SGB-6533/6533Z Reliability Qualification Report

Reliability Qualification Report
SGB-6533 - SnPb Plated
SGB-6533Z - Matte Sn, RoHS Compliant
Products Qualified by Similarity
SGB-2233 SGB-2433
SGB-2233Z SGB2433Z
SGB-4333 SGB-4533 SGB-6433
SGB-4333Z SGB-4533Z SGB-6433Z
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for
inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall
be entirely at the user’s own risk. Data subject to change.
303 S. Technology Ct, Broomfield CO, 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
Document RQR-103405 Rev B
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SGB-6533/6533Z
Reliability Qualification Report
I. Qualification Overview
The SGB-6533/6533Z family of products has demonstrated reliable operation by passing
all qualification testing in our product qualification test plan. The SGB-6533/Z has been
subject to stresses such as humidity (autoclave), extreme hot and cold environments
(temperature cycling), moisture sensitivity (MSL-1 and solder reflow testing), and has
demonstrated reliable performance.
II. Introduction
Sirenza Microdevices’ SGB-6533/6533Z are high performance SiGe HBT MMIC
amplifiers utilizing a Darlington configuration with an active bias network. The active bias
network provides stable current over temperature and process Beta variations. Designed
to run directly from a 5V supply the SGB-6533/6533Z does not require a drop resistor as
compared to typical Darlington amplifiers. The SGB-6533/6533Z product is designed for
high linearity 5V gain block applications that require small size and minimal external
components. It is on chip matched to 50 ohm and an external bias inductor choke is
required for the application.
III. Fabrication Technology
The SGB-6533/6533Z active bias gain block is manufactured using a Silicon Germanium
(SiGe) Heterojunction Bipolar Transistor (HBT) technology. The devices are fabricated
using silicon germanium technology that delivers high transimpedance, and large
dynamic range. This patented self-aligned emitter, double poly HBT process has been in
production by our foundry since 1998. The process has been successfully used for a
wide range of RFIC products including GSM PAs, DECT front end transceivers, LNAs &
VCOs. This process offers comparable performance to GaAs HBTs with the added
advantages of mature and high producible Silicon wafer processing.
IV. Package Type
The SGB-6533/6533Z family of active bias gain block amplifiers are packaged in a
plastic encapsulated 3X3 QFN 16 lead package that is assembled using a highly
reproducible automated assembly process. The die is mounted using an industry
standard thermally and electrically conductive silver epoxy. The exposed paddle provide
a low thermal resistance heat conduction path.
Figure 1: 3mm X 3mm QFN 16 lead Encapsulated Plastic Package
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SGB-6533/6533Z
Reliability Qualification Report
V. Qualification Methodology
The Sirenza Microdevices qualification process consists of a series of tests designed to
stress various potential failure mechanisms. This testing is performed to ensure that
Sirenza Microdevices products are robust against potential failure modes that could arise
from the various die and package failure mechanisms stressed. The qualification testing
is based on JEDEC test methods common to the semiconductor industry. The
manufacturing test specifications are used as the PASS/FAIL criteria for initial and final
DC/RF tests.
VI. Qualification By Similarity
A device can be qualified by similarity to previously qualified products provided that no
new potential failure modes/mechanisms are possible in the new design. The following
products have been qualified by similarity to SGB-6533/6533Z:
SGB-2233
SGB-2233/Z
SGB-2433
SGB-2433Z
SGB-4333
SGB-4333Z
SGB-4533
SGB-4533Z
SGB-6433
SGB-6433Z
VII. Operational Life Testing
Sirenza Microdevices defines operational life testing as a DC biased elevated
temperature test performed at the maximum operational junction temperature limit. For
the SGB-6533/6533Z the maximum operational temperature limit is 150°C. The purpose
of the operational life test is to statistically show that the product operated at its
maximum operational ratings will be reliable by operating several devices for a total time
of 1000 hours. The results for this test are expressed in device hours that are calculated
by multiplying the total number of devices passing the test by the number of hours
tested.
VIII. Moisture Sensitivity Level - MSL Level 1 Device
SGB-6533/6533Z has successfully completed 168 hours of moisture soak
(85oC/85%RH), followed by three passes through a convection reflow oven at 270oC (Z
versions), or at 235oC (non-Z versions). The successful completion of this test classifies
the part as JESD 22-A113B Moisture Sensitivity Level 1 (MSL-1). MSL-1 indicates that
no special dry pack requirements or time limits from opening of static bag to reflow exist
for the SGB-6533/6533Z. MSL-1 is highest level of moisture resistance that a device can
be classified according to the above mentioned standard.
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SGB-6533/6533Z
Reliability Qualification Report
IX. Electrostatic Discharge Classification
Sirenza Microdevices classifies Human Body Model (HBM) electrostatic discharge (ESD)
according to the JESD22-A114 convention. All pin pair combinations were tested. Each
pin pair is stressed at one static voltage level using 1 positive and 1 negative pulse
polarity to determine the weakest pin pair combination. The weakest pin pair is tested
with 3 devices below and above the failure voltage to classify the part. The Pass/Fail
status of a part is determined by the manufacturing test specification. The ESD class
quoted indicates that the device passed exposure to a certain voltage, but does not pass
the next higher level. The following table indicates the JESD ESD sensitivity
classification levels.
Class
Passes
Fails
0
1A
1B
1C
2
0V
250 V
500 V
1000 V
2000 V
<250 V
500 V
1000 V
2000 V
4000 V
Part
SGB-6433/Z
SGB-6533/Z
Class
1B
1B
X. Operational Life Test Results
The results for SGB-6533/6533Z High Temperature Operating Life Test are as follows:
Test Duration
Junction
Temperature
Quantity
Device Hours
1000 hours
150°C
80
80,000
Table 1: Summary of High Temperature Operational Life Test Cumulative Device Hours
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Reliability Qualification Report
XI. Qualification Test Results
Group
A0
A1a
A1
(1)
Test Condition/
Standard
Test Name
Sample Size
Results
MSL1
Reflow @ 235oC Peak
JESD22-A113C
(Non-Z version)
165
Pass
MSL1
Reflow @ 270oC Peak
JESD22-A113C
(Z version)
260
Pass
Air to Air, Soldered on PCB
-65oC to 150oC
10 min dwell, 1 min transition
1000 cycles
JESD22-A104B
(Non-Z version)
14
Pass
Air to Air, Soldered on PCB
-65oC to 150oC
10 min dwell, 1 min transition
1000 cycles
JESD22-A104B
(Z version)
18
Pass
-65°C to +150°C
10 min dwell, 1 min transition
500 cycles
JESD22-A104B
(Non-Z version)
20
Pass
-65°C to +150°C
10 min dwell, 1 min transition
1000 cycles
JESD22-A104B
(Z version)
20
Pass
Preconditioning(1)
Temperature Cycling
Temperature Cycle
Preconditioning for Test Groups A1, A1a, A2, B, C.
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Reliability Qualification Report
XI. Qualification Test Results
Group
A2
B
C
Test Name
High Temperature
Operating Life
Test Condition/
Standard
Sample Size
Results
Tj = 150°C
1000 hours
JESD22-A108B
(Non-Z version)
40
Pass
Tj = 150°C
1000 hours
JESD22-A108B
(Z version)
40
Pass
Tamb=110°C, 85%RH
Biased, 264 hours
JESD22-A110B
(Non-Z version)
15
Pass
Tamb=110°C, 85%RH
Biased, 264 hours
JESD22-A110B
(Z version)
15
Pass
Tamb=121°C, 100%RH
Un-Biased, 96 hours
JESD22-A102C
(Non-Z version)
30
Pass
Tamb=121°C, 100%RH
Un-Biased, 96 hours
JESD22-A102C
(Z version)
20
Pass
HAST
Autoclave
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SGB-6533/6533Z
Reliability Qualification Report
XI. Qualification Test Results
Group
D
Test Name
Power Temperature
Cycle
Test Condition/
Standard
Sample Size
Results
-40°C to +85°C
Cycled bias (5’ on/5’off)
1000 cycles
JESD22-A109A
(Non-Z version)
20
Pass
-40°C to +85°C
Cycled bias (5’ on/5’off)
1000 cycles
JESD22-A109A
(Z version)
10
Pass
20
Pass
E
High Temperature
Storage
Tamb=150°C
1000 hours
JESD22-A103B
(Z version)
Tamb=-65°C
1000 hours
(Z version)
20
Pass
E2
Low Temperature
Storage
10
Pass
Tin Whisker
Tamb=60°C, 90%RH
4700 hours
NEMI
(Z version)
Dip & Look
Steam Age Condition C
Dip Condition A, 215°C
JESD22-B102C
(Non-Z version)
15
Pass
Dip & Look
Steam Age Condition C
Dip Condition A, 215°C
JESD22-B102C
(Z version)
15
Pass
F
G
Solderability
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XII. Junction Temperature Determination
One key issue in performing qualification testing is to accurately determine the junction
temperature of the device. Sirenza Microdevices uses a 3um spot size emissivity
corrected infrared camera measurement to resolve the surface temperature of the device
at the maximum operational power dissipation. The results are displayed below for the
device running at operational current of 90mA, a device voltage of 5V, and a base plate
of 85°C.
Tj = 118.6 °C
Figure 2: Infrared Thermal Image of SGB-6533, Vd =5V, Id =90 mA, Tbase plate = 85°C
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