DATA SHEET 2044 REV. C SENSITRON SEMICONDUCTOR S-100 SCREENING PROCEDURE All parts procured with S-100 Screening shall be 100% screened in accordance with one of the three following procedures, as applicable. All testing is performed at room temperature. For testing at high and low temperatures, Group A testing is required. DISCRETE SEMICONDUCTORS TEST / PROCESS Reference: MIL-PRF-19500, JANTXV Level MIL-STD-750 METHOD CONDITIONS 1 Pre-cap Visual Inspection 2074 Diodes 2069 Power FETs 2072 Transistors JANTXV level. 2 Temperature Cycling 1051 Test condition C or maximum storage temperature, whichever is less. 20 cycles, t (extremes) ≥ 10 minutes. 3 Thermal Response 3161 Power FETs 3131 Bipolar Transistor 3101 Diodes - 4 Hermetic Seal Fine Leak (Not applicable to double plug diodes and non-cavity products) 1071 5 6 Hermetic Seal Gross Leak Interim Electrical Parameters (Not applicable to case mounted rectifiers). High Temperature Reverse Bias (Not applicable to case mounted rectifiers). 1071 - Omit for double plug diodes. Test condition G or H. Maximum leak rate = 5x10 -8 atm-cc/s except 5x10 -7 atm-cc for devices with internal cavity > 0.3 cc. Maximum leak rate 5x10 -6 atm-cc/s for cavities 3-40 cc. (May be performed after step 9) Per device detail specification. Interim Electrical Parameters Power Burn-in - 7 8 9 1039 Transistors 1042 Power FETs 1038 Diodes and Rectifiers 1039 Bipolar Transistors 1042 Power FETs 1038 Diodes, Rectifiers and Zeners 1038 Case mount Rectifiers 1040 Thyristors 10 Final Electrical - Condition A 80% (minimum of rated VCB (bipolar), VGS (FET) or VDS (FET) as applicable. Condition B 80% (minimum) of rated VGS. Condition A- (Not required for case mounted rectifiers and zeners) 80% (minimum) of rated VR (Performed at 125° C for 45 to 100 Volt Schottky Devices, 100° C for 30 Volt Schottky Devices). Per device detail specification. Condition B 96 hours minimum. Condition A 96 hours minimum. Condition B 96 hours minimum. Condition A 48 hours minimum (performed at 125° C for 30 Volt Schottky Devices), 96 hours minimum. Per device detail specification. Notes: 1) Sequence and testing varies per device. 2) For diode bridges pre-cap visual is performed at the bridge assembly level prior to potting. • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • DATA SHEET 2044 REV. B SENSITRON SEMICONDUCTOR HYBRIDS SCREEN 1 2 3 4 5 6 7 8 9 Internal Visual Temperature Cycling Constant Acceleration Pre burn in Electrical Parameters Burn-in Final Electrical Parameters PDA Calculation Seal: a. Fine b. Gross External Visual, Mechanical Reference: MIL-PRF-38534, Class H MIL-STD-883 METHOD CONDITIONS 2017 1010 2001 - Condition B Condition C Condition A (min) Y1 orientation only. Per device detailed specification. 1015 1014 96 hours at 125° C minimum. Per device detailed specification. 10% - 2009 - MICROCIRCUITS Reference: MIL-PRF-38535, Class B; and MIL-STD-883, Test Method 5004 Class B SCREEN MIL-STD-883 METHOD CONDITIONS 1 2 3 3.1 4 5 6 7 8 9 Internal Visual Temperature Cycling Constant Acceleration Visual Inspection Pre burn in Electrical Parameters Burn-in Post burn in electrical Parameters PDA Calculation Final Electrical Parameters Seal: a. Fine b. Gross External Visual, Mechanical 2010 1010 2001 Condition B Condition C Condition E (min) Y1 orientation only. - Per device detailed specification. 1015 96 hours at 125° C minimum. Per device detailed specification - 5% max Per device detailed specification. 1014 - 2009 - DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] •