SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: 80mΩ typical on-resistance Low Vf silicon carbide Schottky barrier diode included in parallel with body diode Very fast switching and no reverse recovery Isolated base plate Aluminum Nitride substrate Light Weight Low Profile Standard Package High Temperature Engineering Plastic Shell Construction Schematic Diagram: ALL RATINGS ARE @ TC = 25 C UNLESS OTHERWISE SPECIFIED. MAXIMUM RATINGS RATING SYMBOL MAX UNITS VDSS 1200 V ID 29 A CONTINUOUS DRAIN CURRENT, TC = 100 C ID 18 A PULSED DRAIN CURRENT (t ≤10μs, dc ≤1%) ID, pulse 80 A VGSS -6 to 22 V O Pd 125 W O Pd 96 W MAXIMUM THERMAL RESISTANCE (MOSFET) RJC 1.0 C/W MAXIMUM THERMAL RESISTANCE (DIODE) RJC 1.3 C/W MAXIMUM STORAGE TEMPERATURE RANGE Tstg -55 to 175 C MAXIMUM OPERATING TEMPERATURE RANGE Top -55 to 175 C DRAIN-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT O GATE - SOURCE VOLTAGE MAXIMUM POWER DISSIPATION, TC = 25 C (MOSFET) MAXIMUM POWER DISSIPATION, TC = 25 C (DIODE) ©2013 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 /www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B ELECTRICAL CHARACTERISTICS ALL RATINGS ARE @ TC = 25 C UNLESS OTHERWISE SPECIFIED. CHARACTERISTIC MIN DRAIN - SOURCE BREAKDOWN VOLTAGE (VGS = 0V, ID = 1mA) 1200 TYP MAX UNITS V ZERO GATE VOLTAGE DRAIN CURRENT (VDS = 1200V, VGS = 0V) 400 μA GATE - SOURCE LEAKAGE CURRENT (VGS = +22V, VDS = 0V) 100 nA GATE - SOURCE LEAKAGE CURRENT (VGS = -6V, VDS = 0V) -100 nA 4.0 V 125 135 mΩ GATE THRESHOLD VOLTAGE (VDS = VGS, ID = 4.4mA) 1.6 STATIC DRAIN – SOURCE ON - STATE RESISTANCE (VGS = 18V, ID = 10A) 80 0 Tj = 125 C TRANSCONDUCTANCE (VDS = 10V, ID = 10A) 3.7 S INPUT CAPACITANCE (VGS = 0V, VDS = 800V, f = 1MHz) 1850 pF OUTPUT CAPACITANCE (VGS = 0V, VDS = 800V, f = 1MHz) 175 pF Turn - on delay time (VDD = 400V, VGS = 18V, ID = 10A, RL = 40Ω, RG = 0Ω) 37 ns Rise time (VDD = 400V, VGS = 18V, ID = 10A, RL = 40Ω, RG = 0Ω) 33 ns Turn - off delay time (VDD = 400V, VGS = 18V, ID = 10A, RL = 40Ω, RG = 0Ω) 70 ns Fall time (VDD = 400V, VGS = 18V, ID = 10A, RL = 40Ω, RG = 0Ω) 28 ns Total gate charge (VDD = 400V, VGS = 18V, ID = 10A) 106 nC Gate - Source charge (VDD = 400V, VGS = 18V, ID = 10A) 27 nC Gate - Drain charge (VDD = 400V, VGS = 18V, ID = 10A) 31 nC Gate plateau voltage (VDD = 400V, VGS = 18V, ID = 10A) 9.7 V INVERSE DIODE CONTINUOUS, FORWARD CURRENT 29 A INVERSE DIODE DIRECT CURRENT, PULSED 80 A 1.5 V FORWARD VOLTAGE (Vgs = 0V, Is = 10A) 1.3 REVERSE RECOVERY TIME (If = 10A, Vr = 400V, di/dt = 150A/µs) 37 ns REVERSE RECOVERY CHARGE (If = 10A, Vr = 400V, di/dt = 150A/µs) 60 nC PEAK REVERSE RECOVERY CURRENT (If = 10A, Vr = 400V, di/dt = 150A/µs) 2.4 A ©2013 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 /www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B Mechanical Outline: Package: EPAK1 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2013 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 /www.sensitron.com [email protected]