mmbta64 - Semtech

MMBTA63 / MMBTA64
PNP Silicon Epitaxial Planar Transistor
for general purpose application, darlington
transistor
TO-236 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
30
V
Collector Emitter Voltage
-VCEO
30
V
Emitter Base Voltage
-VEBO
10
V
Collector Current
-IC
500
mA
Power Dissipation
Ptot
200
mW
Tj
150
O
TStg
- 55 to + 150
O
Junction Temperature
Storage Temperature Range
C
C
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 100 mA
at -VCE = 5 V, -IC = 100 mA
Collector Cutoff Current
at -VCB = 30 V
Emitter Cutoff Current
at -VEB = 10 V
Collector Emitter Breakdown Voltage
at -IC = 100 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 0.1 mA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 100 mA
Transition Frequency
at -VCE = 5 V, IE = 10 mA
Symbol
Min.
Max.
Unit
hFE
hFE
hFE
hFE
5000
10000
10000
20000
-
-
-ICBO
-
100
nA
-IEBO
-
100
nA
-V(BR)CEO
30
-
V
-VCE(sat)
-
1.5
V
-VBE(on)
-
2
V
fT
125
-
MHz
MMBTA63
MMBTA64
MMBTA63
MMBTA64
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev:01
MMBTA63 / MMBTA64
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015 Rev:01