Target Specifications Datasheet RJF0618JPE 60V-40A Silicon N Channel Thermal FET Power Switching R07DS1069EJ0100 Rev.1.00 May 15, 2013 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features • • • • • • • • Logic level operation (4 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Power supply voltage applies 12 V and 24 V. AEC-Q101 Compliant High endurance capability against to ESD. Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 2,4 4 1 1 2 3 Gate Resistor Temperature Sensing Circuit Latch Circuit 1. Gate 2. Drain 3. Source 4. Drain Current Limitation Circuit Gate Shut-down Circuit 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage VGSS Drain current ID Note3 Body-drain diode reverse drain current IDR Avalanche current IAP Note 2 Avalanche energy EAR Note 2 Channel dissipation Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25°C 2. Tch = 25°C, Rg ≥ 50 Ω 3. It provides by the current limitation lower bound value. R07DS1069EJ0100 Rev.1.00 May 15, 2013 Ratings 60 16 –2.5 40 40 12 617 50 150 –55 to +150 Unit V V V A A A mJ W °C °C Page 1 of 7 RJF0618JPE Target Specifications Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Note; Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min 3.5 — — — — — — — 3.5 40 Typ — — — — — 0.8 0.35 175 — — Max — 1.2 100 50 1 — — — 12 — Unit V V μA μA μA mA mA °C V A Test Conditions Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature VGS = 5 V, VDS = 10 V Note 4 4. Pulse test Electrical Characteristics (Ta = 25°C) Item Drain current Symbol Min Typ Max Unit ID1 ID2 ID3 — — 40 60 — — — — 67 10 — — A mA A V VGS = 3.5 V, VDS = 10 V Note 5 VGS = 1.2 V, VDS = 10 V VGS = 5 V, VDS = 10 V Note 5 ID = 10 mA, VGS = 0 16 –2.5 — — — — — — — 1.1 20 — — — — — — — — — 0.8 0.35 — — 41 17 12 795 — — 100 50 1 –100 — — 10 2.1 — 25 19 — V V μA μA μA μA mA mA μA V S mΩ mΩ pF IG = 800 μA, VDS = 0 IG = –100 μA, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 32 V, VGS = 0, Tc = 110°C VDS = 10 V, ID = 1 mA ID = 20 A, VDS = 10 V Note 5 ID = 20 A, VGS = 4 V Note 5 ID = 20 A, VGS = 10 V Note 5 VDS = 10 V, VGS = 0, f = 1MHz 6 21.6 7.2 12.5 0.9 — — — — — μs μs μs μs V VGS = 10 V, ID= 20 A, RL = 1.5 Ω IF = 40 A, VGS = 0 diF/dt = 50 A/μs VGS = 5 V, VDD = 16 V VGS = 5 V, VDD = 24 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS VGS(off) |yfs| Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Output capacitance RDS(on) RDS(on) Coss Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Body-drain diode forward voltage VDF — — — — — Body-drain diode reverse recovery time trr — 113 — ns tos1 tos1 — — 0.48 0.31 — — ms ms Static drain to source on state resistance Over load shut down Note 6 operation time Test Conditions IF = 40 A, VGS = 0 Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. R07DS1069EJ0100 Rev.1.00 May 15, 2013 Page 2 of 7 RJF0618JPE Target Specifications Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 Thermal shut down Operation area 50 ID (A) Pch (W) 60 Drain Current Channel Dissipation 40 30 20 10 0 0 50 100 150 Case Temperature 10 1 ms PW = 10 ms 1 Operation in this area is limited by RDS (on) 0.1 0.01 200 VDS = 10 V Pulse Test 4V 8V 5V 40 VGS = 3 V 30 20 ID (A) 60 Drain Current ID (A) Drain Current 100 40 10 V 50 10 Typical Transfer Characteristics 9V 70 1 Drain to Source Voltage VDS (V) Tc (°C) Typical Output Characteristics 80 0.1 DC Operation (Tc = 25°C) 30 20 Tc = –40°C 25°C 10 10 Pulse Test 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 600 400 ID = 20 A 200 10 A 5A 0 0 2 4 6 8 Gate to Source Voltage VGS (V) R07DS1069EJ0100 Rev.1.00 May 15, 2013 10 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 800 1 1000 Pulse Test 100 VGS = 4 V 10 1 0.1 10 V 1 Drain Current 10 100 ID (A) Page 3 of 7 Target Specifications Static Drain to Source on State Resistance vs. Temperature 35 Pulse Test ID = 20 A 30 10 A 5A 25 20 A 20 VGS = 4 V 15 ID = 5, 10 A 10 10 V 5 –50 –25 0 25 50 75 100 125 150 Case Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) RJF0618JPE 100 25°C 10 150°C 1 0.1 0.1 Tc (°C) 10 100 Switching Characteristics 100 1000 Switching Time t (μs) Reverse Recovery Time trr (ns) 1 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 100 tr tf 10 td(off) td(on) di / dt = 50 A / μs VGS = 0, Ta = 25°C 10 0.1 1 10 Reverse Drain Current VGS = 10 V, VDD = 30 V PW = 300 μs, duty ≤ 1 % 1 0.1 100 1 10 Drain Current IDR (A) 100 ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 40 10000 VGS = 0 f = 1 MHz Pulse Test Capacitance C (pF) Reverse Drain Current IDR (A) Tc = –40°C VDS = 10 V Pulse Test 30 20 0V VGS = 5 V 10 3000 1000 300 100 Coss 30 0 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS1069EJ0100 Rev.1.00 May 15, 2013 0 10 20 30 40 50 60 Drain to Source Voltage VDS (V) Page 4 of 7 RJF0618JPE Target Specifications Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 16 14 12 10 8 24 V VDD = 16 V 6 4 2 0 10 100 1000 Normalized Transient Thermal Impedance γ s (t) Shutdown Time of Load-Short Test 10000 200 180 160 140 120 ID = 5 A 100 0 Pw (μS) 2 4 6 Gate to Source Voltage 8 10 VGS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c θch – c = 2.5°C/W, Tc = 25°C 0.1 0.1 0.05 0.03 0.01 10 μ 100 μ D= PDM 0.02 e 1 0.0 uls tp o h 1s PW T PW T 1m 10 m 100 m 1 10 Pulse Width PW (S) R07DS1069EJ0100 Rev.1.00 May 15, 2013 Page 5 of 7 RJF0618JPE Target Specifications Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 Ω 10% VDD = 30 V 90% td(on) Avalanche Test Circuit VDS Monitor 10% tr 90% td(off) tf Avalanche Waveform L EAR = 1 2 L · IAP2 · V(BR)DSS V(BR)DSS – VDD IAP Monitor V(BR)DSS Rg Vin 10 V D. U. T IAP VDD ID 50 Ω 0 R07DS1069EJ0100 Rev.1.00 May 15, 2013 VDS VDD Page 6 of 7 RJF0618JPE Target Specifications Package Dimensions JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Orderable Part Number RJF0618JPE-00-J3 Note: Quantity 1000 pcs Shipping Container Taping The symbol of 2nd "-" is occasionally presented as "#". R07DS1069EJ0100 Rev.1.00 May 15, 2013 Page 7 of 7 Notice 1. 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