HTC4A60S VDRM = 600 V IT(RMS) = 4 A ITSM = 33 A IGT = 5mA/12mA HTC4A60S 4 Quadrants Sensitive TRIAC Symbol FEATURES Repetitive Peak Off-State Voltage : 600V R.M.S On–State Current (IT(RMS) = 4A) Sensitive Gate Trigger Current - 5[mA] of IGT at I, II and III Quadrants. - 12[mA] of IGT at IV Quadrant. TO-126 Applications Heating control, Lighting control, Motor control such like dimmer, sensor light, Humidifier, etc. T1 T2 G General Description Semihow’s sensitive TRIAC product is a glass passivated device, has a low gate trigger current, high stability in gate trigger current to variation of operating temperature and high off state voltage. It is generally suitable for power and phase control in ac application. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified ) Symbol Parameter VDRM Repetitive Peak Off-State Voltage VRRM Repetitive Peak Reverse Voltage IT(AV) Average On-State Current IT(RMS) R.M.S. On-State Current ITSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive Fusing Current t = 10ms Forward Peak Gate Power Dissipation TJ = 125 °C Forward Average Gate Power Dissipation TJ = 125 °C, over any 20ms IFGM Forward Peak Gate Current VRGM Reverse Peak Gate Voltage I2t PGM PG(AV) TJ TSTG Conditions Ratings Unit 600 V 600 V 3.6 A 4 A 30/33 A 4.5 A2S 2 W 0.2 W TJ = 125 °C, pulse width ≤ 20us 1 A TJ = 125 °C, pulse width ≤ 20us 6 V Operating Junction Temperature -40~+125 oC Storage Temperature -40~+150 oC Sine wave, 50/60Hz, Gate open Full sine wave, TC = 109.5oC ◎ SEMIHOW REV.A1,March 2013 (TJ=25℃ unless otherwise specified ) Symbol Parameter IDRM Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current IGT Gate Trigger Current VGT Gate Trigger Voltage Voltage1 Conditions VD = VDRM VD = VDRM Min Typ Max Unit TJ=25oC - - 50 uA TJ=125oC - - 5 mA TJ=25oC - - 50 uA TJ =125oC - - 5 mA 1+, 1-, 3- - - 5 mA 3+ - - 12 mA 1+, 1-, 3- - - 1.5 V 3+ - - 2.0 V =125oC 0.2 - - V - - 1.6 V 10 - - V/us - 5 - mA Min Typ Max Unit VD = 12V, RL=330Ω VD = 12V, RL=330Ω VGD Non-Trigger Gate VTM Peak On-State Voltage IT = 5.6A, IG = 20mA dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=125oC Holding current IT= 0.2A IH VD = 12V, RL=330Ω, TJ Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Thermal Characteristics Symbol Parameter Conditions RθJC Thermal Resistance Junction to Case 3.6 oC/W RθJA Thermal Resistance Junction to Ambient 80 oC/W ◎ SEMIHOW REV.A1,March 2013 HTC4A60S Electrical Characteristics HTC4A60S Typical Characteristics Maximum allowable case temperature, TC [oC] 5 o 180 150o Power dissipation, PD [W] 4 120o 3 90o 2 60o 1 o 30 0 0 1 2 3 4 5 130 125 30o 60o 120 90o 115 120o 150o 180o 110 105 100 0 1 R.M.S. on state current, IT(RMS) [A] 2 3 4 5 R.M.S. on state current, IT(RMS) [A] Fig 1. R.M.S. current vs. Power dissipation Fig 2. R.M.S. current vs. Case temperature 101 40 Gate voltage, VG [V] Surge on state current, ITSM [A] 35 PGM(2W) 25[oC] I+GT3 PG(AV)(0.2W) 100 o 25[ C] I+GT1 I-GT1 I-GT3 101 102 25 60Hz 20 50Hz 15 10 5 VGD 10-1 100 30 103 0 100 104 Fig 4. Surge on state current rating (Non-repetitive) 2.5 2.5 2.0 2.0 VGT(toC) X 100(%) VGT(25oC) IGT(25oC) IGT(toC) X 100(%) Fig 3. Gate power characteristics 1.5 + I GT1 I-GT1 I-GT3 1.0 I+GT3 0.5 0.0 -50 -25 0 25 50 102 101 Time[cycles] Gate current, IG [mA] 1.5 V+GT1 V-GT1 V+GT3 V-GT3 1.0 0.5 75 100 125 150 o Junction Temperature, TJ[ C] Fig 5. Gate trigger current vs. junction temperature 0.0 -50 -25 0 25 50 75 100 125 150 Junction temperature, TJ[oC] Fig 6. Gate trigger voltage vs. junction temperature ◎ SEMIHOW REV.A1,March 2013 HTC4A60S Typical Characteristics 103 Thermal impedance [oC/W] Instantaneous on state current, IT [A] 102 25oC 125oC 1 10 100 RS=0.078Ω VTO=0.85V 10-1 0 1 2 3 4 5 102 101 100 10-2 10-1 Instantaneous on state voltage, VT [V] 100 101 Pulse Time [sec] Fig 7. Instantaneous on state current vs. Instantaneous on state voltage Fig 8. Thermal Impedance vs. pulse time Measurement of gate trigger current RL RL RG VG (1) Quadrant I VDD RG VG (2) Quadrant II RL VDD RG VG (3) Quadrant III RL VDD VDD RG VG (4) Quadrant IV Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. ◎ SEMIHOW REV.A1,March 2013 HTC4A60S Package Dimension TO-126 Dimensions in Millimeters ◎ SEMIHOW REV.A1,March 2013 HTC4A60S Package Dimension TO-126 (Forming) Dimensions in Millimeters ◎ SEMIHOW REV.A1,March 2013