Preliminary Data Sheet μPG2411T6R R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 GaAs Integrated Circuit SPDT Switch for 1 GHz to 8 GHz DESCRIPTION The μPG2411T6R is a GaAs MMIC SPDT (Single Pole Double Throw) switch which was designed for 1 GHz to 8 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 1.8 to 3.6 V and can operate at frequencies from 1 GHz to 8 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) and is suitable for highdensity surface mounting. FEATURES • Switch control voltage • • • • : Vcont (H) = 1.8 to 3.6 V (3.0 V TYP.) : Vcont (L) = 0 V TYP. Low insertion loss : Lins = 0.5 dB TYP. @ f = 2.5 GHz : Lins = 0.6 dB TYP. @ f = 6 GHz High isolation : ISL = 25 dB TYP. @ f = 2 to 6 GHz Handling power : Pin (1 dB) = +30.5 dBm TYP. @ Vcont (H) = 3.0 V, f = 2.5 GHz and 6 GHz : Pin (0.1 dB) = +28 dBm TYP. @ Vcont (H) = 3.0 V, f = 2.5 GHz and 6 GHz High-density surface mounting : 6-pin plastic TSSON package (1.0 × 1.0 × 0.37 mm) APPLICATIONS • Wireless LAN (IEEE802.11a/b/g/n), etc. ORDERING INFORMATION Part Number μPG2411T6R-E2 Order Number μPG2411T6R-E2-A Package 6-pin plastic TSSON (Pb-Free) Marking GC Supplying Form • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPG2411T6R CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 1 of 12 μPG2411T6R PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) 1 GC 2 3 (Bottom View) (Top View) RF1 6 1 Vcont1 6 6 1 5 GND 2 RFC 5 5 2 4 RF2 3 Vcont2 4 4 3 Pin No. Pin Name 1 2 3 4 5 6 RF1 GND RF2 Vcont2 RFC Vcont1 Remark Exposed pad : GND SW TRUTH TABLE ON Path RFC-RF1 RFC-RF2 Vcont1 High Low Vcont2 Low High ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Switch Control Voltage Input Power Power Dissipation Operating Ambient Temperature Storage Temperature Vcont Pin PD TA Tstg +6.0 +31.0 150 −40 to +90 −55 to +150 Note V dBm mW °C °C Note: ⎪Vcont1 − Vcont2⎪ ≤ 6.0 V RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Operating Frequency Switch Control Voltage (H) Switch Control Voltage (L) Control Voltage Difference Symbol f Vcont (H) Vcont (L) ΔVcont (H), ΔVcont (L) MIN. 1.0 1.8 −0.2 −0.1 TYP. − 3.0 0 0 MAX. 8.0 3.6 0.2 0.1 Unit GHz V V V Note Note: ΔVcont (H) = Vcont1 (H) − Vcont2 (H) ΔVcont (L) = Vcont1 (L) − Vcont2 (L) R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 2 of 12 μPG2411T6R ELECTRICAL CHARACTERISTICS 1 (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) Parameter Insertion Loss 1 Insertion Loss 2 Insertion Loss 3 Insertion Loss 4 Isolation 1 (RFC-OFF Port) Isolation 2 (RFC-OFF Port) Isolation 3 (RFC-OFF Port) Isolation 4 (RF1-RF2) Isolation 5 (RF1-RF2) Isolation 6 (RF1-RF2) Return Loss 1 Return Loss 2 Return Loss 3 Return Loss 4 Return Loss 5 0.1 dB Loss Compression Symbol Lins1 Lins2 Lins3 Lins4 ISL1 ISL2 ISL3 ISL4 ISL5 ISL6 RL1 RL2 RL3 RL4 RL5 Pin (0.1 dB) Note1 Input Power 1 dB Loss Compression Note2 Input Power Input 3rd Order Intercept Point Switch Control Current Switch Control Speed Pin (1 dB) IIP3 Icont tSW Test Conditions f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 6.0 GHz f = 6.0 to 8.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 6.0 GHz f = 6.0 to 8.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 6.0 GHz f = 6.0 to 8.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 4.9 GHz f = 4.9 to 6.0 GHz f = 6.0 to 8.0 GHz f = 2.5 GHz f = 6.0 GHz f = 2.5 GHz f = 6.0 GHz f = 2.5 GHz No RF input 50% CTL to 90/10% RF MIN. − − − − − 21 − − 21 − − 17 13 14 − 25 TYP. 0.50 0.50 0.60 0.80 27 25 22 27 25 26 20 25 20 22 20 28 MAX. − 0.80 0.90 − − − − − − − − − − − − − Unit dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBm 25 − − − − − 28 30.5 30.5 50 0.1 20 − − − − 1.0 100 dBm dBm dBm dBm μA ns Notes 1. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the linear range. 2. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear range. CAUTION It is necessary to use DC blocking capacitors with this device. The value of DC blocking capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 3 of 12 μPG2411T6R ELECTRICAL CHARACTERISTICS 2 (TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) Parameter Insertion Loss 1 Insertion Loss 2 Insertion Loss 3 Insertion Loss 4 Isolation 1 (RFC-OFF Port) Isolation 2 (RFC-OFF Port) Isolation 3 (RFC-OFF Port) Isolation 4 (RF1-RF2) Isolation 5 (RF1-RF2) Isolation 6 (RF1-RF2) Return Loss 1 Return Loss 2 Return Loss 3 Return Loss 4 Return Loss 5 0.1 dB Loss Compression Symbol Lins1 Lins2 Lins3 Lins4 ISL1 ISL2 ISL3 ISL4 ISL5 ISL6 RL1 RL2 RL3 RL4 RL5 Pin (0.1 dB) Note1 Input Power 1 dB Loss Compression Note2 Input Power Input 3rd Order Intercept Point Switch Control Current Switch Control Speed Pin (1 dB) IIP3 Icont tSW Test Conditions f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 6.0 GHz f = 6.0 to 8.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 6.0 GHz f = 6.0 to 8.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 6.0 GHz f = 6.0 to 8.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 4.9 GHz f = 4.9 to 6.0 GHz f = 6.0 to 8.0 GHz f = 2.5 GHz f = 6.0 GHz f = 2.5 GHz f = 6.0 GHz f = 2.5 GHz No RF input 50% CTL to 90/10% RF MIN. − − − − − 21 − − 21 − − 17 13 14 − 20 TYP. 0.50 0.50 0.60 0.80 27 25 22 27 25 26 20 25 20 22 20 23 MAX. − 0.80 0.90 − − − − − − − − − − − − − Unit dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBm 19 − − − − − 23 28 27 50 0.1 20 − − − − 1.0 100 dBm dBm dBm dBm μA ns Notes 1. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the linear range. 2. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear range. CAUTION It is necessary to use DC blocking capacitors with this device. The value of DC blocking capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 4 of 12 μPG2411T6R EVALUATION CIRCUIT 1 000 pF C1 1 Vcont1 RF1 6 2 RFC 5 C1 3 Vcont2 RF2 4 C1 1 000 pF Remark C1: 8 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. APPLICATION INFORMATION C1 Switch C1 LESD C1 • C1 are DC blocking capacitors external to the device. The value may be tailored to provide specific electrical responses. • The RF ground connections should be kept as short as possible and connected to directly to a good RF ground for best performance. • LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 5 of 12 μPG2411T6R TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) RFC-RF1/RF2 INSERTION LOSS vs. FREQUENCY 0.0 Insertion Loss Lins (dB) −0.1 −0.2 −0.3 Vcont (H) = 3.0 V −0.4 −0.5 −0.6 −0.7 1.8 V −0.8 −0.9 −1.0 0 1 2 6 4 3 5 Frequency f (GHz) 7 8 RF1-RF2/RF2-RF1 ISOLATION vs. FREQUENCY 0 0 −5 −5 −10 −10 −15 Isolation ISL (dB) Isolation ISL (dB) RFC-RF1/RF2 ISOLATION vs. FREQUENCY 1.8 V −20 −25 −30 −35 Vcont (H) = 3.0 V −25 −30 −35 −40 −45 −45 1.0 2.0 3.0 4.0 5.0 6.0 Frequency f (GHz) 7.0 −50 0.0 8.0 RFC RETURN LOSS vs. FREQUENCY 0 0 −5 Return Loss RL (dB) Vcont (H) = 3.0 V −15 −20 −25 −30 1.8 V −35 −40 1.0 2.0 3.0 4.0 5.0 6.0 Frequency f (GHz) 7.0 8.0 −10 Vcont (H) = 3.0 V −15 −20 −25 −30 1.8 V −35 −40 −45 −50 0.0 Vcont (H) = 3.0 V RF1/RF2 RETURN LOSS vs. FREQUENCY −5 −10 1.8 V −20 −40 −50 0.0 Return Loss RL (dB) −15 −45 1.0 2.0 3.0 4.0 5.0 6.0 Frequency f (GHz) 7.0 8.0 −50 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency f (GHz) 7.0 8.0 Remark The graphs indicate nominal characteristics. R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 6 of 12 μPG2411T6R RFC-RF1/RF2 INSERTION LOSS, vs. SWITCH CONTROL VOLTAGE (H) 0.0 Insertion Loss Lins (dB) −0.1 −0.2 −0.3 −0.4 2.0 GHz −0.5 2.5 GHz 4.9 GHz −0.6 f = 6.0 GHz −0.7 −0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Switch Control Voltage (H) Vcont (H) (V) RF1-RF2/RF2-RF1 ISOLATION vs. SWITCH CONTROL VOLTAGE (H) 0 0 −5 −5 −10 −10 Isolation ISL (dB) Isolation ISL (dB) RFC-RF1/RF2 ISOLATION vs. SWITCH CONTROL VOLTAGE (H) −15 −20 2.5 GHz 2.0 GHz −25 f = 6.0 GHz −30 4.9 GHz 1.0 1.5 2.0 2.5 3.0 3.5 f = 6.0 GHz 4.9 GHz 1.0 1.5 2.0 2.5 3.0 3.5 Switch Control Voltage (H) Vcont (H) (V) Switch Control Voltage (H) Vcont (H) (V) RFC RETURN LOSS vs. SWITCH CONTROL VOLTAGE (H) RF1/RF2 RETURN LOSS vs. SWITCH CONTROL VOLTAGE (H) 0 −5 −5 −10 −10 −15 −20 f = 4.9 GHz 2.5 GHz 6.0 GHz −30 2.0 GHz −35 −40 2.0 GHz −30 0 −25 2.5 GHz −25 −40 4.0 Return Loss RL (dB) Return Loss RL (dB) −20 −35 −35 −40 −15 4.0 −15 f = 4.9 GHz −20 6.0 GHz −25 2.5 GHz 2.0 GHz −30 −35 1.0 1.5 2.0 2.5 3.0 3.5 Switch Control Voltage (H) Vcont (H) (V) 4.0 −40 1.0 1.5 2.0 2.5 3.0 3.5 Switch Control Voltage (H) Vcont (H) (V) 4.0 Remark The graphs indicate nominal characteristics. R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 7 of 12 μPG2411T6R RFC-RF1/RF2 INSERTION LOSS, Icont vs. INPUT POWER 0.0 RFC-RF1/RF2 INSERTION LOSS, Icont vs. INPUT POWER 3.0 0.0 f = 2.5 GHz 2.0 Vcont (H) = 3.0 V −1.5 1.5 −2.0 1.0 1.8 V Output Power Pout (dBm) 3rd Order Intermoduration Distortion IM3 (dBm) −3.0 18 0.5 3.0 V 20 22 24 26 30 28 Input Power Pin (dBm) 32 0.0 34 −1.0 2.5 1.8 V 2.0 Vcont (H) = 3.0 V −1.5 −2.0 1.0 1.8 V −2.5 −3.0 18 1.5 0.5 3.0 V 20 22 24 26 30 28 Input Power Pin (dBm) 32 Switch Control Current Icont (μA) −1.0 −0.5 Insertion Loss Lins (dB) 2.5 1.8 V Switch Control Current Icont (μA) Insertion Loss Lins (dB) −0.5 −2.5 3.0 f = 6.0 GHz 0.0 34 RFC-RF1/RF2 OUTPUT POWER, IM3 vs. INPUT POWER 60 50 40 30 f = 2.5 GHz 20 10 0 1.8 V −10 −20 −30 −40 Vcont (H) = 3.0 V −50 −60 −70 10 15 20 25 30 35 40 45 50 Input Power Pin (1 Tone) (dBm) 55 60 Remark The graphs indicate nominal characteristics. R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 8 of 12 μPG2411T6R MOUNTING PAD AND SOLDER MASK LAYOUT DIMENSIONS 6-PIN PLASTIC TSSON (T6R) (UNIT: mm) MOUNTING PAD 0.15 0.225 0.15 0.125 0.15 0.65 1.2 0.15 0.45 0.35 0.35 1.2 SOLDER MASK 0.13 0.15 0.225 0.75 1.15 0.13 0.6 0.13 0.45 0.35 0.35 0.75 1.15 Solder thickness : 0.08 mm Remark The mounting pad and solder mask layouts in this document are for reference only. When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 9 of 12 μPG2411T6R PACKAGE DIMENSIONS 6-PIN PLASTIC TSSON (T6R) (UNIT: mm) (Top View) 1.0±0.1 1.0±0.1 (Bottom View) 0.15+0.07 –0.05 A 0.08 MIN. A 0.15+0.07 –0.05 A A 0.45 ±0.1 0.35±0.06 0.35±0.06 1.0±0.1 0.08 MIN. 1.0±0.1 0.13±0.07 0.175±0.075 0.37+0.03 –0.05 0.23±0.07 Remark A>0 R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 10 of 12 μPG2411T6R RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 Page 11 of 12 μPG2411T6R Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 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