SFT5001 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 5 AMPS 125 Volts High Speed PNP Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT5001 __ __ __ __ │ │ │ └ Screening 2/ __ = Not Screened │ │ │ TX = TX Level │ │ │ TXV = TXV Level │ │ │ S = S Level │ │ │ │ │ └ Lead Bend 3/ 4/ __ = Straight Leads │ │ UB = Up Bend │ │ DB = Down Bend │ └ Pin Out Configuration 5/ __ = Normal │ R = Optional │ └ Package 3/ /59 = TO-59 /66 = TO-66 J = TO-257 S.5 = SMD .5 • • • • • • • Features: Radiation Tolerant Superior to JEDEC 2N5001 Series High Frequency, f T > 80MHz Very Low Saturation Fast Switching, 130 ns Max t(on) Designed for Complementary Use with SFT3997 TX, TXV, S-Level Screening Available. Consult Factory. Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 80 Volts Collector – Base Voltage VCBO 125 Volts Emitter – Base Voltage VEBO 7 Volts Collector Current IC 5 Amps Base Current IB 1 Amps Total Power Dissipation @ TC = 100ºC Derate Above 100ºC PD 30 0.3 Watts W/ºC TJ & TSTG -65 to +200 ºC R0JC 3.33 ºC/W Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-59 (/59) TO-66 (/66) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TO-257 (J) SMD .5 (S.5) DATA SHEET #: TR0099A DOC SFT5001 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics Symbol Min Max Units Collector – Emitter Blocking Voltage * (IC = 10 mA) BVCEO 80 –– Volts Collector – Base Blocking Voltage (IC = 20 µA) BVCBO 125 –– Volts Emitter – Base Blocking Voltage (IE = 20 µA) BVEBO 7 –– Volts Collector Cutoff Current (VCE = 40 V) ICEO –– 10 μA Collector Cutoff Current (VCB = 100 V) ICBO –– 1.0 μA (VEB = 6 V) IEBO –– 1.0 μA 50 50 30 –– –– –– –– –– 0.5 1.0 VB E (SAT) –– –– 0.9 1.2 Volts Emitter Cutoff Current DC Current Gain * (IC = 50 mA, VCE = 5 V) (IC = 1.0 A, VCE = 5 V) (IC = 5.0 A, VCE = 5 V) (IC = 1.0 A, IB = 100 mA) (IC = 5.0 A, IB = 500 mA) Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * (IC = 1.0 A, IB = 100 mA) (IC = 5.0 A, IB = 500 mA) hFE VCE (SAT) Volts Current Gain – Bandwidth Product VCE = 5 V, IC = 0.5 A, f = 10 MHz fT 80 –– MHz Output Capacitance VCB = 10 V, IE = 0 A, f = 1.0 MHz Cob –– 75 pF Delay Time Rise Time Storage Time (VCC = 20 V, IC = 1.0 A, VBE (off) = 3.7 V, IB1 = IB2 = 100 mA, RL = 20 Ω) Fall Time NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. t(on) td tr –– –– 150 ns t(off) ts tf –– –– 500 ns 4/ Up and Down Bend Configurations are Available for ‘J’ (TO257) Packages Only. 5/ Optional Pin Out Configurations are Available for ‘J’ (TO257) Packages Only. 6/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Available Part Numbers: SFT5001/59 SFT5001/66 SFT5001J SFT5001JUB SFT5001JDB SFT5001JR SFT5001JRUB SFT5001JRDB SFT5001S.5 PIN ASSIGNMENT (Standard) Package Collector Emitter TO-59 (/59) Pin 1 Pin 2 TO-66 (/66) Case Pin 2 TO-257 (J) Pin 1 Pin 2 SMD .5 (S.5) Pin 1 Pin 2 Base Pin 3 Pin 3 Pin 3 Pin 3 PIN ASSIGNMENT (Optional) Package Collector Emitter TO-257 (JR) Pin 2 Pin 3 Base Pin 1