Reliability Qualification Report SGB-6533 - SnPb Plated SGB-6533Z - Matte Sn, RoHS Compliant Products Qualified by Similarity SGB-2233 SGB-2433 SGB-2233Z SGB2433Z SGB-4333 SGB-4533 SGB-6433 SGB-4333Z SGB-4533Z SGB-6433Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Data subject to change. 303 S. Technology Ct, Broomfield CO, 80021 Phone: (800) SMI-MMIC http://www.sirenza.com Document RQR-103405 Rev B 1 SGB-6533/6533Z Reliability Qualification Report I. Qualification Overview The SGB-6533/6533Z family of products has demonstrated reliable operation by passing all qualification testing in our product qualification test plan. The SGB-6533/Z has been subject to stresses such as humidity (autoclave), extreme hot and cold environments (temperature cycling), moisture sensitivity (MSL-1 and solder reflow testing), and has demonstrated reliable performance. II. Introduction Sirenza Microdevices’ SGB-6533/6533Z are high performance SiGe HBT MMIC amplifiers utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6533/6533Z does not require a drop resistor as compared to typical Darlington amplifiers. The SGB-6533/6533Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application. III. Fabrication Technology The SGB-6533/6533Z active bias gain block is manufactured using a Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) technology. The devices are fabricated using silicon germanium technology that delivers high transimpedance, and large dynamic range. This patented self-aligned emitter, double poly HBT process has been in production by our foundry since 1998. The process has been successfully used for a wide range of RFIC products including GSM PAs, DECT front end transceivers, LNAs & VCOs. This process offers comparable performance to GaAs HBTs with the added advantages of mature and high producible Silicon wafer processing. IV. Package Type The SGB-6533/6533Z family of active bias gain block amplifiers are packaged in a plastic encapsulated 3X3 QFN 16 lead package that is assembled using a highly reproducible automated assembly process. The die is mounted using an industry standard thermally and electrically conductive silver epoxy. The exposed paddle provide a low thermal resistance heat conduction path. Figure 1: 3mm X 3mm QFN 16 lead Encapsulated Plastic Package 2 SGB-6533/6533Z Reliability Qualification Report V. Qualification Methodology The Sirenza Microdevices qualification process consists of a series of tests designed to stress various potential failure mechanisms. This testing is performed to ensure that Sirenza Microdevices products are robust against potential failure modes that could arise from the various die and package failure mechanisms stressed. The qualification testing is based on JEDEC test methods common to the semiconductor industry. The manufacturing test specifications are used as the PASS/FAIL criteria for initial and final DC/RF tests. VI. Qualification By Similarity A device can be qualified by similarity to previously qualified products provided that no new potential failure modes/mechanisms are possible in the new design. The following products have been qualified by similarity to SGB-6533/6533Z: SGB-2233 SGB-2233/Z SGB-2433 SGB-2433Z SGB-4333 SGB-4333Z SGB-4533 SGB-4533Z SGB-6433 SGB-6433Z VII. Operational Life Testing Sirenza Microdevices defines operational life testing as a DC biased elevated temperature test performed at the maximum operational junction temperature limit. For the SGB-6533/6533Z the maximum operational temperature limit is 150°C. The purpose of the operational life test is to statistically show that the product operated at its maximum operational ratings will be reliable by operating several devices for a total time of 1000 hours. The results for this test are expressed in device hours that are calculated by multiplying the total number of devices passing the test by the number of hours tested. VIII. Moisture Sensitivity Level - MSL Level 1 Device SGB-6533/6533Z has successfully completed 168 hours of moisture soak (85oC/85%RH), followed by three passes through a convection reflow oven at 270oC (Z versions), or at 235oC (non-Z versions). The successful completion of this test classifies the part as JESD 22-A113B Moisture Sensitivity Level 1 (MSL-1). MSL-1 indicates that no special dry pack requirements or time limits from opening of static bag to reflow exist for the SGB-6533/6533Z. MSL-1 is highest level of moisture resistance that a device can be classified according to the above mentioned standard. 3 SGB-6533/6533Z Reliability Qualification Report IX. Electrostatic Discharge Classification Sirenza Microdevices classifies Human Body Model (HBM) electrostatic discharge (ESD) according to the JESD22-A114 convention. All pin pair combinations were tested. Each pin pair is stressed at one static voltage level using 1 positive and 1 negative pulse polarity to determine the weakest pin pair combination. The weakest pin pair is tested with 3 devices below and above the failure voltage to classify the part. The Pass/Fail status of a part is determined by the manufacturing test specification. The ESD class quoted indicates that the device passed exposure to a certain voltage, but does not pass the next higher level. The following table indicates the JESD ESD sensitivity classification levels. Class Passes Fails 0 1A 1B 1C 2 0V 250 V 500 V 1000 V 2000 V <250 V 500 V 1000 V 2000 V 4000 V Part SGB-6433/Z SGB-6533/Z Class 1B 1B X. Operational Life Test Results The results for SGB-6533/6533Z High Temperature Operating Life Test are as follows: Test Duration Junction Temperature Quantity Device Hours 1000 hours 150°C 80 80,000 Table 1: Summary of High Temperature Operational Life Test Cumulative Device Hours 4 SGB-6533/6533Z Reliability Qualification Report XI. Qualification Test Results Group A0 A1a A1 (1) Test Condition/ Standard Test Name Sample Size Results MSL1 Reflow @ 235oC Peak JESD22-A113C (Non-Z version) 165 Pass MSL1 Reflow @ 270oC Peak JESD22-A113C (Z version) 260 Pass Air to Air, Soldered on PCB -65oC to 150oC 10 min dwell, 1 min transition 1000 cycles JESD22-A104B (Non-Z version) 14 Pass Air to Air, Soldered on PCB -65oC to 150oC 10 min dwell, 1 min transition 1000 cycles JESD22-A104B (Z version) 18 Pass -65°C to +150°C 10 min dwell, 1 min transition 500 cycles JESD22-A104B (Non-Z version) 20 Pass -65°C to +150°C 10 min dwell, 1 min transition 1000 cycles JESD22-A104B (Z version) 20 Pass Preconditioning(1) Temperature Cycling Temperature Cycle Preconditioning for Test Groups A1, A1a, A2, B, C. 5 SGB-6533/6533Z Reliability Qualification Report XI. Qualification Test Results Group A2 B C Test Name High Temperature Operating Life Test Condition/ Standard Sample Size Results Tj = 150°C 1000 hours JESD22-A108B (Non-Z version) 40 Pass Tj = 150°C 1000 hours JESD22-A108B (Z version) 40 Pass Tamb=110°C, 85%RH Biased, 264 hours JESD22-A110B (Non-Z version) 15 Pass Tamb=110°C, 85%RH Biased, 264 hours JESD22-A110B (Z version) 15 Pass Tamb=121°C, 100%RH Un-Biased, 96 hours JESD22-A102C (Non-Z version) 30 Pass Tamb=121°C, 100%RH Un-Biased, 96 hours JESD22-A102C (Z version) 20 Pass HAST Autoclave 6 SGB-6533/6533Z Reliability Qualification Report XI. Qualification Test Results Group D Test Name Power Temperature Cycle Test Condition/ Standard Sample Size Results -40°C to +85°C Cycled bias (5’ on/5’off) 1000 cycles JESD22-A109A (Non-Z version) 20 Pass -40°C to +85°C Cycled bias (5’ on/5’off) 1000 cycles JESD22-A109A (Z version) 10 Pass 20 Pass E High Temperature Storage Tamb=150°C 1000 hours JESD22-A103B (Z version) Tamb=-65°C 1000 hours (Z version) 20 Pass E2 Low Temperature Storage 10 Pass Tin Whisker Tamb=60°C, 90%RH 4700 hours NEMI (Z version) Dip & Look Steam Age Condition C Dip Condition A, 215°C JESD22-B102C (Non-Z version) 15 Pass Dip & Look Steam Age Condition C Dip Condition A, 215°C JESD22-B102C (Z version) 15 Pass F G Solderability 7 XII. Junction Temperature Determination One key issue in performing qualification testing is to accurately determine the junction temperature of the device. Sirenza Microdevices uses a 3um spot size emissivity corrected infrared camera measurement to resolve the surface temperature of the device at the maximum operational power dissipation. The results are displayed below for the device running at operational current of 90mA, a device voltage of 5V, and a base plate of 85°C. Tj = 118.6 °C Figure 2: Infrared Thermal Image of SGB-6533, Vd =5V, Id =90 mA, Tbase plate = 85°C 8