SFT390604A2 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Dual Microminiature Package 800 mA 75 Volts NPN/PNP Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT390604A2 __ __ │ └ Screening 2/ __ = Commercial │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Package GW = Gullwing Features: • • • • • High Speed Switching Transistor Multiple Devices Reduce Board Space High Power Dissipation: Up to 600 mW / device TX, TXV, S-Level screening available Replaces both 2N3906AU (PNP) & 2N3904AU(NPN) in one package Symbol PNP Value NPN Value Units Collector – Emitter Voltage VCEO 40 40 Volts Collector – Base Voltage VCBO 40 60 Volts Emitter – Base Voltage VCBO 6 6 Volts Continues Collector Current IC 200 200 mAmps Power Dissipation @ TC = 25ºC PD 600 600 mW Top & Tstg -65 to +200 -65 to +200 ºC RθJC 0.29 0.29 ºC/mW Maximum Ratings (per device) Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) Gullwing (GW) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0036 B Doc SFT390604A2 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Symbol PNP Limit NPN Limit Units IC = 1 mA BVCEO 40 min 40 min V Collector – Base Breakdown Voltage IC = 10 µA BVCBO 40 min 60 min V Emitter – Base Breakdown Voltage IC = 10 µA BVEBO 5 min 5 min V Electrical Characteristic 4/ 5/ Collector – Emitter Sustaining Voltage Collector Cutoff Current Vce = 30 V, Vbe = 3.0 V ICEX 50 max 50 max nA Collector Cutoff Current Vcb = -30 V ICBO 50 max 50 max nA Emitter Cutoff Current Veb = -3.0 V IEBO 50 max 50 max nA HFE 60 min 80 min 100 - 300 60 min 30 min 40 min 70 min 100 - 300 60 min 30 min DC Forward Current Transfer Ratio * Collector – Emitter Saturation Voltage * Base – Emitter Saturation Voltage * VCE = 1.0V, IC = 0.1 mA VCE = 1.0V, IC = 1.0 mA VCE = 1.0V, IC = 10 mA VCE = 1.0V, IC = 50 mA VCE = 1.0V, IC = 100 mA IC = 10mA, IB = 1.0mA VCE(Sat) IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA VBE(Sat) IC = 50mA, IB = 5.0mA 0.25 max 0.20 max 0.40 max 0.30 max 0.65 to 0.85 0.65 to 0.85 0.95 max 0.95 max V V VCE = 20V, IC = 20mA fT 250 min 300 min MHz Output Capacitance VCE = 10V, f = 1MHz cob 4.5 max 4.0 max pF Input Capacitance VCE = 0.5V, f = 1MHz cib 10 max 8.0 max pF Vcc=3V, IC = 10 mA IB1 = 1mA, IB2=-1mA Vbe(off) = 0.5 V td tr ts tf 35 max 35 max 225 max 75 max 35 max 35 max 200 max 50 max nsec VCE = 10V, IC = 1.0 mA hfe 100 - 400 100 - 400 Ic = 100 uA, Vce = 5 V, Rs = 1.0 kΩ, f = 1 khz NF 4.0 max 5.0 max Frequency Transition Turn-on Delay Time Rise Time Switch Times Storage Time Fall Time Small Signal Current Gain (f = 1 khz ) Noise Figure NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. Available Part Numbers: SFT390604A2GW 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 5/ Negative bias conditions for the PNP device type Package Pin 1 PIN ASSIGNMENT Pin 2 Pin 3 Pin 4 PNP Device GW db Collector Base Pin 5 Pin 6 NPN Device Emitter Collector Base Emitter