Target Specifications Datasheet RJF0612DPE R07DS0903EJ0100 Rev.1.00 Nov 01, 2012 60V - 50A - N Channel Thermal FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features Logic level operation (4 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Power supply voltage applies 12 V and 24 V. For Industrial applications Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) D 4 G 1 2 3 Gate Resistor Temperature Sensing Circuit Latch Circuit 1. Gate 2. Drain 3. Source 4. Drain Current Limitation Circuit Gate Shut-down Circuit S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage VGSS Drain current ID Note3 Body-drain diode reverse drain current IDR Note 2 Avalanche current IAP Avalanche energy EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25C 2. Tch = 25C, Rg 50 3. It provides by the current limitation lower bound value. R07DS0903EJ0100 Rev.1.00 Nov 01, 2012 Ratings 60 16 –2.5 50 50 15 964 100 150 –55 to +150 Unit V V V A A A mJ W C C Page 1 of 7 RJF0612DPE Target Specifications Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Symbol VIH VIL IIH1 IIH2 IIL Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min 3.5 — — — — — — — 3.5 50 Typ — — — — — 0.8 0.35 175 — — Max — 1.2 100 50 1 — — — 12 — Unit V V A A A mA mA C V A Test Conditions Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature VGS = 5 V, VDS = 10 V Note 4 Notes: 4. Pulse test Electrical Characteristics (Ta = 25°C) Item Drain current Symbol Min Typ Max Unit ID1 ID2 ID3 — — 50 60 — — — — 170 10 — — A mA A V VGS = 3.5 V, VDS = 10 V Note 5 VGS = 1.2 V, VDS = 10 V VGS = 5 V, VDS = 10 V Note 5 ID = 10 mA, VGS = 0 16 –2.5 — — — — — — — 1.1 26 — — — — — — — — — 0.8 0.35 — — 30 7.8 5.9 1974 — — 100 50 1 –100 — — 10 2.1 — 10 7.5 — V V A A A A mA mA A V S m m pF IG = 800 A, VDS = 0 IG = –100 A, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 32 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 25 A, VDS = 10 V Note 5 ID = 25 A, VGS = 4 V Note 5 ID = 25 A, VGS = 10 V Note 5 VDS = 10 V, VGS = 0, f = 1MHz 14.0 63.2 57.4 84.5 0.9 — — — — — s s s s V VGS = 5 V, ID= 25 A, RL = 1.2 IF = 50 A, VGS = 0 diF/dt = 50 A/s VGS = 5 V, VDD = 16 V VGS = 5 V, VDD = 24 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS VGS(off) |yfs| RDS(on) Output capacitance RDS(on) Coss Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Body-drain diode forward voltage VDF — — — — — Body-drain diode reverse recovery time trr — 112 — ns tos1 — — 0.5 0.36 — — ms ms Over load shut down Note 6 operation time tos2 Test Conditions IF = 50 A, VGS = 0 Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. R07DS0903EJ0100 Rev.1.00 Nov 01, 2012 Page 2 of 7 RJF0612DPE Target Specifications Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 Drain Current ID (A) Channel Dissipation Pch (W) 200 150 100 50 Thermal shut down operation area 100 1 m s DC Operation (Tc = 25°C) 10 PW = 10 ms 1 Operation in this area is limited by RDS(on) Ta = 25°C 50 150 200 100 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 10 V VDS = 10 V Pulse Test 7.0 V 4.0 V 150 5.0 V 100 10 1 Case temperature Tc (°C) 200 Drain Current ID (A) 100 0.1 0.1 VGS = 3.5 V 4.5 V 50 Drain Current ID (A) 0 40 30 20 10 Tc = 75°C 25°C Pulse Test 2 4 6 8 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Saturation Voltage vs. Gate to Source Voltage Static Drain to Source State Resistance vs. Drain Current 400 Pulse Test 300 200 ID = 25 A 100 0 0 10 10 A 5A 2 4 6 8 10 Gate to Source Voltage VGS (V) R07DS0903EJ0100 Rev.1.00 Nov 01, 2012 Drain Source On Sate Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) 0 1000 Pulse Test 100 4V 10 VGS = 10 V 1 1 10 100 Drain Current ID (A) Page 3 of 7 Target Specifications Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 14 Pulse Test 5A 12 ID = 25, 10 A 10 8 VGS = 4 V 5A 10 A 6 ID = 25 A 4 VGS = 10 V 2 -50 -25 0 25 50 75 100 125 150 Case Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) RJF0612DPE 1000 VDS = 10 V Pulse Test Tc = 25°C 100 75°C 10 1 0.1 0.1 1 Tc (°C) 1000 di / dt = 50 A / μs VGS = 0, Ta = 25°C Switching Time t (μs) Reverse Recovery Time trr (ns) Switching Characteristics 100 tf 100 tr td(off) td(on) 10 VGS = 10 V, VDD = 30 V PW = 300 μs, duty ≤ 1% 10 0.1 1 10 Reverse Drain Current 1 0.1 100 10 100 ID (A) Typical Capacitance vs. Drain to Source Voltage 50 10000 VGS = 0 f = 1 MHz 40 30 Capacitance C (pF) Reverse Drain Current IDR (A) 1 Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage VGS = 0 V 5V 20 10 Pulse Test 0 100 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 1000 10 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0903EJ0100 Rev.1.00 Nov 01, 2012 Coss 1000 100 0 10 20 30 40 50 60 Drain to Source Voltage VDS (V) Page 4 of 7 RJF0612DPE Target Specifications 10 Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) VGS (V) 16 Gate to Source Voltage Gate to Source Voltage vs. Shutdown Time of Load-Short Test 14 12 8 VDD = 16 V 6 4 24 V 2 0 100 1000 10000 200 180 160 140 120 ID = 5 A 100 0 2 4 6 Gate to Source Voltage Shutdown Time of Load-Short Test Pw (μs) 8 10 VGS (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θ ch- c(t) = γ s (t) • θ ch- c θ ch- c = 1.25°C/W, Tc = 25°C 0.05 0.02 0.03 PDM 0.01 ulse tp ho 1s 0.01 10 μ 100 μ D= PW T PW T 1m 10 m 100 m 1 10 Pulse Width PW (S) R07DS0903EJ0100 Rev.1.00 Nov 01, 2012 Page 5 of 7 RJF0612DPE Target Specifications Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin RL 10% Vout Vin 10V 50 Ω 10% VDD = 30 V 90% td(on) Avalanche Test Circuit VDS Monitor 10% tr 90% td(off) tf Avalanche Waveform L EAR = 1 2 L • IAP2 • V(BR)DSS V(BR)DSS – VDD IAP Monitor V(BR)DSS Rg Vin 10 V D. U. T IAP VDD ID 50 Ω 0 R07DS0903EJ0100 Rev.1.00 Nov 01, 2012 VDS VDD Page 6 of 7 RJF0612DPE Target Specifications Package Dimensions JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g (1.4) 4.44 ± 0.2 7.8 6.6 (1.5) 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 + 0.3 – 0.5 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Orderable Part Number RJF0612DPE-00-J3 Note: Quantity 1000 pcs Shipping Container Taping The symbol of 2nd "-" is occasionally presented as "#". R07DS0903EJ0100 Rev.1.00 Nov 01, 2012 Page 7 of 7 Notice 1. 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