HTS12A60H/HTS12A80H 3 Quadrants Standard TRIAC Symbol FEATURES Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (IT(RMS) = 12A) Gate Trigger Current : 35mA High commutation capability. TO-220F Applications T1 T2 General purpose of AC switching, heating control, motor control, etc G General Description Semihow’s standard TRIAC product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage. It is generally suitable for power and phase control in ac application Absolute Maximum Ratings Symbol (TJ=25℃ unless otherwise specified ) Parameter Ratings Conditions Unit HTS12A60H HTS12A80H VDRM Repetitive Peak Off-State Voltage VRRM Repetitive Peak Reverse Voltage IT(AV) Average On-State Current IT(RMS) R.M.S. On-State Current ITSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive Fusing Current Sine wave, 50/60Hz, Gate open 600 800 V 600 800 V 10.8 A 12 A 120/126 A t = 10ms 72 A2S Forward Peak Gate Power Dissipation TJ = 125 °C 5 W Forward Average Gate Power Dissipation TJ = 125 °C, over any 20ms 0.5 W IFGM Forward Peak Gate Current TJ = 125 °C, pulse width ≤ 20us 2 A VRGM Reverse Peak Gate Voltage TJ = 125 °C, pulse width ≤ 20us 5 V Operating Junction Temperature -40~+150 oC Storage Temperature -40~+150 oC I2t PGM PG(AV) TJ TSTG Full sine wave, TC = 85.7oC ◎ SEMIHOW REV.A1,March 2013 HTS12A60H_HTS12A80H VDRM = 600V/800V IT(RMS) = 12 A ITSM = 126 A IGT = 35mA (TJ=25℃ unless otherwise specified ) Symbol Parameter IDRM Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current IGT Gate Trigger Current VGT Conditions VD = VDRM Min Typ Max Unit TJ=25oC - - 50 uA TJ=125oC - - 5 mA TJ=25oC - - 50 uA TJ =125oC - - 5 mA VD = 12V, RL=330Ω 1+, 1-, 3- - - 35 mA Gate Trigger Voltage VD = 12V, RL=330Ω 1+, 1-, 3- - - 1.5 V VGD Non-Trigger Gate Voltage1 VD = 12V, RL=330Ω, TJ=125oC 0.2 - - V VTM Peak On-State Voltage IT = 17A, IG = 20mA - 1.2 1.4 V dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=125oC 40 - - V/us Holding current IT= 0.2A - 45 - mA Min Typ Max Unit IH VD = VDRM Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Thermal Characteristics Symbol Parameter Conditions RθJC Thermal Resistance Junction to Case 2.5 oC/W RθJA Thermal Resistance Junction to Ambient 58 oC/W ◎ SEMIHOW REV.A1,March 2013 HTS12A60H_HTS12A80H Electrical Characteristics HTS12A60H_HTS12A80H Typical Characteristics Maximum allowable case temperature, TC [oC] 16 180o 150o 14 Power dissipation, PD [W] 12 120o 10 8 90o 6 4 60o 2 30o 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 130 30o 120 60o 110 90o 100 120o 150o 90 180o 80 0 14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 R.M.S. on state current, IT(RMS) [A] R.M.S. on state current, IT(RMS) [A] Fig 1. R.M.S. current vs. Power dissipation Fig 2. R.M.S. current vs. Case temperature 160 140 1 Surge on state current, ITSM [A] 10 Gate voltage, VG [V] PGM(5W) PG(AV)(0.5W) 0 10 25[oC] I+GT1 I-GT1 I-GT3 120 100 101 102 50Hz 60 40 20 VGD 10-1 100 60Hz 80 103 0 100 104 101 Fig 4. Surge on state current rating (Non-repetitive) Fig 3. Gate power characteristics 2 IGT(toC) X 100 (%) IGT(25oC) 2 IGT(toC) X 100 (%) IGT(25oC) 102 Time [cycles] Gate current, IG [mA] I+GT1 I-GT1 I-GT3 1 0 -50 -25 0 25 50 75 100 125 150 o Junction temperature, TJ [ C] Fig 5. Gate trigger current vs. junction temperature V+GT1 V-GT1 V-GT3 1 0 -50 -25 0 25 50 75 100 125 150 Junction temperature, TJ [oC] Fig 6. Gate trigger voltage vs. junction temperature ◎ SEMIHOW REV.A1,March 2013 HTS12A60H_HTS12A80H Typical Characteristics 101 Thermal impedance [oC/W] 1 IH(25oC) IH(toC) X 100(%) 2 0 -50 -25 0 25 50 75 100 125 150 100 10-1 10-2 10-1 Junction Temperature, TJ [oC] 101 100 Pulse Time [sec] Fig 7. Holding current vs. Junction temperature Fig 8. Thermal Impedance vs. pulse time Instantaneou on state current, IT [A] 102 150oC 101 25oC 100 RS=0.035Ω VTO=0.85V 10-1 0 1 2 3 4 Instantaneou on state voltage, VT [V] Fig 9. Instantaneous on state current vs. Instantaneous on state voltage Measurement of gate trigger current RL RL RG VG (1) Quadrant I VDD RG VG (2) Quadrant II RL VDD RG VG (3) Quadrant III RL VDD VDD RG VG (4) Quadrant IV Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. ◎ SEMIHOW REV.A1,March 2013 TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A1,March 2013 HTS12A60H_HTS12A80H Package Dimension