BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Symbol BCV27 BCV47 BCV27 BCV47 VCEO VEBO Collector Current IC Peak Collector Current ICM E T IB Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA M E at VCE = 5 V, IC = 10 mA S at VCE = 5 V, IC = 100 mA Collector Base Cutoff Current at VCB = 30 V at VCB = 60 V Emitter Base Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On-state Voltage at IC = 10 mA, VCE = 5 V Transition Frequency at VCE = 5 V, IC = 30 mA, f = 100 MHz Unit 40 80 30 60 VCBO Emitter Base Voltage Base Current Value Ptot Tj Tstg Symbol Min. BCV27 BCV47 BCV27 BCV47 BCV27 BCV47 hFE hFE hFE hFE hFE hFE BCV27 BCV47 V H C V 10 V 500 mA 800 mA 100 mA 200 mW 150 O C - 65 to + 150 O C Typ. Max. Unit 4000 2000 10000 4000 20000 10000 - - - ICBO - - 100 100 nA IEBO - - 100 nA BCV27 V BCV47 (BR)CBO BCV27 V BCV47 (BR)CEO 40 80 30 60 - - V - - V V(BR)EBO 10 - - V VCE(sat) - - 1 V VBE(sat) - - 1.5 V VBE(on) - - 1.4 V fT - 220 - MHz SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 18/08/2007 BCV27 / BCV47 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O M E S E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 18/08/2007