HTS16A60H/HTS16A80H 3 Quadrants Standard TRIAC Symbol FEATURES Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (IT(RMS) = 16A) Gate Trigger Current : 35mA High commutation capability. TO-220F Applications T1 T2 General purpose of AC switching, heating control, motor control, etc G General Description Semihow’s standard TRIAC product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage. It is generally suitable for power and phase control in ac application Absolute Maximum Ratings Symbol (TJ=25℃ unless otherwise specified ) Parameter Ratings Conditions Unit HTS16A60H HTS16A80H VDRM Repetitive Peak Off-State Voltage VRRM Repetitive Peak Reverse Voltage IT(AV) Average On-State Current IT(RMS) R.M.S. On-State Current ITSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive Fusing Current t = 10ms Forward Peak Gate Power Dissipation Sine wave, 50/60Hz, Gate open 600 800 V 600 800 V 14.4 A 16 A 160/168 A 128 A2S TJ = 125 °C 5 W Forward Average Gate Power Dissipation TJ = 125 °C, over any 20ms 1 W IFGM Forward Peak Gate Current TJ = 125 °C, pulse width ≤ 20us 2 A VRGM Reverse Peak Gate Voltage TJ = 125 °C, pulse width ≤ 20us 10 V Operating Junction Temperature -40~+150 oC Storage Temperature -40~+150 oC I2t PGM PG(AV) TJ TSTG Full sine wave, TC = 81oC ◎ SEMIHOW REV.A1,March 2013 HTS16A60H_HTS16A80H VDRM = 600V/800V IT(RMS) = 16 A ITSM = 168 A IGT = 35mA (TJ=25℃ unless otherwise specified ) Symbol Parameter IDRM Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current IGT Gate Trigger Current VGT Conditions VD = VDRM Min Typ Max Unit TJ=25oC - - 50 uA TJ=125oC - - 5 mA TJ=25oC - - 50 uA TJ =125oC - - 5 mA VD = 12V, RL=330Ω 1+, 1-, 3- - - 35 mA Gate Trigger Voltage VD = 12V, RL=330Ω 1+, 1-, 3- - - 1.5 V VGD Non-Trigger Gate Voltage1 VD = 12V, RL=330Ω, TJ=125oC 0.2 - - V VTM Peak On-State Voltage IT = 23A, IG = 50mA - 1.1 1.4 V dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=125oC 200 - - V/us Holding current IT= 0.2A - 50 - mA Min Typ Max Unit IH VD = VDRM Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Thermal Characteristics Symbol Parameter Conditions RθJC Thermal Resistance Junction to Case 2.1 oC/W RθJA Thermal Resistance Junction to Ambient 58 oC/W ◎ SEMIHOW REV.A1,March 2013 HTS16A60H_HTS16A80H Electrical Characteristics HTS16A60H_HTS16A80H Typical Characteristics 180o 20 150o 18 120o 16 Power dissipation, PD [W] Maximum allowable case temperature, TC [oC] 22 14 12 90o 10 8 6 60o 4 2 30o 0 0 1 2 3 4 5 6 7 8 130 30o 120 60o 110 90o 100 120o 90 150o 80 180o 70 0 9 10 11 12 13 14 15 16 17 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 R.M.S. on state current, IT(RMS) [A] R.M.S. on state current, IT(RMS) [A] Fig 1. R.M.S. current vs. Power dissipation Fig 2. R.M.S. current vs. Case temperature 200 180 1 Surge on state current, ITSM [A] 10 Gate voltage, VG [V] PGM(5W) PG(AV)(1W) 100 o 25[ C] I+GT1 I-GT1 I-GT3 101 102 140 120 60Hz 100 50Hz 80 60 40 20 VGD 10-1 100 160 103 0 100 104 101 Gate current, IG [mA] Fig 4. Surge on state current rating (Non-repetitive) Fig 3. Gate power characteristics 2 IGT(toC) X 100 (%) IGT(25oC) 2 IGT(toC) X 100 (%) IGT(25oC) 102 Time [cycles] I+GT1 I-GT1 I-GT3 1 0 -50 -25 0 25 50 75 100 125 150 o Junction temperature, TJ [ C] Fig 5. Gate trigger current vs. junction temperature V+GT1 V-GT1 V-GT3 1 0 -50 -25 0 25 50 75 100 125 150 Junction temperature, TJ [oC] Fig 6. Gate trigger voltage vs. junction temperature ◎ SEMIHOW REV.A1,March 2013 HTS16A60H_HTS16A80H Typical Characteristics 101 Thermal impedance [oC/W] 1 IH(25oC) IH(toC) X 100(%) 2 0 -50 -25 0 25 50 75 100 125 150 100 10-1 10-2 10-1 o 100 101 Pulse Time [sec] Junction Temperature, TJ [ C] Fig 7. Holding current vs. Junction temperature Fig 8. Thermal Impedance vs. pulse time Instantaneou on state current, IT [A] 103 102 101 150oC 25oC 0 10 10-1 RS=0.02Ω VTO=1.15V 0 1 2 3 4 Instantaneou on state voltage, VT [V] Fig 9. Instantaneous on state current vs. Instantaneous on state voltage Measurement of gate trigger current RL RL RG VG (1) Quadrant I VDD RG VG (2) Quadrant II RL VDD RG VG (3) Quadrant III RL VDD VDD RG VG (4) Quadrant IV Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. ◎ SEMIHOW REV.A1,March 2013 TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A1,March 2013 HTS16A60H_HTS16A80H Package Dimension