BVDSS = 800 V RDS(on) typ = 0.92 ȍ HFH10N80 ID = 10 A 800V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ (Typ.)) Extended Safe Operating Area Lower RDS(ON) : 0.92 ȍ (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol 2 3 1.Gate 2. Drain 3. Source TC=25 unless otherwise specified Parameter Value Units 800 V VDSS Drain Source Voltage Drain-Source ID Drain Current – Continuous (TC = 25ఁ͚ 10.0 A Drain Current – Continuous (TC = 100ఁ͚ 6.32 A IDM Drain Current – Pulsed 40.0 A VGS Gate-Source Voltage ρͤ͡ V EAS Single Pulsed Avalanche Energy (Note 2) 920 mJ IAR Avalanche Current (Note 1) 10 0 10.0 A EAR Repetitive Avalanche Energy (Note 1) 24 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 240 W 1.92 W/ఁ -55 to +150 ఁ 300 ఁ Thermal Resistance Characteristics Symbol Parameter RșJC Junction-to-Case RșCS Case-to-Sink RșJA J Junction-to-Ambient i A bi Typ. Max. -- 0.52 0.24 -- -- 40 Units ఁ͠Έ క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡ HFH10N80 Dec 2005 Symbol y Parameter unless otherwise specified Test Conditions Min Typ y Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 5.0 A -- 0.92 1.15 ש VGS = 0 V V, ID = 250 Ꮃ 800 -- -- V ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ -- 0.99 -- ·͠ఁ VDS = 800 V, VGS = 0 V -- -- 1 Ꮃ VDS = 640 V, TC = 125ఁ -- -- 10 Ꮃ Off Characteristics BVDSS D i S Drain-Source Breakdown B kd V Voltage lt ԩBVDSS Breakdown Voltage Temperature Coefficient /ԩTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 Ꮂ IGSSR G t B d L Gate-Body Leakage k C Current, t Reverse VGS = -30 V, VDS = 0 V -- -- -100 Ꮂ -- 2800 3600 Ꮔ -- 230 300 Ꮔ -- 20 25 Ꮔ -- 60 120 Ꭸ -- 150 300 Ꭸ -- 120 240 Ꭸ -- 120 240 Ꭸ -- 58 75 Οʹ -- 17.5 -- Οʹ -- 22 -- Οʹ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 400 V, ID = 10.0 A, RG = 25 ש ͙ͿΠΥΖ͚͑ͥͦ͝ VDS = 640V, ID = 10.0 A, VGS = 10 V ͙ͿΠΥΖ͚͑ͥͦ͝ Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 10.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 40.0 VSD Source-Drain Source Drain Diode Forward Voltage IS = 10.0 10 0 A A, VGS = 0 V -- -- 14 1.4 V trr Reverse Recovery Time -- 950 -- Ꭸ Qrr Reverse Recovery Charge IS = 10.0 A, VGS = 0 V diF/dt = 100 A/ȝs (Note 4) -- 14.0 -- ȝC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=17.3mH, IAS=10.0A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD10.0A, di/dt300A/ȝs, VDDBVDSS , Starting TJ =25 qC 4 P 4. Pulse l T Testt : Pulse P l Width 300ȝs, 300 D Duty t C Cycle l 2% 5. Essentially Independent of Operating Temperature క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡ HFH10N80 Electrical Characteristics TC=25 qC HFH10N80 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Dra ain Current [A] 1 10 ID, Dra ain Current [A] 1 10 0 10 o 150 C o o -55 C 25 C 0 10 Notes : 1. 250ȝ s Pulse Test 2. TC = 25 -1 10 Notes : 1. VDS = 50V 2. 250ȝ s Pulse Test -1 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse e Drain Current [A] RDS(ON) [ȍ ], Drain-Sou urce On-Resistance 2.5 2.0 VGS = 10V VGS = 20V 1.5 1.0 1 10 0 10 150 25 Notes : 1. VGS = 0V 2. 250ȝ s Pulse Test Note : TJ = 25 -1 0.5 0 5 10 15 20 25 30 10 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 3000 2500 2000 Coss 1500 Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 VDS = 160V VGS, Gate-Source e Voltage [V] 3500 Capacitanc ce [pF] 0.2 ID, Drain Current [A] 10 VDS = 400V VDS = 640V 8 6 4 2 Note : ID = 10A 0 -1 10 0 0 10 1 10 0 10 20 30 40 50 60 70 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡ (continued) 3.0 RDDS(ON), (Normalized) Drain--Source On-Resistance 1.2 BV VDSS, (Normalized) Drain-So ource Breakdown Voltage HFH10N80 Typical Characteristics 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 ȝA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 5.0 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 Operation in This Area is Limited by R DS(on) 2 10 10 Ps ID, Dra ain Current [A] 1 10 1 ms 10 ms DC 0 10 -1 Notes : 10 6 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area 10 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Zș JC(t), Therma al Response ID, Dra ain Current [A] 8 100 Ps Figure 10. Maximum Drain Current vs Case C T Temperature t 0 D = 0 .5 10 N o te s : 1 . Z ș J C( t) = 0 .5 2 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z ș J C( t) 0 .2 -1 0 .1 0 .0 5 PDM 0 .0 2 0 .0 1 10 10 -5 t1 s in g le p u ls e -2 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Fi Figure 11. 11 Transient T i t Thermal Th l Response R Curve C క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡ HFH10N80 Fig 12. Gate Charge Test Circuit & Waveform 50Kȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡ HFH10N80 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period G Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡ HFH10N80 Package Dimension {vT {v TZw 4.8±0.20 .20 1.5±0.20 18.7±00.20 ±0 .2 ij3 13.9±0.20 14.9±0.20 19.9±±0.20 15.6±0.20 13 6±0.20 13.6 9.6±0.20 5.45typ 3.5±0.20 3±0.20 2±0.20 1±0.20 16.5±0.20 1.4±0.20 0.6±0.20 5.45typ క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡