BC517 NPN Silicon Darlington Transistor Collector Base Emitter 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage VEBO 10 V IC 500 mA Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 20 mA Collector Base Cutoff Current at VCB = 30 V Collector Emitter Cutoff Current at VCE = 30 V Emitter Base Cutoff Current at VEB = 10 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA Base Emitter On Voltage at VCE = 5 V, IC = 10 mA Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz C C Symbol Min. Typ. Max. Unit hFE 30,000 - - - ICBO - - 100 nA ICES - - 500 nA IEBO - - 100 nA V(BR)CBO 40 - - V V(BR)CES 30 - - V V(BR)EBO 10 - - V VCE(sat) - - 1 V VBE(on) - - 1.4 V fT - 200 - MHz SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated :15/06/2006