Preliminary Datasheet RJQ6015DPM 600V - 18A - IGBT and Diode Application: Inverter R07DS0848EJ0100 Rev.1.00 Jul 27, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 40 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0005ZB-A (Package name: TO-3PFM-5) 2 IGBT1 Diode1 1 3 IGBT2 Diode2 1. Gate (1) 2. Collector (1) 3. Emitter (1), Collector (2) 4. Emitter (2) 5. Gate (2) 5 12 34 5 4 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage/diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES/VR VGES IC Note1 IC Note1 Ratings 600 ±30 37 18 Unit V V A A IC(peak) Note3 IDF Note1 IDF(peak) Note3 PC Note2 j-c j-cd Tj Tstg 150 20 150 50 2.5 4.5 150 –55 to +150 A A A W °C/W °C/W °C °C Notes: 1. Limited by Tj max. 2. Value at Tc = 25°C 3. Pulse width limited by maximum safe operating area. Rev.1.00 Jul 27, 2012 Page 1 of 9 RJQ6015DPM Preliminary Electrical Characteristics IGBT1, IGBT2 (Ta = 25°C) Item Collector to emitter breakdown voltage/Diode reverse voltage Zero gate voltage collector current /Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time Symbol VBR(CES)/VR Min 600 Typ — Max — Unit V Test Conditions IC =10 A, VGE = 0 ICES /IR — — 5 A VCE = 600 V, VGE = 0 IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) — 4.0 — — — — — — — — — — — — — 1.6 2.0 1900 120 50 78 12 32 50 40 135 ±1 6.0 2.2 — — — — — — — — — — A V V V pF pF pF nC nC nC ns ns ns VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 37 A, VGE = 15 V Note4 IC =75 A, VGE = 15 V Note4 tf Eon Eoff Etotal tsc — — — — 3.0 40 0.65 0.4 1.05 5.0 — — — — — ns mJ mJ mJ s Symbol VF IR trr Qrr Irr Min — — Typ 1.4 100 0.18 4.2 Max 1.9 1 Unit V A ns C A VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 37 A VCC = 300 V VGE = 15 V IC = 37 A Rg = 5 Inductive load VCC 360 V, VGE = 15 V Notes: 4. Pulse test Diode1, Diode2 Item Forward voltage Reverse current Reverse recovery Time FRD reverse recovery charge FRD peak reverse recovery current Rev.1.00 Jul 27, 2012 (Ta = 25°C) Test conditions IF = 30 A VR = 600 V IF = 30 A di/dt = 100 A/s Page 2 of 9 RJQ6015DPM Preliminary Main Characteristics Maximum Safe Operation Area Turn-off SOA 200 PW 100 10 0 = μs 10 Collector Current IC (A) Collector Current IC (A) 1000 μs 10 1 0.1 1 VGE = 15 V Tj = 125°C Single pulse 0 10 100 0 1000 200 400 600 800 Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 150 Tc = 25°C Pulse Test 15 V 10 V 100 18 V 75 50 VGE = 8 V 25 0 12 V Tc = 150°C Pulse Test 12 V Collector Current IC (A) Collector Current IC (A) 50 Collector to Emitter Voltage VCE (V) 125 125 15 V 100 10 V 18 V 75 50 VGE = 8 V 25 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 5 Tc = 25°C Pulse Test 4 IC = 37 A 75 A 3 2 1 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Collector to Emitter Satularion Voltage VCE(sat) (V) Collector to Emitter Satularion Voltage VCE(sat) (V) 100 Tc = 25°C Single pulse 150 Rev.1.00 Jul 27, 2012 150 5 Tc = 150°C Pulse Test 4 IC = 37 A 75 A 3 2 1 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Page 3 of 9 RJQ6015DPM Preliminary Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) Collector Current IC (A) 150 125 Tc = 25°C 150°C 100 75 50 25 0 VCE = 10 V Pulse Test 0 4 8 12 16 20 Gate to Emitter Cutoff Voltage VGE(off) (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Transfer Characteristics (Typical) 2.8 VGE = 15 V Pulse Test IC = 75 A 2.4 2.0 37 A 1.6 1.2 −25 18.5 A 0 25 50 75 100 125 150 Case Temparature Tc (°C) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) 10 8 IC = 10 mA 6 4 1 mA 2 VCE = 10 V Pulse Test 0 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Rev.1.00 Jul 27, 2012 Page 4 of 9 RJQ6015DPM Preliminary Switching Characteristics (Typical) (1) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 tf td(off) 100 td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 1 10 Switching Characteristics (Typical) (2) 100 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 1 Eoff 0.1 Eon 0.01 100 1 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 10 td(off) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 td(on) 100 tf tr VCC = 300 V, VGE = 15 V IC = 37 A, Tc = 25°C 10 1 VCC = 300 V, VGE = 15 V IC = 37 A, Tc = 150°C 1 Eon Eoff 0.1 10 100 1 1000 Swithing Energy Losses E (mJ) VCC = 300 V, VGE = 15 V IC = 37 A, Rg = 5 Ω td(off) 100 td(on) 10 25 50 tf 75 100 125 Case Temperature Tc (°C) (Inductive load) 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) tr 10 Gate Registance Rg (Ω) (Inductive load) Gate Registance Rg (Ω) (Inductive load) Switching Times t (ns) 100 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) Rev.1.00 Jul 27, 2012 10 150 10 VCC = 300 V, VGE = 15 V IC = 37 A, Rg = 5 Ω 1 Eon Eoff 0.1 25 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 9 RJQ6015DPM Preliminary Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes Cres 10 0 50 100 150 200 250 300 800 IC = 37 A Tc = 25°C 600 VGE 8 4 200 VCE 0 0 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) VCC = 300 V IF = 30 A Tc = 150°C 150 100 25°C 50 0 40 80 120 160 80 0 100 VCC = 300 V IF = 30 A 1.6 1.2 0.8 Tc = 150°C 0.4 25°C 0 200 0 40 80 120 160 200 Diode Current Slope diF/dt (A/μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 16 120 VCC = 300 V IF = 30 A Forward Current IF (A) Reverse Recovery Current Irr (A) 60 2.0 Diode Current Slope diF/dt (A/μs) 12 Tc = 150°C 8 4 25°C 0 100 Tc = 25°C 150°C 80 60 40 20 VCE = 0 V Pulse Test 0 0 40 80 120 160 200 Diode Current Slope diF/dt (A/μs) Rev.1.00 Jul 27, 2012 40 Reverse Recovery Charge vs. Diode Current Slope (Typical) 300 0 20 Gate Charge Qg (nc) Reverse Recovery Time vs. Diode Current Slope (Typical) 200 12 400 Collector to Emitter Voltage VCE (V) 250 16 VCC = 300 V Gate to Emitter Voltage VGE (V) VGE = 0 V f = 1 MHz Tc = 25°C Collector to Emitter Voltage VCE (V) Capacitance C (pF) 10000 Dynamic Input Characteristics (Typical) 0 1 2 3 4 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 RJQ6015DPM Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 2.5 °C/W, Tc = 25°C 0.1 0.1 0.05 0.02 PDM D= 0.01 1 shot pulse 0.01 100 μ 1m PW T PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 4.5°C/W, Tc = 25°C 0.05 0.1 0.02 0.01 1 shot pulse 0.01 100 μ PDM PW T PW T 1m 10 m 100 m Pulse Width Rev.1.00 Jul 27, 2012 D= 1 10 100 PW (s) Page 7 of 9 RJQ6015DPM Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% td(off) tf 10% td(on) tr Waveform Diode Reverse Recovery Time Test Circuit VCC IF D.U.T IF diF/dt L trr 0 Irr Rg Rev.1.00 Jul 27, 2012 0.5 Irr 0.9 Irr Page 8 of 9 RJQ6015DPM Preliminary Package Dimensions JEITA Package Code SC-93 RENESAS Code PRSS0005ZB-A Previous Code TO-3PFM-5 15.6 ± 0.3 Unit: mm 5.5 ± 0.3 19.9 ± 0.3 +0.4 −0.2 2.0 ± 0.3 5.0 ± 0.3 φ3.2 MASS[Typ.] 5.3g 5.0 ± 0.3 Package Name TO-3PFM-5 2.25 ± 0.3 19.7 ± 0.5 3.2 ± 0.3 1.40 0.86 0.66 +0.2 −0.1 +0.2 0.9 −0.1 2.725 2.725 Ordering Information Orderable Part Number RJQ6015DPM-00#T0 Rev.1.00 Jul 27, 2012 Quantity 360 pcs Shipping Container Box (tube) Page 9 of 9 Notice 1. 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