CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal pill and flange packages. Package Type : 440162 and 440161 PN: CGHV271 00F and CGH V27100P Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Gain @ 44 dBm 18.1 18.0 17.9 dB ACLR @ 44 dBm -37.0 -37.0 -37.0 dBc Drain Efficiency @ 44 dBm 34.0 33.5 32.0 % Note: Measured in the CGHV27100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 500 mA. Features 2.5 - 2.7 GHz Operation • 18.0 dB Gain • -37 dBc ACLR at 25 W PAVE • 33 % Efficiency at 25 W PAVE • High Degree of DPD Correction Can be Applied 15 Rev 1.0 – May 20 • Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Symbol Rating Units Conditions VDSS 125 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 16 mA 25˚C Maximum Drain Current1 IDMAX 6 A 25˚C Soldering Temperature2 TS 245 ˚C τ 80 in-oz Thermal Resistance, Junction to Case3 RθJC 2.34 ˚C/W 85˚C, PDISS = 48 W Thermal Resistance, Junction to Case RθJC 2.95 ˚C/W 85˚C, PDISS = 48 W TC -40, +150 ˚C Screw Torque 4 Case Operating Temperature5 Note: Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV27100P 4 Measured for the CGHV27100F 5 See also, the Power Dissipation De-rating Curve on Page 5. 1 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 500 mA Saturated Drain Current2 IDS 12 14.4 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 16 mA DC Characteristics1 VDS = 10 V, ID = 16 mA RF Characteristics (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted) 5 PSAT – 135 – W VDD = 50 V, IDQ = 500 mA η – 68 – % VDD = 50 V, IDQ = 500 mA, POUT = PSAT G – 18 – dB VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm ACLR – -37 – dBc VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm η – 33 – % VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 500 mA, POUT = 100 W Pulsed CGS – 66 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 8.7 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.47 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Saturated Output Power3,4 Pulsed Drain Efficiency 3,4 Gain 6 WCDMA Linearity6 Drain Efficiency6 Output Mismatch Stress3 Dynamic Characteristics Input Capacitance7 7 Notes: Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 100 µs, Duty Cycle = 10% 4 PSAT is defined as IGS = 1.6 mA peak 5 Measured in CGHV27100-AMP 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V. 7 Includes package and internal matching components. 1 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV27100 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - Small Signal Gain and Return Losses vs Frequency for the CGHV27100 measured in CGHV27100-AMP Amplifier Circuit VDD = 50 V, IDQ = 0.5 A 25 20 15 Magnitude (dB) 10 5 0 -5 -10 S11 -15 S21 S22 -20 2.0 2.1 2.2 2.3 2.4 2.5 2.6 Frequency (GHz) 2.7 2.8 2.9 3.0 Typical Linear Performance Figure 2. - Typical Gain, Drain Efficiency and ACLR vs Output Power of the CGHV27100 measured in CGHV27100-AMP Amplifier Circuit VDS = 50 V, IDS = 0.5 A, 1c WCDMA, PAR = 7.5 dB 0 50 -10 -15 ACLR (dBc) 45 2.5GHz ACPR 2.6GHz ACPR 2.7GHz ACPR 2.5GHz Drain Efficiency 2.6GHz Drain Efficiency 2.7GHz Drain Efficiency 2.5GHz Gain 2.6GHz Gain 2.7GHz Gain -20 40 35 30 -25 25 -30 20 -35 15 -40 10 -45 5 -50 28 30 32 34 36 38 40 Output Power (dBm) 42 44 46 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV27100 Rev 1.0 48 Drain Efficiency (%) & Gain (dB) -5 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance 50 -30 45 -31 40 -32 35 -33 30 -34 25 -35 20 -36 15 -37 Gain 10 -38 Drain Efficiency 5 -39 ACLR 0 2.40 2.45 2.50 2.55 2.60 ACLR (dBc) Gain (dB) & Drain Efficiency (%) Figure 3. - Typical Gain, Drain Efficiency and ACLR vs Frequency of the CGHV27100 measured in CGHV27100-AMP Amplifier Circuit. VDS = 50 V, IDS = 0.5 A, PAVE = 25 W, 1c WCDMA, PAR = 7.5 dB 2.65 2.70 2.75 -40 2.80 Frequency (GHz) Figure 4. - Typical Two Tone Linearity vs Output Power of the CGHV27100 measured in CGHV27100-AMP1 Amplifier CGHV27100F IMDCircuit. Sweep VDS = 50 V, IDS = 0.5 A 0 Intermodulation Distortion (dBc) -10 -20 -30 -40 -50 -IMD3 -60 +IMD3 -IMD5 +IMD5 -70 -IMD7 +IMD7 -80 20 25 30 35 Output Power (dBm) 40 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV27100 Rev 1.0 45 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 5. - Power Dissipation Derating Curve 50 45 440161 Package 40 440162 Package 35 Power Dissipation (W) 30 Note 1 25 20 15 10 5 0 0 25 50 75 100 125 150 Maximum Case Temperature ( C) 175 200 225 250 Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2500 4.01 - j3.88 10.69 - j2.86 2600 3.99 - j3.29 11.16 - j3.17 2700 4.01 - j2.72 11.67 - j3.94 Note1: VDD = 50 V, IDQ = 500 mA. In the 440162 package. Note2: Impedances are extracted from CGHV27100-AMP demonstration circuit and are not source and load pull data derived from transistor. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV27100 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27100-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1, R2 RES, 10 OHM, +/- 1%, 1/16 W, 0603 2 C1 CAP, 5.6 pF, +/- 0.25 pF, 0603, ATC 1 C2 CAP, 27 pF, +/-5%, 0603, ATC 1 C3 C8, C13 C4, C9, C14 C5, C10, C15 CAP, 10.0 pF, +/-5%, 0603, ATC 1 CAP, 8.2 pF, +/-0.25 pF, 0603, ATC 2 CAP, 470 pF, 5%, 100 V, 0603, X 3 CAP, 33000 pF, 0805, 100 V, X7R 3 C6 CAP, 10 UF, 16 V, TANTALUM 1 C7 CAP, 27 pF, +/-5%, 250 V, 0805, ATC 600 F 1 C11, C16 CAP, 1.0 UF, 100 V, 10%, X7R, 1210 2 C12 CAP, 100 UF, +/-20%, 160 V, ELECTROLYTIC 1 C17 CAP, 33 UF, 20%, ELECTROLYTIC 1 CONN, SMA 2 HEADER RT>PLZ.1CEN LK 9POS 1 PCB, RO4350, 0.020” THK, CGHV27100F 1 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CGHV27100F 1 J1, J2 J3 CGHV27100-AMP Demonstration Amplifier Circuit Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV27100 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27100-AMP Demonstration Amplifier Circuit Schematic Vg=-2.0V to -3.5V typ GND Vd=+50V 9 C6 10 C5 0.033 C4 470 pF 8 6 7 5 4 C3 10 pF 3 2 1 J3 C8 8.2 pF C9 470 pF R2 10 Ohm J1 R1 10 Ohm C11 1 C12 100 C7 27 pF J2 C2 27 pF C1 5.6 pF C10 0.033 2 1 3 C13 8.2 pF C14 470 pF C15 0.033 C16 1 C17 33 CGHV27100-AMP Demonstration Amplifier Circuit Outline Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV27100 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV27100F (Package Type — 440162) Product Dimensions CGHV27100P (Package Type — 440161) Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV27100 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV27100F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 2.7 GHz 100 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV27100 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV27100F GaN HEMT Each CGHV27100P GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV27100-TB CGHV27100F-AMP Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV27100 Rev 1.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV27100 Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf