RELIABILITY REPORT 59 1H 2015 Copyright © 2015 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and service marks of Altera Corporation in the U.S. and other countries. All other product or service names are the property of their respective holders. Altera products are protected under numerous U.S. and foreign patents and pending applications, maskwork rights, and copyrights. Altera warrants performance of its semiconductor products to current specifications in accordance with Altera's standard warranty, but reserves the right to make changes to any products and services at any time without notice. Altera assumes no responsibility or liability arising out of the application or use of any information, product, or service described herein except as expressly agreed to in writing by Altera Corporation. Altera customers are advised to obtain the latest version of device specifications before relying on any published information and before placing orders for products or services. 2 Contents Overview .............................................................................................................................4 Altera Quality Commitment .............................................................................................4 Altera Quality System........................................................................................................5 Figure 1: Typical Product Flow Chart ...................................................................................................... 6 Reliability Methodology ....................................................................................................7 Table I: Product Family Description ......................................................................................................... 7 Table II: Reliability Qualification Requirements....................................................................................... 9 Table III: Reliability Monitor Program.................................................................................................... 10 Lifetest: Methodology and Failure Rate Prediction .....................................................11 Lifetest Methodology............................................................................................................................... 11 Failure Rate Prediction ............................................................................................................................ 12 Table IV: Common Failure Mechanisms and Acceleration Factors ....................................................... 13 Lifetest Results .................................................................................................................14 Table V: Lifetest summary ..................................................................................................................... 14 FLEX 0.42 Products .............................................................................................................................. 15 FLEX 0.3/0.35 Products ........................................................................................................................ 16 FLEX, ACEX, and APEX 0.22 Products .............................................................................................. 17 APEX, Excalibur, and Mercury 0.18 Products ...................................................................................... 18 APEX and Mercury 0.15 Products ........................................................................................................ 19 Stratix, Stratix GX, Cyclone and HardCopy 0.13 Products................................................................... 20 Stratix II, Stratix II GX, Cyclone II, Arria GX and HardCopy II – 90 nm Products ............................... 21 Stratix III, Cyclone III and Cyclone IV – 65/60 nm Products ................................................................. 22 Stratix IV, Arria II GX & GZ and HardCopy III & IV – 40 nm Products ............................................... 23 Arria V and Cyclone V – 28nm Low Power Products ............................................................................ 24 Stratix V – 28nm High Performance Products ........................................................................................ 24 MAX 7000S and MAX 9000 – Third Generation ................................................................................... 26 MAX 7000A and MAX 3000A – Fourth Generation .............................................................................. 27 MAX 7000B – Fifth Generation .............................................................................................................. 28 MAX II, MAX V – 0.18 μm FLASH Products ....................................................................................... 29 Configuration Devices – EPROM ........................................................................................................... 29 Configuration Devices – Flash Memory .................................................................................................. 31 PowerSoC 5300 and 6300 Family ........................................................................................................... 32 PowerSoC EN2300 Family and EC2360 ................................................................................................. 33 PowerSoC EV1300 Family ...................................................................................................................... 34 High Temperature Storage .............................................................................................35 Reflow Simulation and Moisture Preconditioning .......................................................38 Accelerated Moisture Resistance ....................................................................................38 Autoclave ................................................................................................................................................. 38 Unbiased HAST ....................................................................................................................................... 38 Temperature Humidity Bias ...........................................................................................44 Highly Accelerated Stress Testing ........................................................................................................... 46 Temperature Cycling .......................................................................................................49 PowerSoC Device Package Stress ...................................................................................53 Temperature Humidity Test ...........................................................................................55 Solder Joint Reliability ....................................................................................................57 Configuration Devices .....................................................................................................61 Description .............................................................................................................................................. 61 Reliability Results.................................................................................................................................... 62 3 Overview Altera® Corporation is the pioneer of programmable logic solutions, enabling system and semiconductor companies to rapidly and cost effectively innovate, differentiate, and win in their markets. Altera offers FPGAs, SoCs with embedded processor systems, and CPLDs in combination with software tools, intellectual property, embedded processors and customer support to provide highvalue programmable solutions. This report shows reliability results on each product family from Altera's product catalog. All results successfully meet Altera quality and reliability standards. Altera ensures that standards are constantly met through continuous monitoring. Altera Quality Commitment DRIVE Quality in everything we do to ensure the Customer’s total quality experience! D Deliver defect-free products and services on time R Requirements are met at all times for internal and external customers I Improve continuously V Verify effectiveness E Every Altera employee is responsible! Altera’s corporate mission is to be the preferred fabless supplier of FPGAs, SoCs with embedded processor systems, CPLDs, ASICs and PowerSoCs in combination with software tools, intellectual property, embedded processors and customer support, in order to provide high-value programmable solutions. Altera will use this advantage to gain market share penetration into the larger Logic IC market. To achieve and maintain this preferred supplier status, we must provide cost–effective, state–of–the–art solutions to our customers, in a timely manner, while consistently meeting their quality, reliability, and service requirements. We ensure that all products and services receive optimum attention to detail, from conception to delivery. We are committed to sustaining a corporate culture that strives for risk management, defect-free performance, verification of effectiveness and continuous improvement, and which extends to all our activities as well as to our supply chain partners. Achieving Quality is the responsibility of all Altera employees, managers, directors, and officers. To achieve our corporate goals, we must: produce quality work conform to all applicable procedures and specifications monitor the performance of our business processes against current quality goals derive and implement quality improvements from this performance analysis 4 Altera Quality System Altera has a closed-loop quality and reliability system that conforms to the requirements of ISO 9001:2008, MIL-I-45208 and JEDEC® standards. Altera and all of its major suppliers are ISO 9000 certified. Altera’s Reliability qualification and monitoring programs are also governed by internal specifications, which define procedures, pass/fail requirements, and corrective actions. Altera has been ISO9001 certified since October, 1994. Altera is able to provide the automotive supply chain with the highest levels of quality and reliability because all of Altera’s foundry, assembly and test partners are certified and registered to the ISO/TS 16949 automotive industry quality standard. Altera conducts automotive product qualification which complies with requirements listed in the AECQ100 document. Altera performs comprehensive testing and manufacturing controls on all its products. Figure 1 shows a typical product manufacturing flow. 5 Figure 1: Typical Product Flow Chart Final Test Wafer Fabrication AC and DC Parametrics, Functionality, Programmability or SRAM Configuration All Critical Process Steps under SPC Control QA Electrical Wafer Inspection Visual and E-test, Sample 100% of all lots Mark As Required Wafer Sort 1 DC Parametrics, Functionality Programmability, NonVolatile Margin or SRAM Configuration Visual Inspection Including machine inspection of all packages > 44 leads. Data Retention Bake 245°C, 48 hours for all EPROM, EEPROM, and FLASH products QA Inspection Wafer Sort 2 Margin Test EPROM, EEPROM, and FLASH (except MAX II & V) products Inner Box and Transfer to Finished Goods Bake and Bag per Specification Assembly nd rd th 2 , 3 , and 4 Optical Sample Inspections, Inline Mark Plant Clearance, Outer Box, and Ship 6 Reliability Methodology Reliability qualifications and monitoring are performed specifically for each product family. All members of a product family utilize the same circuit architecture, fabrication process, and share the same package types. See the list and description of Altera Product Families in Table I. Table I: Product Family Description PRODUCT FAMILY ® ® ® Stratix V, Arria V, Cyclone V ® Stratix IV, Arria II GX, HardCopy III, HardCopy IV Stratix III, Cyclone III, Cyclone IV Stratix II, Stratix II GX, Cyclone II, Arria GX, HardCopy II Stratix, Stratix GX, Cyclone, HardCopy APEX™ 20KC, APEX II, Mercury APEX 20KE, Mercury™, Excalibur™ ® FLEX 10KE, FLEX 10KS, ACEX, APEX 20K FLEX 10KA, FLEX 6000A FLEX 8000, FLEX 10K, FLEX 6000 ® MAX II, MAX V MAX 7000B MAX 7000A, MAX 3000A MAX 7000, MAX 9000 EPC1 EPCQ16, EPCQ32, EPCQ64, EPCQ128, EPCQ256, EPCQ512, EPCS128, EPCQ-L256, EPCQ-L512, EPCQ-L1024 EPCS4, EPCS16, EPCS64 EPCS1 EPC4, EPC8, EPC16 * EPC2 EP5300, EN5300, EN6300 (5V and 6V devices) EN2300**, EC2630*** (12 V devices) EV1320, EV1340, EV1380 (1.8V device) TECHNOLOGY WAFER PROCESS FPGA FPGA FPGA FPGA FPGA FPGA FPGA FPGA FPGA FPGA CPLD/FLASH CPLD/EEPROM CPLD/EEPROM CPLD/EEPROM EPROM 0.028um 0.040um 0.065/0.060um 0.090um 0.13um 0.15um 0.18um 0.22um 0.3/0.35um 0.42um 0.18um 0.22um 0.3/0.35um 0.5um 0.5um FLASH 0.065um FLASH FLASH FLASH FLASH PowerSoC PowerSoC PowerSoC 0.11um 0.15um 0.35/0.13um 0.40um 0.25um 0.18/0.25um/0.35um 0.18/0.25um * Package contains 2 dice with different processes 0.35um and 0.13um ** Package contains 2 dice with different processes 0.18 and 0.25um *** Product built on 0.35um wafer technology. A product family will contain several products, all based upon the same logic elements, embedded storage elements, and programmable interconnect technology. For reliability purposes such as data reporting and failure rate prediction, a product family will be reported as much as possible on a fabrication process technology. 7 Product families are qualified based upon the requirements specified in Table II. Product family qualification will include products with a range of densities, package types, and package lead counts. If a new product is added to the product family with a significant increase (more than 50%) in logic elements, a product qualification will be performed. Reliability monitors are performed on a regular basis in order to assure that Altera’s normal production testing and process control methodologies produce reliable products. The reliability monitor program is also based upon a product family methodology. Altera has a product reliability goal for long term failure rate. The long term failure rate is listed as <200 FIT at 55°C use condition. Inherent in this requirement are two key components Product needs to meet lifetime goal of 100,000h of useful life The wear-out mechanisms are outside of the useful life of the product. Different products and package types are procured from normal production on a Last in First out (LIFO) schedule to monitor product reliability. Results in this report cover data gathered at least in the last 36 months. For life-test, the report covers a much larger period to assess FIT numbers more accurately. Reliability monitor sampling is defined in Table III. Reliability monitor schedules depend on the maturity of the product: A) Minimum of 1 lot per quarter for new product in production for less than 5 years B) Minimum of 1 lot per year for mature products in production for more than 5 years. All new results shown in this reliability report compared to previous version appear upfront in each table of results and are highlighted in a different color and font. 8 Table II: Reliability Qualification Requirements TYPE OF TEST MIL-STD-883 or JEDEC Std. Life Test JESD22-A108 High Temperature Retention Bake JESD22-A103 Temperature Cycling JESD22-A104 Biased Humidity/Temp JESD-A101 Or H.A.S.T JESD-A110 Autoclave JESD22-A102 Or Unbiased H.A.S.T JESD-A118 ESD HBM JESD22-A114 Mil Std 3015.7 ESD Charged Device Model JESD22-C101 Latch-up JESD 78 Program/Erase Cycling PCB Interconnect Reliability IPC 9701 JESD22-A104 METHOD /CONDITION 1000 hours @ 1.1 - 1.2 x Vcc, Tj:110°C min, 140°C max 2000 hours for reference 1000 hours min. @ 150°C, 168 hours min @ 245°C for wafer level may be substituted. Preconditioning + 700 cycles. -55°C to +125°C (condition B) Preconditioning + 85°C, 85% R.H.; 1000 hours @ Vcc nom; Or 130°C, 85% RH, 48 or 96 hours, @ Vcc nom. 121°C, 15 PSIG; 96 hours, 168 hours for reference Or 130°C, 85% RH, 96 hours 100 pf, & 1500 Ω. Record Distribution of all Failing Pins Field Induced Charge Device (Icc nom. + 100mA) or Icc nom. + 50% on I/O, Vcc + 50% on Power Supplies Program/Erase 100 cycles (EEPROM or FLASH) 0°C to +100°C, Single Chamber SAMPLE SIZE PIN COUNTS # of Lots Full Qualification Accept Criteria # Rej./Lot 77 45 25 <100 pins 101-240 pins >240 pins 45 25 <100 pins 45 >100 pins 25 3 1 0 45 25 <100 pins 45 >100 pins 25 3 1 0 45 25 <100 pins 45 >100 pins 25 3 1 0 45 25 <100 pins 45 >100 pins 25 3 1 0 1 1000V 1 500 V for GIO; 200 V for highspeed pins < 10 Gbps; Characterize for highspeed pins 10 Gbps 1 0 1 0 1 Daisy Chain >2000 Cycles to 0.1% Predicted Failure 3 3 6 25 25 3 1 1 0 < 200 FIT@55°C 9 Table III: Reliability Monitor Program TYPE OF TEST MIL-STD-883 or JEDEC Std. Life Test JESD22-A108 High Temperature Retention Bake Non-Volatile Products JESD22-A103 Temperature Cycling JESD22-A104 Biased Humidity/Temp. JESD-A101 Or H.A.S.T. JESD-A110 Autoclave JESD22-A102 Or Unbiased H.A.S.T. JESD-A118 Program/Erase METHOD/CONDITION 1000 hours @ 1.1 - 1.2 x Vcc nom. Tj :110°C min, 140°C max 2000 hours for reference SAMPLE SIZE <100 pins 77pcs >100 -240 pins 45pcs >240 pins 22pcs 1000 hours min. @ 150°C <100 pins 45pcs >100 pins 22pcs Preconditioning + 700 cycles. -55°C to +125°C Industrial, 0°C to +125°C Commercial, <100 pins 45pcs >100 pins 22pcs Preconditioning + 85°C, 85% R.H. 1000 hours min. @ Vcc nominal; Or 130°C, 85% RH, 96 hours, @ Vcc nominal <100 pins 45pcs >100 pins 22pcs 121°C, 15 PSIG; 96 hours min. 168 hours for reference Or 130°C, 85% RH, 96 hours Program/Erase 100 cycles (EEPROM or FLASH only) <100 pins 45pcs >100 pins 22pcs 22pcs 10 Lifetest: Methodology and Failure Rate Prediction Lifetest Methodology Altera performs a high temperature / high voltage lifetest on its products to accelerate failure mechanisms. These mechanisms include wear-out degradation. Lifetest is conducted at a Junction Temperature of at least 125°C and at a Vcc power supply increased by 10-20%. In some cases where increasing junction temperature to 125°C is not possible because of risk of thermal runaway, a minimum junction temperature of 110°C is used. The lifetest boards have special high temperature sockets that maintain lead integrity. FLEX, APEX, Mercury, Stratix, Stratix GX, Cyclone, Stratix II, Stratix II GX, Cyclone II and Power devices use static life test mode. 65/60 nm, 40nm and 28 nm products use dynamic life with a real clocked configuration. MAX 3000, MAX 7000, MAX 9000 devices (EEPROM devices), MAX II and MAX V (FLASH devices) are first subjected to 100 Program Erase Cycles before starting Lifetest. Each device is tested using production test equipment to data sheet specifications before being stressed. All readouts are also done on the same production test equipment to data sheet parameters. A device is considered a failure if it does not pass data sheet specifications. For non-volatile configuration elements, except those on MAX II and V devices, there is a test mode that allows the configuration elements to be margin tested to determine the amount of charge on the floating gate. At each read-out, the margin of every configuration element is tested and the lowest margin is recorded. 11 Failure Rate Prediction Altera uses exponential distribution of failures in time and predicts constant failure rate at operating conditions. Extrapolation uses thermal and voltage acceleration factor based on JEDEC formulas (JEP122). The formulas are presented below, and the acceleration factors are listed in Table IV. Junction temperatures, not ambient temperatures, must be used in calculating thermal acceleration factors. A designer can determine device power dissipation using the Early Power Estimator (EPE) available on www.altera.com, or using the PowerPlay power analyzer in the Quartus II design tool. Junction temperatures are calculated from ambient temperature or case temperature measurements using the thermal resistance values found in the Altera Device Package Information Data Sheet. Thermal resistance values are specific to each product and package combination. For convenience, formulas to calculate junction temperatures are included with the acceleration formulas below. At Altera, each expected failure mechanism is assessed separately as this provides a more accurate projection of device failure rate. For each mechanism, we calculate the acceleration using the appropriate model employing the appropriate constants (see table IV). Theoretically, we determine the exponential distribution of time to failure for each mechanism and then we add up the individual failure rates to obtain the device overall failure rate. So, we determine the cumulative distribution function for each mechanism, Fi (t) and then we can multiply them together Fi (t) for i=1…n. Since we assume the distribution of time to failure for each mechanism is exponential, we can simply add the individual failure rates i, which represents the geometric mean. Other semiconductor suppliers simply take an average activation energy (usually Ea=0.7) and apply an Arrhenius model to the HTOL results disregarding the individual failure mechanisms. Note also that temperatures must be converted to Degrees Kelvin when using the Temperature Acceleration formula below. Degrees Kelvin = Degrees Centigrade + 273. Temperature Acceleration Factor = exp[Ea/((k)(Toperation)) - Ea/((k)(Tstress))] k = Boltzmann’s constant = 8.62 x 10-5 eV/°K Ea = Activation energy in eV (see Table III) T = Junction Temperature in Degrees Kelvin kT(eV) = 0.0258 x (temperature in Centigrade + 273)/298 Gate Oxide Voltage Acceleration Factor = exp[(γ/(tox/10 nm))(Vstress - Voperation)] γ = Voltage exponent factor (see Table IV) Interlayer Dielectric Acceleration Factor = exp[(γ)(Vstress - Voperation)] Junction Temperature = (Ambient Temperature)+(Power dissipation)*(ja) = (Case Temperature)+(Power dissipation)*(jc) ja and jc are found in the Altera Device Package Information Data Sheet. 12 Table IV: Common Failure Mechanisms and Acceleration Factors i Activation Energy “Ea” [eV] Voltage Exponent Factor Gate Oxide Breakdown (≥ 90 nm)* Interlayer defect** Via Voiding (0. 15 μm & 0. 13 μm) Via Voiding (≤ 90 nm) Silicon Junction Defect Masking (Poly, Diffusion, etc.) Defect Metallization Defect Al Electromigration Cu Electromigration (0. 13 μm, FSG dielectric) 0.7 0.7 0.8 1.0 0.8 0.5 0.5 0.7 (Al-Si), 0.85 (Al-Cu) γ = 3.2 γ = 2.0 0.0 0.0 0.0 0.0 0.0 Current density dependence (1/J2 ) 0.8 Current density dependence (1/J2 ) Cu Electromigration (≤ 90 nm low-k dielectric) 0.9 Current density dependence (1/J ) 1.0 0.0 0.6 0.0 1.1 0.0 0 2.3 Mechanism Contamination (Surface & Bulk) Data Retention Charge Loss (EPROM) Charge Detrapping (FLASH &EEPROM, ≤ 168 hrs) SILC (FLASH & EEPROM, > 168 hrs) *≤ 65 nm process uses different values with power-law model ** ≤ 28nm process uses different values Failure rates are calculated on a product family basis (as in the tables of data on the following pages). Device hours accumulated at the stress conditions are converted to normal use conditions using the acceleration factors described above. Equivalent hours are calculated at a typical use condition of Vcc nominal in a 55°C still-air ambient or 70°C junction. Failure rates are expressed in terms of FIT or Failures In Time, where one FIT is equivalent to one failure in one billion or 109 device-hours. Altera calculates the FIT rate using the JESD85 (Methods for Calculating Failure Rates in Units of FITs) standard. The failure rate is calculated using a Chi-squared distribution to predict a 60% confidence level from the small number of failures and limited sample size of the population tested. The Chi-squared value is calculated from the inverse Chi-squared distribution using the desired probability level and the degrees of freedom. ii The degrees of freedom are calculated as: = 2n+2, where n= # of failures observed. The failure rate is then calculated from the Chi-squared value: Failure Rate 2 failures hour 2 A. F. Device hours Device hours = (Hours in lifetest) x (Number of devices) Acceleration Factor = (Thermal Acceleration) x (Voltage Acceleration) The FIT rate is 109*Failure Rate and the Mean Time to Failure is simply the inverse of the failure rate for an exponential distribution. 13 Lifetest Results Lifetest results are summarized in table V. More details are presented on following pages. Table V: Lifetest summary (For details of new stress results, click on product family name highlighted in blue). PRODUCT FAMILY TECHNOLOGY NODE DEVICE HOURS @ STRESS CONDITIONS NUMBER OF FAILS FIT (60%C.L.) Stratix V 0.028m 769,714 0 40.2 (1) Arria V, Cyclone V 0.028m 1,551,258 0 18.5 (1) Stratix IV, Arria II GX, HardCopy III, HardCopy IV 0.040m 1,327,311 2 38.8 (1) Stratix III, Cyclone III, Cyclone IV Stratix II, Stratix II GX, Cyclone II, Arria GX, HardCopy II Stratix, Stratix GX, Cyclone, HardCopy 0.065/0.060m 2,062,828 0 10.5 1) 0.090m 1,193,728 0 18.0 (1) 0.13m 1,574,590 0 5.1 (1) APEX 20KC, APEX II, Mercury 0.15m 150,000 0 3.3 (1) APEX 20KE, Mercury, Excalibur 0.18m 285,575 0 48.4 (2) FLEX 10KE, FLEX 10KS, ACEX, APEX 20K 0.22m 605,000 0 4.6 (2) FLEX 10KA, FLEX 6000A 0.3/0.35m 355,000 0 45.7 (2) FLEX 8000, FLEX 10K, FLEX 6000 0.42m 395,660 0 19.5 (2) MAX II, MAX V 0.18m 2,384,000 0 10.1 (1) MAX 7000B 0.22m 150,000 0 31.2 (1) MAX 7000A, MAX 3000A 0.3/0.35m 1,419,000 0 6.4 1) MAX 7000S, MAX 9000 0.5m 543,235 0 22.1 (1) EPC1 0.5m 693,000 0 28.0 (2) EPC2 and EPC4, EPC8, EPC16 0.4um and (0.35/0.13um) 1,031,000 0 4.3 (2) EPCS1 0.15m 350,000 0 1 (2) EPCS4, EPCS16, EPCS64 EPCS128, EPCQ16, EPCQ32, EPCQ64. EPCQ128, EPCQ256, EPCQ512 EPCQ-L256, EPCQ-L512, EPCQ-L1024 0.11m 263,000 0 1 (2) 0.065m 343,000 0 4 (2) 0.065m 231,000 0 7.9 (2) *EP5300, EN5300, EN6300 (5Volts, 6Volts) 0.25um 17,581,000 0 0.3 (1) *EN2300, EC2630 (12Volts) 0.18/0.25/0.35um 752,500 0 1.0 (1) *EV1320, EV1340, EV1380 (1.8Volts) 0.18/0.25m 400,000 0 45.8 (1) (1) FITs calculated at 70°C junction operating temperature (2) FITs calculated at 55°C ambient operating temperature * Previous reliability reports from Enpirion provided FIT combining all products: FIT=2.5 (May 2014) 14 FLEX 0.42 Products FLEX 8000, FLEX 10K and FLEX 6000 products are fabricated on a 0.42 feature size on the same process technology. Lifetests are conducted at 6.0V, which is a 20% overvoltage. FLEX 0.42 Lifetest Results 15 FLEX 0.3/0.35 Products FLEX 10KA and FLEX 6000A products are fabricated on a 0.3/0.35 process technology. Devices are available in TQFP, PQFP, RQFP, FBGA and BGA packages. The process technology operates with a 3.3V supply voltage and has I/Os that are 2.5V and 5.0V tolerant. Lifetests are conducted at 4.0V, which is a 20% overvoltage. FLEX 0.3/0.35 Lifetest Results 16 FLEX, ACEX, and APEX 0.22 Products FLEX 10KE, FLEX 10KS, ACEX, and APEX 20K products are fabricated on a 0.22 process technology. Devices are available in TQFP, PQFP, RQFP, FBGA and BGA packages. The process technology operates with a 2.5V supply. Lifetests are conducted at 3.0V, which is a 20% overvoltage. FLEX, ACEX, and APEX 0.22 Lifetest Results 17 APEX, Excalibur, and Mercury 0.18 Products APEX 20KE, Excalibur, and Mercury products are fabricated on a 0.18 process technology. Devices are available in TQFP, PQFP, RQFP, FBGA, BGA & PGA packages. The process technology operates with a 1.8V supply. Lifetests are conducted at 2.3V, which is over 25% overvoltage. APEX, Excalibur, and Mercury 0.18 Lifetest Results 18 APEX and Mercury 0.15 Products APEX 20KC, APEX II and Mercury products are fabricated on a 0.15µ process technology. Devices are available in FBGA, QFP, BGA, and Flip Chip FBGA packages. The APEX 20KC product family operates with a 1.8V supply and the lifetest is conducted at 2.3V, which is a 25% overvoltage. The APEX II product family operates at 1.5V and the lifetest is conducted at 1.8V, which is a 20% overvoltage. APEX and Mercury 0.15 Lifetest Results 19 Stratix, Stratix GX, Cyclone and HardCopy 0.13 Products Stratix, Stratix GX, Cyclone and HardCopy products are fabricated on a 0.13µ process technology. Devices are available in FBGA, QFP, BGA, and Flip Chip FBGA packages. The Stratix, Stratix GX, Cyclone and HardCopy product families operate with a 1.5V supply. The lifetest is conducted at 1.8V, which is a 20% overvoltage. A lifetest temperature of 100°C is used on some devices to keep junction temperature below absolute maximum ratings. Stratix, Stratix GX, Cyclone and HardCopy 0.13 Lifetest Results 20 Stratix II, Stratix II GX, Cyclone II, Arria GX and HardCopy II – 90 nm Products Stratix II, Stratix II GX, Cyclone II, Arria GX and HardCopy II products are fabricated on a 90 nm process technology. Stratix II and GX devices are available in Flip Chip FBGA packages. Cyclone II devices are available in QFP, FBGA and UBGA packages. The Stratix II, Stratix II GX, Cyclone II, Arria GX and HardCopy II product families operate with a 1.2V supply and the lifetest is conducted at 1.44V, which is a 20% overvoltage. Lifetest is run at junction temperature of 125°C to keep it below absolute maximum ratings. Stratix II, Stratix II GX, Cyclone II, Arria GX and HardCopy II – 90 nm Lifetest Results 21 Stratix III, Cyclone III and Cyclone IV – 65/60 nm Products Stratix III, Cyclone III and Cyclone IV products are fabricated on a 65/60 nm process technology. Stratix III devices are available in Flip Chip FBGA packages. Cyclone III and Cyclone IV devices are available in QFP, QFN, FBGA and UBGA packages. The Stratix III product families operate with a 1.1V supply. Lifetest is conducted at 1.32V, which is a 20% overvoltage. The Cyclone III and Cyclone IV product families operate with a 1.2V supply. Lifetest is conducted at 1.44V, which is a 20% overvoltage. Stratix III, Cyclone III and Cyclone IV – 65/60 nm Lifetest 22 Stratix IV, Arria II GX & GZ and HardCopy III & IV – 40 nm Products Stratix IV, Arria II GX and HardCopy III & IV products are fabricated on a 40 nm process technology Stratix IV and Arria II GX devices are available in Flip Chip FBGA packages. The Stratix IV, Arria II GX and HardCopy III & IV product families operate with a 0.9 V supply. Stratix IV lifetest is conducted at 1.1 x Vcc while Arria II and HardCopy III & IV lifetest is conducted at 1.2 x Vcc. Stratix IV, Arria II GX and HardCopy III & IV – 40 nm Lifetest 23 Arria V and Cyclone V – 28nm Low Power Products Arria V and Cyclone V products are fabricated on a TSMC 28 nm LP process technology. Arria V devices are available in Flip Chip FBGA packages. Cyclone V devices are available in Wirebonded FBGA packages. Arria V product families operate with a 0.85V, 1.10V or 1.15V core supply voltage and lifetest is conducted at 1.15 x Vcc. Cyclone V product families operate with a 1.10V supply and lifetest is conducted at 1.2 x Vcc. Arria V and Cyclone V – 28nm Low Power Lifetest 24 Stratix V – 28nm High Performance Products Stratix V products are fabricated on a TSMC 28 nm HP process technology. Stratix V devices are available in Flip Chip FBGA packages. Stratix V product families operate with a 0.85 V or 0.9V (depending on speed grade) supply voltage and lifetest is conducted at 1.1 and 1.2 x Vcc. Stratix V – 28nm High Performance Lifetest 25 MAX 7000S and MAX 9000 – Third Generation These MAX 7000 and MAX 9000 products are fabricated on a 0.5 CMOS EEPROM process. Devices are available in PLCC, TQFP, PQFP, RQFP, and PGA packages. Lifetests are conducted at 6.0V, which is a 20% overvoltage. Third Generation MAX 7000S & MAX 9000 Lifetest Results 26 MAX 7000A and MAX 3000A – Fourth Generation The MAX 7000A and MAX 3000A products are fabricated on a 0.3/0.35 CMOS EEPROM process. Devices are available in PLCC, TQFP, PQFP, BGA, and FBGA packages. Lifetest are conducted at 4.0V, which is a 20% overvoltage. Fourth Generation MAX 7000A and MAX 3000A Lifetest Results 27 MAX 7000B – Fifth Generation These MAX 7000B products are fabricated on a 0.22 CMOS EEPROM process. Devices are available in PLCC, TQFP, UBGA, PQFP & FBGA packages. Lifetests are conducted at 3.0V, which is a 20% overvoltage. Fifth Generation MAX 7000B Lifetest Results 28 MAX II, MAX V – 0.18 μm FLASH Products These MAX II & V products are fabricated on an 8", 0.18um CMOS flash memory process technology. Devices are available in TQFP and FBGA packages. The operating supply voltage is 3.3V for the MAX II device and lifetests are conducted at 3.96V. The operating supply voltage is 1.8V for the MAX II G, MAX II Z and MAX V devices and lifetest is conducted at 2.16V. Both are 20% overvoltage. MAX II & V Lifetest Results 29 Configuration Devices – EPROM These Configuration EPROMs are fabricated on a 0.5m CMOS EPROM process. These devices are erasable with UV light when supplied in windowed hermetic packages for prototyping. Lifetests are conducted at least 6.0V, which is a minimum of 20% overvoltage. Third Generation Classic and Configuration Devices Lifetest Results 30 Configuration Devices – Flash Memory The EPC2 configuration device is fabricated on a 0.4 CMOS Flash process. EPC4, EPC8 and EPC16 are stacked-die configuration devices in which the controller die is fabricated on a 0.35 double layer metal CMOS logic process and the memory die is fabricated on 0.13 triple layer metal CMOS Flash process. These devices are electrically erasable. For EPC2, life-tests are conducted at 6.0V. For EPC4, EPC8 and EPC16, life-tests are conducted at 4.0V. This represents 20% overvoltage. Flash Memory Devices Lifetest Results 31 PowerSoC 5300 and 6300 Family Products from this family are 5V and 6V DC-DC Buck (step-down) converters. These products are fabricated on a 0.25um CMOS process technology. Devices are available in QFN and DFN packages. The operating supply voltage is 5V for the 5300 devices and lifetest is conducted at 5.5V. The operating supply voltage is 6V for 6300 devices and lifetest is conducted at 6.6V. Both lifetest voltages represent a 10% overvoltage. 5300 and 6300 Family - Lifetest results 32 PowerSoC EN2300 Family and EC2360 Products from this family are 12V DC-DC Buck (step-down) and Bus Converters. EN2300 products are made of 2 dice inserted in QFN packages. One die is fabricated on a 0.18um CMOS technology; the other die is fabricated on a 0.25um CMOS technology. The operating supply voltage is 12V and lifetest is conducted at 13.2V, which is a 10% overvoltage. . EN2300 Family, EC2360 - Lifetest results 33 PowerSoC EV1300 Family Products from this family are 1.8V DC-DC Buck (step-down) Converter for Termination Power. EV1300 Products are fabricated on a 0.18um and 0.25um CMOS technology. Devices are available in QFN package. The operating supply voltage is 1.8V and lifetest is conducted at 2V, which is a 10% overvoltage. EV1300 Family Lifetest results 34 High Temperature Storage Reference: JESD22-A103 (JEDEC Standard) All lots are subjected to 150°C Bake after being preconditioned to JEDEC standard moisture sensitivity level (MSL) and subjected to a 3X reflow. High Temperature Storage Results REL LOT # DEVICE PACKAGE TYPE BAKE TEMP. # UNITS STRESS HOURS 14110024 15020012 14100037 15010016 14100023 14100026 14100027 15010015 5AGTD7 EP5SGXBB EPM7256B EPC16 EP1S40Z EP4SGX230 EP4SGX230 EP2C5 14020019 # FAIL 1152 FBGA 1517 FBGA 256 FBGA 88 UBGA 1020 FBGA 1517 FBGA 1517 FBGA 256 FBGA 150 150 150 150 150 150 150 150 25 25 25 45 25 25 25 30 1025 1050 2000 2000 2000 2000 2000 2000 0 0 0 0 0 0 0 0 EP5SGXA7 1517 FBGA 150 25 2029 14020037 EP2C8 144 TQFP 150 30 2000 14020051 EPM1270G 256 FBGA 150 30 14020057 EP3SL200 1152 FBGA 150 14030022 EPC2 20 PLCC 14030023 EPM7512AE 14030029 TECHNOLOGY DATE CODE 28nm SRAM 28nm SRAM 0.22µ EEPROM 0.35µ FLASH 0.13µ SRAM 40nm SRAM 40nm SRAM 0.09µ SRAM 1447 1502 1437 1443 1413 1437 1437 1437 0 28nm SRAM 1406 0 0.09µ SRAM 1401 2000 0 0.18µ FLASH 1401 30 2000 0 65nm SRAM 1401 150 45 2000 0 0.4µ FLASH 1407 208 PQFP 150 25 2000 0 0.35µ EEPROM 1401 EPM1270 144 TQFP 150 30 2000 0 0.18µ FLASH 1407 14030031 EP3C120 780 FBGA 150 30 2000 0 60nm SRAM 1407 14040010 EP4CGX150 896 FBGA 150 30 2000 0 60nm SRAM 1407 14040046 EPC16 88 UBGA 150 45 2000 0 0.35 µ FLASH 1407 14050018 5AGTD7 1152 FBGA 150 25 2023 0 28nm SRAM 1420 14050029 EP2C8 208 PQFP 150 30 2000 0 0.09µ SRAM 1413 14050030 EP5SGXA7 1517 FBGA 150 25 1072 0 28nm SRAM 1421 14070004 EP20K400 672 FBGA 150 25 2000 0 0.15µ SRAM 1419 14070005 EP3SL150 1152 FBGA 150 25 2000 0 65nm SRAM 1419 14070012 EPM570Z 144 FPBGA 150 30 2000 0 0.18µ FLASH 1425 14070047 EPM7064S 44 TQFP 150 45 2000 0 0.5µ EEPROM 1419 14070049 EP3C120 484 PFBGA 150 30 2000 0 60nm SRAM 1207 14080001 EPM570 256 FBGA 150 30 2000 0 0.18µ FLASH 1419 14080002 EPM2210 324 FBGA 150 30 2000 0 0.18µ FLASH 1337 14080004 5CGXC9 896 PFBGA 150 30 2000 0 28nm SRAM 1428 14080014 EP2AGX125 780 FBGA 150 25 2000 0 40nm SRAM 1433 14100005 EP2S130 1508 FBGA 150 30 1000 0 0.09µ SRAM 1437 14100021 EPM570Z 144 TQFP 150 30 1000 0 0.18µ FLASH 1437 13090029 5AGTD7 1152 FBGA 150 25 2098 0 28nm SRAM 1320 13100001 5AGTD7 1152 FBGA 150 25 2048 0 28nm SRAM 1339 13100007 5AGTD7 1152 FBGA 150 25 2002 0 28nm SRAM 1340 13100009 5SGXA7 1517 FBGA 150 25 2294 0 28nm SRAM 1336 13120007 4SGX230 1517 FBGA 150 30 2000 0 40nm SRAM 1349 13120013 4SGX230 1517 FBGA 150 30 2000 0 40nm SRAM 1349 13120041 4SGX230 1517 FBGA 150 30 2000 0 40nm SRAM 1349 13010054 EPC1S 20 PLCC 150 45 2000 0 0.5µ EPROM 1249 13010060 EP3SL200 1152 FBGA-FC 150 25 2000 0 65nm SRAM 1237 13010061 EP2C70 672 FBGA 150 30 2000 0 0.09µ SRAM 1243 13010065 5SX9E 1932 FBGA-FC 150 30 3000 0 28nm SRAM 1250 35 REL LOT # DEVICE PACKAGE TYPE BAKE TEMP. # UNITS STRESS HOURS # FAIL TECHNOLOGY DATE CODE 13020080 EPC2 20 PLCC 150 45 2000 0 0.4µ FLASH 1301 13020083 EPM7512A 208 PQFP 150 25 2000 0 0.35µ EEPROM 1301 13030015 5SX9E 1932 FBGA-FC 150 26 2000 0 28nm SRAM 1250 13030016 EP1S40Z 1020 FBGA-FC 150 25 2000 0 0.13µm SRAM 1307 13040002 EP4SGX530 1517 HBGA-FC 150 25 2000 0 40 nm SRAM 1231 13040006 EP2AGX260 1152 FBGA-FC 150 25 2000 0 40 nm SRAM 1307 13040011 EP3C120 780 FBGA 150 30 2000 0 60nm SRAM 1307 13040027 EPM2210 100 PQFP 150 30 2000 0 0.18µm FLASH 1315 13040028 EPM2210 100 PQFP 150 30 2000 0 0.18µm FLASH 1315 13040029 EPM2210 100 PQFP 150 30 2000 0 0.18µm FLASH 1315 13040041 EP2S90 1508 FBGA-FC 150 25 2000 0 0.09µ SRAM 1313 13040044 EPM1270 144 TQFP 150 30 1000 o 0.18µm FLASH 1307 13040057 EP2C70 896 FBGA 150 30 1000 0 0.09µ SRAM 1324 13050006 5SX9E 1517 SHBGA-FC 150 25 2100 0 28nm SRAM 1319 13050011 5AGTD7 1152 FBGA 150 25 2000 0 28nm SRAM 1320 13050018 EP20K400C 672-FBGA-FC 150 25 2000 0 0.15µ SRAM 1313 13060003 5CGXC7 484-UBGA 150 30 1000 0 28nm SRAM 1316 13060004 5CGXC7 484-UBGA 150 30 1000 0 28nm SRAM 1316 13060005 5CGXC7 484-UBGA 150 30 1000 0 28nm SRAM 1316 13060020 EP2S90 1020 FBGA-FC 150 25 2000 0 0.09µ SRAM 1319 13060021 EPM7064 44 TQFP 150 45 2000 0 0.5µ EEPROM 1319 13060022 EPM2210 256 FBGA 150 30 2000 0 0.18µm FLASH 1319 13060035 EP1C4 400 FBGA 150 30 2000 0 0.13µ SRAM 1324 13070005 EPC16 88UBGA 150 30 2000 0 0.35µm FLASH 1319 13070009 EP3C25 240 PQFP 150 30 2000 0 60nm SRAM 1325 13070022 EP3SL150 1152-FBGA 150 25 2000 0 65 nm SRAM 1325 13070024 EPM570 256 FBGA 150 30 2000 0 0.18µm FLASH 1319 12010010 5AGXB3 1152 FBGA 150 25 2273 0 28nm SRAM 1150 12030037 5AGXB3 1152 FBGA 150 25 2028 0 28nm SRAM 1210 12050014 5AGXB3 1152 FBGA 150 30 2039 0 28nm SRAM 1218 12070005 5AGTD3 1152 FBGA 150 25 2036 0 28nm SRAM 1228 12100023 5AGTD3 1152 FBGA 150 40 2005 0 28nm SRAM 1231 12070017 5AGTD7 1152 FBGA 150 25 2002 0 28nm SRAM 1229 12040021 5AGXD7 1152 FBGA 150 27 1000 0 28nm SRAM 1210 12040031 5CGXC7 896 FBGA 150 27 1000 0 28nm SRAM 1214 12060017 5CGXC7 896 FBGA 150 45 1000 0 28nm SRAM 1214 12060035 5CGXC7 896 FBGA 150 45 1000 0 28nm SRAM 1222 12080012 5CGXC7 896 FBGA 150 45 1000 0 28nm SRAM 1228 12060030 5CGXC7 896 FBGA 150 45 1000 0 28nm SRAM 1229 12100003 5CGXC9 1152 FBGA 150 30 1000 0 28nm SRAM 1225 12100027 5CGXC7 896 FBGA 150 45 1000 0 28nm SRAM 1206 12100030 5CGXC9 1152 FBGA 150 30 1000 0 28nm SRAM 1225 12110040 5CGXC9 1152 FBGA 150 45 1000 0 28nm SRAM 1225 12110042 5CGXC7 896 FBGA 150 30 1000 0 28nm SRAM 1206 12010017 5M2210Z 256 FBGA 150 77 2000 0 0.18µ FLASH 1201 12100034 5SGSD5 1517 FBGA 150 26 2360 0 28 nm SRAM 1223 12110013 5SGXA9 1932 FBGA 150 30 2006 0 28 nm SRAM 1241 12030046 5SGXB6 1760 FBGA 150 28 2197 0 28 nm SRAM 1209 12050025 5SGXA7 1517 FBGA 150 25 2063 0 28 nm SRAM 1712 12040014 EP1C4 400 FBGA 150 77 2000 0 0.13µ SRAM 1204 12010023 EP1S40 1508 FBGA 150 25 2000 0 0.13µ SRAM 1149 12080035 EP1S80 1508 FBGA 150 25 2000 0 0.13µ SRAM 1219 12070008 EP20K400C 672 FBGA 150 25 2000 0 0.15µ SRAM 1201 12050039 EP2AGX260 1152 FBGA 150 25 2054 0 40 nm SRAM 1205 36 REL LOT # DEVICE PACKAGE TYPE BAKE TEMP. # UNITS STRESS HOURS 12080006 12100012 EP2C8 144 TQFP 150 77 2000 EP2C8 208 PQFP 150 77 2000 12080037 EP2C20 240 PQFP 150 77 12110006 EP2C20 256 FBGA 150 12120018 EP2C20 240 PQFP 12030025 EP2C70 12040022 # FAIL TECHNOLOGY DATE CODE 0 0.09µ SRAM 1225 0 0.09µ SRAM 1231 2000 0 0.09µ SRAM 1231 77 2000 0 0.09µ SRAM 1243 150 77 2000 0 0.09µ SRAM 1243 672 FBGA 150 77 1500 0 0.09µ SRAM 1207 EP2C70 672 FBGA 150 77 2000 0 0.09µ SRAM 1207 12050035 EP2C70 672 FBGA 150 77 2000 0 0.09µ SRAM 1207 12070001 EP2C70 672 FBGA 150 77 2000 0 0.09µ SRAM 1207 12090011 EP2C70 672 FBGA 150 77 2000 0 0.09µ SRAM 1219 12040010 EP2S90 1508 FBGA 150 25 2000 0 0.09µ SRAM 1207 12090020 EP2S90 1508 FBGA 150 25 2000 0 0.09µ SRAM 1213 11070010 EP3C120 780 FBGA 150 25 1502 0 60 nm SRAM 1126 12040030 EP3C120 780 FBGA 150 77 2000 0 60nm SRAM 1213 12060015 EP3C120 780 FBGA 150 77 2000 0 60nm SRAM 1222 12100005 EP3SE50 780 FBGA 150 25 2000 0 65 nm SRAM 1237 12070022 EP3SL150 1152 FBGA 150 25 2000 0 65 nm SRAM 1225 12010021 EP3SL200 1152 FBGA 150 25 2000 0 65 nm SRAM 1146 12080036 EP4CGX15 148 QFN 150 77 2000 0 60 nm SRAM 1210 12020033 EP4CGX150 896 FBGA 150 77 2000 0 60nm SRAM 1201 12080033 EP4SGX230 1517 FBGA 150 25 2000 0 40 nm SRAM 1208 12050041 EP4SGX530 1517 HBGA 150 25 2000 0 40 nm SRAM 1205 12030019 EPC1441 20 PLCC 150 45 1500 0 0.5µ EPROM 1207 12080001 EPC1S 20 PLCC 150 45 2000 0 0.5µ EPROM 1230 12020028 EPC2 20 PLCC 150 45 2000 0 0.4µ FLASH 1204 12100009 EPC16 88 UBGA 150 45 2000 0 0.35μ FLASH 1231 12020024 EPM570 144 TQFP 150 77 2000 0 0.18µ FLASH 1201 12040032 EPM1270 144 TQFP 150 77 2000 0 0.18µ FLASH 1213 12070013 EPM1270 256 FBGA 150 25 2000 0 0.18µ FLASH 1225 12070014 EPM1270 256 FBGA 150 25 1000 0 0.18µ FLASH 1225 12070015 EPM1270 256 FBGA 150 25 1000 0 0.18µ FLASH 1225 12080031 EPM1270 256 FBGA 150 77 2000 0 0.18µ FLASH 1219 12050002 EPM2210T 324 FBGA 150 77 1500 0 0.18µ FLASH 1211 12080009 EPM7064AE 100 TQFP 150 45 2000 0 0.35µ EEPROM 1230 12060013 EPM7256B 256 FBGA 150 25 2000 0 0.22µ EEPROM 1207 12040011 EPM7512AE 208 PQFP 150 25 2000 0 0.35µ EPROM 1207 12050023 HC325 780 FBGA 150 50 2000 0 40nm SRAM 1205 12050026 HC325 780 FBGA 150 50 2000 0 40nm SRAM 1205 12050027 HC325 780 FBGA 150 50 2000 0 40nm SRAM 1205 12030022 HC335 780 FBGA 150 30 1000 0 40 nm SRAM 1207 12030023 HC335 780 FBGA 150 30 1000 0 40 nm SRAM 1207 37 Reflow Simulation and Moisture Preconditioning Altera moisture soaks devices according to their J-STD020D moisture classification and then passes them through simulated 100% convection reflow soldering 3 times. Devices are examined for package cracks and are electrically tested after preconditioning and reflow soldering. The devices are then subjected to Reliability tests to assess package reliability. Accelerated Moisture Resistance Four different stresses are commonly used to assess moisture resistance of integrated circuits: - Temperature Humidity Bias (THB) at 85°C/85%RH, - Autoclave at 121°C/100%RH - Biased HAST at 130°C/85%RH - Unbiased HAST at 130°C/85%RH All four stresses can detect metallization corrosion and moisture induced charge loss in nonvolatile devices. In addition, THB and biased HAST can detect galvanic corrosion since they are biased. Per JESD47 recommendation, BGA packages will no longer be subjected to Autoclave testing. Unbiased HAST will be used instead. Autoclave The Autoclave stress subjects semiconductor devices to a 121°C saturated DI water steam environment. Unbiased HAST Reference: JESD22-A118 (JEDEC Standard) All lots are subjected to Unbiased HAST test after being preconditioned to JEDEC standard moisture sensitivity level (MSL) and subjected to a 3X reflow. Autoclave & Unbiased HAST Results REL LOT # 14110009 14110010 14110012 14110020 14110021 14110024 14110032 14110033 14110034 14120005 14120006 14120007 15010009 15010015 15010016 15010032 15010033 15020008 15020009 15020010 15020012 DEVICE PACKAGE TYPE RELIABILITY TEST 5CGXC9 EP2C20 5CGXC9 EP2C5 EP2C35 5AGTD7 EPM1270 EP3C40 EPM240 EPM240 EPM240 EPM570 EP20K160 EP2C5 EPC16 EPM1270 EPM1270 EP3C10 EP3C25 EP2C70 5SX9E 1152 FBGA 240 PQFP 896 FBGA 256 FBGA 672 FBGA 1152 FBGA 256 FBGA 324 FBGA 100 FBGA 100 MBGA 100 MBGA 256 FBGA 356 SBGA 256 FBGA 88 UBGA 256 FBGA 256 FBGA 256 FBGA 256 FBGA 896 FBGA 1517 SHBGA PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH # UNITS 30 30 30 30 30 25 30 30 30 30 30 30 25 30 45 20 20 30 30 30 25 STRESS HOURS 192 192 192 192 192 96 192 192 192 192 192 192 96 192 96 192 192 192 192 192 96 # FAIL 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 TECHNOLOGY 28nm SRAM 0.09µ SRAM 28nm SRAM 0.09µ SRAM 0.09µ SRAM 28nm SRAM 0.18µ FLASH 60nm SRAM 0.18µ FLASH 0.18µ FLASH 0.18µ FLASH 0.18µ FLASH 0.15µ SRAM 0.09µ SRAM 0.35µ FLASH 0.18µ FLASH 0.18µ FLASH 60nm SRAM 60nm SRAM 0.09µ SRAM 28nm SRAM 38 DATE CODE 1446 1437 1446 1443 1437 1447 1443 1443 1443 1443 1443 1443 1449 1437 1443 1501 1501 1501 1449 1449 1517 REL LOT # 15020020 15020021 15020022 15020024 15020026 15030001 15030002 15030005 15030007 15030020 15030033 15030035 15030036 15030037 15040015 15040016 15040020 15040034 15040038 15050003 15050009 DEVICE PACKAGE TYPE RELIABILITY TEST PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH # UNITS 30 30 30 30 30 30 30 30 30 25 30 30 30 25 30 30 30 25 25 30 30 STRESS HOURS 192 192 192 192 192 192 192 192 192 192 192 192 192 96 192 192 192 96 96 192 192 EP2C20 EPM1270 EP2C5 EPM240 5CSTD6 5CGXC9 EP4CGX150 EP2C35 EPM1270 5CSTD6 EP4CGX150 EP3C120 EP3C120 EP4SGX230 EPM1270 EPM1270 EP3C25 EP3SL200 EP1S80 EP2C8 EPM1270 256 FBGA 256 FBGA 208 PQFP 100 TQFP 896 FBGA 1152 FBGA 896 FBGA 672 FBGA 144 TQFP 896 FBGA 896 FBGA 780 FBGA 780 FBGA 1517 FBGA 256 FBGA 256 FBGA 240 PQFP 1152 FBGA 1508 FBGA 256 FBGA 256 FBGA 14010008 5CGXC7 14020037 EP2C8 896 FBGA PRECON 3- 130C/85% RH 30 192 144 TQFP PRECON 3- 130C/85% RH 30 192 14020051 EPM1270G 256 FBGA PRECON 3- 130C/85% RH 30 14030013 EP3C25 324 FBGA PRECON 3- 130C/85% RH 14030022 EPC2 20 PLCC 14030023 EPM7512AE 14030025 # FAIL 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0.09µ SRAM 0.18µ FLASH 0.09µ SRAM 0.18µ FLASH 28nm SRAM 28nm SRAM 60nm SRAM 0.09µ SRAM 0.18µ FLASH 28nm SRAM 60nm SRAM 60nm SRAM 60nm SRAM 40nm SRAM 0.18µ FLASH 0.18µ FLASH 60nm SRAM 65nm SRAM 0.13µ FLASH 0.09µ SRAM 0.18µ FLASH DATE CODE 1501 1501 1501 1501 1501 1501 1501 1437 1501 1510 1507 1507 1507 1507 1507 1507 1501 1513 1513 1513 1513 0 28nm SRAM 1343 0 0.09µ SRAM 1343 192 0 0.18µ FLASH 1343 20 192 0 60nm SRAM 1407 PRECON 3- 130C/85% RH 45 96 0 0.4µ FLASH 1407 208 PQFP PRECON 3- 130C/85% RH 25 96 0 0.35µ EEPROM 1401 EP2S30 672 FBGA PRECON 3- 130C/85% RH 25 96 0 0.09µ SRAM 1407 14030029 EPM1270 144 TQFP PRECON 3- 130C/85% RH 30 192 0 0.18µm FLASH 1407 14030031 EP3C120 780 FBGA PRECON 3- 130C/85% RH 30 96 0 60nm SRAM 1407 14040046 EPC16 88 UBGA PRECON 3- 130C/85% RH 45 96 0 0.35µ FLASH 1407 14040048 EPF10K100E 208 PQFP PRECON 3- 130C/85% RH 25 96 0 0.22µ SRAM 1431 14050011 EP2C20 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1413 14050012 EP2C5 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1413 14050018 5AGTD7 1152 FBGA PRECON 3- 130C/85% RH 25 96 0 28nm SRAM 1420 14050029 EP2C8 208 PQFP PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1413 14050030 5SGXA7 1517 FBGA PRECON 3- 130C/85% RH 25 192 0 28nm SRAM 1421 14060003 EPM240Z 100 TQFP PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1419 14060004 EPM1270 240 PQFP PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1419 14060011 EP2C20 240 PQFP PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1413 14060012 EP4CGX150 896 FBGA PRECON 3- 130C/85% RH 30 192 0 60nm SRAM 1419 14060023 5CGXC9 1152 FBGA PRECON 3- 130C/85% RH 30 192 0 28nm SRAM 1426 14060028 EP2C8 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1419 14070002 EP2C20 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1425 14070004 EP20K400 672 FBGA PRECON 3- 130C/85% RH 25 96 0 0.15µ SRAM 1419 14070005 EP3SL150 1152 FBGA PRECON 3- 130C/85% RH 25 96 0 65nm SRAM 1419 14070012 EPM570Z 144 PFBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1425 14070047 EPM7064S 44 TQFP PRECON 3- 130C/85% RH 45 96 0 0.5µ EEPROM 1419 14070049 EP3C120 484 PFBGA PRECON 3- 130C/85% RH 30 96 0 60nm SRAM 1407 14080001 EPM570 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1419 14080002 EPM2210 324 FBGA PRECON 3- 130C/85% RH 30 96 0 0.18µ FLASH 1419 14080004 5CGXC9 896 FBGA PRECON 3- 130C/85% RH 30 192 0 28nm SRAM 1428 14080005 EP3C120 780 FBGA PRECON 3- 130C/85% RH 15 192 0 60nm SRAM 1425 14080006 EP3C40 780 FBGA PRECON 3- 130C/85% RH 15 192 0 60nm SRAM 1425 TECHNOLOGY 39 REL LOT # DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS STRESS HOURS 14080007 EP2C35 672 FBGA PRECON 3- 130C/85% RH 15 192 14080011 EP2C35 672 FBGA PRECON 3- 130C/85% RH 15 192 14080014 EP2AGX125 780 FBGA PRECON 3- 130C/85% RH 25 14090003 EP2C20 256 FBGA PRECON 3- 130C/85% RH 14090004 EP2C5 256 FBGA 14090005 EPM1270 14090006 # FAIL TECHNOLOGY DATE CODE 0 0.09µ SRAM 1431 0 0.09µ SRAM 1431 192 0 40nm SRAM 1433 30 192 0 0.09µ SRAM 1431 PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1431 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1431 EP3C16 240 PQFP PRECON 3- 130C/85% RH 30 192 0 60nm SRAM 1431 14090007 EPM240 100 TQFP PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1431 14090015 EPM1270 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1431 14090016 EPM1270 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1431 14090017 EPM570 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1431 14090020 EPM1270 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1431 14090021 EPM570 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1431 14100001 EP3C120 780 FBGA PRECON 3- 130C/85% RH 30 192 0 60nm SRAM 1437 14100003 EP2C5 208 PQFP PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1437 14100004 EP4CGX150 896 FBGA PRECON 3- 130C/85% RH 30 192 0 60nm SRAM 1439 14100005 EP2S130 1508 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1437 14100006 5CGXC7 896 FBGA PRECON 3- 130C/85% RH 30 192 0 28nm SRAM 1437 14100014 EPM1270 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1437 14100015 EPM570 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1437 14100021 EPM570Z 144 TQFP PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1437 14100023 EP1S40 1020 FBGA PRECON 3- 130C/85% RH 25 96 0 0.13µ FLASH 1413 14100026 EP4SGX230 1517 FBGA PRECON 3- 130C/85% RH 25 96 0 40nm SRAM 1437 14100027 EP4SGX230 1517 FBGA PRECON 3- 130C/85% RH 25 96 0 40nm SRAM 1437 13100009 5SGXA7 1517 FBGA PRECON 3- 130C/85% RH 25 192 0 28 nm SRAM 1336 13100012 EP2C35 672 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1337 13100014 EPM570 144 TQFP PRECON 3- 130C/85% RH 30 96 0 0.18µ FLASH 1331 13100016 EP2C20 256 FBGA PRECON 3- 130C/85% RH 30 192 0 1337 13110008 EPM2210 324 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 0.18µ FLASH 13110009 EPM2210 324 FBGA PRECON 3- 130C/85% RH 15 192 0 0.18µ FLASH 1337 13110012 5CGXC9 1152 FBGA 30 192 0 EPM570 100 TQFP 15 192 0 28 nm SRAM 0.18µ FLASH 1346 13110022 PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH 13110023 EPM570 100 TQFP PRECON 3- 130C/85% RH 15 192 0 0.18µ FLASH 1343 13120007 EP4SGX239 1517 FBGA PRECON 3- 130C/85% RH 30 192 0 40 nm SRAM 1349 13120013 EP4SGX239 1517 FBGA PRECON 3- 130C/85% RH 30 192 0 40 nm SRAM 1349 13120014 EP2C90 240 PQFP PRECON 3- 130C/85% RH 29 192 0 0.09µ SRAM 1343 13120015 EP2C70 672 FBGA PRECON 3- 130C/85% RH 28 192 0 0.09µ SRAM 1343 13120023 EP3C120 780 FBGA 30 192 0 EP2C5 208 PQFP 29 192 0 60 nm SRAM 0.09µ SRAM 1343 13120031 PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH 13120032 EP2C5 256 FBGA PRECON 3- 130C/85% RH 29 192 0 0.09µ SRAM 1349 13120041 EP4SGX230 1517 FBGA 30 192 0 40 nm SRAM 1349 14010025 EP3C16 240 PQFP PRECON 3- 130C/85% RH PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 1343 14010026 EP4CGX150 896 FBGA PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 1349 14010027 EP2C8 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1343 14010033 EP3C55 780 FBGA PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 1401 14020019 5SGXA7 1517 FBGA PRECON 3- 130C/85% RH 25 192 0 28 nm SRAM 1406 14020041 EP20K600 652 TBGA PRECON 3- 130C/85% RH 30 192 0 1408 14020045 5CGXC9 1152 FBGA PRECON 3- 130C/85% RH 13 192 0 0.15µ SRAM 28 nm SRAM 14020046 5CGXC9 1152 FBGA PRECON 3- 130C/85% RH 13 192 0 28 nm SRAM 1410 14020054 EP2C8 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1401 14020055 EP3C120 780 FBGA PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 1401 14020056 EP2C20 256 FBGA PRECON 3- 130C/85% RH 30 192 0 1401 14020069 EPM570 144 TQFP PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 0.18µ FLASH 14020070 EPM1270 144 TQFP PRECON 3- 130C/85% RH 28 192 0 0.18µ FLASH 1401 40 1337 1343 1349 1410 1401 REL LOT # DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS STRESS HOURS # FAIL TECHNOLOGY DATE CODE 14030014 EP3C25 324 FBGA PRECON 3- 130C/85% RH 20 192 0 14040002 EPM1270 256 FBGA PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 0.18µ FLASH 1407 1407 14040005 EP2C8 208 PQFP PRECON 3- 130C/85% RH 30 192 13010053 5SX9E 1517 HBGA-FC 30 192 13010054 EPC1S 20 PLCC PRECON 4- 130C/85% RH PRECON 3- 130C/85% RH 0 0.09µ SRAM 1407 0 28 nm SRAM 45 1301 96 0 0.5µ EPROM 13010060 EP3SL200 1152 FBGA PRECON 3- 130C/85% RH 1249 25 96 0 65 nm SRAM 13010061 EP2C70 672 FBGA 1237 PRECON 3- 130C/85% RH 30 96 0 0.09µ SRAM 13020080 EPC2 1243 20 PLCC PRECON 3- 130C/85% RH 45 96 0 0.4µ FLASH 13020083 1301 EPM7512A 208 PQFP PRECON 3- 130C/85% RH 25 96 0 0.35µ EEPROM 1301 13030016 EP1S40 1020 FBGA-FC PRECON 3- 130C/85% RH 25 96 0 0.13µ SRAM 1307 13030057 EP2C70 896 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1324 13030062 EPF10K100 208 PQFP PRECON 3- 130C/85% RH 25 96 0 0.22µ SRAM 1307 13040002 EP4SGX530Z 1517 HBGA-FC PRECON 3- 130C/85% RH 25 192 0 40 nm SRAM 1231 13040006 EP2AGX260 1152 FBGA-FC PRECON 3- 130C/85% RH 25 192 0 40 nm SRAM 1307 13040011 EP3C120 780 FBGA PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 1307 13040027 EPM2210 100 PQFP PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1315 13040028 EPM2210 100 PQFP PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1315 13040029 EPM2210 100 PQFP PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1315 13040031 EP3C35 672 FBGA PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 1313 13040035 5CGXC9 1152 FBGA PRECON 3- 130C/85% RH 30 192 0 28 nm SRAM 1225 13040041 EP2S90 1508 FBGA-FC PRECON 3- 130C/85% RH 25 96 0 0.09µ SRAM 1313 13040044 EPM1270 144 TQFP PRECON 3- 130C/85% RH 30 96 0 0.18µ FLASH 1307 13040053 5CGXC9 1152 FBGA PRECON 3- 130C/85% RH 30 192 0 28 nm SRAM 1225 13040057 EP2C70 896 FBGA PRECON 3- 130C/85% RH 53 192 0 0.09µ SRAM 1324 13040058 EP2C35 672 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1324 13050006 5SX9E 1517 HBGA-FC PRECON 4- 130C/85% RH 25 192 0 28 nm SRAM 1319 13050011 5AGTD7 1152 FBGA PRECON 3- 130C/85% RH 25 192 0 28 nm SRAM 1320 13050018 EP20K400C 672 FBGA-FC PRECON 3- 130C/85% RH 25 96 0 0.15µ SRAM 1313 13060003 5CGXC7 484 UBGA PRECON 3- 130C/85% RH 30 192 0 28 nm SRAM 1316 13060004 5CGXC7 484 UBGA PRECON 3- 130C/85% RH 30 192 0 28 nm SRAM 1316 13060005 5CGXC7 484 UBGA PRECON 3- 130C/85% RH 30 192 0 28 nm SRAM 1316 13060011 EP3C120 780 FBGA PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 1324 13060012 EP3C120 780 FBGA PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 1324 13060020 EP2S90 1020 FBGA-FC PRECON 3- 130C/85% RH 25 192 0 0.09µ SRAM 1319 13060021 EPM7064S 44TQFP PRECON 3- 130C/85% RH 45 96 0 0.5µ EEPROM 1319 13060022 EPM2210 256 FBGA PRECON 3- 130C/85% RH 30 96 0 0.18µ FLASH 1319 13060024 EPC1S 20 PLCC PRECON 3- 130C/85% RH 45 96 0 0.5µ EPROM 1319 13070005 EPC16 88 UBGA PRECON 3- 130C/85% RH 30 96 0 0.35µ FLASH 1319 13070006 EP3C40 484 FBGA PRECON 3- 130C/85% RH 28 192 0 60 nm SRAM 1325 13070009 EP3C25 240 PQFP PRECON 3- 130C/85% RH 30 192 0 60 nm SRAM 1325 13070017 EPF10K70 240 RQFP PRECON 3- 130C/85% RH 25 96 0 0.42µ SRAM 1319 13070022 EP3SL150 1152 FBGA-FC PRECON 3- 130C/85% RH 25 96 0 65 nm SRAM 1325 13070024 EPM570 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.18µ FLASH 1319 13070032 EPM240 100 MBGA PRECON 3- 130C/85% RH 24 192 0 0.18µ FLASH 1313 13080023 EP2C5 256 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1331 13090002 EP2C70 896 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1336 13090004 5CGXC9 1152 FBGA PRECON 3- 130C/85% RH 30 192 0 28 nm SRAM 1225 13090007 EP2C35 672 FBGA PRECON 3- 130C/85% RH 30 192 0 0.09µ SRAM 1331 13090015 EP2S130 1508 FBGA-FC PRECON 3- 130C/85% RH 25 96 0 0.09µ SRAM 1331 13090020 EP2C70 896 FBGA PRECON 3- 130C/85% RH 28 192 0 0.09µ SRAM 1331 13090029 5AGTD7 1152 FBGA PRECON 3- 130C/85% RH 25 192 0 28 nm SRAM 1320 13100001 5AGTD7 1152 FBGA PRECON 3- 130C/85% RH 25 192 0 28 nm SRAM 1339 13100007 5AGTD7 1152 FBGA PRECON 3- 130C/85% RH 25 192 0 28 nm SRAM 1340 13100011 EP4SGX230 1517 FBGA PRECON 3- 130C/85% RH 25 96 0 40 nm SRAM 1337 41 REL LOT # DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS STRESS HOURS 12100008 5AGTD7 1517 FBGA PRECON 3- 130 C/85% RH 12100025 5AGTD7 1152 FBGA PRECON 3- 130 C/85% RH o 25 192 o 30 192 12040031 5CGXC7 896 FBGA PRECON 3- 130 C/85% RH o 30 12060017 5CGXC7 896 FBGA PRECON 3- 130oC/85% RH 12060033 5CGXC7 896 FBGA PRECON 3- 130oC/85% RH 12060035 5CGXC7 896 FBGA PRECON 3- 130 C/85% RH 12080012 5CGXC7 896 FBGA PRECON 3- 130 C/85% RH 12080030 5CGXC7 896 FBGA PRECON 3- 130 C/85% RH 12100003 5CGXC9 1152 FBGA 12100027 5CGXC7 12100030 TECHNOLOGY DATE CODE 0 28 nm SRAM 1235 0 28 nm SRAM 1236 96 0 28 nm SRAM 1205 45 96 0 28 nm SRAM 1206 30 96 0 28 nm SRAM 1226 o 45 96 0 28 nm SRAM 1225 o 45 96 0 28 nm SRAM 1206 o 45 96 0 28 nm SRAM 1233 PRECON 3- 130 C/85% RH o 30 96 0 28 nm SRAM 1225 896 FBGA PRECON 3- 130oC/85% RH 45 96 0 28 nm SRAM 1206 5CGXC9 1152 FBGA PRECON 3- 130oC/85% RH 30 96 0 28 nm SRAM 1225 12100032 5CGXC9 896 FBGA PRECON 3- 130 C/85% RH o 25 96 0 28 nm SRAM 1205 12110040 5CGXC9 1152 FBGA PRECON 3- 130 C/85% RH o 45 96 0 28 nm SRAM 1225 12110042 5CGXC7 896 FBGA PRECON 3- 130 C/85% RH o 30 96 0 28 nm SRAM 1206 12020024 5M240Z 144 TQFP PRECON 3- 130oC/85% RH 77 192 0 0.18µ FLASH 1201 12010017 5M2210Z 256 FBGA PRECON 3- 130oC/85% RH 77 192 0 0.18µ FLASH 1201 12020026 5SGXA7 1760 FBGA PRECON 4- 130oC/85% RH 30 192 0 28 nm SRAM 1202 12050032 5SGXB6 1517 FBGA PRECON 4- 130oC/85% RH 30 192 0 28 nm SRAM 1205 12090027 5SGXAB 1932 FBGA PRECON 4- 130oC/85% RH 30 192 0 28 nm SRAM 1209 12110034 5SGXAB 1932 FBGA PRECON 4- 130oC/85% RH 30 192 0 28 nm SRAM 1211 13010053 5SGXAB 1517 FBGA PRECON 4- 130oC/85% RH 30 192 0 28 nm SRAM 1301 12110047 EP1C6 144 TQFP PRECON 3- 121°C/100% RH 77 96 0 0.13µ SRAM 1219 12010023 EP1S40 1508 FBGA PRECON 3- 130oC/85% RH 25 96 0 0.13µ SRAM 1149 12080035 EP1S80 1508 FBGA PRECON 3- 130oC/85% RH 25 96 0 0.13µ SRAM 1219 12050013 EP20K100B 356BGA PRECON 3- 130oC/85% RH 25 96 0 0.22µ SRAM 1213 12020014 EP20K100E 240 PQFP PRECON 3- 130oC/85% RH 25 96 0 0.18µ SRAM 1125 12110011 EP20K160E 356 BGA PRECON 3- 130oC/85% RH 25 96 0 0.18µ SRAM 1237 12070008 EP20K400C 672 FBGA PRECON 3- 130oC/85% RH 25 96 0 0.15µ SRAM 1121 12120017 EP2AGX125 1152 FBGA PRECON 3- 130oC/85% RH 25 192 0 40 nm SRAM 1237 12050039 EP2AGX260 1152 FBGA PRECON 3- 130oC/85% RH 25 192 0 40 nm SRAM 1205 12040001 EP2C8 144 TQFP PRECON 3- 130oC/85% RH 80 192 0 0.09µ SRAM 1207 12080006 EP2C8 144 TQFP PRECON 3- 130oC/85% RH 77 192 0 0.09µ SRAM 1225 12100012 EP2C8 208 PQFP PRECON 3- 130oC/85% RH 77 192 0 0.09µ SRAM 1231 12080037 EP2C20 240PQFP PRECON 3- 130oC/85% RH 77 192 0 0.09µ SRAM 1231 12110006 EP2C20 256 FBGA PRECON 3- 130oC/85% RH 77 96 0 0.09µ SRAM 1243 12030025 EP2C70 672FBGA PRECON 3- 130oC/85% RH 77 192 0 0.09µ SRAM 1207 12040022 EP2C70 672FBGA PRECON 3- 130oC/85% RH 77 192 0 0.09µ SRAM 1207 12050035 EP2C70 672FBGA PRECON 3- 130oC/85% RH 77 192 0 0.09µ SRAM 1207 12070001 EP2C70 672 FBGA PRECON 3- 130oC/85% RH 77 96 0 0.09µ SRAM 1207 12090011 EP2C70 672 FBGA PRECON 3- 130oC/85% RH 77 96 0 0.09µ SRAM 1219 12120018 EP2C90 240 PQFP PRECON 3- 130oC/85% RH 77 192 0 0.09µ SRAM 1243 12040010 EP2S90 1508 FBGA PRECON 3- 130oC/85% RH 25 96 0 0.09µ SRAM 1207 12090020 EP2S90 1508 FBGA PRECON 3- 130oC/85% RH 25 96 0 0.09µ SRAM 1213 12110012 EP3C25 144 EQFP PRECON 3- 130oC/85% RH 77 192 0 60 nm SRAM 1237 12040030 EP3C120 780 FBGA PRECON 3- 130 C/85% RH 77 192 0 60 nm SRAM 1213 12060015 EP3C120 780 FBGA PRECON 3- 130oC/85% RH 77 96 0 60 nm SRAM 1222 12040012 EP3C120 780 FBGA PRECON 3- 130oC/85% RH 24 96 0 60 nm SRAM 1214 12100005 EP3SE50 780 FBGA PRECON 3- 130oC/85% RH 25 96 0 65 nm SRAM 1237 12070022 EP3SL150 1152 FBGA PRECON 3- 130oC/85% RH 25 96 0 65 nm SRAM 1225 12010021 EP3SL200 1152 FBGA PRECON 3- 130oC/85% RH 25 96 0 65 nm SRAM 1146 12080036 EP4CGX15 148 QFN PRECON 3- 130oC/85% RH 77 192 0 60 nm SRAM 1131 12020033 EP4CGX150 896 FBGA PRECON 3- 130oC/85% RH 77 192 0 60 nm SRAM 1201 12080033 EP4SGX230 1517 FBGA PRECON 3- 130oC/85% RH 25 192 0 40 nm SRAM 1208 12050041 EP4SGX530 1517HBGA PRECON 3- 130oC/85% RH 25 96 0 40 nm SRAM 1205 o # FAIL 42 REL LOT # DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS STRESS HOURS 12080001 EPC1 20 PLCC PRECON 3- 130oC/85% RH 45 96 12080001 EPC1S 20 PLCC PRECON 3- 121°C/100% RH 45 96 12030019 EPC1441 20 PLCC PRECON 3- 130 C/85% RH o 45 12100009 EPC16 88 UBGA PRECON 3- 130 C/85% RH o 12020028 EPC2 20 PLCC o 12090012 EPF10K70 12030028 TECHNOLOGY DATE CODE 0 0.5µ EPROM 1230 0 0.5µ EPROM 1230 96 0 0.5µ EPROM 1207 45 96 0 0.35µ FLASH 1231 PRECON 3- 130 C/85% RH 45 96 0 0.4µ FLASH 1204 240 RQFP PRECON 3- 130oC/85% RH 25 96 0 0.42µ SRAM 1231 EPF10K100E 208 PQFP PRECON 3- 130oC/85% RH 25 96 0 0.22µ SRAM 1143 12090021 EPF6016 208 PQFP PRECON 3- 130 C/85% RH 25 96 0 0.42µ SRAM 1225 12030039 EPM1270 256 FBGA PRECON 3- 121°C/100% RH 69 96 0 0.18µ FLASH 1203 12080031 EPM1270 256 FBGA PRECON 3- 121°C/100% RH 77 96 0 0.18µ FLASH 1219 12040032 EPM1270 144 TQFP PRECON 3- 121°C/100% RH 77 192 0 0.18µ FLASH 1213 12110027 EPM1270 144 TQFP PRECON 3- 121°C/100% RH 77 192 0 0.18µ FLASH 1245 12050002 EPM2210G 324 FBGA PRECON 3- 130oC/85% RH 77 96 0 0.18µ FLASH 1206 12060014 EPM2210G 256 FBGA PRECON 3- 130 C/85% RH 80 96 0 0.18µ FLASH 1207 12030003 EPM240 100 TQFP PRECON 3- 130oC/85% RH 65 192 0 0.18µ FLASH 1207 12120006 EPM240 100 MBGA PRECON 3- 130 C/85% RH 77 192 0 0.18µ FLASH 1243 12080009 EPM7064AE 100 TQFP PRECON 3- 121oC/100% RH 45 96 0 0.3µ EEPROM 1230 12110039 EPM7064S 44 TQFP PRECON 3- 121°C/100% RH 45 96 0 0.5µ EEPROM 1237 12040011 EPM7512AE 208 PQFP PRECON 3- 130oC/85% RH 25 96 0 0.35µ EEPROM 1207 o o o # FAIL 43 Temperature Humidity Bias Reference: JESD22-A101 (JEDEC Standard) All lots are subjected to Biased Humidity test after being preconditioned to JEDEC standard moisture sensitivity level (MSL) and subjected to a 3X reflow. Stress can last up to 2000 Hrs. Temperature Humidity Bias Results DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS STRESS HOURS 14100001 14100004 14100023 14100026 14100027 14110021 14110024 15010009 15020008 15020009 15030001 EP3C120 EP4CGX150 EP1S40Z EP4SGX230 EP4SGX230 EP2C35 5AGTD7 EP20K160 EP3C10 EP3C25 5CGXC9 780 FBGA 896 FBGA 1020 FBGA 1517 FBGA 1517 FBGA 672 FBGA 1152 FBGA 356 SBGA 256 FBGA 256 FBGA 1152 FBGA PRECON 3-85/85THB PRECON 3-85/85THB PRECON 3-85/85THB PRECON 3-85/85THB PRECON 3-85/85THB PRECON 3-85/85THB PRECON 3-85/85THB PRECON 3-85/85THB PRECON 3-85/85THB PRECON 3-85/85THB PRECON 3-85/85THB 30 30 25 25 25 30 25 25 30 30 30 1000 1000 1000 1000 1000 1000 1000 1000 1500 1500 1000 0 0 0 0 0 0 0 0 0 0 0 60nm SRAM 60nm SRAM 0.13µ SRAM 40 nm SRAM 40 nm SRAM 28nm SRAM 1437 1439 1413 1437 1437 1437 1447 1449 1501 1449 1510 14020055 EP3C120 780 FBGA PRECON 3-85/85THB 30 1000 0 60nm SRAM 1401 14020057 EP3SL120 1152 FBGA PRECON 3-85/85THB 25 1000 0 65nm SRAM 1325 14040010 EP4CGX150 896 FBGA PRECON 3-85/85THB 30 2000 0 60nm SRAM 1407 14040049 EP2AGX260 1152 FBGA PRECON 3-85/85THB 30 2000 0 40nm SRAM 1418 14050018 5AGTD7 1152 FBGA PRECON 3-85/85THB 25 1000 0 28nm SRAM 1420 14050030 5SGXA7 1517 FBGA PRECON 3-85/85THB 25 1074 0 28nm SRAM 1421 14060022 5CGXC7 896 FBGA PRECON 3-85/85THB 30 1000 0 28nm SRAM 1426 14070004 EP20K400 672 FBGA PRECON 3-85/85THB 25 1000 0 0.15µ SRAM 1419 14070005 EP3SL150 1152 FBGA PRECON 3-85/85THB 30 1000 0 65nm SRAM 1419 14080004 5CGXC9 896 FBGA PRECON 3-85/85THB 30 2000 0 28nm SRAM 1428 13090029 5AGTD7 1152 FBGA PRECON 3-85/85THB 25 1000 0 28 nm SRAM 1320 13100001 5AGTD7 1152 FBGA PRECON 3-85/85THB 25 1000 0 28 nm SRAM 1339 13100007 5AGTD7 1152 FBGA PRECON 3-85/85THB 25 1000 0 28 nm SRAM 1340 13100009 5SGXA7 1517 FBGA PRECON 3-85/85THB 25 1000 0 28 nm SRAM 1336 13100012 EP2C35 672 FBGA PRECON 3-85/85THB 28 1000 0 0.09µ SRAM 1337 13120007 EP4SGX230 1517 FBGA PRECON 3-85/85THB 30 2000 0 40 nm SRAM 1349 13120013 EP4SGX230 1517 FBGA PRECON 3-85/85THB 30 1000 0 40 nm SRAM 1349 14010026 EP4CGX150 896 FBGA PRECON 3-85/85THB 30 1000 0 60nm SRAM 1349 14020019 5SGXA7 1517 FBGA PRECON 3-85/85THB 25 1000 0 28 nm SRAM 1406 14020045 5CGXC9 1152 FBGA PRECON 3-85/85THB 16 1000 0 28 nm SRAM 1410 14020046 5CGXC9 1152 FBGA PRECON 3-85/85THB 10 1000 0 28 nm SRAM 1410 13010017 EP4CGX150 896 FBGA PRECON 3-85/85THB 30 1000 0 60nm SRAM 1243 13010060 EP3SL200 1152 FBGA-FC PRECON 3-85/85THB 25 1000 0 65nm SRAM 1237 13010060 EP2C70 672 FBGA PRECON 3-85/85THB 30 1000 0 0.09µ SRAM 1243 13010063 EP2C70 672 FBGA PRECON 3-85/85THB 60 1000 0 0.09µ SRAM 1249 13030016 EP1S40Z 1020 FBGA-FC PRECON 3-85/85THB 25 1000 0 0.13µ SRAM 1307 13030022 EP3C16 256 FBGA PRECON 3-85/85THB 30 1000 0 60 nm SRAM 1301 13040006 EP2AGX260 1152 FBGA-FC PRECON 3-85/85THB 25 1000 0 40 nm SRAM 1307 13040011 EP3C120 780 FBGA PRECON 3-85/85THB 30 1000 0 60 nm SRAM 1307 13040031 EP2C35 672 FBGA PRECON 3-85/85THB 30 1000 0 0.09µ SRAM 1313 13040042 EP2S90 1020 FBGA-FC PRECON 3-85/85THB 25 1000 0 0.09µ SRAM 1307 13050011 5AGTD7 1152 FBGA PRECON 3-85/85THB 25 1000 0 28 nm SRAM 1320 13050018 EP20K400C 672 FBGA-FC PRECON 3-85/85THB 25 1000 0 0.15µ SRAM 1313 REL LOT # # FAIL TECHNOLOGY DATE CODE 0.09µ SRAM 28nm SRAM 0.15µ SRAM 60nm SRAM 60nm SRAM 44 DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS STRESS HOURS TECHNOLOGY DATE CODE 13060020 EP2S90 1020 FBGA-FC PRECON 3-85/85THB 25 1000 13070009 EP3C25 240 PQFP PRECON 3-85/85THB 30 2000 0 0.09µ SRAM 1319 0 60 nm SRAM 13070010 EP4CGX150 896 FPGA PRECON 3-85/85THB 30 1325 1000 0 60 nm SRAM 13070016 5SX9E 1932 FBGA-FC PRECON 4-85/85THB 1325 30 1000 0 28 nm SRAM 13070022 EP3SL150 1152 FBGA-FC 1325 PRECON 3-85/85THB 25 1000 0 65 nm SRAM 12100008 5AGTD7 1325 1517 FBGA PRECON 3-85/85THB 24 1000 0 28 nm SRAM 12040021 1235 5CGXC7 896 FBGA PRECON 3-85/85THB 30 1000 0 28 nm SRAM 1205 12040031 5CGXC7 896 FBGA PRECON 3-85/85THB 30 1000 0 28 nm SRAM 1205 12060017 5CGXC7 896 FBGA PRECON 3-85/85THB 27 1000 0 28 nm SRAM 1206 12060035 5CGXC7 896 FBGA PRECON 3-85/85THB 27 1000 0 28 nm SRAM 1225 12080012 5CGXC7 896 FBGA PRECON 3-85/85THB 27 1000 0 28 nm SRAM 1206 12080030 5CGXC7 896 FBGA PRECON 3-85/85THB 27 1000 0 28 nm SRAM 1233 12100003 5CGXC9 1152 FBGA PRECON 3-85/85THB 30 1000 0 28 nm SRAM 1225 12100027 5CGXC7 896 FBGA PRECON 3-85/85THB 27 1000 0 28 nm SRAM 1206 12100030 5CGXC9 1152 FBGA PRECON 3-85/85THB 30 1000 0 28 nm SRAM 1225 12100032 5CGXC9 896 FBGA PRECON 3-85/85THB 25 1000 0 28 nm SRAM 1205 12110040 5CGXC9 1152 FBGA PRECON 3-85/85THB 30 1000 0 28 nm SRAM 1225 12110042 5CGXC7 896 FBGA PRECON 3-85/85THB 30 1000 0 28 nm SRAM 1206 12030040 5SGXA7 1517 FBGA PRECON 4-85/85THB 30 1000 0 28 nm SRAM 1203 12050021 5SGXA7 1517 FBGA PRECON 4-85/85THB 30 1000 0 28 nm SRAM 1205 12090027 5SGX9E 1932 FBGA PRECON 4-85/85THB 30 1000 0 28 nm SRAM 1209 12110034 5SGX9E 1932 FBGA PRECON 4-85/85THB 30 1000 0 28 nm SRAM 1211 12010023 EP1S40 1508 FBGA PRECON 3-85/85THB 25 1000 0 0.13µ SRAM 1149 12080035 EP1S80 1508 FBGA PRECON 3-85/85THB 25 1000 0 0.13µ SRAM 1219 12050013 EP20K100N 356 BGA PRECON 3-85/85THB 25 1000 0 0.22µ SRAM 1213 12110011 EP20K160E 356 BGA PRECON 3-85/85THB 25 1000 0 0.18µ SRAM 1237 12070008 EP20K400C 672 FBGA PRECON 3-85/85THB 25 1000 0 0.15µ SRAM 1201 12120017 EP2AGX125 1152 FBGA PRECON 3-85/85THB 27 2000 0 40 nm SRAM 1237 12050039 EP2AGX260 1152 FBGA PRECON 3-85/85THB 25 1000 0 40 nm SRAM 1205 12030025 EP2C70 672 FBGA PRECON 3-85/85THB 77 1000 0 0.09µ SRAM 1207 12050035 EP2C70 672 FBGA PRECON 3-85/85THB 77 2000 0 0.09µ SRAM 1207 12070001 EP2C70 672 FBGA PRECON 3-85/85THB 77 2000 0 0.09µ SRAM 1207 12090011 EP2C70 672 FBGA PRECON 3-85/85THB 77 1000 0 0.09µ SRAM 1219 12040018 EP2S90 1020 FBGA PRECON 3-85/85THB 25 1000 0 0.09µ SRAM 1207 12040030 EP3C120 780 FBGA PRECON 3-85/85THB 77 2000 0 60 nm SRAM 1213 12060015 EP3C120 780 FBGA PRECON 3-85/85THB 77 1000 0 60 nm SRAM 1222 12070022 EP3SL150 1152 FBGA PRECON 3-85/85THB 25 1000 0 65 nm SRAM 1225 12080036 EP4CGX15 148 QFN PRECON 3-85/85THB 77 2000 0 60 nm SRAM 1231 12050042 EP4SGX230 1517 FBGA PRECON 3-85/85THB 25 1000 0 40 nm SRAM 1205 12080033 EP4SGX230 1517 FBGA PRECON 3-85/85THB 25 1000 0 40 nm SRAM 1208 REL LOT # # FAIL 45 Highly Accelerated Stress Testing Reference: JESD22-A110 (JEDEC Standard) All lots are subjected to HAST test after being preconditioned to JEDEC standard moisture sensitivity level (MSL) and subjected to a 3X reflow HAST Results REL LOT # 14110010 14110020 14110032 14120007 15010015 15010016 15010033 15020020 15020021 15010022 15020024 15040016 15040017 15050009 DEVICE EP2C20 EP2C5 EPM1270 EPM570 EP2C5 EPC16 EPM1270 EP2C20 EPM1270 EP2C5 EPM240 EPM1270 EPM7256AE EPM1270 PACKAGE TYPE 240 PQFP 256 FBGA 256 FBGA 256 FBGA 256 FBGA 88 UBGA 256 FBGA 256 FBGA 256 FBGA 208 PQFP 100 TQFP 256 FBGA 256 FBGA 256 FBGA RELIABILITY TEST # UNITS PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST 30 30 30 30 30 45 40 30 30 30 30 30 25 30 STRESS HOURS 192 192 192 192 192 96 192 192 192 192 192 192 96 192 # FAIL 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0.09µ SRAM 0.35µ FLASH 0.18µ FLASH 0.09µ SRAM 0.18µ FLASH 0.09µ SRAM 0.18µ FLASH 0.18µ FLASH 0.35µ FLASH 0.18µ FLASH DATE CODE 1437 1443 1443 1443 1437 1443 1501 1501 1501 1501 1501 1507 1513 1513 TECHNOLOGY 0.09µ SRAM 0.09µ SRAM 0.18µ FLASH 0.18µ FLASH 14020037 EP2C8 144 TQFP PRECON 3-HAST 30 192 0 0.09µ SRAM 1401 14020051 EPM1270 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1401 14030022 EPC2 20 PLCC PRECON 3-HAST 45 96 0 0.35µ FLASH 1407 14030023 EPM7512AE 208 PQFP PRECON 3-HAST 25 96 0 0.35µEEPROM 1401 14030029 EPM1270 144 TQFP PRECON 3-HAST 30 192 0 0.18µ FLASH 1407 14040011 EPF10K50 356 SBGA PRECON 3-HAST 25 96 0 0.3u SRAM 1407 14040046 EPC16 88 UBGA PRECON 3-HAST 45 96 0 0.35µ FLASH 1407 14040048 EPF10K100 208 PQFP PRECON 3-HAST 25 96 0 0.22µ SRAM 1407 14050029 EP2C8 208 PQFP PRECON 3-HAST 30 192 0 0.09µ SRAM 1413 14060002 EPM1270 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1423 14060003 EPM240Z 100 TQFP PRECON 3-HAST 30 192 0 0.18µ FLASH 1419 14060004 EPM1270 144 TQFP PRECON 3-HAST 30 192 0 0.18µ FLASH 1419 14060011 EP2C20 240 PQFP PRECON 3-HAST 30 192 0 1413 14060029 EP2C8 208 PQFP PRECON 3-HAST 30 192 0 0.09µ SRAM 0.09µ SRAM 14070002 EP2C20 256 FBGA PRECON 3-HAST 30 192 0 0.09µ SRAM 1425 14070012 EPM570Z 144 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1425 14070047 EPM7064 44 TQFP PRECON 3-HAST 45 96 0 0.5µ EEPROM 1419 14080001 EPM570 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1419 14090003 EP2C20 256 FBGA PRECON 3-HAST 30 192 0 0.09µ SRAM 1431 14090005 14090006 14090007 EPM1270 EP3C16 EPM240 256 FBGA 240 PQFP 100 TQFP PRECON 3-HAST PRECON 3-HAST PRECON 3-HAST 30 30 30 192 192 192 0 0 0 0.18µ FLASH 60nm SRAM 0.18µ FLASH 1431 1431 1431 1419 14090008 EPM240 100 TQFP PRECON 3-HAST 30 96 0 0.18µ FLASH 1431 14090015 EPM1270 256 FBGA PRECON 3-HAST 30 96 0 0.18µ FLASH 1431 14090016 EPM1270 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1431 14090017 EPM570 256 FBGA PRECON 3-HAST 30 96 0 0.18µ FLASH 1431 14090020 EPM1270 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1431 14090021 EPM570 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1431 14100003 EP2C5 208 PQFP PRECON 3-HAST 30 192 0 0.09µ SRAM 1437 14100014 EPM1270 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1437 14100015 EPM570 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1437 46 REL LOT # DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS STRESS HOURS 14100017 EPM570 256 FBGA PRECON 3-HAST 30 192 14100021 EPM570Z 144 TQFP PRECON 3-HAST 30 192 14100037 EPM7256 256 FBGA PRECON 3-HAST 25 13100027 EP2C5 256 FBGA PRECON 3-HAST 13110022 EPM570G 100 TQFP 13110023 EPM570G 13110030 # FAIL TECHNOLOGY DATE CODE 0 0.18µ FLASH 1437 0 0.18µ FLASH 1437 96 0 0.22µ FLASH 1437 30 192 0 0.09µ SRAM 1337 PRECON 3-HAST 15 192 0 0.18µ FLASH 1343 100 TQFP PRECON 3-HAST 15 192 0 0.18µ FLASH 1343 EPM1270 256 FBGA PRECON 3-HAST 30 96 0 0.18µ FLASH 1343 13120014 EP2C20 240 PQFP PRECON 3-HAST 29 192 0 0.09µ SRAM 1343 13120031 EP2C5 208 PQFP PRECON 3-HAST 29 192 0 0.09µ SRAM 1349 14010024 EPM2210 256 FBGA PRECON 3-HAST 28 192 0 0.18µ FLASH 1401 14020056 EP2C20 256 FBGA PRECON 3-HAST 30 192 0 0.09µ SRAM 1401 14020069 EPM570 144 TQFP PRECON 3-HAST 30 192 0 0.18µ FLASH 1401 14020070 EPM1270 144 TQFP PRECON 3-HAST 28 192 0 0.18µ FLASH 1401 14040002 EPM1270 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1407 14040005 EP2C8 208 PQFP PRECON 3-HAST 30 192 0 0.09µ SRAM 1407 13010011 EP2C8 256 FBGA PRECON 3-HAST 30 192 0 0.09µ SRAM 1243 12010054 EPC1S 20 PLCC PRECON 3-HAST 45 96 0 0.5µ EPROM 1249 13020067 EPM1270 256 FBGA PRECON 3-HAST 30 96 0 0.18µ FLASH 1243 13020080 EPC2 20 PLCC PRECON 3-HAST 45 96 0 0.4µ FLASH 1301 13030014 EPF10K50A 356 SBGA PRECON 3-HAST 25 96 0 0.3µ SRAM 1243 13030019 EPM2210 100 PQFP PRECON 3-HAST 30 192 0 0.18µ FLASH 1313 13030062 EPF10K100E 208 PQFP PRECON 3-HAST 25 96 0 0.22µ SRAM 1307 13040019 EPM2210 100 PQFP PRECON 3-HAST 30 96 0 0.18µ FLASH 1315 13040020 EPM2210 100 PQFP PRECON 3-HAST 30 96 0 0.18µ FLASH 1315 13040025 EPM2210 100 PQFP PRECON 3-HAST 30 96 0 0.18µ FLASH 1315 13040026 EPM240 100 TQFP PRECON 3-HAST 25 192 0 0.18µ FLASH 1307 13040027 EPM2210 100 PQFP PRECON 3-HAST 30 96 0 0.18µ FLASH 1315 13040028 EPM2210 100 PQFP PRECON 3-HAST 30 96 0 0.18µ FLASH 1315 13040029 EPM2210 100 PQFP PRECON 3-HAST 30 96 0 0.18µ FLASH 1315 13040032 EP2C5 208 PQFP PRECON 3-HAST 30 192 0 0.09µ SRAM 1313 13040033 EP2C8 256 FBGA PRECON 3-HAST 30 192 0 0.09µ SRAM 1315 13040044 EPM1270 144 TQFP PRECON 3-HAST 29 96 0 0.18µ FLASH 1307 13050012 EP2C8 208 PQFP PRECON 3-HAST 30 192 0 0.09µ SRAM 1313 13050015 EP2C8 256 FBGA PRECON 3-HAST 30 96 0 0.09µ SRAM 1313 13060021 EPM7064S 44 TQFP PRECON 3-HAST 45 96 0 0.5µ EEPROM 1319 13060022 EPM2210 256 FBGA PRECON 3-HAST 30 96 0 0.18µ FLASH 1319 13060024 EPC1S 20 PLCC PRECON 3-HAST 45 96 0 0.5µ EPROM 1319 13060035 EP1C4 400 FBGA PRECON 3-HAST 30 96 0 0.13µ SRAM 1324 13070005 EPC16 88 UBGA PRECON 3-HAST 30 96 0 0.35u FLASH 1319 13070012 EP2C8 256 FBGA PRECON 3-HAST 30 192 0 0.09µ SRAM 1325 13070017 EPF10K70 240 RQFP PRECON 3-HAST 25 96 0 0.42µ SRAM 1319 13070024 EPM570 256 FBGA PRECON 3-HAST 30 192 0 0.18µ FLASH 1319 13080004 EPM1270 256 FBGA PRECON 3-HAST 35 192 0 0.18µ FLASH 1319 13080005 EPM570 256 FBGA PRECON 3-HAST 35 192 0 0.18µ FLASH 1325 13080006 EP2C8 256 FBGA PRECON 3-HAST 30 192 0 0.09µ SRAM 1325 13080023 EP2C5 256 FBGA PRECON 3-HAST 30 192 0 0.09µ SRAM 1331 12020024 5M240Z 144 TQFP PRECON 3-HAST. 77 192 0 0.18µ FLASH 1201 12010017 5M2210Z 256 FBGA PRECON 3-HAST 77 192 0 0.18µ FLASH 1201 12040014 EP1C4 400 FBGA PRECON 3-HAST 77 96 0 0.13µ SRAM 1204 12110047 EP1C8 144 TQFP PRECON 3-HAST 77 96 0 0.13µ SRAM 1219 12080001 EPC1 20PLCC PRECON 3-HAST 45 96 0 0.5µ EEPROM 1230 12020014 EP20K100E 240 PQFP PRECON 3-HAST 25 96 0 0.18µ SRAM 1125 12030027 EP2C5Y90 208 PQFP PRECON 3-HAST 30 192 0 0.09µ SRAM 1210 12040033 EP2C5Y91 256 FBGA PRECON 3-HAST 78 192 0 0.09µ SRAM 1207 47 REL LOT # DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS STRESS HOURS 12050012 EP2C5Y92 256 FBGA PRECON 3-HAST 78 192 12030026 EP2C8 144 TQFP PRECON 3-HAST 56 192 12030050 EP2C8 208 PQFP PRECON 3-HAST 30 12040001 EP2C8 144 TQFP PRECON 3-HAST 12080006 EP2C8 144 TQFP 13010011 EP2C8 12080037 # FAIL TECHNOLOGY DATE CODE 0 0.09µ SRAM 1207 0 0.09µ SRAM 1201 192 0 0.09µ SRAM 1213 40 96 0 0.09µ SRAM 1207 PRECON 3-HAST 77 192 0 0.09µ SRAM 1225 256 FBGA PRECON 3-HAST 30 192 0 0.09µ SRAM 1243 EP2C20 240PQFP PRECON 3-HAST 77 192 0 0.09µ SRAM 1231 12110006 EP2C20 256 FBGA PRECON 3-HAST 77 192 0 0.09µ SRAM 1243 12120018 EP2C20 240 PQFP PRECON 3-HAST 77 96 0 0.09µ SRAM 1243 12030019 EPC1441 20 PLCC PRECON 3-HAST 45 96 0 0.5µ EPROM 1207 12100009 EPC16 88 UBGA PRECON 3-HAST 45 96 0 0.35µ FLASH 1231 12020028 EPC2 20 PLCC PRECON 3-HAST 45 96 0 0.4µ FLASH 1204 12030028 EPF10K100E 208 PQFP PRECON 3-HAST 25 96 0 0.22µ SRAM 1143 12030020 EPF10K50 356 BGA PRECON 3-HAST 25 96 0 0.3µ SRAM 1201 12090012 EPF10K70 240 RQFP PRECON 3-HAST 25 96 0 0.42µ SRAM 1231 12090021 EPF6016 208 PQFP PRECON 3-HAST 25 96 0 0.42µ SRAM 1225 12030003 EPM240 100 TQFP PRECON 3-HAST 48 192 0 0.18µ FLASH 1207 12020024 EPM570 144 TQFP PRECON 3-HAST 77 192 0 0.18µ FLASH 1201 12090007 EPM570 144 TQFP PRECON 3-HAST 120 96 0 0.18µ FLASH 1237 12030039 EPM1270 256 FBGA PRECON 3-HAST 56 192 0 0.18µ FLASH 1203 12040032 EPM1270 144 TQFP PRECON 3-HAST 77 192 0 0.18µ FLASH 1213 12080031 EPM1270 256 FBGA PRECON 3-HAST 77 96 0 0.18µ FLASH 1219 12110027 EPM1270 144 TQFP PRECON 3-HAST 77 192 0 0.18µ FLASH 1245 12010017 EPM2210G 256 FBGA PRECON 3-HAST 77 192 0 0.18µ FLASH 1201 12040036 EPM2210 256 FBGA PRECON 3-HAST 76 96 0 0.18µ FLASH 1207 12080009 EPM7064AE 100TQFP PRECON 3-HAST 45 96 0 0.35µ EEPROM 1230 12110039 EPM7064S 44 TQFP PRECON 3-HAST 45 96 0 0.5µ EEPROM 1237 12060013 EPM7256B 256 FBGA PRECON 3-HAST 25 96 0 0.22µ EEPROM 1207 12040011 EPM7512AE 208 PQFP PRECON 3-HAST 25 96 0 0.35µ EEPROM 1207 48 Temperature Cycling Reference: JESD22-A104C (JEDEC Standard) All lots are subjected to T/C B after being preconditioned to JEDEC standard moisture sensitivity level (MSL) and subjected to a 3X reflow. Stress can be pushed up to 2000 cycles. Temperature Cycling Results REL LOT # 14100005 14100023 14100026 14100027 14100037 15010011 15010015 15010016 15010017 15020012 15020015 15030005 15030006 15030007 15030033 15030037 15040017 15040034 DEVICE EP2S130 EP1S40Z EP4SGX230 EP4SGX230 EPM7256B EP2AGX65 EP2C5 EPC16 EP2AGX65 5SX9E EP2AGX65 EP2C35 EPM1270 EPM1270 EP4CGX150 EP4SGX230 EPM7256A EP3SL200 PACKAGE TYPE 1508 FBGA 1020 FBGA 1517 FBGA 1517 FBGA 256 FBGA 358 UBGA 256 FBGA 88 UBGA 358 UBGA 1517 SHBGA 358 UBGA 672 FBGA 256 FBGA 144 TQFP 896 FBGA 1517 FBGA 256 FBGA 1152 FBGA PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B PRECON 3-TEMP CYC B # UNITS 30 25 25 25 25 30 30 45 30 25 30 30 30 30 30 25 25 25 # OF CYCLES 1000 1000 1000 1000 1000 2000 1000 1000 2000 700 2000 1000 1000 1000 1000 1000 1000 1000 RELIABILITY TEST # FAIL 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 60nm SRAM 40 nm SRAM 0.35μ EEPROM 65nm SRAM DATE CODE 1437 1413 1437 1437 1437 1447 1437 1443 1447 1502 1447 1437 1501 1501 1507 1507 1513 1513 TECHNOLOGY 0.09µ SRAM 0.13μ SRAM 40 nm SRAM 40 nm SRAM 0.35μ EEPROM 40nm SRAM 0.09µ SRAM 0.35 FLASH 40nm SRAM 28nm SRAM 40nm SRAM 0.09µ SRAM 0.18μ FLASH 0.18μ FLASH 14020037 EP2C8 144 TQFP PRECON 3-TEMP CYC B 30 1000 0 0.09µ SRAM 1401 14020051 EPM1270 256 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.18μ FLASH 1401 14020057 EP3SL200 1152 FBGA PRECON 3-TEMP CYC B 25 1000 0 65nm SRAM 1325 14030022 EPC2 20 PLCC PRECON 3-TEMP CYC B 45 1000 0 0.35μm FLASH 1407 14030023 EPM7512AE 208 PQFP PRECON 3-TEMP CYC B 25 1000 0 0.35μ EEPROM 1401 14030025 EP2S30 672 FBGA PRECON 3-TEMP CYC B 25 1000 0 0.09µ SRAM 1407 14030029 EPM1270 144 TQFP PRECON 3-TEMP CYC B 30 1000 0 0.18μ FLASH 1407 14040010 EP4CGX150 896 FBGA PRECON 3-TEMP CYC B 30 1000 0 60nm SRAM 1407 14040011 EPF10K50 356 SBGA PRECON 3-TEMP CYC B 25 1000 0 0.3μ SRAM 1407 14040046 EPC16 88 UBGA PRECON 3-TEMP CYC B 45 1000 0 0.35 FLASH 1407 14040048 EPF10K100 208 PQFP PRECON 3-TEMP CYC B 25 1000 0 0.22μ SRAM 1407 14050018 5AGTD7 1152 FBGA PRECON 3-TEMP CYC B 25 1000 0 28nm SRAM 1420 14050029 EP2C8 208 PQFP PRECON 3-TEMP CYC B 30 1000 0 0.09µ SRAM 1413 14050030 5SGXA7 1517 FBGA PRECON 3-TEMP CYC B 25 1000 0 28nm SRAM 1421 14060020 EP3C40 324 FBGA PRECON 3-TEMP CYC B 15 1000 0 60nm SRAM 1419 14070004 EP20K400 672 FBGA PRECON 3-TEMP CYC B 25 1000 0 0.15μ SRAM 1419 14070005 EP3SL150 1152 FBGA PRECON 3-TEMP CYC B 25 1000 0 65nm SRAM 1419 14070012 EPM570Z 144 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.18μ FLASH 1425 14070047 EPM7064S 44 TQFP PRECON 3-TEMP CYC B 45 1000 0 0.5μ EEPROM 1419 14070049 EP3C120 484 FBGA PRECON 3-TEMP CYC B 30 1000 0 60nm SRAM 1407 14080001 EPM570 256 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.18μ FLASH 1419 14080002 EPM2210 324 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.18μ FLASH 1337 14080004 5CGXC9 896 FBGA PRECON 3-TEMP CYC B 30 1000 0 28nm SRAM 1428 14080012 EP2C35 672 FBGA PRECON 3-TEMP CYC B 15 1000 0 0.09µ SRAM 1431 14080014 EP2AGX125 780 FBGA PRECON 3-TEMP CYC B 25 1000 0 40nm SRAM 1433 14100021 EPM570Z 144 TQFP PRECON 3-TEMP CYC B 30 1000 0 0.18μ FLASH 1437 13090029 5AGTD7 1152 FBGA PRECON 3-TEMP CYC B 25 1000 0 28 nm SRAM 1320 13100001 5AGTD7 1152 FBGA PRECON 3-TEMP CYC B 34 2000 0 28 nm SRAM 1339 49 REL LOT DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS # OF CYCLES TECHNOLOGY DATE CODE 13100007 5AGTD7 1152 FBGA PRECON 3-TEMP CYC B 34 1600 13100009 5SGXA7 1517 FBGA PRECON 3-TEMP CYC B 25 1000 0 28 nm SRAM 1340 0 28 nm SRAM 13100011 EP4SGX230 1517 FBGA PRECON 3-TEMP CYC B 25 1336 1000 0 40 nm SRAM 13100014 EPM570Z 144 TQFP PRECON 3-TEMP CYC B 1337 30 1000 0 0.18μ FLASH 13120041 EP4SGX230 1517 FBGA 1331 PRECON 3-TEMP CYC B 30 2000 0 40 nm SRAM 14020019 5SGXA7 1349 1517 FBGA PRECON 3-TEMP CYC B 25 1123 0 28 nm SRAM 14020041 1406 EP20K600 652 TBGA PRECON 3-TEMP CYC B 30 1500 0 0.22µ SRAM 1408 14030011 5AGTD7 1932 FBGA PRECON 3-TEMP CYC B 24 2000 0 28 nm SRAM 1411 13010054 EPC1S 20 PLCC PRECON 3-TEMP CYC B 45 1000 0 0.5μ EPROM 1249 13010060 EP3SL200 1152 FBGA-FC PRECON 3-TEMP CYC B 25 1000 0 65nm SRAM 1237 13010061 EP2C70 672 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.09μ SRAM 1243 13020080 EPC2 20 PLCC PRECON 3-TEMP CYC B 45 1000 0 0.4μ FLASH 1301 13020083 EPM7512A 208 PQFP PRECON 3-TEMP CYC B 25 1000 0 0.35μ EEPROM 1301 13030014 EPF10K50A 356 SBGA PRECON 3-TEMP CYC B 25 1000 0 0.3μ SRAM 1243 13030016 EP1S40 1020 FBGA-FC PRECON 3-TEMP CYC B 25 1000 0 0.13μ SRAM 1307 13030019 EPM2210 100 PQFP PRECON 3-TEMP CYC B 30 2000 0 0.18μ FLASH 1313 13030062 EPF10K100E 208 PQFP PRECON 3-TEMP CYC B 25 1000 0 0.22μ SRAM 1307 13040002 EP4SGX530 1517 HBGA-FC PRECON 3-TEMP CYC B 25 1000 0 40nm SRAM 1231 13040006 EP2AGX260 1152 FBGA-FC PRECON 3-TEMP CYC B 25 1000 0 40nm SRAM 1307 13040011 EP3C120 780 FBGA PRECON 3-TEMP CYC B 30 1000 0 60 nm SRAM 1307 13040041 EP2S90 1508 FBGA-FC PRECON 3-TEMP CYC B 25 1000 0 0.09μ SRAM 1313 13040044 EPM1270 144 TQFP PRECON 3-TEMP CYC B 30 1000 0 0.18μ FLASH 1307 13040053 5CGXC9 1152 FBGA-FC PRECON 3-TEMP CYC B 30 1000 0 28 nm SRAM 1225 13040057 EP2C70 896 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.09μ SRAM 1324 13050006 5SX9E 1517 HBGA-FC PRECON 4-TEMP CYC B 25 2000 0 28 nm SRAM 1319 13050011 5AGTD7 1152 FBGA PRECON 3-TEMP CYC B 25 1000 0 28 nm SRAM 1320 13050018 EP20K400C 672 FBGA-FC PRECON 3-TEMP CYC B 25 1000 0 0.15μ SRAM 1313 13060020 EP2S90 1020 FBGA-FC PRECON 3-TEMP CYC B 25 1000 0 0.09μ SRAM 1319 13060021 EPM7064S 44 TQFP PRECON 3-TEMP CYC B 45 1000 0 0.5μ EEPROM 1319 13060022 EPM2210 256 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.18μ FLASH 1319 13060024 EPC1S 20 PLCC PRECON 3-TEMP CYC B 45 1000 0 0.5μ EPROM 1319 13060035 EP1C4 400 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.13μ SRAM 1324 13070005 EPC16 88 UBGA PRECON 3-TEMP CYC B 30 1000 0 0.35μ FLASH 1319 13070009 EP3C25 240 PQFP PRECON 3-TEMP CYC B 30 1000 0 60 nm SRAM 1325 13070017 EPF10K70 240 RQFP PRECON 3-TEMP CYC B 25 1000 0 0.42μ SRAM 1318 13070022 EP3SL150 1152 FBGA-FC PRECON 3-TEMP CYC B 25 1000 0 65 nm SRAM 1325 13070024 EPM570 256 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.18μ FLASH 1319 13080009 EP3C16 484 UBGA PRECON 3-TEMP CYC B 30 1000 0 60 nm SRAM 1325 13080023 EP2C5 256 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.09μ SRAM 1331 13090007 EP2C35 672 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.09μ SRAM 1331 13090015 EP2S130 1508 FBGA-FC PRECON 3-TEMP CYC B 25 1000 0 0.09μ SRAM 1331 13100011 EP4SGX230 1517 FBGA-FC PRECON 3-TEMP CYC B 25 1000 0 40nm SRAM 1337 12100008 5AGTD7 1517 FBGA PRECON 3-TEMP CYC B 30 2000 0 28 nm SRAM 1235 12100025 5AGTD7 1152 FBGA PRECON 3-TEMP CYC B 30 2000 0 28 nm SRAM 1236 12040021 5CGXC7 896FBGA PRECON 3-TEMP CYC B 30 1000 0 28 nm SRAM 1205 12040031 5CGXC7 896FBGA PRECON 3-TEMP CYC B 30 1000 0 28 nm SRAM 1205 12060017 5CGXC7 896FBGA PRECON 3-TEMP CYC B 45 1000 0 28 nm SRAM 1206 12060035 5CGXC7 896FBGA PRECON 3-TEMP CYC B 45 1000 0 28 nm SRAM 1225 12080012 5CGXC7 896FBGA PRECON 3-TEMP CYC B 45 1000 0 28 nm SRAM 1206 12080030 5CGXC7 896FBGA PRECON 3-TEMP CYC B 45 1000 0 28 nm SRAM 1233 12100003 5CGXC9 1152 FBGA PRECON 3-TEMP CYC B 30 1000 0 28 nm SRAM 1225 12100027 5CGXC7 896FBGA PRECON 3-TEMP CYC B 45 1000 0 28 nm SRAM 1206 12100030 5CGXC9 1152 FBGA PRECON 3-TEMP CYC B 30 1000 0 28 nm SRAM 1225 12100032 5CGXC9 896 FBGA PRECON 3-TEMP CYC B 25 1000 0 28 nm SRAM 1205 # # FAIL 50 REL LOT DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS # OF CYCLES TECHNOLOGY DATE CODE 12110040 5CGXC9 1152 FBGA PRECON 3-TEMP CYC B 45 1000 12110042 5CGXC7 896 FBGA PRECON 3-TEMP CYC B 30 1000 0 28 nm SRAM 1225 0 28 nm SRAM 12020024 5M240Z 144 TQFP PRECON 3-TEMP CYC B 77 1206 1000 0 0.18μ FLASH 12010017 5M2210Z 256 FBGA PRECON 3-TEMP CYC B 1201 77 1000 0 0.18μ FLASH 12020026 5SGXA7 1760 FBGA 1201 PRECON 4-TEMP CYC B 29 1000 0 28 nm SRAM 12030021 5SGXA7 1202 1517 FBGA PRECON 4-TEMP CYC B 50 1000 0 28 nm SRAM 12050021 1202 5SGXA7 1517 FBGA PRECON 4-TEMP CYC B 30 2000 0 28 nm SRAM 1205 13010053 5SGXA9 1517 FBGA PRECON 4-TEMP CYC B 30 2000 0 28 nm SRAM 1301 12030029 5SGXB6 1760 FBGA PRECON 4-TEMP CYC B 25 1000 0 28 nm SRAM 1203 12090027 5SGXAB 1932 FBGA PRECON 4-TEMP CYC B 30 2000 0 28 nm SRAM 1209 12110034 5SGXAB 1932 FBGA PRECON 4-TEMP CYC B 30 2000 0 28 nm SRAM 1211 12040014 EP1C4 400 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.13µ SRAM 1204 12110047 EP1C6 144 TQFP PRECON 3-TEMP CYC B 77 1000 0 0.13µ SRAM 1219 12010023 EP1S40 1508 FBGA PRECON 3-TEMP CYC B 25 1000 0 0.13µ SRAM 1149 12020014 EP20K100E 240 PQFP PRECON 3-TEMP CYC B 25 1000 0 0.18µ SRAM 1125 12050013 EP20K100 356 BGA PRECON 3-TEMP CYC B 25 1000 0 0.18µ SRAM 1213 12110011 EP20K160E 356 BGA PRECON 3-TEMP CYC B 25 1000 0 0.18µ SRAM 1237 12090013 EP20K300E 672 FBGA PRECON 3-TEMP CYC B 30 1000 0 0.18µ SRAM 1231 12070008 EP20K400C 672 FBGA PRECON 3-TEMP CYC B 25 1000 0 0.15µ SRAM 1201 12120017 EP2AGX125 1152 FBGA PRECON 3-TEMP CYC B 25 1000 0 40 nm SRAM 1237 12050039 EP2AGX260 1152 FBGA PRECON 3-TEMP CYC B 25 1000 0 40 nm SRAM 1205 12030050 EP2C8 208 PQFP PRECON 3-TEMP CYC B 80 1000 0 0.09µ SRAM 1213 12080006 EP2C8 144TQFP PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1225 12100012 EP2C8 208 PQFP PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1231 12080037 EP2C20 240 PQFP PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1231 12110006 EP2C20 256 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1243 12120018 EP2C20 240 PQFP PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1243 12030025 EP2C70 672 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1207 12040022 EP2C70 672 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1207 12030025 EP2C70 672 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1207 12050035 EP2C70 672 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1207 12070001 EP2C70 672 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1207 12090011 EP2C70 672 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.09µ SRAM 1219 12040010 EP2S90 1508 FBGA PRECON 3-TEMP CYC B 25 1000 0 0.09µ SRAM 1207 12090020 EP2S90 1508 FBGA PRECON 3-TEMP CYC B 25 1000 0 0.09µ SRAM 1213 12110012 EP3C25 144 EQFP PRECON 3-TEMP CYC B 77 1000 0 60 nm SRAM 1237 12040030 EP3C120 780 FBGA PRECON 3-TEMP CYC B 77 1000 0 60 nm SRAM 1213 12060015 EP3C120 780 FBGA PRECON 3-TEMP CYC B 77 1000 0 60 nm SRAM 1222 12040011 EP3C120 780 FBGA PRECON 3-TEMP CYC B 24 2000 0 60 nm SRAM 1214 12100005 EP3SE50 780 FBGA PRECON 3-TEMP CYC B 25 1000 0 65 nm SRAM 1237 12070022 EP3SL150 1152 FBGA PRECON 3-TEMP CYC B 25 1000 0 65 nm SRAM 1225 12010021 EP3SL200 1152 FBGA PRECON 3-TEMP CYC B 25 1000 0 65 nm SRAM 1146 j12080036 EP4CGX15 148 QFN PRECON 3-TEMP CYC B 77 1000 0 60 nm SRAM 1231 12020033 EP4CGX150 896 FBGA PRECON 3-TEMP CYC B 77 1000 0 60 nm SRAM 1201 12080033 EP4SGX230 1517 FBGA PRECON 3-TEMP CYC B 25 1000 0 40 nm SRAM 1208 12050041 EP4SGX530 1517HBGA PRECON 3-TEMP CYC B 25 1000 0 40 nm SRAM 1205 12080001 EPC1 20 PLCC PRECON 3-TEMP CYC B 45 1000 0 0.5µ EPROM 1230 12030019 EPC1441 20 PLCC PRECON 3-TEMP CYC B 45 1000 0 0.5µ EPROM 1207 12020028 EPC2 20 PLCC PRECON 3-TEMP CYC B 45 1000 0 0.4m FLASH 1204 12100009 EPC16 88 UBGA PRECON 3-TEMP CYC B 45 1000 0 0.35m FLASH 1231 12030020 EPF10K50A 356 FBGA PRECON 3-TEMP CYC B 25 1000 0 0.3µ SRAM 1201 12090012 EPF10K70 240 RQFP PRECON 3-TEMP CYC B 25 1000 0 0.42µ SRAM 1231 12030028 EPF10K100E 208 PQFP PRECON 3-TEMP CYC B 25 1000 0 0.22µ SRAM 1143 12090021 EPF6016 208 PQFP PRECON 3-TEMP CYC B 25 1000 0 0.42µ SRAM 1225 # # FAIL 51 REL LOT DEVICE PACKAGE TYPE RELIABILITY TEST # UNITS # OF CYCLES TECHNOLOGY DATE CODE 12120006 EPM240 100 MBGA PRECON 3-TEMP CYC B 77 1000 12020024 EPM570 144 TQFP PRECON 3-TEMP CYC B 77 1000 0 0.18μ FLASH 1243 0 0.18μ FLASH 12030039 EPM1270 256 FBGA PRECON 3-TEMP CYC B 77 1201 1000 0 0.18μ FLASH 12080031 EPM1270 256 FBGA PRECON 3-TEMP CYC B 1203 77 1000 0 0.18μ FLASH 12040032 EPM1270 144 TQFP 1219 PRECON 3-TEMP CYC B 77 1000 0 0.18μ FLASH 12110027 EPM1270 1213 144 TQFP PRECON 3-TEMP CYC B 77 1000 0 0.18μ FLASH 12010017 1245 EPM2210 256 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.18µ FLASH 1201 12050002 EPM2210 324 FBGA PRECON 3-TEMP CYC B 77 1000 0 0.18µ FLASH 1111 12060014 EPM2210 256 FBGA PRECON 3-TEMP CYC B 80 1000 0 0.18µ FLASH 1207 12080009 EPM7064AE 100TQFP PRECON 3-TEMP CYC B 45 1000 0 0.35µ EEPROM 1230 12110039 EPM7064S 44 TQFP PRECON 3-TEMP CYC B 45 1000 0 0.5µ EEPROM 1237 12060013 EPM7256B 256 FBGA PRECON 3-TEMP CYC B 25 1000 0 0.22µ EEPROM 1207 12040011 EPM7512AE 208 PQFP PRECON 3-TEMP CYC B 25 1000 0 0.35µ EEPROM 1207 # # FAIL 52 PowerSoC Device Package Stress All packages are QFN, DFN types in different sizes. High Temperature Storage 53 Unbiased HAST / Autoclave All lots are subjected to Unbiased HAST or Autoclave test after being preconditioned to JEDEC standard moisture sensitivity level (MSL) and subjected to a 3X reflow. 54 Temperature Humidity Test All lots are subjected to Biased Humidity test after being preconditioned to JEDEC standard moisture sensitivity level (MSL) and subjected to a 3X reflow. 55 Temperature Cycling: (Conditions C: –65°C to +150°C 500 cycles) All lots are subjected to T/C after being preconditioned to JEDEC standard moisture sensitivity level (MSL) and subjected to a 3X reflow. 56 Solder Joint Reliability Reference: IPC9701 Solder Joint Reliability is measured by temperature cycling devices on a printed circuit board from 0°C to 100°C. The number of cycle can go to up to 6000 cycles to detect first fail. Tin-Lead (Sn-Pb) Solder Ball PACKAGES SUBSTRATE PAD SIZE PITCH TECHNOLOGY HEAT SINK DIE SIZE (mm) MTTF (Cycles) CYCLES TO 0.1% FAILS (Extrapolated) M301 0.30mm 0.5mm Cu-pillar + Flip Chip 4 Layer BT None 11x11 0 fails to 5000 0 fails to 5000 U88 0.4 mm 0.8 mm Wire-bonded Stacked Die + 2L FR4 substrate None 6.9 * 4.6 4068 3162 E144 NA 0.5mm lead frame + ground pad None 5.12 * 5.21 0 fail to 6000 0 fails to 6000 QFN148 NA 0.5mm lead frame + ground pad None 5.12 * 5.21 2839 2119 F256 0.45mm 1.0mm low k die + Wire Bond + 4 Layer BT None 5.80*6.22 4798 3775 F256 0.45mm 1.0mm low k die + Wire Bond + 4 Layer BT None 5.80*6.22 5058 3236 F256 0.45mm 1.0mm low k die + Wire Bond + 4 Layer BT None 5.80*6.22 4194 2161 F256 0.45 mm 1.0 mm Wire Bond + 2 Layer BT None 8.8 * 7.9 4437 3687 F256 thin outline 0.45 mm 1.0 mm low k die + Wire Bond + 4 Layer BT None 7.68 * 6.81 3574 2888 F256 0.45mm 1.0mm Wire bond + 2Layer BT None 5.46 x 5.85 4437 3713 B356 0.58 mm 1.27 mm Wire Bond + 2 Layer BT None 9 * 9.8 0 fail to 5000 0 fails to 5000 U358 0.4mm 0.8mm Lid-less Flip-Chip + 4L build up BT None 10.11*10 2777 2740 U484 0.4mm 0.8mm low k die + Wire Bond + 4 Layer BT None 8.4 * 8.03 0 fail to 5000 0 fails to 5000 B652 0.58 mm 1.27 mm Wire bond + 1 Layer Tape Cu 17.01 * 15.38 0 fail to 5000 0 fails to 5000 B724 0.55 mm 1.27 mm Flip Chip + 6 layer build-up BT 2 pc Cu 18.1 * 13.4 0 fail to 2800 0 fails to 2800 F484 0.45 mm 1.0 mm Wire bond + 2 layer BT None 11.5 * 11.5 6534 3408 F672 0.45 mm 1.0 mm Wire Bond + 4 Layer BT None 11.19*11.12 5601 4448 F672 0.45 mm 1.0 mm Wire Bond + 4 Layer BT None 16 * 11.8 0 fail at 5200 0 fails at 5200 F672 0.45 mm 1.0 mm Wire Bond + 4 Layer BT None 16 * 11.8 0 fail at 5400 0 fails at 5400 F672 0.45mm 1.0mm Low K die + Wire Bond + 4 Layer BT None 8.4 * 8.03 0 fail to 5400 0 fails to 5400 F672 0.55 mm 1.0 mm Flip Chip + 8 layer build-up BT AlSiC 19.1 * 16.5 4419 3284 57 PACKAGES SUBSTRATE PAD SIZE PITCH TECHNOLOGY HEAT SINK DIE SIZE (mm) MTTF (Cycles) CYCLES TO 0.1% FAILS (Extrapolated) F672 0.55 mm 1.0 mm Flip Chip + 8 layer build-up BT AlSiC 19.1 * 16.5 0 fail to 5700 0 fails to 5700 F672 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT AlSiC 16.5 * 13.1 5304 3437 F672 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT AlSiC 16.5 * 13.1 4130 3487 F672 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT AlSiC 16.5 * 13.1 0 fail to 5100 0 fails to 5100 F672 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 16.5 * 13.1 0 fail to 5400 0 fails to 5400 F780 0.45mm 1.0mm Wire bond + 4Layer BT None 10.7 5* 11.62 5087 3413 F780 0.45mm 1.0mm Wire bond + 2Layer BT None 10.7 5* 11.62 5318 4380 F780 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 16.3 * 13.5 5890 4614 F780 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 16.3 * 13.5 0 fail to 4500 0 fails to 4500 F896 0.45mm 1.0 mm Wire bonded + 4 layer BT None 8.86 * 9.96 0 fail to 4000 0 fails to 4000 F896 0.45mm 1.0 mm Wire bonded + 4 layer BT None 11.19*11.12 5148 3080 F1020 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT AlSiC 22.6 * 19.9 0 fail to 6000 0 fails to 6000 F1020 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT AlSiC 22.6 * 19.9 8897 5670 F896 0.45 mm 1mm Wire Bond + 2 Layer BT None 13.16 X 12.39mm 3911 2927 F896 0.45mm 1.0mm N20 triple row staggered Wire bond + 2Layer BT None 10.9 X 10.5 (N28 ELK die) 4512 3307 F896 0.45mm 1.0mm WB+ 2 layer BT + OSP surface finish None 13.16 X 12.39 0 fail to 3500 0 fails to 3500 F1020 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 22.1 * 19.4 5781 5174 F1020 0.55mm 1.0mm Low k Die + Flip Chip + 8 layer BT build-up 2 pc Cu 15.33 * 14.24 5432 4510 F1020 0.55mm 1.0mm Low k Die + Flip Chip + 8 layer BT build-up 2 pc Cu 15.33 * 14.24 4333 3705 F1020 0.55mm 1.0mm Low k Die + Flip Chip + 8 layer BT build-up 2 pc Cu 22.56 * 25.54 5579 4603 F1020 0.55mm 1.0mm Flip Chip + 8 layer BT build-up 2 pc Cu 22.6X19.9 0 fail to 4000 0 fails to 4000 F1020 0.55 mm 1.0 mm Lidless Flip Chip + 6 layer build-up BT None 17.62*15.94 4804 3104 F1020 0.55 mm 1.0 mm Lidless Flip Chip + 6 layer build-up BT None 18.03*17.29 4551 3168 F1152 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 16*14 4106 3216 F1152 0.55 mm 1.0 mm Lidless Flip Chip + 6 layer build-up BT None 16*14 4421 3474 F1508 0.55mm 1.0mm Low k Die + Flip Chip + 8 layer BT build-up SPL 22.17 * 19.24 6506 3651 58 PACKAGES SUBSTRATE PAD SIZE PITCH TECHNOLOGY HEAT SINK DIE SIZE (mm) MTTF (Cycles) CYCLES TO 0.1% FAILS (Extrapolated) F1508 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 23.9 * 23.3 4233 2694 F1508 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 23.9 * 23.3 3074 2040 F1508 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT SPL 23.9 * 23.3 4797 3182 F1517 0.55 mm 1.0 mm Flip Chip + 14 layer build-up BT 2 pc Cu 25.6 * 26.5 (N40 ELK die) 4497 3564 F1517 0.55 mm 1.0 mm Flip Chip + 14 layer build-up BT SPL 25.6 * 26.5 (N40 ELK die) 4733 4100 F1681 0.55 mm 1.0 mm Flip Chip + 8 layer build-up BT SPL 18 * 22 (N40 ELK die) 0 fail to 4890 0 fail to 4890 F1681 0.55 mm 1.0 mm Molded Flip Chip + 8 layer build-up BT None 18 * 22 (N40 ELK die) 3656 2958 F1760 0.55 mm 1.0 mm Flip Chip + 12 layer build-up BT 2 pc Cu 3541 2572 F1760 0.55 mm 1.0 mm Flip Chip + 8 layer build-up BT SPL 3703 3296 F1932 0.55 mm 1.0 mm Flip Chip + 8 layer build-up BT 2 pc Cu 3552 2932 F1932 0.55 mm 1.0 mm Flip Chip + 8 layer build-up BT 1mm FTSPL 31x26 4021 3136 20.0 * 20.0 (N40 ELK die) 25.5 * 26.5 (N28 ELK die) 25.6 * 26.5 (N28 ELK die) Lead Free Solder Ball PACKAGES SUBSTRATE PAD SIZE PITCH TECHNOLOGY HEAT SINK DIE SIZE (mm) MTTF (Cycles) CYCLES TO 0.1% FAILS (Extrapolated) M301 0.30mm 0.5mm Cu-pillar + Flip Chip 4 Layer BT None 11x11 0 fails to 6000 0 fails to 6000 F1932 0.55 mm 1.0 mm Flip Chip + 12 layer build-up BT (RoHS6 - Compliant) FTSPL 25 * 26 (N20 ELK die) 0 fail to 6000 0 fail to 6000 M100 0.3 mm 0.5 mm Wire Bond + 2 Layer BT None 3.2 * 3.2 0 fail to 6000 0 fail to 6000 M256 0.3 mm 0.5 mm Wire Bond + 4 Layer BT None 3.9 * 3.9 0 fail to 6000 0 fail to 6000 U88 0.4 mm 0.8 mm Wire-bonded Stacked Die + 2L FR4 substrate None 6.9 * 4.6 0 fail to 6000 0 fail to 6000 T144 N/A 0.5 mm lead frame N/A 4.9*6.0 0 fail to 5500 0 fail to 5500 E144 NA 0.5mm lead frame + ground pad None 5.12 * 5.21 0 fail to 6000 0 fail to 6000 QFN148 NA 0.5mm lead frame + ground pad None 5.12 * 5.21 2938 2511 F256 thin outline 0.45 mm 1.0 mm Wire Bond + 4 Layer BT None 7.68 * 6.81 0 fail to 5000 0 fail to 5000 F256 0.45mm 1.0mm low k die + Wire Bond + 4 Layer BT None 5.80*6.22 0 fail to 6000 0 fail to 6000 F256 0.45mm 1.0mm Wire bond + 2Layer BT None 5.46 x 5.85 0 fail to 6000 0 fail to 6000 Q240 N/A 0.5 mm lead frame N/A 8.0*7.9 0 fail to 6000 0 fails to 6000 59 PACKAGES SUBSTRATE PAD SIZE PITCH TECHNOLOGY HEAT SINK DIE SIZE (mm) MTTF (Cycles) CYCLES TO 0.1% FAILS (Extrapolated) U358 0.4mm 0.8mm Lid-less Flip-Chip + 4 Layer build up BT None 10.11*10 0 fail to 6000 0 fails to 6000 U484 0.4mm 0.8mm low k die + Wire Bond + 4 Layer BT None 8.4 * 8.03 0 fail to 3500 0 fail to 3500 F484 0.45mm 1.0 mm Wire-bonded + 4 layer BT None 10.8 * 8.8 0 fail to 6000 0 fail to 6000 F672 0.45 mm 1.0 mm Wire Bond + 4 Layer BT None 11.19*11.12 0 fail to 6000 0 fail to 6000 F780 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 16.3 * 13.5 0 fail to 5000 0 fail to 5000 F896 0.45mm 1.0 mm Wire-bonded + 4 layer BT None 8.86 * 9.96 0 fail to 4000 0 fail to 4000 F896 0.45mm 1.0 mm Wire bonded + 4 layer BT None 11.19*11.12 0 fail to 6000 0 fail to 6000 F896 0.45mm 1.0mm N20 triple row staggered Wire bond + 2Layer BT None 10.9 X 10.5 (N28 ELK) 0 fail to 6000 0 fail to 6000 M1019 0.3mm 0.5mm Lid-less Flip-Chip + 3-2-3 build up substrate None 10.16*10.52 0 fail to 6000 0 fail to 6000 F1020 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 22.6 * 19.9 0 fail to 5887 0 fail to 5887 F1020 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT SPL 17.62*15.94 0 fail to 6000 0 fail to 6000 F1020 0.55 mm 1.0 mm Lidless Flip Chip + 6 layer build-up BT None 17.62*15.94 0 fail to 6000 0 fail to 6000 F1020 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT SPL 18.03*17.29 0 fail to 6000 0 fail to 6000 F1020 0.55 mm 1.0 mm Lidless Flip Chip + 6 layer build-up BT None 18.03*17.29 0 fail to 6000 0 fail to 6000 F1152 0.45mm 1.0mm Wire bonded + 4 layer BT None 13.2*13.53 0 fail to 4800 0 fail to 4800 F1508 0.55 mm 1.0 mm Flip Chip + 6 layer build-up BT 2 pc Cu 23.9 * 23.3 0 fail to 6000 0 fail to 6000 F1681 0.55 mm 1.0 mm Molded Flip Chip + 8 layer build-up BT None 18 * 22 (N40 ELK die) 0 fail to 7000 0 fail to 7000 F1760 0.55 mm 1.0 mm Flip Chip + 8 layer build-up BT SPL 25 * 26 (N28 ELK die) 0 fail to 7000 0 fail to 7000 F1932 0.55 mm 1.0mm Flip Chip + 8 layer build-up BT 1 mm FTSPL 31*26 0 fail to 7000 0 fail to 7000 F1932 0.55 mm 1.0 mm Flip Chip + 8 layer build-up BT SPL 25 * 26 (N28 ELK die) 0 fail to 6000 0 fail to 6000 60 Configuration Devices Description Serial Configuration Devices The EPCS1 serial configuration device is fabricated on Micron 0.15 μm. CMOS process technology. The EPCS4, EPCS16 and EPCS64 serial configuration devices are fabricated on Micron 0.11 μm CMOS process technology. The EPCS128 device is fabricated on Micron 65nm CMOS process technology. These products operate at a nominal Vcc of 3.3V. The EPCS1, EPCS4 and EPCS16 devices are available in the 8-pins small outline integrated circuit (SOIC) package. The EPCS64 and EPCS128 are available in the 16-pins SOIC package. Quad-Serial Configuration Devices The EPCQ16, EPCQ32, EPCQ64, EPCQ128, EPCQ256 and EPCQ512 quad- serial configuration devices are fabricated on Micron 65 nm CMOS process technology. These products operate at a nominal Vcc of 3.3V. The EPCQ16 and EPCQ32 are available in the 8-pin small outline integrated circuit (SOIC) package while EPCQ64, EPCQ128 and EPCQ256 are available in 16-pin SOIC package. Low Power Quad-Serial Configuration Devices The EPCQ-L256, EPCQ-L512 and EPCQ-L1024 quad- serial configuration devices are fabricated on Micron Low Power 65 nm CMOS process technology. These products operate at a nominal Vcc of 1.8V. The EPCQ-L256, EPCQ-L512 and EPCQ-L1024 are available in FBGA 24 pins package 61 Reliability Results 0.15 μm process – Monitoring Results TEST PROCEDURE TEST CONDITIONS LOT1 LOT2 LOT3 High Temperature Operating Life 140°C, 4.2V 504hrs 1008hrs 0/80 0/80 0/77 0/77 0/80 0/80 Low Temperature Operating Life –40°C, 4.2V 504hrs 0/80 0/77 0/80 200°C, 500hrs 1000hrs 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 >2000V >2000V >2000V Pass Pass Pass High Temperature Bake Erase/Write Cycles and Bake 10,000 E/W cycles + Bake 200°C, 48hrs 100,000 E/W cycles + Bake 200°C, 48hrs Electrostatic Discharge Human body model: 1.5kΩ, 100pF Latch-up Class II - Level A (at 85°C) 0.11 μm process – Monitoring Results TEST PROCEDURE TEST CONDITIONS LOT1 LOT2 LOT3 High Temperature Operating Life 140°C, 4.2V 168 hrs 500 hrs 1000 hrs 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 Low Temperature Operating Life –40°C, 4.2V 168 hrs 0/15 0/15 0/15 High Temperature Bake 250°C, 168 hrs 500 hrs 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 >2000V >200 V >2000V > 200 V >2000V >200 V Pass Pass Pass Erase/Write Cycles and Bake Electrostatic Discharge Latch-up 10,000 E/W cycles 100,000 E/W cycles + Bake 250°C, 168 hrs Human body model: 1.5kΩ, 100pF Machine Model: 0 Ω, 200pF Class II - Level A (at 150°C) 62 65 nm process – Monitoring Results TEST PROCEDURE TEST CONDITIONS ELFR 125°C Read NVM cycling HOURS OR CYCLES (Failures/Devices) FAILURES/SAMPLING 168 Hours 0/4733 Room Temperature 1000 cycles 0/731 Temperature Cycle -55°C for 15mn, 125°C for 15mn, air to air 500 cycles 1000 cycles 0/240 0/240 High Temperature Storage 150°C, no bias 504 Hours 1008 Hours 0/240 0/240 Unbiased HAST 130°C, 85% RH 96 Hours 0/240 65 nm Low Power process – Qualification results Die-related test conditions TEST PROCEDURE High Temperature Operating Life Erase/Write Cycles and High Temperature Data Retention Erase/Write Cycles and Low Temperature Data Retention Electrostatic Discharge Latch-up TEST CONDITIONS LOT1 LOT2 LOT3 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/40 0/40 0/40 0/40 0/40 0/40 0/40 0/40 0/40 100,000 E/W cycles + 500 hrs @ 25°C 0/40 0/40 0/40 0/40 0/40 0/40 Human body model: 1.5kΩ, 100pF Machine Model: 0 Ω, 200pF Electrostatic discharge (CDM) Class II - 125°C (Max Oper.Temp.) >2000V >200 V >750V Pass >2000V > 200 V >750V Pass >2000V >200 V >750V Pass TEST CONDITIONS LOT1 LOT2 LOT3 Level 3 per J-STD-020D 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 140°C, 2.2V 168 hrs 500 hrs 1000 hrs 100,000 E/W cycles + Bake 125°C, 10 hrs + Bake 125°C, 100 hrs Package-related test conditions TEST PROCEDURE Pre conditioning High Temperature Bake HAST Thermal Cycling 150°C, 168 hrs 500 hrs 1000 hrs 130C, 85%RH,Vccmax 48 hrs 96 hrs -65°C/150°C 100 cyc 500 cyc 63 i JEDEC publication, JEP122-E, “Failure Mechanisms and Models for Semiconductor Devices” pp2931, Table 1. http://www.jedec.org/download/search/jep122a.pdf ii Microsoft Excel 5.0 statistical functions, Inverse Chi-Squared Distribution, variables are degrees of freedom and Confidence Level. 64