ESD0521P - Semitech

SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
ESD0521P
DESCRIPTION
0521P is a low-capacitance Transient Voltage Suppressor (TVS) designed to provide electrostatic discharge (ESD)
protection for high-speed data interfaces. With typical capacitance of 0.35pF only, 0521P is designed to protect
parasitic-sensitive systems against over-voltage and over-current transient events. It complies with IEC 61000-4-2
(ESD), Level 4 (±15kV air, ±8kV contact discharge), IEC 61000-4-4 (electrical fast transient - EFT) (40A, 5/50 ns), very
fast charged device model (CDM) ESD and cable discharge event (CDE), etc.
0521P uses ultra-small uDFN-2L package. Each 0521P device can protect one high-speed data line. It offers system
designers flexibility to protect single data line where space is a premium concern. The combined features of low
capacitance, ultra-small size and high ESD robustness make 0521P ideal for high-speed data port and high-frequency
line (e.g., USB 2.0 & antenna line) applications, such as cellular phones and HD visual devices.
APPLICATIONS
MACHANICAL DATA
·Transient protection for high-speed data lines
IEC 61000-4-2 (ESD) ±15kV (Air)
±8kV (Contact)
IEC 61000-4-4 (EFT) 40A (5/50 ns)
Cable Discharge Event (CDE)
·Package optimized for high-speed lines
·DFN1006 package
·Flammability Rating: UL 94V-0
·Packaging: Tape and Reel
·High temperature soldering guaranted:260℃/10s
Reel size: 7 inch
·Ultra-small package (1.0mm× 0.6mm× 0.4mm)
·Protects one data, control or power line
·Low capacitance: 0.35pF (Typical)
·Low leakage current: 10nA @ VRWM (Typical)
·Low clamping voltage
PIN CONFIGURATION
ORDERING INFORMATION
— Device: 0521P
— Package: DFN1006
— Material: Halogen free
— Packing: Tape & Reel
— Quantity per reel: 10,000pcs
PACKAGE OUTLINE
APPLICATIONS
— Serial ATA
— Desktops, Servers and Notebooks
— Cellular Phones
— MDDI Ports
— USB2.0 Power and Data Line Protection
— Display Ports
Digital Visual Interfaces (DVI)
1
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ESD0521P
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Units
VESD
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
±17
±12
kV
TOPT
Operating Temperature
-55/+125
°C
TSTG
Storage Temperature
-55/+150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25° C)
Symbol
Parameter
Test Condition
VRWM
Reverse Working Voltage
VBR
Reverse Breakdown
Voltage
IT = 1mA
IR
Reverse Leakage Current
VRWM = 5V
VC1
Clamping Voltage 1
VC2
CJ
Min
Typ
Max
Units
5.0
V
8.8
11
V
0.01
1.0
μA
IPP = 1A, tp =
8/20μs
12
V
Clamping Voltage 2
IPP = 2A, tp =
8/20μs
14
V
Junction Capacitance
VR = 0V, f = 1MHz
0.6
pF
6.0
0.5
2
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ESD0521P
ELECTRICAL CHARACTERISTICS CURVE
3
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ESD0521P
4
------------------------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD