CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Type : 440162 PN: CGH2512 0F Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Gain @ 43 dBm 12.5 12.8 13.1 13.5 13.6 dB ACLR @ 43 dBm -32.7 -34.0 -32.5 -29.5 -25.8 dBc Drain Efficiency @ 43 dBm 26.5 28.0 30.0 32.5 34.5 % Note: Measured in the CGH25120F-AMP amplifier circuit, under equivalent 802.16e WiMAX signal, 10 MHz Bandwidth, PAR = 9.6 dB @ 0.01 % Probability on CCDF. Features 2.3 - 2.7 GHz Operation • 13 dB Gain • -32 dBc ACLR at 20 W PAVE • 30 % Efficiency at 20 W PAVE • High Degree of DPD Correction Can be Applied 2015 Rev 3.1 - June • Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 56 Watts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 30 mA 25˚C Maximum Drain Current1 IDMAX 12 A 25˚C Soldering Temperature2 TS 245 ˚C Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature 3 τ 80 in-oz RθJC 1.5 ˚C/W TC -40, +150 ˚C Units 85˚C Note: Current limit for long term, reliable operation. Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH25120F at PDISS = 56 W. 1 2 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 28.8 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 0.5 A Saturated Drain Current2 IDS 23.2 28.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 28.8 mA DC Characteristics1 RF Characteristics (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted) Saturated Output Power3,4,5 PSAT – 130 – W VDD = 28 V, IDQ = 0.5 A, Pulsed Drain Efficiency3,5 η – 60 – % VDD = 28 V, IDQ = 0.5 A, POUT = PSAT Gain6 G 10.5 12.5 – dB VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm ACLR – -31 -27 dBc VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm η 27 32 – % VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 1.0 A, POUT = 20 W CW CGS – 88 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 12 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 1.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz WiMAX Linearity6,7 Drain Efficiency6 Output Mismatch Stress Dynamic Characteristics Input Capacitance8 8 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 40 μS, Duty Cycle = 5 %. 4 PSAT is defined as IG = 10 mA peak. 5 Measured in CGH25120F-AMP 6 Equivalent 802.16e WiMAX signal, 10 MHz Bandwidth, PAR = 9.6 dB @ 0.01% Probability on CCDF. 7 Measured over 10 MHz bandwidth at 10 MHz offset from carrier edge. 8 Includes package and internal matching components. Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance 18 0 15 -5 12 -10 9 -15 6 -20 Gain 3 Return Loss (dB) Linear Gain (dB) Gain and Input Return Loss vs Frequency of CGH25120F in Broadband Amplifier Circuit VDD = 28 V,ofIDQ = 0.5 A Sparameters CGH25120F -25 Return Loss 0 -30 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 Frequency (GHz) Typical Mobile WiMAX Digital Pre-Distortion (DPD) Performance WiMAX Characteristics with and without DPD Correction ACLR and Drain Efficiency vs Output Power measured in CGH25120F-AMP Amplifier Circuit. CGH25120F WiMAX Transfer with and without DPD correction VdsI = 28V, Ids =A, 500Frequency mA, Frequency = GHzGHz VDS = 28 V, = 0.5 =2.5 2.5 DS -25 ACLR (dBc) -30 UnCorrected -ACLR UnCorrected +ACLR Corrected -ACLR Corrected +ACLR UnCorrected Eff Corrected Eff 50 45 40 -35 35 -40 30 -45 25 -50 20 -55 15 -60 10 -65 5 -70 Drain Efficiency (%) -20 0 15 20 25 30 35 40 45 Output Power (dBm) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Pulse Performance Typical Pulse Characteristics Output Power, Drain Efficiency, and Gain vs Input Power measured in CGH25120F-AMP Amplifier Circuit. VDS = 28 V, IDS = 0.5 A, Freq = 2.5 GHz, Pulse Width = 40 μS, Duty Cycle = 5 % 80 18 Output Power 70 17 Drain Efficiency Gain 16 Gain 50 15 Output Power 40 14 30 Gain (dB) Output Power (dBm) Drain Efiiciency(%) 60 13 20 12 Efficiency 10 11 0 10 0 5 10 15 20 25 30 35 40 Input Power (dBm) Typical Pulsed Saturated Power vs Frequency measured in CGH25120F-AMP Amplifier Circuit. A, PSAT = Pulsed 10 mASaturated IGS Peak, Pulse Width = 40 μS, Duty Cycle = 5 % VDS = 28 V, IDS = 0.5 CGH25120 Output Power vs Frequency 53 80 Psat 76 Drain Efficiency 51 72 50 68 49 64 48 60 47 Drain Efficiency (%) Saturated Output Power (dBm) 52 56 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 Frequency (GHz) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH25120F VDD = 28 V, IDQ = 500 mA Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH25120F VDD = 28 V, IDQ = 500 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2300 6.80 - j12.19 4.38 - j1.42 2350 6.42 - j11.89 4.39 - j1.36 2400 6.05 - j11.61 4.39 - j1.33 2450 5.71 - j11.34 4.36 - j1.32 2500 5.37 - j11.08 4.31 - j1.33 2550 5.04 - j10.83 4.23 - j1.34 2600 4.71 - j10.57 4.11 - j1.36 2650 4.39 - j10.31 3.98 - j1.37 2700 4.07 - j10.04 3.80 - j1.36 Note1: VDD = 28V, IDQ = 500mA. In the 440162 package. Note2: Impedances are extracted from CGH25120F-AMP demonstration circuit and are not source and load pull data derived from transistor. CGH25120F Power Dissipation De-rating Curve CGH25120F Average Power Dissipation De-rating Curve 70 60 Power Dissipation (W) 50 40 30 Note 1 20 10 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH25120F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16 W, 0603, 1%, 150 OHMS R2 RES, 1/16 W, 0603, 1%, 5.1 OHMS 1 C1 CAP, 6.8 pF, +/-0.25 pF, 0603, ATC600S 1 CAP, 27 pF, +/-5%, 0603, ATC600S 1 C2 C3,C9,C15 C4,C10 C5,C11 C6,C12,C16 C7 1 CAP, 8.2 pF, +/-0.25 pF, 0603, ATC600S 3 CAP, 82.0 pF, +/-5%, 0603, ATC600S 2 CAP, 470 pF, 5%, 100V, 0603, X7R 2 CAP, 33000 pF, 0805, 100V, X7R 3 CAP, 10 UF, 16V, TANTALUM 1 C8 CAP, 24 pF, +/-5%, 0603, ATC600S 1 C13,C17 CAP, 1.0 UF, 100V, 10%, X7R, 1210 2 C14 CAP, 100 UF, +/-20%, 160V, ELECTROLYTIC 1 J1,J2 CONN, N-Type, Female, 0.500 SMA Flange 2 J3 CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS 1 - PCB, RO4350, Er = 3.48, h = 20 mil 1 - CGH25120F 1 CGH25120F-AMP Demonstration Amplifier Circuit Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH25120F-AMP Demonstration Amplifier Circuit Schematic CGH25120F-AMP Demonstration Amplifier Circuit Outline Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH25120 (Small Signal, VDS = 28 V, IDQ = 500 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.970 179.55 3.23 65.19 0.006 -19.55 0.697 -171.85 600 MHz 0.969 178.04 2.71 59.73 0.006 -23.92 0.712 -171.11 700 MHz 0.969 176.68 2.35 54.43 0.006 -28.13 0.728 -170.54 800 MHz 0.968 175.39 2.08 49.24 0.006 -32.20 0.744 -170.15 900 MHz 0.967 174.12 1.88 44.13 0.006 -36.17 0.760 -169.90 1.0 GHz 0.965 172.86 1.73 39.07 0.006 -40.07 0.776 -169.80 1.1 GHz 0.963 171.57 1.62 34.02 0.007 -43.93 0.792 -169.82 1.2 GHz 0.961 170.24 1.53 28.94 0.007 -47.79 0.808 -169.93 1.3 GHz 0.957 168.86 1.47 23.78 0.007 -51.71 0.823 -170.13 1.4 GHz 0.953 167.39 1.43 18.47 0.007 -55.72 0.838 -170.41 1.5 GHz 0.948 165.84 1.41 12.95 0.007 -59.92 0.853 -170.74 1.6 GHz 0.941 164.19 1.40 7.11 0.008 -64.38 0.868 -171.14 1.7 GHz 0.932 162.42 1.41 0.85 0.008 -69.21 0.882 -171.61 1.8 GHz 0.921 160.54 1.44 -5.98 0.009 -74.56 0.897 -172.16 1.9 GHz 0.906 158.55 1.49 -13.54 0.009 -80.57 0.912 -172.82 2.0 GHz 0.887 156.51 1.54 -22.02 0.010 -87.43 0.928 -173.62 2.1 GHz 0.863 154.51 1.61 -31.62 0.011 -95.34 0.943 -174.61 2.2 GHz 0.836 152.72 1.68 -42.48 0.012 -104.43 0.956 -175.83 2.3 GHz 0.807 151.32 1.73 -54.61 0.012 -114.71 0.966 -177.27 2.4 GHz 0.782 150.41 1.76 -67.78 0.013 -125.92 0.970 -178.85 2.5 GHz 0.767 149.70 1.74 -81.50 0.013 -137.58 0.968 179.58 2.6 GHz 0.765 148.57 1.69 -95.15 0.013 -149.05 0.960 178.22 2.7 GHz 0.772 146.34 1.61 -108.22 0.012 -159.82 0.948 177.17 2.8 GHz 0.784 142.57 1.52 -120.49 0.012 -169.67 0.937 176.41 2.9 GHz 0.795 137.00 1.43 -132.07 0.012 -178.68 0.926 175.88 3.0 GHz 0.802 129.35 1.37 -143.26 0.011 172.84 0.918 175.48 3.2 GHz 0.800 105.38 1.29 -166.46 0.011 155.52 0.907 174.80 3.4 GHz 0.786 62.35 1.25 164.88 0.011 133.38 0.901 174.02 3.6 GHz 0.824 -2.68 1.08 128.15 0.010 103.76 0.897 172.96 3.8 GHz 0.913 -61.31 0.73 93.46 0.007 76.68 0.890 171.72 4.0 GHz 0.963 -96.70 0.45 69.63 0.005 60.78 0.881 170.41 4.2 GHz 0.983 -116.99 0.29 53.87 0.003 53.02 0.872 168.93 4.4 GHz 0.992 -129.53 0.19 42.45 0.002 49.41 0.860 167.19 4.6 GHz 0.995 -137.94 0.14 33.27 0.002 47.62 0.844 165.11 4.8 GHz 0.997 -143.97 0.10 25.19 0.002 46.36 0.823 162.61 5.0 GHz 0.998 -148.50 0.08 17.50 0.001 44.82 0.793 159.54 5.2 GHz 0.999 -152.04 0.07 9.61 0.001 42.41 0.751 155.74 5.4 GHz 0.999 -154.90 0.06 0.93 0.001 38.57 0.688 150.96 5.6 GHz 0.999 -157.26 0.05 -9.20 0.001 32.67 0.594 145.02 5.8 GHz 0.999 -159.26 0.04 -21.62 0.001 23.98 0.453 138.33 6.0 GHz 1.000 -160.97 0.04 -36.99 0.001 11.87 0.251 136.18 To download the s-parameters in s2p format, go to the CGH25120F Product Page and click on the documentation tab. Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH25120F (Package Type — 440162) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH25120F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH25120F-TB CGH25120F-AMP Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH25120F Rev 3.1 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH25120F Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf