HTS8A60H/HTS8A80H 3 Quadrants Standard TRIAC Symbol FEATURES Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (IT(RMS) = 8A) Gate Trigger Current : 35mA High commutation capability. TO-220F Applications T1 T2 General purpose of AC switching, heating control, motor control, etc G General Description Semihow’s standard TRIAC product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage. It is generally suitable for power and phase control in ac application Absolute Maximum Ratings Symbol (TJ=25℃ unless otherwise specified ) Parameter Ratings Conditions VDRM Repetitive Peak Off-State Voltage VRRM Repetitive Peak Reverse Voltage IT(AV) Average On-State Current IT(RMS) R.M.S. On-State Current ITSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive Fusing Current Sine wave, 50/60Hz, Gate open Unit HTS8A60H HTS8A80H 600 800 V 600 800 V 7.2 A 8 A 80/84 A t = 10ms 32 A2S Forward Peak Gate Power Dissipation TJ = 125 °C 5 W Forward Average Gate Power Dissipation TJ = 125 °C, over any 20ms 0.5 W IFGM Forward Peak Gate Current TJ = 125 °C, pulse width ≤ 20us 2 A VRGM Reverse Peak Gate Voltage TJ = 125 °C, pulse width ≤ 20us 10 V Operating Junction Temperature -40~+150 oC Storage Temperature -40~+150 oC I2t PGM PG(AV) TJ TSTG Full sine wave, TC = 97.6oC ◎ SEMIHOW REV.A1,March 2013 HTS8A60H_HTS8A80H VDRM = 600V/800V IT(RMS) = 8 A ITSM = 84 A IGT = 35mA (TJ=25℃ unless otherwise specified ) Symbol Parameter IDRM Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current IGT Gate Trigger Current VGT Conditions VD = VDRM Min Typ Max Unit TJ=25oC - - 50 uA TJ=125oC - - 5 mA TJ=25oC - - 50 uA TJ =125oC - - 5 mA VD = 12V, RL=330Ω 1+, 1-, 3- - - 35 mA Gate Trigger Voltage VD = 12V, RL=330Ω 1+, 1-, 3- - - 1.5 V VGD Non-Trigger Gate Voltage1 VD = 12V, RL=330Ω, TJ=125oC 0.2 - - V VTM Peak On-State Voltage IT = 11A, IG = 20mA - 1.2 1.5 V dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=125oC 200 - - V/us Holding current IT= 0.2A - 30 - mA Min Typ Max Unit IH VD = VDRM Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Thermal Characteristics Symbol Parameter Conditions RθJC Thermal Resistance Junction to Case 3.7 oC/W RθJA Thermal Resistance Junction to Ambient 58 oC/W ◎ SEMIHOW REV.A1,March 2013 HTS8A60H_HTS8A80H Electrical Characteristics HTS8A60H_HTS8A80H Typical Characteristics 8 Maximum allowable case temperature, TC [oC] 10 o Power dissipation, PD [W] 180 150o 6 120o 4 90o 2 60o 30o 0 0 1 2 3 4 5 6 7 8 9 10 130 30o 120 60o 90o 110 120o 150o 180o 100 90 0 1 R.M.S. on state current, IT(RMS) [A] 2 3 4 5 6 7 8 9 10 R.M.S. on state current, IT(RMS) [A] Fig 1. R.M.S. current vs. Power dissipation Fig 2. R.M.S. current vs. Case temperature 100 90 1 Surge on state current, ITSM [A] 10 Gate voltage, VG [V] PGM(5W) PG(AV)(0.5W) 100 25[oC] I+GT1 I-GT1 I-GT3 101 102 70 60 60Hz 50 50Hz 40 30 20 10 VGD 10-1 100 80 103 0 100 104 101 Fig 4. Surge on state current rating (Non-repetitive) Fig 3. Gate power characteristics 2 IGT(toC) X 100 (%) IGT(25oC) 2 IGT(toC) X 100 (%) IGT(25oC) 102 Time [cycles] Gate current, IG [mA] I+GT1 I-GT1 I-GT3 1 0 -50 -25 0 25 50 75 100 125 150 o Junction temperature, TJ [ C] Fig 5. Gate trigger current vs. junction temperature V+GT1 V-GT1 V-GT3 1 0 -50 -25 0 25 50 75 100 125 150 Junction temperature, TJ [oC] Fig 6. Gate trigger voltage vs. junction temperature ◎ SEMIHOW REV.A1,March 2013 HTS8A60H_HTS8A80H Typical Characteristics Thermal impedance [oC/W] 101 1 IH(25oC) IH(toC) X 100(%) 2 100 0 -50 -25 0 25 50 75 100 125 150 10-2 10-1 Junction Temperature, TJ [oC] 100 101 Pulse Time [sec] Fig 7. Holding current vs. Junction temperature Fig 8. Thermal Impedance vs. pulse time Instantaneou on state current, IT [A] 102 25oC 150oC 1 10 100 RS=0.019Ω VTO=0.86V 10-1 0 1 2 3 4 Instantaneou on state voltage, VT [V] Fig 9. Instantaneous on state current vs. Instantaneous on state voltage Measurement of gate trigger current RL RL RG VG (1) Quadrant I VDD RG VG (2) Quadrant II RL VDD RG VG (3) Quadrant III RL VDD VDD RG VG (4) Quadrant IV Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. ◎ SEMIHOW REV.A1,March 2013 TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A1,March 2013 HTS8A60H_HTS8A80H Package Dimension