PreliminaryData Sheet μPG2411T7C R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz DESCRIPTION The μPG2411T7C is a GaAs MMIC SPDT (Single Pole Double Throw) switch which was designed for 2 GHz to 6 GHz applications, including dual-band wireless LAN. This device can operate at frequencies from 2 GHz to 6 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin plastic RTSON (Rectangle Thin Small Out-line Non-leaded) package. And this package is suitable for high-density surface mounting. FEATURES • Switch control voltage • • • • : Vcont (H) = 3.0 V TYP. : Vcont (L) = 0 V TYP. Low insertion loss : Lins = 0.50 dB TYP. @ f = 2.5 GHz : Lins = 0.70 dB TYP. @ f = 6.0 GHz High isolation : ISL = 25 dB TYP. @ f = 2.5 GHz : ISL = 25 dB TYP. @ f = 6.0 GHz Handling power : Pin (1 dB) = +30.5 dBm TYP. @ f = 2.5 GHz : Pin (1 dB) = +30.5 dBm TYP. @ f = 6.0 GHz High-density surface mounting : 6-pin plastic RTSON package (2.0 × 1.3 × 0.37 mm) APPLICATIONS • Wireless LAN (IEEE802.11a/b/g/n) ORDERING INFORMATION Part Number μPG2411T7C-E3 Order Number μPG2411T7C-E3-A Package 6-pin plastic RTSON (Pb-Free) Marking G6G Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPG2411T7C CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 1 of 9 μPG2411T7C PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View) 1 G6G 2 3 (Bottom View) 6 RF1 1 Vcont1 6 6 1 5 GND 2 RFC 5 5 2 4 RF2 3 Vcont2 4 4 3 Pin No. Pin Name 1 2 3 4 5 6 RF1 GND RF2 Vcont2 RFC Vcont1 Remark Exposed pad : GND SW TRUTH TABLE ON Path RFC-RF1 RFC-RF2 Vcont1 High Low Vcont2 Low High ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Switch Control Voltage Symbol Vcont Ratings Note +6.0 Unit V Pin PD TA Tstg +31.0 150 −40 to +90 −55 to +150 dBm mW °C °C Input Power Power Dissipation Operating Ambient Temperature Storage Temperature Note: ⎪Vcont1 − Vcont2⎪ ≤ 6.0 V RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Operating Frequency Switch Control Voltage (H) Switch Control Voltage (L) Control Voltage Difference Symbol f Vcont (H) Vcont (L) ΔVcont (H), ΔVcont (L) MIN. 2.0 2.8 −0.2 −0.1 TYP. − 3.0 0 0 MAX. 6.0 3.3 0.2 0.1 Unit GHz V V V Note Note: ΔVcont (H) = Vcont1 (H) − Vcont2 (H) ΔVcont (L) = Vcont1 (L) − Vcont2 (L) R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 2 of 9 μPG2411T7C ELECTRICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) Parameter Insertion Loss Symbol Lins Isolation ISL Return Loss RL 1 dB Loss Compression Note Input Power 2nd Harmonics Pin (1 dB) 2f0 3rd Harmonics 3f0 Switch Control Current Switch Control Speed Icont tSW Note: Test Conditions f = 2.4 to 2.5 GHz f = 4.9 to 6.0 GHz f = 2.4 to 2.5 GHz f = 4.9 to 6.0 GHz f = 2.4 to 2.5 GHz f = 4.9 to 6.0 GHz f = 2.5 GHz f = 6.0 GHz f = 2.5 GHz, Pin = +20 dBm f = 6.0 GHz, Pin = +20 dBm f = 2.5 GHz, Pin = +20 dBm f = 6.0 GHz, Pin = +20 dBm No RF input 50% CTL to 90/10% RF MIN. − − 20 20 11 11 − − − − − − − − TYP. 0.50 0.70 25 25 17 17 +30.5 +30.5 80 70 80 70 0.1 20 MAX. 0.8 1.0 − − − − − − − − − − 1.0 100 Unit dB dB dB dB dB dB dBm dBm dBc dBc dBc dBc μA ns Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear range. CAUTION It is necessary to use DC blocking capacitors with this device. The value of DC blocking capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 3 of 9 μPG2411T7C EVALUATION CIRCUIT 1 000 pF C1 1 Vcont1 RF1 6 2 RFC 5 C1 Note 3 Vcont2 RF2 4 C1 1 000 pF Note: C1: 8 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. APPLICATION INFORMATION C1 Switch C1 LESD C1 • C1 are DC blocking capacitors external to the device. The value may be tailored to provide specific electrical responses. • The RF ground connections should be kept as short as possible and connected to directly to a good RF ground for best performance. • LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 4 of 9 μPG2411T7C TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 8 pF, unless otherwise specified) RFC-RF1/RF2 ISOLATION vs. FREQUENCY RFC-RF1/RF2 INSERTION LOSS vs. FREQUENCY 0 –0.2 –5 –0.4 –10 Isolation ISL (dB) –0.6 –0.8 –1.0 –1.2 –1.4 –25 –30 –35 –40 –1.8 –45 1 2 5 4 3 –50 0 6 1 2 5 4 3 6 Frequency f (GHz) Frequency f (GHz) RFC RETURN LOSS vs. FREQUENCY RF1/RF2 RETURN LOSS vs. FREQUENCY 0 0 –5 –10 Return Loss RL (dB) –5 –10 –15 –20 –25 –30 –35 –15 –20 –25 –30 –35 –40 –40 –45 –45 –50 0 1 2 5 4 3 –50 0 6 1 2 5 4 3 6 Frequency f (GHz) Frequency f (GHz) RFC-RF1/RF2 INSERTION LOSS, Icont vs. INPUT POWER RFC-RF1/RF2 INSERTION LOSS, Icont vs. INPUT POWER f = 2.5 GHz Lins –1.0 1.0 0 0.9 –0.5 0.8 –1.5 0.7 –2.0 0.6 –2.5 0.5 –3.0 0.4 –3.5 0.3 –4.0 0.2 Icont –4.5 –5.0 18 20 22 24 26 28 30 0.1 32 0 34 Input Power Pin (dBm) Insertion Loss Lins (dB) 0 –0.5 Switch Control Current Icont (μA) Return Loss RL (dB) –20 –1.6 –2.0 0 Insertion Loss Lins (dB) –15 1.0 f = 6.0 GHz –1.0 0.9 0.8 Lins –1.5 0.7 –2.0 0.6 –2.5 0.5 –3.0 0.4 –3.5 0.3 –4.0 0.2 Icont –4.5 –5.0 18 20 22 24 26 28 30 0.1 32 Switch Control Current Icont (μA) Insertion Loss Lins (dB) 0 0 34 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 5 of 9 RFC-RF1/RF2 Pin (1 dB) vs. SWITCH CONTROL VOLTAGE (H) 34 33 f = 2.5 GHz 32 31 30 29 28 27 26 25 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 Switch Control Voltage (H) Vcont (H) (V) 1 dB Loss Compression Input Power Pin (1 dB) (dBm) 1 dB Loss Compression Input Power Pin (1 dB) (dBm) μPG2411T7C RFC-RF1/RF2 Pin (1 dB) vs. SWITCH CONTROL VOLTAGE (H) 34 33 f = 6.0 GHz 32 31 30 29 28 27 26 25 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 Switch Control Voltage (H) Vcont (H) (V) Remark The graphs indicate nominal characteristics. R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 6 of 9 μPG2411T7C PACKAGE DIMENSIONS 6-PIN PLASTIC RTSON (UNIT: mm) (Side View) (Top View) 1.3±0.1 2.0±0.1 0.37+0.03 –0.05 (Bottom View) (C0.15) 1.14±0.1 0.5±0.06 A A 0.15+0.07 –0.05 0.08 MIN. 1.1±0.1 0.2±0.1 Remark A>0 ( ): Reference value R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 7 of 9 μPG2411T7C RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 8 of 9 μPG2411T7C Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 9 of 9 μPG2411T7C Data Sheet Revision History Rev. 1.00 Date Jun 17, 2010 Description Summary Page − First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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