MMBT3906DW PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 6 5 4 TR2 TR1 1 2 1. Emitter 2. Base 3. Collector 4. Emitter 5. Base 6. Collector SOT-363 Plastic Package H C 3 Absolute Maximum Ratings (Ta = 25℃) E T M E S Parameter Symbol Value Unit 40 V 40 V 5 V 200 mA 200 mW Tj 150 ℃ Tstg - 55 to +150 ℃ Collector Base Voltage -VCBO Collector Emitter Voltage -VCEO Emitter Base Voltage -VEBO Collector Current -IC Total Power Dissipation Ptot Junction Temperature Storage Temperature Range SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：23/03/2013 Rev：01 MMBT3906DW Characteristics at Ta = 25℃ Parameter Symbol Min. Max. Unit hFE hFE hFE hFE hFE 60 80 100 60 30 300 - - Collector Emitter Cutoff Current at -VCE = 30 V -ICES - 50 nA Emitter Base Cutoff Current at -VEB = 3 V -IEBO DC Current Gain at -VCE = 1 V, -IC = 0.1 mA at -VCE = 1 V, -IC = 1 mA at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 1 V, -IC = 100 mA H C - 50 nA Collector Base Breakdown Voltage at -IC = 10 µA -V(BR)CBO 40 - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 40 - V Emitter Base Breakdown Voltage at -IE = 10 µA -V(BR)EBO 5 - V Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -VCE(sat) - 0.25 0.4 V Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA -VBE(sat) 0.65 - 0.85 0.95 V fT 250 - MHz Cob - 4.5 pF Delay Time at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA td - 35 ns Rise Time at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA tr - 35 ns Storage Time at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA tstg - 225 ns Fall Time at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA tf - 75 ns E T M E S Transition Frequency at -VCE = 20 V, IE = 10 mA, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 100 KHz SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：23/03/2013 Rev：01 MMBT3906DW H C E T M E S SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：23/03/2013 Rev：01 Power Dissipation: Ptot (mW) MMBT3906DW 300 250 200 150 H C 100 50 0 0 25 50 75 100 125 150 O Ambient Temperature: Ta ( C) E T M E S Fig.5 Power Dissipation vs Ambient Temperature SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：23/03/2013 Rev：01