CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down, flange and solder-down, pill packages. Package Type : 440196 and 440166 PN: CGH2703 0P and CGH27 030F Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 15.6 15.5 15.3 15.1 15.2 dB EVM at PAVE = 36 dBm 1.73 1.85 1.85 1.77 1.43 % Drain Efficiency at 36 dBm 28.1 28.7 28.9 27.9 27.5 % Input Return Loss 6.6 6.2 6.0 6.1 7.0 dB Note: Measured in the CGH27030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 15 Rev 4.0 – May 20 Features • VHF - 3.0 GHz Operation • 30 W Peak Power Capability • 15 dB Small Signal Gain • 4.0 W PAVE at < 2.0 % EVM • 28 % Drain Efficiency at 4 W Average Power • WiMAX Fixed Access 802.16-2004 OFDM • WiMAX Mobile Access 802.16e OFDMA Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 14 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 4.0 mA 25˚C Maximum Drain Current1 IDMAX 3.0 A 25˚C Soldering Temperature2 TS 245 ˚C τ 60 in-oz RθJC 4.8 ˚C/W TC -40, +150 ˚C Screw Torque Thermal Resistance, Junction to Case 3 Case Operating Temperature3 Conditions 85˚C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH27030F at PDISS= 14 W Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 7.2 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 150 mA Saturated Drain Current IDS 5.8 7.0 - A VDS = 6.0 V, VGS = 2 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 7.2 mA DC Characteristics Conditions 1 RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted) Small Signal Gain GSS 12.5 14.5 – dB VDD = 28 V, IDQ = 150 mA η 23.0 28.0 – % VDD = 28 V, IDQ = 150 mA, PAVE = 4 W Error Vector Magnitude EVM – 2.0 – Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 150 mA PAVE = 4.0 W OFDM PAVE Input Capacitance CGS – 9.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 2.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.4 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 VDD = 28 V, IDQ = 150 mA, PAVE = 4 W Dynamic Characteristics5 Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH27030F-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 4 Drain Efficiency = POUT / PDC. 5 Capacitance values include package parasitics. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance Small Signal S-Parameters vs Frequency measured in CGH27030F-AMP VDD = 28 V, IDQ = 150 mA 20 0 18 -1 -2 S21 14 -3 12 -4 10 -5 8 S11 (dB) S21 (dB) 16 -6 S11 6 -7 S21 4 -8 S11 2 -9 0 -10 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Frequency (GHz) Typical EVM and Efficiency versus Frequency measured in CGH27030F-AMP VDD = 28 V, IDQ = 150 mA, 802.16-2004 OFDM, PAR=9.8 dB, PAVE = 5 W 5.0 40% EVM @ 36 dBm 4.5 36% EVM @ 25 dBm Efficiency @ 36 dBm 4.0 32% 3.5 28% EVM (%) 3.0 24% EVM @ 25 dBm 2.5 20% 2.0 16% EVM @ 36 dBm 1.5 Efficiency Efficiency 12% 1.0 8% 0.5 4% 0.0 0% 2.3 2.4 2.5 Frequency (GHz) 2.6 2.7 Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical WiMAX Performance Drain Efficiency and EVM vs Output Power measured in CGH27030F-AMP VDD = 28 V, IDQ = 150 mA, 802.16-2004 OFDM, PAR = 9.8 dB 40% 4.5 EVM 36% 4.0 Drain Efficiency 32% 3.5 28% 3.0 24% Efficiency 2.5 20% 2.0 16% Drain Efficiency EVM (%) 5.0 EVM 1.5 12% 1.0 8% 0.5 4% 0.0 0% 22 24 26 28 30 32 34 36 Output Power (dBm) Typical Gain and Efficiency versus Output Power measured in CGH27030F-AMP VDD = 28 V, IDQ = 150 mA, 802.16-2004 OFDM, PAR=9.8 dB 20 40% 19 38% 18 36% Gain (dB) 34% Gain 16 32% 15 30% 14 28% 13 26% 12 24% 11 22% 10 20% 9 18% Efficiency 8 16% 7 14% 6 12% 5 10% Gain 4 8% Efficiency 3 Drain Efficiency 17 6% 2 4% 1 2% 0 0% 20 22 24 26 28 30 32 34 36 38 Power Output (dBm) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Data K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH27030F VDD = 28 V, IDQ = 150 mA Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH27030 VDD = 28 V, IDQ = 150 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 7.75 + j15.5 20 + j5.2 1000 3.11 + j5.72 17 + j6.66 16.8 + j3.2 1500 2.86 + j1.63 2500 1.2 - j3.26 9.41 + j3.2 3500 1.31 - j7.3 5.85 - j0.51 Note 1. VDD = 28V, IDQ = 250mA in the 440166 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH27030 Power Dissipation De-rating Curve CGH27030 Average Power Dissipation De-rating Curve 16 14 Power Dissipation (W) 12 10 8 Note 1 6 4 2 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH27030F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES,1/16W,0603,1%,100 OHMS R2 RES,1/16W,0603,1%,47 OHMS 1 1 C5 CAP, 470PF, 5%,100V, 0603 1 C15 CAP, 33 UF, 20%, G CASE 1 C14 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C7 CAP 10UF 16V TANTALUM 1 C12 CAP, 100.0pF, +/-5%, 0603 1 C1 CAP, 1.6pF, +/-0.1pF, 0603 1 C2 CAP, 1.8pF, +/-0.1pF, 0603 1 C3,C10 CAP, 10.0pF,+/-5%, 0603 2 C4,C11 CAP, 39pF, +/-5%, 0603 2 C8,C9 CAP, 3.0pF, +/-0.1pF, 0603 2 C6,C13 CAP,33000PF, 0805,100V, X7R 2 J3,J4 CONN SMA STR PANEL JACK RECP 1 J2 HEADER RT>PLZ.1CEN LK 2 POS 1 J1 HEADER RT>PLZ .1CEN LK 5POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH27030F 1 CGH27030F-AMP Demonstration Amplifier Circuit Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH27030F-AMP Demonstration Amplifier Circuit Schematic CGH27030F-AMP Demonstration Amplifier Circuit Outline Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH27030 (Small Signal, VDS = 28 V, IDQ = 150 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.910 -127.91 18.04 106.46 0.024 20.12 0.314 -103.83 600 MHz 0.904 -137.21 15.52 100.35 0.025 14.75 0.306 -111.67 700 MHz 0.900 -144.50 13.58 95.23 0.025 10.38 0.302 -117.66 800 MHz 0.897 -150.40 12.04 90.78 0.025 6.69 0.302 -122.33 900 MHz 0.895 -155.33 10.80 86.81 0.026 3.48 0.303 -126.06 1.0 GHz 0.894 -159.54 9.78 83.20 0.026 0.63 0.306 -129.12 1.1 GHz 0.893 -163.21 8.93 79.85 0.026 -1.95 0.310 -131.69 1.2 GHz 0.892 -166.46 8.22 76.69 0.025 -4.31 0.315 -133.89 1.3 GHz 0.891 -169.40 7.60 73.70 0.025 -6.51 0.321 -135.84 1.4 GHz 0.891 -172.09 7.07 70.84 0.025 -8.56 0.327 -137.59 1.5 GHz 0.891 -174.57 6.61 68.08 0.025 -10.50 0.334 -139.20 1.6 GHz 0.891 -176.88 6.20 65.41 0.025 -12.34 0.341 -140.70 1.7 GHz 0.891 -179.07 5.84 62.81 0.025 -14.09 0.348 -142.13 1.8 GHz 0.891 178.86 5.52 60.28 0.025 -15.76 0.355 -143.51 1.9 GHz 0.891 176.88 5.23 57.79 0.024 -17.36 0.362 -144.85 2.0 GHz 0.891 174.98 4.96 55.35 0.024 -18.90 0.370 -146.16 2.1 GHz 0.891 173.13 4.73 52.95 0.024 -20.38 0.378 -147.46 2.2 GHz 0.892 171.34 4.51 50.59 0.024 -21.80 0.385 -148.75 2.3 GHz 0.892 169.60 4.32 48.25 0.023 -23.16 0.393 -150.03 2.4 GHz 0.892 167.89 4.14 45.95 0.023 -24.48 0.400 -151.32 2.5 GHz 0.892 166.20 3.97 43.66 0.023 -25.74 0.408 -152.61 2.6 GHz 0.893 164.55 3.82 41.40 0.023 -26.95 0.415 -153.91 2.7 GHz 0.893 162.91 3.68 39.16 0.022 -28.11 0.422 -155.21 2.8 GHz 0.893 161.28 3.54 36.93 0.022 -29.22 0.429 -156.52 2.9 GHz 0.893 159.67 3.42 34.72 0.022 -30.28 0.436 -157.84 3.0 GHz 0.894 158.06 3.31 32.52 0.021 -31.28 0.443 -159.17 3.2 GHz 0.894 154.86 3.10 28.16 0.021 -33.13 0.456 -161.87 3.4 GHz 0.894 151.65 2.92 23.83 0.020 -34.76 0.469 -164.62 3.6 GHz 0.895 148.41 2.77 19.52 0.020 -36.15 0.480 -167.42 3.8 GHz 0.895 145.14 2.63 15.23 0.019 -37.28 0.491 -170.27 4.0 GHz 0.895 141.81 2.50 10.94 0.018 -38.13 0.501 -173.18 4.2 GHz 0.895 138.42 2.39 6.64 0.018 -38.69 0.510 -176.16 4.4 GHz 0.896 134.95 2.29 2.32 0.017 -38.93 0.519 -179.20 4.6 GHz 0.896 131.39 2.20 -2.02 0.017 -38.84 0.526 177.68 4.8 GHz 0.896 127.73 2.12 -6.40 0.016 -38.43 0.533 174.48 5.0 GHz 0.895 123.96 2.05 -10.82 0.016 -37.69 0.539 171.19 5.2 GHz 0.895 120.07 1.99 -15.29 0.016 -36.68 0.545 167.80 5.4 GHz 0.895 116.05 1.93 -19.83 0.016 -35.43 0.549 164.31 5.6 GHz 0.895 111.90 1.87 -24.44 0.016 -34.05 0.553 160.70 5.8 GHz 0.895 107.59 1.82 -29.13 0.016 -32.64 0.556 156.95 6.0 GHz 0.895 103.14 1.78 -33.91 0.016 -31.32 0.559 153.06 To download the s-parameters in s2p format, go to the CGH27030 Product Page and click on the documentation tab. Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH27030F (Package Type — 440166) Product Dimensions CGH27030P (Package Type — 440196) Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH27030F GaN HEMT Each CGH27030P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH27030F-TB CGH27030F-AMP Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH27030F Rev 4.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH27030F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf