -74.86 1.2 GHz 0.888 -144.62 9.99 91.80 0.031 8.00 0.334 -77.87 1.3 GHz 0.886 -148.78 9.31 88.61 0.031 5.34 0.328 -80.72 1.4 GHz 0.884 -152.55 8.71 85.61 0.031 2.88 0.325 -83.43 1.5 GHz 0.883 -155.97 8.17 82.77 0.031 0.58 0.322 -86.03 1.6 GHz 0.881 -159.12 7.69 80.07 0.031 -1.57 0.321 -88.54 1.7 GHz 0.881 -162.04 7.26 77.49 0.031 -3.60 0.321 -90.98 1.8 GHz 0.880 -164.75 6.88 75.00 0.031 -5.53 0.321 -93.35 1.9 GHz 0.879 -167.29 6.53 72.60 0.031 -7.38 0.323 -95.67 2.0 GHz 0.879 -169.68 6.21 70.26 0.031 -9.14 0.325 -97.94 2.1 GHz 0.879 -171.94 5.92 68.00 0.030 -10.83 0.327 -100.17 2.2 GHz 0.879 -174.09 5.65 65.79 0.030 -12.46 0.330 -102.36 2.3 GHz 0.879 -176.14 5.40 63.62 0.030 -14.03 0.334 -104.51 2.4 GHz 0.879 -178.10 5.18 61.51 0.030 -15.55 0.338 -106.63 2.5 GHz 0.879 -179.98 4.97 59.43 0.030 -17.02 0.342 -108.71 2.6 GHz 0.879 178.20 4.77 57.38 0.029 -18.44 0.346 -110.77 2.7 GHz 0.879 176.44 4.59 55.37 0.029 -19.83 0.351 -112.81 2.8 GHz 0.879 174.74 4.42 53.39 0.029 -21.18 0.355 -114.82 2.9 GHz 0.879 173.09 4.26 51.43 0.029 -22.48 0.360 -116.80 3.0 GHz 0.880 171.49 4.11 49.50 0.028 -23.76 0.366 -118.76 3.2 GHz 0.880 168.39 3.84 45.70 0.028 -26.20 0.376 -122.63 3.4 GHz 0.881 165.43 3.60 41.97 0.027 -28.51 0.387 -126.41 3.6 GHz 0.882 162.57 3.38 38.31 0.026 -30.70 0.399 -130.13 3.8 GHz 0.883 159.81 3.19 34.71 0.025 -32.75 0.410 -133.78 4.0 GHz 0.884 157.13 3.01 31.16 0.025 -34.68 0.422 -137.38 4.2 GHz 0.885 154.52 2.85 27.65 0.024 -36.47 0.433 -140.91 4.4 GHz 0.887 151.96 2.71 24.19 0.023 -38.12 0.445 -144.40 4.6 GHz 0.888 149.45 2.57 20.77 0.022 -39.63 0.457 -147.84 4.8 GHz 0.889 146.98 2.45 17.38 0.022 -40.97 0.468 -151.24 5.0 GHz 0.890 144.55 2.33 14.03 0.021 -42.15 0.480 -154.60 5.2 GHz 0.892 142.15 2.23 10.71 0.020 -43.15 0.491 -157.92 5.4 GHz 0.893 139.78 2.13 7.41 0.019 -43.95 0.503 -161.20 5.6 GHz 0.894 137.43 2.04 4.15 0.018 -44.53 0.514 -164.45 5.8 GHz 0.896 135.11 1.95 0.91 0.018 -44.89 0.525 -167.66 6.0 GHz 0.897 132.80 1.87 -2.30 0.017 -45.00 0.535 -170.85 To download the s-parameters in s2p format, go to the CGH40006S Product Page and click on the documentation tab. Note 2. On a 20 mil thick PCB. Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH40006S (Package Type — 440203) Pin Input/Output 1 GND 2 RF IN 3 GND 4 GND 5 RF OUT 6 GND Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Tape & Reel Dimensions Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH40006S GaN HEMT Each Test board with GaN HEMT installed Each CFG40006S-AMP1 CGH40006S-TR Delivered in Tape and Reel 250 parts / reel Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 15 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, Wireless Devices 1.919.407.7816 Tom Dekker Sales Director Cree, Wireless Devices 1.919.407.5639 Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 16 CGH40006S Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf