Preliminary Datasheet HAF2014 R07DS0506EJ0400 (Previous: REJ03G1140-0300) Rev.4.00 Jul 08, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 4 G 1 2 Gate resistor Temperature Sensing Circuit Latch Circuit 1. Gate 2. Drain 3. Source 4. Drain Gate Shutdown Circuit 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 60 16 –2.5 40 80 40 50 150 –55 to +150 Unit V V V A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Ta = 25C R07DS0506EJ0400 Rev.4.00 Jul 08, 2011 Page 1 of 6 HAF2014 Preliminary Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH (sd) 1 IIH (sd) 2 Tsd VOP Min 3.5 — — — — — — — 3.5 Typ — — — — — 0.8 0.35 175 — Max — 1.2 100 50 1 — — — 12 Unit V V A A A mA mA C V Test Conditions Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature Electrical Characteristics (Ta = 25C) Item Symbol ID1 ID2 Min 15 — Typ — — Max — 10 Unit A mA V (BR) DSS V (BR) GSS V (BR) GSS 60 16 — — — — V V IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss –2.5 — — — — — — — 1.0 — — 8 — — — — — — 0.8 0.35 — — 25 15 16 940 — 100 50 1 –100 — — 10 2.25 33 20 — — V A A A A mA mA A V m m S pF Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time td (on) tr td (off) tf VDF trr — — — — — — 10.7 66 15.5 19 1 200 — — — — — — s s s s V ns Over load shut down operation time Note4 tos1 — 1 — ms Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance IGSS1 IGSS2 IGSS3 IGSS4 Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 300 A, VDS = 0 IG = –100 A, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 4 V Note 3 ID = 20 A, VGS = 10 V Note 3 ID = 20 A, VDS = 10 V Note 3 VDS = 10 V, VGS = 0 f = 1 MHz ID = 20 A VGS = 5 V RL = 1.5 IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/dt = 50 A/s VGS = 5 V, VDD = 16 V Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. R07DS0506EJ0400 Rev.4.00 Jul 08, 2011 Page 2 of 6 HAF2014 Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) Thermal shut down 200 Operation area 60 Drain Current Channel Dissipation Pch (W) 80 40 20 0 50 100 150 Case Temperature 10 50 DC 20 10 5 200 Drain Current 40 10 (T s m s c= 25 °C 5 10 ) 20 50 100 Tc = –25°C 25°C 30 4V 40 = μs m 50 ID (A) 60 ion 0 Typical Transfer Characteristics Drain Current ID (A) 80 at 1 Drain to Source Voltage VDS (V) Tc (°C) Pulse Test 8V 6V 5V 10 V er Operation in this area is 2 limited by RDS (on) 1 Typical Output Characteristics 100 Op PW 0.5 Ta = 25°C 0.3 0.3 0.5 1 2 0 10 μs 100 VGS = 3.5 V 20 75°C 20 10 VDS = 10 V Pulse Test 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.4 ID = 20 A 0.3 0.2 10 A 0.1 5A 0 0 2 4 6 8 10 Gate to Source Voltage VGS (V) R07DS0506EJ0400 Rev.4.00 Jul 08, 2011 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.5 1 50 VGS = 4 V 20 10 V 10 5 2 Pulse Test 1 1 2 5 10 20 Drain Current 50 100 200 ID (A) Page 3 of 6 Preliminary Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0.06 5 A, 10 A ID = 20 A 0.04 VGS = 4 V ID = 20 A 0.02 5 A, 10 A 10 V 0 –40 0 40 80 Case Temperature 120 160 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAF2014 100 VDS = 10 V Pulse Test 50 Tc = –25°C 20 10 25°C 75°C 5 2 1 0.5 500 500 Switching Time t (μs) Reverse Recovery Time trr (ns) 1000 200 100 50 di / dt = 50 A / μs VGS = 0, Ta = 25°C 1 2 5 10 Reverse Drain Current 20 10 20 50 VGS = 5 V, VDD = 30 V PW = 300 μs, duty ≤ 1 % 200 100 tr 50 tf 20 td(off) td(on) 10 0.5 50 IDR (A) 1 2 5 10 Drain Current 20 50 ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 50 10000 Pulse Test 40 Capacitance C (pF) Reverse Drain Current IDR (A) 5 Switching Characteristics 1000 10 0.5 2 Drain Current ID (A) Tc (°C) Body-Drain Diode Reverse Recovery Time 20 1 VGS = 5 V 30 0V 20 10 3000 1000 Coss 300 100 30 0 VGS = 0 f = 1 MHz 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0506EJ0400 Rev.4.00 Jul 08, 2011 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Page 4 of 6 HAF2014 Preliminary Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 12 10 VDD = 9 V 8 6 16 V 4 2 0 0.1 1 10 100 200 180 160 140 120 ID = 5 A 100 0 2 4 6 8 Gate to Source Voltage Shutdown Time of Load-Short Test PW (S) 10 VGS (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c θch – c = 2.5°C/W, Tc = 25°C 0.1 0.1 0.05 2 0.03 0.0 0 . 0 1 1 o sh D= PDM e tp 0.01 10 μ uls PW T PW T 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 5V 50 Ω VDD = 30 V 10% 90% td(on) R07DS0506EJ0400 Rev.4.00 Jul 08, 2011 10% tr 90% td(off) tf Page 5 of 6 HAF2014 Preliminary Package Dimensions Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 1.26 ± 0.15 15.0 ± 0.3 6.4 18.5 ± 0.5 1.27 +0.2 –0.1 8.0 4.44 ± 0.2 +0.1 –0.08 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 Ordering Information Orderable Part Number HAF2014-90 R07DS0506EJ0400 Rev.4.00 Jul 08, 2011 Quantity Max: 50 pcs/sack Shipping Container Sack Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2011 Renesas Electronics Corporation. All rights reserved. Colophon 1.1