A Business Partner of Renesas Electronics Corporation. Preliminary μPG2214TB GaAs Integrated Circuit for L, S-Band SPDT Switch Data Sheet R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 DESCRIPTION The μPG2214TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from 0.05 to 3.0 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting. FEATURES • Switch control voltage • • • • : Vcont (H) = 1.8 to 5.3 V (3.0 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) Low insertion loss : Lins1 = 0.25 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins2 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins3 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins4 = 0.35 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins5 = 0.35 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V High isolation : ISL1 = 32 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL2 = 28 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL3 = 27 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL4 = 26 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : ISL5 = 24 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V Handling power : Pin (1 dB) = +27.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Pin (1 dB) = +20.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 1.8 V, Vcont (L) = 0 V High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATIONS • L, S-band digital cellular or cordless telephone TM • W-LAN, WLL and Bluetooth etc. <R> ORDERING INFORMATION Part Number μPG2214TB-E4 Package Marking 6-pin super minimold (2012) (Pb-Free) G4J Supplying Form • Embossed tape 8 mm wide • Pin 4, 5, 6 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: μPG2214TB-A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 1 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) G4J 1 (Top View) 2 3 (Bottom View) 6 1 6 6 1 5 2 5 5 2 4 3 4 4 3 Pin No. Pin Name 1 OUTPUT1 2 GND 3 OUTPUT2 4 Vcont2 5 INPUT 6 Vcont1 TRUTH TABLE Vcont1 Vcont2 INPUT−OUTPUT1 INPUT−OUTPUT2 Low High ON OFF High Low OFF ON ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Switch Control Voltage Symbol Ratings Vcont +6.0 Unit Note V Input Power Pin +30 dBm Operating Ambient Temperature TA −45 to +85 °C Storage Temperature Tstg −55 to +150 °C Note Vcont1 − Vcont2 ≤ 6.0 V RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Switch Control Voltage (H) Vcont (H) 1.8 3.0 5.3 V Switch Control Voltage (L) Vcont (L) −0.2 0 0.2 V R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 2 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) Parameter Symbol Test Conditions Note 1 MIN. TYP. MAX. Unit − 0.25 0.45 dB Insertion Loss 1 Lins1 f = 0.05 to 0.5 GHz Insertion Loss 2 Lins2 f = 0.5 to 1.0 GHz − 0.25 0.45 dB Insertion Loss 3 Lins3 f = 1.0 to 2.0 GHz − 0.30 0.50 dB Insertion Loss 4 Lins4 f = 2.0 to 2.5 GHz − 0.35 0.55 dB Insertion Loss 5 Lins5 f = 2.5 to 3.0 GHz − 0.35 0.60 dB 29 32 − dB Note 1 Isolation 1 ISL1 f = 0.05 to 0.5 GHz Isolation 2 ISL2 f = 0.5 to 1.0 GHz 25 28 − dB Isolation 3 ISL3 f = 1.0 to 2.0 GHz 24 27 − dB Isolation 4 ISL4 f = 2.0 to 2.5 GHz 23 26 − dB Isolation 5 ISL5 f = 2.5 to 3.0 GHz 21 24 − dB 15 20 − dB 15 20 − dB 15 20 − dB 15 20 − dB +21.0 + 23.0 − dBm f = 0.5 to 3.0 GHz − +23.0 − dBm f = 0.5 to 3.0 GHz − +27.0 − dBm f = 2.0 GHz, Pin = +15 dBm − −55 −47 dBc f = 2.5 GHz, Pin = +15 dBm − −55 −47 dBc f = 2.0 GHz, Pin = +15 dBm − −55 −47 dBc f = 2.5 GHz, Pin = +15 dBm − −55 −47 dBc f = 0.5 to 3.0 GHz, 2 tone, − +58 − dBm − 4 20 μA − 20 200 ns Input Return Loss 1 RLin1 f = 0.05 to 0.5 GHz Input Return Loss 2 RLin2 f = 0.5 to 3.0 GHz Output Return Loss 1 RLout1 f = 0.05 to 0.5 GHz Output Return Loss 2 RLout2 f = 0.5 to 3.0 GHz 0.1 dB Loss Compression Input Power 1 dB Loss Compression Input Power Pin (0.1 dB) Note 2 Note 3 2nd Harmonics 3rd Harmonics Pin (1 dB) 2f0 3f0 Intermodulation Intercept Point IIP3 Switch Control Current Icont Switch Control Speed tSW Note 1 Note 1 f = 2.0/2.5 GHz Pin = +16 dBm, 5 MHz spicing 50% CTL to 90/10% RF Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz 2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. 3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 3 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) Parameter Symbol Test Conditions Note 1 MIN. TYP. MAX. Unit − 0.25 0.50 dB Insertion Loss 6 Lins6 f = 0.05 to 0.5 GHz Insertion Loss 7 Lins7 f = 0.5 to 1.0 GHz − 0.25 0.50 dB Insertion Loss 8 Lins8 f = 1.0 to 2.0 GHz − 0.30 0.55 dB Insertion Loss 9 Lins9 f = 2.0 to 2.5 GHz − 0.35 0.60 dB Insertion Loss 10 Lins10 f = 2.5 to 3.0 GHz − 0.35 0.65 dB 27 30 − dB Note 1 Isolation 6 ISL6 f = 0.05 to 0.5 GHz Isolation 7 ISL7 f = 0.5 to 2.0 GHz 23 27 − dB Isolation 8 ISL8 f = 2.0 to 2.5 GHz 21 25 − dB Isolation 9 ISL9 f = 2.5 to 3.0 GHz Input Return Loss 3 Output Return Loss 3 0.1 dB Loss Compression Input Power RLin3 RLout3 Pin (0.1 dB) Note 2 1 dB Loss Compression Pin (1 dB) Switch Control Current Icont Switch Control Speed tSW Input Power Note 3 20 24 − dB f = 0.05 to 3.0 GHz Note 1 15 20 − dB f = 0.05 to 3.0 GHz Note 1 15 20 − dB +14.0 + 17.0 − dBm f = 0.5 to 3.0 GHz − +17.0 − dBm f = 0.5 to 3.0 GHz − +20.0 − dBm − 4 20 μA − 20 200 ns f = 2.0/2.5 GHz 50% CTL to 90/10% RF Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz 2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. 3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than 100 pF. R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 4 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB EVALUATION CIRCUIT OUTPUT1 OUTPUT2 C0 Note C0 3 4 2 5 1 6 C0 1 000 pF Vcont2 INPUT 1 000 pF Vcont1 Note C0 : 0.05 to 0.5 GHz 1 000 pF : 0.5 to 3.0 GHz 100 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 5 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vcont2 6pin SMM SPDT SW Vc2 OUTPUT2 C2 C 2 4 OUT 2 C C1 INPUT C1 IN G4J <R> C3 C1 C C 5 C2 1 OUT 1 OUTPUT1 Vc1 Vcont1 USING THE NEC EVALUATION BOARD Symbol C1, C2, C3 C4, C5 Values 100 pF 1 000 pF R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 6 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified) 1: –0.533 dB 1.0 GHz 2: –0.674 dB 1.5 GHz 3: –0.830 dB 2.0 GHz 4: –0.939 dB 2.5 GHz 5: –1.142 dB 3.0 GHz Insertion Loss Lins (dB) 4 3 2 1 0 1 –1 2 –2 3 4 5 –3 –4 –5 0.5 5 INPUT-OUTPUT2 INSERTION LOSS vs. FREQUENCY 1: –0.533 dB 1.0 GHz 2: –0.688 dB 1.5 GHz 3: –0.860 dB 2.0 GHz 4: –0.949 dB 2.5 GHz 5: –1.152 dB 3.0 GHz 4 Insertion Loss Lins (dB) 5 INPUT-OUTPUT1 INSERTION LOSS vs. FREQUENCY 3 2 1 0 1 –1 –2 2 3 4 5 1.5 2.0 2.5 3.0 –3 –4 1.0 1.5 2.0 2.5 3.0 3.5 Frequency f (GHz) –5 0.5 1.0 3.5 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Caution These characteristics values include the losses of the NEC evaluation board. R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 7 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB 50 INPUT-OUTPUT1 ISOLATION vs. FREQUENCY 1: –28.87 dB 1.0 GHz 2: –27.81 dB 1.5 GHz 3: –27.54 dB 2.0 GHz 4: –26.74 dB 2.5 GHz 5: –25.04 dB 3.0 GHz 40 Isolation ISL (dB) 30 20 10 0 –10 –20 –30 1 2 3 4 5 50 10 0 –10 –20 1 2 3 4 5 1.0 1.5 2.0 2.5 3.0 –40 1.0 1.5 2.0 2.5 3.0 –50 0.5 3.5 3.5 Frequency f (GHz) Frequency f (GHz) INPUT-OUTPUT1 INPUT RETURN LOSS vs. FREQUENCY INPUT-OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY 30 20 10 0 –10 –20 1 2 –30 3 4 –40 –50 0.5 1.0 1.5 2.0 2.5 5 3.0 50 1: –29.277 dB 1.0 GHz 2: –22.261 dB 1.5 GHz 3: –19.021 dB 2.0 GHz 4: –19.468 dB 2.5 GHz 5: –24.914 dB 3.0 GHz 40 Input Return Loss RLin (dB) 1: –28.279 dB 1.0 GHz 2: –22.334 dB 1.5 GHz 3: –19.341 dB 2.0 GHz 4: –19.843 dB 2.5 GHz 5: –24.355 dB 3.0 GHz 40 30 20 10 0 –10 –20 –30 1 2 3 4 2.0 2.5 –40 –50 0.5 3.5 1.0 1.5 5 3.0 3.5 Frequency f (GHz) Frequency f (GHz) INPUT-OUTPUT1 OUTPUT RETURN LOSS vs. FREQUENCY INPUT-OUTPUT2 OUTPUT RETURN LOSS vs. FREQUENCY 50 1: –30.808 dB 1.0 GHz 2: –22.826 dB 1.5 GHz 3: –19.596 dB 2.0 GHz 4: –19.41 dB 2.5 GHz 5: –22.554 dB 3.0 GHz 40 30 20 10 0 –10 –20 –30 1 2 3 4 5 –40 –50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency f (GHz) 50 Output Return Loss RLout (dB) Input Return Loss RLin (dB) 20 –30 50 Output Return Loss RLout (dB) 1: –29.12 dB 1.0 GHz 2: –27.81 dB 1.5 GHz 3: –27.54 dB 2.0 GHz 4: –26.56 dB 2.5 GHz 5: –24.88 dB 3.0 GHz 30 –40 –50 0.5 INPUT-OUTPUT2 ISOLATION vs. FREQUENCY 40 Isolation ISL (dB) <R> 1: –29.853 dB 1.0 GHz 2: –22.191 dB 1.5 GHz 3: –18.863 dB 2.0 GHz 4: –18.563 dB 2.5 GHz 5: –23.874 dB 3.0 GHz 40 30 20 10 0 –10 –20 –30 1 2 3 4 2.0 2.5 –40 –50 0.5 1.0 1.5 5 3.0 3.5 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 8 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) 30 f = 2 GHz 25 20 15 10 5 10 12 14 16 18 20 22 24 26 28 30 Input Power Pin (dBm) Remark The graph indicate nominal characteristics. R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 9 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. Page 10 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) : 260°C or below Time at temperature of 220°C or higher : 60 seconds or less Maximum number of reflow processes : 3 times Peak temperature (package surface temperature) : 215°C or below Time at peak temperature Preheating time at 120 to 180° C Maximum chlorine content of rosin flux (% mass) VPS Time at temperature of 200°C or higher Preheating time at 120 to 150° C : 10 seconds or less : 0.2%(Wt.) or below : 25 to 40 seconds VP215 : 30 to 60 seconds : 3 times Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature IR260 : 120±30 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Condition Symbol : 0.2%(Wt.) or below : 10 seconds or less WS260 Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes : 1 time Peak temperature (pin temperature) : 350°C or below Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Maximum chlorine content of rosin flux (% mass) Partial Heating Soldering time (per side of device) : 0.2%(Wt.) or below : 3 seconds or less HS350 Caution Do not use different soldering methods together (except for partial heating). R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 11 of 12 A Business Partner of Renesas Electronics Corporation. μPG2214TB Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 Page 12 of 12 μPG2214TB Data Sheet Revision History Rev. Date Description Summary Page 1.00 Mar 10, 2004 – 2.00 Apr 12, 2004 pp.3,4 3.00 Oct 20, 2004 p.1 Modification of ORDERING INFORMATION pp.7 to 9 Addition of TYPICAL CHARACTERISTICS p.1 Modification of ORDERING INFORMATION p.6 Modification of ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD p.8 Modification of TYPICAL CHARACTERISTICS 4.00 Sep 10, 2012 First edition issued Modification of ELECTRICAL CHARACTERISTICS All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. 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