RENESAS UPG2214TB

Preliminary Data Sheet
μPG2214TB
GaAs Integrated Circuit for L, S-Band SPDT Switch
R09DS0050EJ0400
Rev.4.00
Sep 10, 2012
DESCRIPTION
The μPG2214TB is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for
mobile phone and another L, S-band application.
This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
0.05 to 3.0 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting.
FEATURES
• Switch control voltage
•
•
•
•
: Vcont (H) = 1.8 to 5.3 V (3.0 V TYP.)
: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
Low insertion loss
: Lins1 = 0.25 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins2 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins3 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins4 = 0.35 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins5 = 0.35 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
High isolation
: ISL1 = 32 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL2 = 28 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL3 = 27 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL4 = 26 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL5 = 24 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
Handling power
: Pin (1 dB) = +27.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Pin (1 dB) = +20.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 1.8 V, Vcont (L) = 0 V
High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
TM
• W-LAN, WLL and Bluetooth etc.
<R>
ORDERING INFORMATION
Part Number
μPG2214TB-E4
Package
Marking
6-pin super minimold (2012)
(Pb-Free)
G4J
Supplying Form
• Embossed tape 8 mm wide
• Pin 4, 5, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: μPG2214TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 1 of 12
μPG2214TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
(Top View)
1
G4J
2
(Bottom View)
6 1
6 6
1
5 2
5 5
2
4 3
3
4 4
3
Pin No.
Pin Name
1
OUTPUT1
2
GND
3
OUTPUT2
4
Vcont2
5
INPUT
6
Vcont1
TRUTH TABLE
Vcont1
Vcont2
INPUT−OUTPUT1
INPUT−OUTPUT2
Low
High
ON
OFF
High
Low
OFF
ON
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Switch Control Voltage
Symbol
Ratings
Vcont
+6.0
Unit
Note
V
Input Power
Pin
+30
dBm
Operating Ambient Temperature
TA
−45 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Note ⎪Vcont1 − Vcont2⎪ ≤ 6.0 V
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Switch Control Voltage (H)
Vcont (H)
1.8
3.0
5.3
V
Switch Control Voltage (L)
Vcont (L)
−0.2
0
0.2
V
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 2 of 12
μPG2214TB
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
Note 1
MIN.
TYP.
MAX.
Unit
−
0.25
0.45
dB
Insertion Loss 1
Lins1
f = 0.05 to 0.5 GHz
Insertion Loss 2
Lins2
f = 0.5 to 1.0 GHz
−
0.25
0.45
dB
Insertion Loss 3
Lins3
f = 1.0 to 2.0 GHz
−
0.30
0.50
dB
Insertion Loss 4
Lins4
f = 2.0 to 2.5 GHz
−
0.35
0.55
dB
Insertion Loss 5
Lins5
f = 2.5 to 3.0 GHz
−
0.35
0.60
dB
29
32
−
dB
Note 1
Isolation 1
ISL1
f = 0.05 to 0.5 GHz
Isolation 2
ISL2
f = 0.5 to 1.0 GHz
25
28
−
dB
Isolation 3
ISL3
f = 1.0 to 2.0 GHz
24
27
−
dB
Isolation 4
ISL4
f = 2.0 to 2.5 GHz
23
26
−
dB
Isolation 5
ISL5
f = 2.5 to 3.0 GHz
21
24
−
dB
15
20
−
dB
15
20
−
dB
15
20
−
dB
15
20
−
dB
+21.0
+23.0
−
dBm
f = 0.5 to 3.0 GHz
−
+23.0
−
dBm
f = 0.5 to 3.0 GHz
−
+27.0
−
dBm
f = 2.0 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 2.5 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 2.0 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 2.5 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 0.5 to 3.0 GHz, 2 tone,
−
+58
−
dBm
−
4
20
μA
−
20
200
ns
Input Return Loss 1
RLin1
f = 0.05 to 0.5 GHz
Input Return Loss 2
RLin2
f = 0.5 to 3.0 GHz
Output Return Loss 1
RLout1
f = 0.05 to 0.5 GHz
Output Return Loss 2
RLout2
f = 0.5 to 3.0 GHz
0.1 dB Loss Compression
Input Power
1 dB Loss Compression
Input Power
Pin (0.1 dB)
Note 2
Pin (1 dB)
Note 1
Note 1
f = 2.0/2.5 GHz
Note 3
2nd Harmonics
3rd Harmonics
Intermodulation Intercept Point
2f0
3f0
IIP3
Pin = +16 dBm, 5 MHz spicing
Switch Control Current
Icont
Switch Control Speed
tSW
50% CTL to 90/10% RF
Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz
2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 3 of 12
μPG2214TB
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
Note 1
MIN.
TYP.
MAX.
Unit
−
0.25
0.50
dB
Insertion Loss 6
Lins6
f = 0.05 to 0.5 GHz
Insertion Loss 7
Lins7
f = 0.5 to 1.0 GHz
−
0.25
0.50
dB
Insertion Loss 8
Lins8
f = 1.0 to 2.0 GHz
−
0.30
0.55
dB
Insertion Loss 9
Lins9
f = 2.0 to 2.5 GHz
−
0.35
0.60
dB
Insertion Loss 10
Lins10
f = 2.5 to 3.0 GHz
−
0.35
0.65
dB
27
30
−
dB
Note 1
Isolation 6
ISL6
f = 0.05 to 0.5 GHz
Isolation 7
ISL7
f = 0.5 to 2.0 GHz
23
27
−
dB
Isolation 8
ISL8
f = 2.0 to 2.5 GHz
21
25
−
dB
Isolation 9
ISL9
f = 2.5 to 3.0 GHz
Input Return Loss 3
Output Return Loss 3
0.1 dB Loss Compression
Input Power
RLout3
Pin (0.1 dB)
Note 2
1 dB Loss Compression
Input Power
RLin3
Pin (1 dB)
20
24
−
dB
f = 0.05 to 3.0 GHz
Note 1
15
20
−
dB
f = 0.05 to 3.0 GHz
Note 1
15
20
−
dB
+14.0
+17.0
−
dBm
f = 0.5 to 3.0 GHz
−
+17.0
−
dBm
f = 0.5 to 3.0 GHz
−
+20.0
−
dBm
−
4
20
μA
−
20
200
ns
f = 2.0/2.5 GHz
Note 3
Switch Control Current
Icont
Switch Control Speed
tSW
50% CTL to 90/10% RF
Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz
2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors.
The value of DC cut capacitors should be chosen to accommodate the frequency of operation,
bandwidth, switching speed and the condition with actual board of your system. The range of
recommended DC cut capacitor value is less than 100 pF.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 4 of 12
μPG2214TB
EVALUATION CIRCUIT
OUTPUT1
OUTPUT2
C0 Note
C0
3
4
2
5
1
6
C0
1 000 pF
1 000 pF
Vcont2
INPUT
Vcont1
Note C0 : 0.05 to 0.5 GHz 1 000 pF
: 0.5 to 3.0 GHz 100 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 5 of 12
μPG2214TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Vcont2
6pin SMM SPDT SW
Vc2
OUTPUT2
4
OUT 2
C2
C
2
C
C1
INPUT
G4J
<R>
C3
C1
C1
IN
C
1
C
5
C2
OUT 1
OUTPUT1
Vc1
Vcont1
USING THE NEC EVALUATION BOARD
Symbol
C1, C2, C3
C4, C5
Values
100 pF
1 000 pF
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 6 of 12
μPG2214TB
TYPICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
INPUT-OUTPUT1
INSERTION LOSS vs. FREQUENCY
1: –0.533 dB
1.0 GHz
2: –0.674 dB
1.5 GHz
3: –0.830 dB
2.0 GHz
4: –0.939 dB
2.5 GHz
5: –1.142 dB
3.0 GHz
Insertion Loss Lins (dB)
4
3
2
1
0
1
–1
2
–2
3
4
5
–3
–4
–5
0.5
5
1: –0.533 dB
1.0 GHz
2: –0.688 dB
1.5 GHz
3: –0.860 dB
2.0 GHz
4: –0.949 dB
2.5 GHz
5: –1.152 dB
3.0 GHz
4
Insertion Loss Lins (dB)
5
INPUT-OUTPUT2
INSERTION LOSS vs. FREQUENCY
3
2
1
0
1
–1
2
3
4
5
1.5
2.0
2.5
3.0
–2
–3
–4
1.0
1.5
2.0
2.5
3.0
3.5
Frequency f (GHz)
–5
0.5
1.0
3.5
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Caution These characteristics values include the losses of the NEC evaluation board.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 7 of 12
μPG2214TB
INPUT-OUTPUT1
ISOLATION vs. FREQUENCY
50
30
20
10
0
30
–10
–20
1
2
3
4
5
10
0
–10
–20
–30
–40
–40
1.0
1.5
2.0
2.5
3.0
–50
0.5
3.5
1
2
3
4
5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency f (GHz)
Frequency f (GHz)
INPUT-OUTPUT1
INPUT RETURN LOSS vs. FREQUENCY
INPUT-OUTPUT2
INPUT RETURN LOSS vs. FREQUENCY
50
1: –28.279 dB
1.0 GHz
2: –22.334 dB
1.5 GHz
3: –19.341 dB
2.0 GHz
4: –19.843 dB
2.5 GHz
5: –24.355 dB
3.0 GHz
40
30
20
10
0
–10
–20
1
2
–30
3
4
5
50
–50
0.5
1: –29.277 dB
1.0 GHz
2: –22.261 dB
1.5 GHz
3: –19.021 dB
2.0 GHz
4: –19.468 dB
2.5 GHz
5: –24.914 dB
3.0 GHz
40
30
20
10
0
–10
–20
1
2
–30
3
4
5
–40
–40
1.0
1.5
2.0
2.5
3.0
–50
0.5
3.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency f (GHz)
Frequency f (GHz)
INPUT-OUTPUT1
OUTPUT RETURN LOSS vs. FREQUENCY
INPUT-OUTPUT2
OUTPUT RETURN LOSS vs. FREQUENCY
1: –30.808 dB
1.0 GHz
2: –22.826 dB
1.5 GHz
3: –19.596 dB
2.0 GHz
4: –19.41 dB
2.5 GHz
5: –22.554 dB
3.0 GHz
40
30
20
10
0
–10
–20
1
–30
2
3
4
5
–40
–50
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency f (GHz)
50
Output Return Loss RLout (dB)
50
Output Return Loss RLout (dB)
20
–30
–50
0.5
1: –29.12 dB
1.0 GHz
2: –27.81 dB
1.5 GHz
3: –27.54 dB
2.0 GHz
4: –26.56 dB
2.5 GHz
5: –24.88 dB
3.0 GHz
40
Input Return Loss RLin (dB)
Isolation ISL (dB)
50
1: –28.87 dB
1.0 GHz
2: –27.81 dB
1.5 GHz
3: –27.54 dB
2.0 GHz
4: –26.74 dB
2.5 GHz
5: –25.04 dB
3.0 GHz
40
Input Return Loss RLin (dB)
INPUT-OUTPUT2
ISOLATION vs. FREQUENCY
Isolation ISL (dB)
<R>
1: –29.853 dB
1.0 GHz
2: –22.191 dB
1.5 GHz
3: –18.863 dB
2.0 GHz
4: –18.563 dB
2.5 GHz
5: –23.874 dB
3.0 GHz
40
30
20
10
0
–10
–20
1
2
–30
3
4
2.0
2.5
5
–40
–50
0.5
1.0
1.5
3.0
3.5
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 8 of 12
μPG2214TB
OUTPUT POWER vs. INPUT POWER
30
Output Power Pout (dBm)
f = 2 GHz
25
20
15
10
5
10 12
14
16
18 20
22 24
26 28
30
Input Power Pin (dBm)
Remark The graph indicate nominal characteristics.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 9 of 12
μPG2214TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
0.15+0.1
–0.05
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
Page 10 of 12
μPG2214TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods
and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
VPS
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
: 215°C or below
Time at temperature of 200°C or higher
: 25 to 40 seconds
Preheating time at 120 to 150°C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
VP215
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 11 of 12
μPG2214TB
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0050EJ0400 Rev.4.00
Sep 10, 2012
Page 12 of 12
μPG2214TB Data Sheet
Revision History
Rev.
Date
Description
Summary
Page
1.00
Mar 10, 2004
–
2.00
Apr 12, 2004
pp.3,4
3.00
Oct 20, 2004
p.1
Modification of ORDERING INFORMATION
pp.7 to 9
Addition of TYPICAL CHARACTERISTICS
p.1
Modification of ORDERING INFORMATION
p.6
Modification of ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON
EVALUATION BOARD
p.8
Modification of TYPICAL CHARACTERISTICS
4.00
Sep 10, 2012
First edition issued
Modification of ELECTRICAL CHARACTERISTICS
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C-1
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(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
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