CGH27030 - Cree, Inc

CGH27030
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Cree’s CGH27030 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGH27030 ideal for VHF,
Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications.
The unmatched transistor is available in both screw-down, flange and
solder-down, pill packages.
Package Type
: 440196 and
440166
PN: CGH2703
0P and CGH27
030F
Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Units
Small Signal Gain
15.6
15.5
15.3
15.1
15.2
dB
EVM at PAVE = 36 dBm
1.73
1.85
1.85
1.77
1.43
%
Drain Efficiency at 36 dBm
28.1
28.7
28.9
27.9
27.5
%
Input Return Loss
6.6
6.2
6.0
6.1
7.0
dB
Note:
Measured in the CGH27030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
15
Rev 4.0 – May 20
Features
•
VHF - 3.0 GHz Operation
•
30 W Peak Power Capability
•
15 dB Small Signal Gain
•
4.0 W PAVE at < 2.0 % EVM
•
28 % Drain Efficiency at 4 W Average Power
•
WiMAX Fixed Access 802.16-2004 OFDM
•
WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDSS
84
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Power Dissipation
PDISS
14
Watts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
4.0
mA
25˚C
Maximum Drain Current1
IDMAX
3.0
A
25˚C
Soldering Temperature2
TS
245
˚C
τ
60
in-oz
RθJC
4.8
˚C/W
TC
-40, +150
˚C
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature3
Conditions
85˚C
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH27030F at PDISS= 14 W
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 150 mA
Saturated Drain Current
IDS
5.8
7.0
-
A
VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 7.2 mA
DC Characteristics
Conditions
1
RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Small Signal Gain
GSS
12.5
14.5
–
dB
VDD = 28 V, IDQ = 150 mA
η
23.0
28.0
–
%
VDD = 28 V, IDQ = 150 mA, PAVE = 4 W
Error Vector Magnitude
EVM
–
2.0
–
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 150 mA
PAVE = 4.0 W OFDM PAVE
Input Capacitance
CGS
–
9.0
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
2.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.4
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency4
VDD = 28 V, IDQ = 150 mA, PAVE = 4 W
Dynamic Characteristics5
Notes:
1
Measured on wafer prior to packaging.
2
Measured in the CGH27030F-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = POUT / PDC.
5
Capacitance values include package parasitics.
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Small Signal S-Parameters vs Frequency measured in CGH27030F-AMP
VDD = 28 V, IDQ = 150 mA
20
0
18
-1
-2
S21
14
-3
12
-4
10
-5
8
S11 (dB)
S21 (dB)
16
-6
S11
6
-7
S21
4
-8
S11
2
-9
0
-10
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
Typical EVM and Efficiency versus Frequency measured in CGH27030F-AMP
VDD = 28 V, IDQ = 150 mA, 802.16-2004 OFDM, PAR=9.8 dB, PAVE = 5 W
5.0
40%
EVM @ 36 dBm
4.5
36%
EVM @ 25 dBm
Efficiency @ 36 dBm
4.0
32%
3.5
28%
EVM (%)
3.0
24%
EVM @
25 dBm
2.5
20%
2.0
16%
EVM @
36 dBm
1.5
Efficiency
Efficiency
12%
1.0
8%
0.5
4%
0.0
0%
2.3
2.4
2.5
Frequency (GHz)
2.6
2.7
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical WiMAX Performance
Drain Efficiency and EVM vs Output Power measured in CGH27030F-AMP
VDD = 28 V, IDQ = 150 mA, 802.16-2004 OFDM, PAR = 9.8 dB
40%
4.5
EVM
36%
4.0
Drain Efficiency
32%
3.5
28%
3.0
24%
Efficiency
2.5
20%
2.0
16%
Drain Efficiency
EVM (%)
5.0
EVM
1.5
12%
1.0
8%
0.5
4%
0.0
0%
22
24
26
28
30
32
34
36
Output Power (dBm)
Typical Gain and Efficiency versus Output Power measured in CGH27030F-AMP
VDD = 28 V, IDQ = 150 mA, 802.16-2004 OFDM, PAR=9.8 dB
20
40%
19
38%
18
36%
Gain (dB)
34%
Gain
16
32%
15
30%
14
28%
13
26%
12
24%
11
22%
10
20%
9
18%
Efficiency
8
16%
7
14%
6
12%
5
10%
Gain
4
8%
Efficiency
3
Drain Efficiency
17
6%
2
4%
1
2%
0
0%
20
22
24
26
28
30
32
34
36
38
Power Output (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance Data
K Factor
MAG (dB)
Simulated Maximum Available Gain and K Factor of the CGH27030F
VDD = 28 V, IDQ = 150 mA
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH27030
VDD = 28 V, IDQ = 150 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
500
7.75 + j15.5
20 + j5.2
1000
3.11 + j5.72
17 + j6.66
16.8 + j3.2
1500
2.86 + j1.63
2500
1.2 - j3.26
9.41 + j3.2
3500
1.31 - j7.3
5.85 - j0.51
Note 1. VDD = 28V, IDQ = 250mA in the 440166 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be
used to maintain amplifier stability.
CGH27030 Power Dissipation De-rating Curve
CGH27030 Average Power Dissipation De-rating Curve
16
14
Power Dissipation (W)
12
10
8
Note 1
6
4
2
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH27030F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES,1/16W,0603,1%,100 OHMS
R2
RES,1/16W,0603,1%,47 OHMS
1
1
C5
CAP, 470PF, 5%,100V, 0603
1
C15
CAP, 33 UF, 20%, G CASE
1
C14
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C7
CAP 10UF 16V TANTALUM
1
C12
CAP, 100.0pF, +/-5%, 0603
1
C1
CAP, 1.6pF, +/-0.1pF, 0603
1
C2
CAP, 1.8pF, +/-0.1pF, 0603
1
C3,C10
CAP, 10.0pF,+/-5%, 0603
2
C4,C11
CAP, 39pF, +/-5%, 0603
2
C8,C9
CAP, 3.0pF, +/-0.1pF, 0603
2
C6,C13
CAP,33000PF, 0805,100V, X7R
2
J3,J4
CONN SMA STR PANEL JACK RECP
1
J2
HEADER RT>PLZ.1CEN LK 2 POS
1
J1
HEADER RT>PLZ .1CEN LK 5POS
1
-
PCB, RO4350B, Er = 3.48, h = 20 mil
1
-
CGH27030F
1
CGH27030F-AMP Demonstration Amplifier Circuit
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH27030F-AMP Demonstration Amplifier Circuit Schematic
CGH27030F-AMP Demonstration Amplifier Circuit Outline
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH27030
(Small Signal, VDS = 28 V, IDQ = 150 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.910
-127.91
18.04
106.46
0.024
20.12
0.314
-103.83
600 MHz
0.904
-137.21
15.52
100.35
0.025
14.75
0.306
-111.67
700 MHz
0.900
-144.50
13.58
95.23
0.025
10.38
0.302
-117.66
800 MHz
0.897
-150.40
12.04
90.78
0.025
6.69
0.302
-122.33
900 MHz
0.895
-155.33
10.80
86.81
0.026
3.48
0.303
-126.06
1.0 GHz
0.894
-159.54
9.78
83.20
0.026
0.63
0.306
-129.12
1.1 GHz
0.893
-163.21
8.93
79.85
0.026
-1.95
0.310
-131.69
1.2 GHz
0.892
-166.46
8.22
76.69
0.025
-4.31
0.315
-133.89
1.3 GHz
0.891
-169.40
7.60
73.70
0.025
-6.51
0.321
-135.84
1.4 GHz
0.891
-172.09
7.07
70.84
0.025
-8.56
0.327
-137.59
1.5 GHz
0.891
-174.57
6.61
68.08
0.025
-10.50
0.334
-139.20
1.6 GHz
0.891
-176.88
6.20
65.41
0.025
-12.34
0.341
-140.70
1.7 GHz
0.891
-179.07
5.84
62.81
0.025
-14.09
0.348
-142.13
1.8 GHz
0.891
178.86
5.52
60.28
0.025
-15.76
0.355
-143.51
1.9 GHz
0.891
176.88
5.23
57.79
0.024
-17.36
0.362
-144.85
2.0 GHz
0.891
174.98
4.96
55.35
0.024
-18.90
0.370
-146.16
2.1 GHz
0.891
173.13
4.73
52.95
0.024
-20.38
0.378
-147.46
2.2 GHz
0.892
171.34
4.51
50.59
0.024
-21.80
0.385
-148.75
2.3 GHz
0.892
169.60
4.32
48.25
0.023
-23.16
0.393
-150.03
2.4 GHz
0.892
167.89
4.14
45.95
0.023
-24.48
0.400
-151.32
2.5 GHz
0.892
166.20
3.97
43.66
0.023
-25.74
0.408
-152.61
2.6 GHz
0.893
164.55
3.82
41.40
0.023
-26.95
0.415
-153.91
2.7 GHz
0.893
162.91
3.68
39.16
0.022
-28.11
0.422
-155.21
2.8 GHz
0.893
161.28
3.54
36.93
0.022
-29.22
0.429
-156.52
2.9 GHz
0.893
159.67
3.42
34.72
0.022
-30.28
0.436
-157.84
3.0 GHz
0.894
158.06
3.31
32.52
0.021
-31.28
0.443
-159.17
3.2 GHz
0.894
154.86
3.10
28.16
0.021
-33.13
0.456
-161.87
3.4 GHz
0.894
151.65
2.92
23.83
0.020
-34.76
0.469
-164.62
3.6 GHz
0.895
148.41
2.77
19.52
0.020
-36.15
0.480
-167.42
3.8 GHz
0.895
145.14
2.63
15.23
0.019
-37.28
0.491
-170.27
4.0 GHz
0.895
141.81
2.50
10.94
0.018
-38.13
0.501
-173.18
4.2 GHz
0.895
138.42
2.39
6.64
0.018
-38.69
0.510
-176.16
4.4 GHz
0.896
134.95
2.29
2.32
0.017
-38.93
0.519
-179.20
4.6 GHz
0.896
131.39
2.20
-2.02
0.017
-38.84
0.526
177.68
4.8 GHz
0.896
127.73
2.12
-6.40
0.016
-38.43
0.533
174.48
5.0 GHz
0.895
123.96
2.05
-10.82
0.016
-37.69
0.539
171.19
5.2 GHz
0.895
120.07
1.99
-15.29
0.016
-36.68
0.545
167.80
5.4 GHz
0.895
116.05
1.93
-19.83
0.016
-35.43
0.549
164.31
5.6 GHz
0.895
111.90
1.87
-24.44
0.016
-34.05
0.553
160.70
5.8 GHz
0.895
107.59
1.82
-29.13
0.016
-32.64
0.556
156.95
6.0 GHz
0.895
103.14
1.78
-33.91
0.016
-31.32
0.559
153.06
To download the s-parameters in s2p format, go to the CGH27030 Product Page and click on the documentation tab.
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH27030F (Package Type ­— 440166)
Product Dimensions CGH27030P (Package Type —
­ 440196)
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH27030F
GaN HEMT
Each
CGH27030P
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH27030F-TB
CGH27030F-AMP
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH27030F Rev 4.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH27030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf