CGH25120F, 120W, 20W AVERAGE POWER, 2300

CGH25120F
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
Cree’s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier
applications. The transistor is supplied in a ceramic/metal flange package.
Package Type
: 440162
PN: CGH2512
0F
Typical Performance Over 2.3-2.7GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Units
Gain @ 43 dBm
12.5
12.8
13.1
13.5
13.6
dB
ACLR @ 43 dBm
-32.7
-34.0
-32.5
-29.5
-25.8
dBc
Drain Efficiency @ 43 dBm
26.5
28.0
30.0
32.5
34.5
%
Note:
Measured in the CGH25120F-AMP amplifier circuit, under equivalent 802.16e WiMAX signal, 10 MHz Bandwidth,
PAR = 9.6 dB @ 0.01 % Probability on CCDF.
Features
2.3 - 2.7 GHz Operation
•
13 dB Gain
•
-32 dBc ACLR at 20 W PAVE
•
30 % Efficiency at 20 W PAVE
•
High Degree of DPD Correction Can be Applied
2015
Rev 3.1 - June
•
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDSS
84
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Power Dissipation
PDISS
56
Watts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
30
mA
25˚C
Maximum Drain Current1
IDMAX
12
A
25˚C
Soldering Temperature2
TS
245
˚C
Screw Torque
Thermal Resistance, Junction to Case3
Case Operating Temperature
3
τ
80
in-oz
RθJC
1.5
˚C/W
TC
-40, +150
˚C
Units
85˚C
Note:
Current limit for long term, reliable operation.
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH25120F at PDISS = 56 W.
1
2
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 28.8 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 0.5 A
Saturated Drain Current2
IDS
23.2
28.0
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 28.8 mA
DC Characteristics1
RF Characteristics (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Saturated Output Power3,4,5
PSAT
–
130
–
W
VDD = 28 V, IDQ = 0.5 A,
Pulsed Drain Efficiency3,5
η
–
60
–
%
VDD = 28 V, IDQ = 0.5 A, POUT = PSAT
Gain6
G
10.5
12.5
–
dB
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
ACLR
–
-31
-27
dBc
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
η
27
32
–
%
VDD = 28 V, IDQ = 0.5 A, POUT = 43 dBm
VSWR
–
–
10 : 1
Y
No damage at all phase angles, VDD = 28 V, IDQ
= 1.0 A, POUT = 20 W CW
CGS
–
88
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
12
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
1.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
WiMAX Linearity6,7
Drain Efficiency6
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance8
8
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Pulse Width = 40 μS, Duty Cycle = 5 %.
4
PSAT is defined as IG = 10 mA peak.
5
Measured in CGH25120F-AMP
6
Equivalent 802.16e WiMAX signal, 10 MHz Bandwidth, PAR = 9.6 dB @ 0.01% Probability on CCDF.
7
Measured over 10 MHz bandwidth at 10 MHz offset from carrier edge.
8
Includes package and internal matching components.
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
18
0
15
-5
12
-10
9
-15
6
-20
Gain
3
Return Loss (dB)
Linear Gain (dB)
Gain and Input Return Loss vs Frequency of CGH25120F in Broadband Amplifier Circuit
VDD = 28 V,ofIDQ
= 0.5 A
Sparameters
CGH25120F
-25
Return Loss
0
-30
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
Typical Mobile WiMAX Digital Pre-Distortion (DPD) Performance
WiMAX Characteristics with and without DPD Correction
ACLR and Drain Efficiency vs Output Power
measured
in CGH25120F-AMP Amplifier Circuit.
CGH25120F WiMAX Transfer with and without DPD correction
VdsI = 28V,
Ids =A,
500Frequency
mA, Frequency =
GHzGHz
VDS = 28 V,
= 0.5
=2.5
2.5
DS
-25
ACLR (dBc)
-30
UnCorrected -ACLR
UnCorrected +ACLR
Corrected -ACLR
Corrected +ACLR
UnCorrected Eff
Corrected Eff
50
45
40
-35
35
-40
30
-45
25
-50
20
-55
15
-60
10
-65
5
-70
Drain Efficiency (%)
-20
0
15
20
25
30
35
40
45
Output Power (dBm)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Pulse Performance
Typical Pulse Characteristics Output Power, Drain Efficiency, and Gain vs Input Power
measured in CGH25120F-AMP Amplifier Circuit.
VDS = 28 V, IDS = 0.5 A, Freq = 2.5 GHz, Pulse Width = 40 μS, Duty Cycle = 5 %
80
18
Output Power
70
17
Drain Efficiency
Gain
16
Gain
50
15
Output Power
40
14
30
Gain (dB)
Output Power (dBm)
Drain Efiiciency(%)
60
13
20
12
Efficiency
10
11
0
10
0
5
10
15
20
25
30
35
40
Input Power (dBm)
Typical Pulsed Saturated Power vs Frequency
measured in CGH25120F-AMP Amplifier Circuit.
A, PSAT = Pulsed
10 mASaturated
IGS Peak,
Pulse
Width
= 40 μS, Duty Cycle = 5 %
VDS = 28 V, IDS = 0.5 CGH25120
Output
Power
vs Frequency
53
80
Psat
76
Drain Efficiency
51
72
50
68
49
64
48
60
47
Drain Efficiency (%)
Saturated Output Power (dBm)
52
56
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
Frequency (GHz)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
K Factor
MAG (dB)
Simulated Maximum Available Gain and K Factor of the CGH25120F
VDD = 28 V, IDQ = 500 mA
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH25120F
VDD = 28 V, IDQ = 500 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
II (200 < 500 V)
JEDEC JESD22 C101-C
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
Z Load
2300
6.80 - j12.19
4.38 - j1.42
2350
6.42 - j11.89
4.39 - j1.36
2400
6.05 - j11.61
4.39 - j1.33
2450
5.71 - j11.34
4.36 - j1.32
2500
5.37 - j11.08
4.31 - j1.33
2550
5.04 - j10.83
4.23 - j1.34
2600
4.71 - j10.57
4.11 - j1.36
2650
4.39 - j10.31
3.98 - j1.37
2700
4.07 - j10.04
3.80 - j1.36
Note1: VDD = 28V, IDQ = 500mA. In the 440162 package.
Note2: Impedances are extracted from CGH25120F-AMP demonstration circuit
and are not source and load pull data derived from transistor.
CGH25120F Power Dissipation De-rating
Curve
CGH25120F Average Power Dissipation De-rating Curve
70
60
Power Dissipation (W)
50
40
30
Note 1
20
10
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH25120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 1/16 W, 0603, 1%, 150 OHMS
R2
RES, 1/16 W, 0603, 1%, 5.1 OHMS
1
C1
CAP, 6.8 pF, +/-0.25 pF, 0603, ATC600S
1
CAP, 27 pF, +/-5%, 0603, ATC600S
1
C2
C3,C9,C15
C4,C10
C5,C11
C6,C12,C16
C7
1
CAP, 8.2 pF, +/-0.25 pF, 0603, ATC600S
3
CAP, 82.0 pF, +/-5%, 0603, ATC600S
2
CAP, 470 pF, 5%, 100V, 0603, X7R
2
CAP, 33000 pF, 0805, 100V, X7R
3
CAP, 10 UF, 16V, TANTALUM
1
C8
CAP, 24 pF, +/-5%, 0603, ATC600S
1
C13,C17
CAP, 1.0 UF, 100V, 10%, X7R, 1210
2
C14
CAP, 100 UF, +/-20%, 160V, ELECTROLYTIC
1
J1,J2
CONN, N-Type, Female, 0.500 SMA Flange
2
J3
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
1
-
PCB, RO4350, Er = 3.48, h = 20 mil
1
-
CGH25120F
1
CGH25120F-AMP Demonstration Amplifier Circuit
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGH25120F-AMP Demonstration Amplifier Circuit Schematic
CGH25120F-AMP Demonstration Amplifier Circuit Outline
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH25120
(Small Signal, VDS = 28 V, IDQ = 500 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.970
179.55
3.23
65.19
0.006
-19.55
0.697
-171.85
600 MHz
0.969
178.04
2.71
59.73
0.006
-23.92
0.712
-171.11
700 MHz
0.969
176.68
2.35
54.43
0.006
-28.13
0.728
-170.54
800 MHz
0.968
175.39
2.08
49.24
0.006
-32.20
0.744
-170.15
900 MHz
0.967
174.12
1.88
44.13
0.006
-36.17
0.760
-169.90
1.0 GHz
0.965
172.86
1.73
39.07
0.006
-40.07
0.776
-169.80
1.1 GHz
0.963
171.57
1.62
34.02
0.007
-43.93
0.792
-169.82
1.2 GHz
0.961
170.24
1.53
28.94
0.007
-47.79
0.808
-169.93
1.3 GHz
0.957
168.86
1.47
23.78
0.007
-51.71
0.823
-170.13
1.4 GHz
0.953
167.39
1.43
18.47
0.007
-55.72
0.838
-170.41
1.5 GHz
0.948
165.84
1.41
12.95
0.007
-59.92
0.853
-170.74
1.6 GHz
0.941
164.19
1.40
7.11
0.008
-64.38
0.868
-171.14
1.7 GHz
0.932
162.42
1.41
0.85
0.008
-69.21
0.882
-171.61
1.8 GHz
0.921
160.54
1.44
-5.98
0.009
-74.56
0.897
-172.16
1.9 GHz
0.906
158.55
1.49
-13.54
0.009
-80.57
0.912
-172.82
2.0 GHz
0.887
156.51
1.54
-22.02
0.010
-87.43
0.928
-173.62
2.1 GHz
0.863
154.51
1.61
-31.62
0.011
-95.34
0.943
-174.61
2.2 GHz
0.836
152.72
1.68
-42.48
0.012
-104.43
0.956
-175.83
2.3 GHz
0.807
151.32
1.73
-54.61
0.012
-114.71
0.966
-177.27
2.4 GHz
0.782
150.41
1.76
-67.78
0.013
-125.92
0.970
-178.85
2.5 GHz
0.767
149.70
1.74
-81.50
0.013
-137.58
0.968
179.58
2.6 GHz
0.765
148.57
1.69
-95.15
0.013
-149.05
0.960
178.22
2.7 GHz
0.772
146.34
1.61
-108.22
0.012
-159.82
0.948
177.17
2.8 GHz
0.784
142.57
1.52
-120.49
0.012
-169.67
0.937
176.41
2.9 GHz
0.795
137.00
1.43
-132.07
0.012
-178.68
0.926
175.88
3.0 GHz
0.802
129.35
1.37
-143.26
0.011
172.84
0.918
175.48
3.2 GHz
0.800
105.38
1.29
-166.46
0.011
155.52
0.907
174.80
3.4 GHz
0.786
62.35
1.25
164.88
0.011
133.38
0.901
174.02
3.6 GHz
0.824
-2.68
1.08
128.15
0.010
103.76
0.897
172.96
3.8 GHz
0.913
-61.31
0.73
93.46
0.007
76.68
0.890
171.72
4.0 GHz
0.963
-96.70
0.45
69.63
0.005
60.78
0.881
170.41
4.2 GHz
0.983
-116.99
0.29
53.87
0.003
53.02
0.872
168.93
4.4 GHz
0.992
-129.53
0.19
42.45
0.002
49.41
0.860
167.19
4.6 GHz
0.995
-137.94
0.14
33.27
0.002
47.62
0.844
165.11
4.8 GHz
0.997
-143.97
0.10
25.19
0.002
46.36
0.823
162.61
5.0 GHz
0.998
-148.50
0.08
17.50
0.001
44.82
0.793
159.54
5.2 GHz
0.999
-152.04
0.07
9.61
0.001
42.41
0.751
155.74
5.4 GHz
0.999
-154.90
0.06
0.93
0.001
38.57
0.688
150.96
5.6 GHz
0.999
-157.26
0.05
-9.20
0.001
32.67
0.594
145.02
5.8 GHz
0.999
-159.26
0.04
-21.62
0.001
23.98
0.453
138.33
6.0 GHz
1.000
-160.97
0.04
-36.99
0.001
11.87
0.251
136.18
To download the s-parameters in s2p format, go to the CGH25120F Product Page and click on the documentation tab.
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH25120F (Package Type ­— 440162)
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH25120F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH25120F-TB
CGH25120F-AMP
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH25120F Rev 3.1
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf