CGH40180PP - Cree, Inc

CGH40180PP
180 W, RF Power GaN HEMT
Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40180PP ideal for linear
and compressed amplifier circuits. The transistor is available in a 4-lead
flange package.
Package Type
s: 440199
PN: CGH4018
0PP
FEATURES
APPLICATIONS
•
Up to 2.5 GHz Operation
•
2-Way Private Radio
•
20 dB Small Signal Gain at 1.0 GHz
•
Broadband Amplifiers
•
15 dB Small Signal Gain at 2.0 GHz
•
Cellular Infrastructure
•
220 W typical PSAT
•
Test Instrumentation
•
70 % Efficiency at PSAT
•
Class A, AB, Linear amplifiers suitable for
•
28 V Operation
15
Rev 3.0 – May 20
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
VDSS
84
Volts
25˚C
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
VGS
-10, +2
Volts
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
60
mA
25˚C
Maximum Drain Current1
IDMAX
24
A
25˚C
Soldering Temperature2
TS
245
˚C
Screw Torque
Thermal Resistance, Junction to Case3
Case Operating Temperature
3,4
τ
80
in-oz
RθJC
0.9
˚C/W
TC
-40, +150
˚C
85˚C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
CGH40180PP at PDISS = 224 W.
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 57.6 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 28 V, ID = 2.0 A
Saturated Drain Current
IDS
46.4
56.0
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS = -8 V, ID = 57.6 mA
DC Characteristics1
2
RF Characteristics
3,4
(TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
Power Gain
PG
13
-
-
dB
VDD = 28 V, IDQ = 2.0 A, POUT = PSAT
Small Signal Gain
GSS
-
19
–
dB
VDD = 28 V, IDQ = 2.0 A
Power Output at Saturation5
PSAT
180
220
–
W
VDD = 28 V, IDQ = 2.0 A
η
56
65
–
%
VDD = 28 V, IDQ = 2.0 A, POUT = PSAT
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 2.0 A,
POUT = 180 W CW
Input Capacitance
CGS
–
35.7
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS
–
9.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
1.6
–
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Drain Efficiency
6
Output Mismatch Stress
Dynamic Characteristics7
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGH40180PP-AMP, including all coupler losses.
4
IDQ of 2.0 A is by biasing each device at 1.0 A.
5
PSAT is defined as: Q1 or Q2 = IG = 2.8 mA.
6
Drain Efficiency = POUT / PDC
7
Capacitance values are for each side of the device.
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Gain and Return Loss vs Frequency measured in
Broadband Amplifier Circuit CGH40180PP-AMP
VDD = 28 V,S-parameter
IDQ = 2.0 A,CGH40180PP
Freq = 0.8 - 1.7 GHz
24
10
21
5
18
0
15
-5
S11
12
-10
S11 (dB)
S21 (dB)
S21
-15
9
S21
-20
6
S11
-25
3
0
800
900
1000
1100
1200
1300
1400
1500
-30
1700
1600
Frequency (MHz)
Output Power and Drain Efficiency vs Frequency
measured in Broadband Amplifier Circuit CGH40180PP-AMP
VDD
= Efficiency
28 V, IDQ vs
= Frequency
2.0 A
Power
and
250
100%
Psat
90%
220
80%
205
70%
Drain Efficiency
190
60%
175
50%
160
40%
145
Psat
30%
130
Efficiency
20%
115
100
1100
Drain Efficiency
Output Power (W)
235
10%
1150
1200
1250
0%
1300
Frequency (MHz)
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Gain and Drain Efficiency vs Output Power measured
in Broadband Amplifier Circuit CGH40180PP-AMP
VDD = 28 V, IDQ = 2.0 A
22
80%
20
gain 1100
gain 1150
gain 1200
gain 1250
gain 1300
eff 1100
eff 1150
eff 1200
eff 1250
eff 1300
70%
18
60%
16
50%
14
40%
Drain
Efficiency
12
30%
10
20%
8
10%
6
Drain Efficiency
Gain (dB)
Gain
0%
30
32
34
36
38
40
42
44
46
48
50
52
54
Output Power (dBm)
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
K Factor
MAG (dB)
Simulated Maximum Available Gain and K Factor of the CGH40180PP
VDD = 28 V, IDQ = 1.0 A
Typical Noise Performance
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40180PP
VDD = 28 V, IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A > 250 V
JEDEC JESD22 A114-D
Charge Device Model
CDM
1 < 200 V
JEDEC JESD22 C101-C
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
CGH40180PP Power Dissipation De-rating Curve
CGH40180PP CW Power Dissipation De-rating Curve
250
Power Dissipation (W)
200
150
100
Note 1
50
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
CGH40180PP Transient Power Dissipation De-rating Curve
CGH40180PP Transient Power Dissipation De-Rating Curve
250
Power Dissipation (W)
200
150
100
Note 1
50
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Note 2. This transient de-rating curve assumes a 1msec pulse with a 20% duty cycle
with no power dissipated during the “off-cycle.”
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Thermal Resistance as a Function of Pulse Width
Heating Curve for 2x28.8mm GaN HEMT in 440199 Package at 4W/mm
1.0
0.9
0.8
Rth (C/W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.00E-08
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
Time (seconds)
Note 1: This heating curve assumes zero power dissipation during the “off” portion of the duty cycle.
Note 2: This data is for transient power dissipation at 224 W, Duty Cycle = 20 %.
Simulated Source and Load Impedances
D1
Z Source 1
Z Load 1
G1
S
G2
Z Source 2
Z Load 2
D2
Frequency (MHz)
Z Source
Z Load
500
2.85 + j1.99
5.27 + j0.68
1000
0.8 + j0.42
4.91 + j0.36
1500
0.84 - j1.69
4.65 - j0.24
2000
0.88 - j3.05
2.8 - j1.05
2500
1.08 - j4.5
3.1 - j2.47
3000
1.25 - j6.06
3.1 - j4.01
Note 1. VDD = 28V, IDQ = 2.0 A in the 440199 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be used to
maintain amplifier stability.
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
CGH40180PP-AMP Demonstration Amplifier Circuit Schematic
CGH40180PP-AMP Demonstration Amplifier Circuit Outline
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
CGH40180PP-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
R1
Description
Qty
RES, 100 Ohm, +/-1%, 1 W, 2512
1
R10,R20
RES, 511 Ohm, +/- 5%, 1/16W, 0603
2
R30,R40
RES, 1/16W, 0603, 1%, 5.1 OHMS
2
CAP, 27 pF,+/-5% 0805,ATC600F
8
C10,C11,C13,C14,C20,C21,C23,C24
C1,C2,C3,C4,C30,C40,C70,C80
CAP, 3.9PF, +/-0.1 pF, 0603, ATC600S
8
C12,C22
CAP, 3.3PF, +/-0.1 pF, 0603, ATC600S
2
C15,C19,C25,C29
CAP, 1.8PF, +/-0.1 pF, 0603, ATC600S
4
C16,C26
CAP, 1.0PF, +/-0.1 pF, 0603, ATC600S
2
C17,C27
CAP, 0.9PF, +/-0.1 pF, 0603, ATC600S
2
C31,C41
CAP, 100 pF,+/-5%, 0603,ATC600S
2
C32,C42
CAP, 470 pF, 5%, 100V, 0603, X7R
2
CAP, 33000 pF, 0805, 100V, X7R
4
CAP, 10 uF, 16V, TANTALUM
2
C50,C51,C60,C61
CAP, 5.6 pF, +/-0.1 pF, 0805, ATC600F
4
C52,C62
CAP, 2.7 pF, +/-0.1 pF, 0805, ATC600F
2
C53,C63
CAP, 2.2 pF, +/-0.1 pF, 0805, ATC600F
2
C54,C64
CAP, 1.1 pF, +/-0.05 pF, 0805, ATC600F
2
C55,C65
CAP, 0.5 pF, +/-0.05 pF, 0805, ATC600F
2
C73,C83
CAP, 1.0 uF, +/-10%, 1210, 100V, X7R
2
C74,C84
CAP, 33 uF, 100V, ELECT, FK, SMD
2
L10,L20
IND, 6.8 nH, 0603, L-14C6N8ST
2
L30,L40
FERRITE, 220 OHM, 0603, BLM21PG221SN1
2
J1,J2
CONN, N-Type, Female, 0.500 SMA Flange
2
J3,J4
CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS
2
PCB, RO4350, Er = 3.48, h = 20 mil
1
CGH40180PP
1
C34,C44,C72,C82
C35,C45
Q1
CGH40180PP-AMP Demonstration Amplifier Circuit
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Typical Package S-Parameters for CGH40180PP, Single Side
(Small Signal, VDS = 28 V, IDQ = 1000 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
0.957
-177.48
4.22
79.26
0.007
10.74
0.798
-179.16
600 MHz
0.957
-178.74
3.51
76.30
0.007
12.14
0.800
-179.41
700 MHz
0.957
-179.78
3.00
73.47
0.007
13.71
0.802
-179.63
800 MHz
0.957
179.32
2.62
70.74
0.007
15.38
0.804
-179.84
900 MHz
0.957
178.51
2.33
68.08
0.007
17.15
0.807
179.96
1.0 GHz
0.957
177.76
2.09
65.49
0.007
18.99
0.809
179.74
1.1 GHz
0.957
177.06
1.90
62.95
0.007
20.87
0.812
179.52
1.2 GHz
0.957
176.38
1.73
60.46
0.007
22.80
0.814
179.28
1.3 GHz
0.957
175.72
1.60
58.02
0.008
24.73
0.817
179.03
1.4 GHz
0.956
175.08
1.48
55.63
0.008
26.66
0.820
178.76
1.5 GHz
0.956
174.44
1.38
53.29
0.008
28.57
0.823
178.46
1.6 GHz
0.956
173.81
1.29
50.98
0.008
30.44
0.825
178.15
1.7 GHz
0.956
173.18
1.22
48.72
0.008
32.25
0.828
177.82
1.8 GHz
0.955
172.55
1.15
46.50
0.009
33.98
0.831
177.47
1.9 GHz
0.955
171.91
1.09
44.32
0.009
35.62
0.833
177.10
2.0 GHz
0.955
171.27
1.04
42.17
0.009
37.17
0.835
176.71
2.1 GHz
0.954
170.62
0.99
40.06
0.010
38.61
0.838
176.30
2.2 GHz
0.954
169.96
0.95
37.98
0.010
39.93
0.840
175.87
2.3 GHz
0.953
169.29
0.91
35.93
0.011
41.14
0.842
175.42
2.4 GHz
0.952
168.60
0.87
33.91
0.011
42.22
0.844
174.95
2.5 GHz
0.952
167.90
0.84
31.92
0.012
43.18
0.845
174.47
2.6 GHz
0.951
167.18
0.82
29.95
0.013
44.01
0.847
173.96
2.7 GHz
0.950
166.45
0.79
28.00
0.013
44.73
0.848
173.44
2.8 GHz
0.949
165.69
0.77
26.07
0.014
45.32
0.849
172.89
2.9 GHz
0.948
164.91
0.75
24.15
0.015
45.79
0.850
172.33
3.0 GHz
0.946
164.10
0.73
22.24
0.016
46.15
0.850
171.74
3.2 GHz
0.943
162.39
0.71
18.45
0.018
46.53
0.851
170.51
3.4 GHz
0.939
160.55
0.69
14.64
0.020
46.47
0.850
169.19
3.6 GHz
0.935
158.53
0.67
10.80
0.023
45.97
0.848
167.76
3.8 GHz
0.929
156.31
0.67
6.86
0.027
45.03
0.845
166.21
4.0 GHz
0.922
153.83
0.67
2.78
0.031
43.63
0.841
164.53
4.2 GHz
0.913
151.03
0.68
-1.51
0.036
41.72
0.834
162.69
4.4 GHz
0.901
147.82
0.69
-6.12
0.042
39.23
0.825
160.65
4.6 GHz
0.886
144.10
0.72
-11.16
0.049
36.07
0.813
158.39
4.8 GHz
0.866
139.68
0.76
-16.81
0.059
32.05
0.797
155.86
5.0 GHz
0.838
134.36
0.81
-23.30
0.073
26.92
0.775
153.00
5.2 GHz
0.799
127.78
0.88
-30.99
0.091
20.30
0.747
149.76
5.4 GHz
0.742
119.49
0.97
-40.41
0.117
11.55
0.708
146.16
5.6 GHz
0.658
108.92
1.08
-52.33
0.157
-0.34
0.657
142.31
5.8 GHz
0.534
95.85
1.21
-67.76
0.219
-16.90
0.594
138.62
6.0 GHz
0.373
82.93
1.34
-87.69
0.321
-40.38
0.534
134.70
To download the s-parameters in s2p format, go to the CGH40180PP Product Page and click on the documentation tab.
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGH40180PP (Package Type —
­ 440199)
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGH40180PP
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGH40180PP-TB
CGH40180PP-AMP
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGH40180PP Rev 3.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
13
CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf